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    Optical Amplifiers

    Chapter 10

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    Optical Amplifiers: amplifies in optical domain without O-E or E-O.E.g. SOA, EDFA, Raman Amplifier

    Regenerators regenerate by converting O-E, re-time, re-shape

    and E-O conversion.

    As signal propagates through fiber channel, it gets attenuated due

    to absorption, scattering, etc. and gets broadened due to dispersion.

    Optical Amplifiers

    Advantages of Optical Amplifiers:1. Insensitive to data rate

    2. Large gain bandwidths

    Disadvantages:

    1. Do not regenerate,2. amplifies noise,3. no dispersion compensation

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    Semiconductor Optical Amplifiers (SOA)

    Semiconductor optical amplifiers are similar in constructionto semiconductor lasers.

    The main difference is that SOAs aremade with layers of antireflection coatings

    to prevent light from reflecting back intothe circuit.

    semiconductor material such as indium phosphide.

    Optical gain occurs as excited electrons in the semiconductormaterial are stimulated by incoming light signals; when current is

    applied across the p-n junction the process causes the photons to

    replicate, producing signal gain.

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    SOA operation

    The DC current applied to the device results in electrons being pumped intothe (normally empty) conduction band and removed from the (normally full)valence band. This creates the population inversion which is a pre-cursor tooptical gain. When signal photons travel through the device they cause

    stimulated emission to occur when an electron and hole recombine.

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    By adjusting the chemical composition of III-V semiconductors (typicallyGaInAsP) the band gap can be adjusted to give optical gain in the

    telecommunications windows of interest.

    The devices are typically 250mm long although devices of up to1mm have been made. In general the longer devices canachieve higher gain and wider bandwidths.

    be as large as 100 nm and the fact that the energy source is a DC

    electrical current makes these devices look promising as opticalamplifiers.

    A major advantage of SOAs is that they can be integrated with othercomponents on a single planar substrate. For example, a WDMtransmitter device may be constructed including perhaps 10 lasersand a coupler all on the same substrate. In this case an SOA could beintegrated into the output to overcome some of the coupling losses.

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    SOA: Semiconductor Optical Amplifier

    The configuration of a SOA uses the familiar Double-Hetero (DH) Structure.Requirements are different than ILD.

    1. Band-gap of active layer < surrounding layers2. RI of active layer > surrounding layers3. Efficient coupling of signal photons4. Optical feedback to be suppressed (AR coatings)

    Optical Gain

    The optical power P propagating through amplifiers is described as

    PgPdzdP

    eff=

    where, g is gain coefficient and eff is effective loss coefficient.

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    ( )trg NNg =

    If1. N is carrier concentration per unit volume,

    2. Ntr is carrier conc. at transparency (when gain is unity),3. g is the gain cross-section (differential gain coefficient dg/dN)4. is the confinement factor,the gain coefficient is written as,

    The carrier population rate change with injection current I and signal power P.

    Ah

    gPN

    eV

    I

    dt

    dN

    c =

    Ah

    gP

    eV

    IN cc

    =

    Total number of carriersper unit volume Carrier loss per unit volumedue to non-radiative processesc- carrier life time

    Carrier loss due to

    stimulated emission

    Under-steady state, dN/dt = 0,

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    +

    =

    cg

    trcg

    Ah

    P

    Nev

    I

    g

    1

    Hence, The Gain Coefficient,

    If P is so small that may be neglected,cg

    sat

    AhP

    =&,

    = trc

    g NevIg 0

    +

    =

    satP

    Pgg

    1

    0

    Then,

    &,

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    PP

    P

    P

    g

    dz

    dPeff

    sat

    +

    =

    1

    0

    ==

    +

    L

    z

    P

    Pdzg

    P

    P

    dPout

    in 0

    0

    1

    Substituting value of g,

    Neglecting eff, & integrating,

    satP

    =

    =+L

    z

    P

    Psat

    P

    P

    dzgdPPP

    dP out

    in

    out

    in 0

    0

    1

    [ ] [ ] LgPPP

    PP inoutsat

    inout 0

    1lnln =+

    =

    sat

    inout

    in

    out

    P

    PPLg

    P

    P0ln

    or,

    or,

    or,

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    == sat

    inout

    P

    PPLg

    in

    out eP

    PG

    0

    inout PP >> Lg

    eG 00=&,

    sat

    out

    PPGG =

    0lnln

    Thus, The amplifier Gain, G is

    If,

    Then a good approximation is,

    -

    ( )

    sat

    dBsat

    P

    PG

    G = 30

    0 ln2

    ln

    ( )cg

    satdBsatAhPP

    == )2ln()2ln(3

    ,

    or,

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    Travelling Wave

    Semiconductor Laser

    Amplifier (SLA)

    Angled-facet ortilted-stripe the

    reflected beam atthe facet isphysicallyseparated from theforward beam

    Mirror

    Effect of optical reflections

    Fabry-Perot

    Semiconductor

    Laser Amplifier

    (SLA)

    -

    window facet theoptical beamspreads in thetransparentwindow

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    ( )( )

    ( ) )(sin4111

    2

    21

    2

    21

    21

    RRGRRG

    GRR

    P

    PG

    ss

    s

    in

    out

    +

    ==

    Ln )(20

    =

    where, G is measured gain, Gs is single pass gain,& phase shift the wave goes on traversing length L.

    Effect of optical reflections

    ==

    2/1

    21

    211

    0

    )4(

    1sin

    2

    )(2

    RRG

    RRG

    nL

    c

    s

    s

    2

    21

    21

    1

    1

    +=

    RRG

    RRGG

    s

    s

    where, n is RI of Active region material, is incident signal frequency,0 is frequency of resonant mode.

    3 dB spectral Bandwidth,

    Peak trough ratio of passband ripple,

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    Limitations of SOA:

    The carrier lifetime is of order of 0.1 ns, hence gain recovery timeis short w.r.t to GHz data rate

    Therefore, different levels of signal intensity will experience different gains,

    leading to signal distortion.

    This becomes significant when SOA is operating near saturation.This sets an upper limit on maximum amplifier output power.

    Semiconductor Layers are sensitive to polarization.

    Non-linearities leads to inter-channel cross talk.

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    What is EDFA

    An optical fiber heavily doped with Er3+ at core that serves asan optical amplifier.

    EDFA Stands for Erbium Doped Fiber Amplifier Used to boost the intensity of optical signals being carried

    through a fiber optic communications system

    Works on the concept of stimulated emission Operates near 1550 nm

    Other Rare-earth elements:1. Holmium (Ho),

    2. Neodymium (Nd)3. Samarium (Sm)4. Ytterbium (Yb)

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    Why Erbium?

    Erbium has several important properties that make it anexcellent choice for an optical amplifier

    Erbium ions (Er3+) have quantum levels that allows them to bestimulated to emit in the 1540nm band, which is the band that

    has the least power loss in most silica-based fiber.

    r um s quan um eve s a so a ow o e exc e y a s gna

    at either 980nm or 1480nm, both of which silica-based fiber

    can carry without great losses

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    Basic block diagram of EDFA

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    EDFA Configuration

    Co-propogating (Forward) Pump EDFA

    Counterpropogating (Backward) Pump EDFA

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    EDFA Configuration

    Forward pump= lower noise but lower output power

    Backward pump = higher output power but higher noise

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    Amplification between 1.53 and 1.56 um.

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    Advantages Insensitivity to light polarization state High gain

    Low noise figure: 4.5 dB to 6dB No distortion at high bit rates Simultaneous amplification of wavelength division multiplexed

    Immunity to cross talk among wavelength multiplexedchannels Do not require high speed electronics

    Independent of bit rate (Bit rate transparency)

    Commercially available in C-band & L-band.

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    Drawbacks Pump laser necessary Need to use a gain equalizer for multistage amplification

    Difficult to integrate with other components Dropping channels can give rise to errors in surviving channels

    EDFA: Mature technology1. New materials (Fluoride, Tellurite)

    2. New dopant (Pr, Tm) ~PDFA, TDFA to exhibit

    broader and flatter gain

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    Band Name Wavelengths Description

    O-band 1260 1360 nm Original band, PON upstream

    E-band 1360 1460 nm Water peak band

    S-band 1460 1530 nm PON downstream

    C-band 1530 1565 nm

    Lowest attenuation, original DWDMband, compatible with fiber amplifiers,CATV

    L-band 1565 1625 nmLow attenuation, expanded DWDMband

    U-band 1625 1675 nm Ultra-long wavelength

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    1660 nm1640162016001580156015401520150014601440 1480

    Fluoride EDFA 62 nm

    EDFA 52 nm

    EDFA ~47 nm

    Tellurite EDFA 76 nm]

    TDFA 37 nm

    Rare earth-Doped Fiber Amplifiers

    Erbium-Doped Fiber Amplifiers (EDFA) : C, L-BandThulium-Doped Fiber Amplifiers (TDFA) : S-BandPraseodymium-Doped Fiber Amplifiers (PDFA) : O-Band

    1660 nm1640162016001580156015401520150014601440 1480

    TDFA 35 nm

    Raman + Fluoride EDFA 80 nm

    Dist. Raman + Fluoride EDFA 83 nm

    Raman + TDFA 53 nm

    Raman 18 nm

    Raman 40 nm

    Raman 100 nm

    Raman 132 nm

    C-Band L-BandS-Band U-BandE-Band

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    Traditional Optical

    Communication SystemLoss compensation: Repeaters at every 20-50 km

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    Optically Amplified SystemsEDFA = Erbium Doped Fibre Amplifier

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    Typical Packaged EDFA

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    Erbium

    Pump laserWDM Fibre coupler

    Interior of an Erbium Doped Fibre Amplfier (EDFA)

    Fibreinput/output

    doped fibre

    loop

    Source: Master 7_5

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    Erbium doped aluminiumoxide spiral waveguide

    1 mm square waveguide

    Pum ed at 1480 nm

    Miniature Optical Fibre Amp

    Low pump power of 10 mW

    Gain only 2.3 dB at present

    20 dB gain possibleFOM Institute Amsterdam and

    University of Holland at Delft

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    Raman

    Source: Master 7_5

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    Raman Fibre Amplifiers (RFAs) rely on an intrinsic non-

    linearity in silica fibre

    Variable wavelength amplification:

    Raman Amplifiers

    For example pumping at 1500 nm produces gain at about 1560-1570nm

    RFAs can be used as a standalone amplifier or as a

    distributed amplifier in conjunction with an EDFA

    Source: Master 7_5

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    Raman Effect AmplifiersStimulatedStimulated RamanRaman ScatteringScattering (SRS)(SRS) causes a new signal (a Stokeswave) to be generated in the same direction as the pump wave down-

    shifted in frequency by 13.2 THz (due to molecular vibrations) providedthat the pump signal is of sufficient strength.In addition SRS causes the amplification of a signal if it's lower in

    .

    difference in wavelengths is around 13.2 THz.The signal to be amplified must be lower in frequency (longer inwavelength) than the pump.It is easy to build a Raman amplifier, but there is a big problem:we just can't build very high power (around half a watt or more) pumplasers at any wavelength we desire! Laser wavelengths are veryspecific and high power lasers are quite hard to build.

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    Distributed Raman Amplification (I)

    Raman pumping takes place backwards over the fibre

    Gain is a maximum close to the receiver and decreases in the

    transmitter direction

    Long Fibre Span

    Source: Master 7_5

    TransmitterOptical

    ReceiverEDFA

    RamanPumpLaser

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    With only an EDFA at the transmit end the optical power level decreases

    over the fibre length

    With an EDFA and Raman the minimum optical power level occurs towardthe middle, not the end, of the fibre.

    Distributed Raman Amplification (II)

    Source: Master 7_5

    Distance

    OpticalPower

    +

    Raman

    EDFA

    only

    Animation

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    Raman amplification can provides very broadbandamplification

    Multiple high-power "pump" lasers are used to producevery high gain over a range of wavelengths.

    Broadband Amplification using Raman

    Amplifiers

    93 nm bandwidth has been demonstrated with just twopumps sources

    400 nm bandwidth possible?

    Source: Master 7_5

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    Advantages

    Variable wavelength amplification possible

    Compatible with installed SM fibre

    Can be used to "extend" EDFAs

    Advantages and Disadvantages of Raman

    Amplification

    an resu t n a ower average power over a span, goo or ower crossta

    Very broadband operation may be possible

    Disadvantages

    High pump power requirements, high pump power lasers have only recently

    arrived

    Sophisticated gain control needed

    Noise is also an issue

    Source: Master 7_5

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    The Need of Optical Amplification

    Erbium-Doped Fiber Amplifiers (EDFAs) application in long haul. Todays

    amplifier of choice. Erbium-Doped Waveguide Amplifiers (EDWAs) application in metro andaccess networks

    Raman Amplifiers application in DWDM

    Why? Extend distance light signal can travelwithout regeneration

    Semiconductor Optical Amplifiers (SOA) not fiber based type, application inmetro and access networks

    Standard FiberAmplifier

    Pump Lasers

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    General Application of OpticalAmplification

    In-line amplifierPreamplifier

    LAN booster amplifier

    Standard FiberAmplifier

    Pump Lasers

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    In-lineAmplifier

    Fibre Link

    Transmitter

    Optical Amplifiers

    Fibre Link

    OpticalReceiver

    Optical Amplifier Applications

    Amplifier

    Preamplifier

    Transmitter

    Transmitter

    Optical Amplifier

    Optical Amplifier

    Fibre Link

    Optical

    Receiver

    OpticalReceiver

    Source: Master 7_5

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    60 mW

    30

    35

    40 Boosteramplifier

    preamplifier

    Amplifier OperationPoints

    30 mW

    10

    15

    20

    -10 -5 0 5 10 15

    Output power[dBm]

    n- ne

    amplifier