HIGH-GAIN

SEMICONDUCTOR OPTICAL AMPLIFIERS

By:

Hojjatollah Sarvari

Department of Electrical Engineering

Shiraz University, Shiraz-Iran

October-2008

INTRODUCTION

SEMICONDUCTOR OPTICAL AMPLIFIER

Fabry-Perot Amplifier Traveling wave amplifier

To make a traveling wave Semiconductor

Optical Amplifier,reflectivity must be

reduced.

Three approaches are commonly used:

Anti-reflection coating

Tilted Active Region

Use of transparent window regions

INTRODUCTION

Structures for reduce facet’s refelectivity

1.55 µm Polarisation Independent Semiconductor

Optical Amplifier with 25 dB Fiber to Fiber GainP. Doussiere, P. Garabedian, C. Graver, D. Bonnevie, T. Fillion, E. Derouin,

M. Monnot, J. G. Provost, D. Leclerc, Associate, IEEE, and M. KlenkIEEE PHOTONICS TECHNOLOGY LETTERS. VOL. 6, NO. 2, FEBRUARY 1994

Low noise figure (7.2dB) and high gain (29dB) semiconductor

optical amplifier with a single layer AR coatingA.E.Kelly,L.F.lealman,L.J.Rivers,S.D.Perrin,And M.Silver

ELECTRONiCS LETTERS 13th March 1997 Vol. 33 No. 6

Low noise figure (7.2dB) and high gain (29dB) semiconductor

optical amplifier with a single layer AR coatingA.E.Kelly,L.F.lealman,L.J.Rivers,S.D.Perrin,And M.Silver

ELECTRONiCS LETTERS 13th March 1997 Vol. 33 No. 6

Angled-Facet S-Bend Semiconductor Optical

Amplifiers for High-Gain & Large-Extinction RatioShotaro Kitamura, Hiroshi Hatakeyama, Takemasa Tamanuki,

Tatsuya Sasaki, Keiro Komatsu, and Masayuki Yamaguchi

IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 11, NO. 7, JULY 1999

Improved Characterization of Multilayer Antireflection Coatings

for Broad-Band Semiconductor Optical AmplifiersJungkeun Lee and Takeshi Kamiya, Member, IEEE

JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 18, NO. 12, DECEMBER 2000

High-Gain Semiconductor Optical Amplifier With

12.4-dBm Saturation Output Power at 1550 nmK. Dreyer, C. H. Joyner, J. L. Pleumeekers, C. A. Burrus, Life Fellow, IEEE, A. Dentai, Fellow, IEEE,

B. I. Miller, Member, IEEE, S. Shunk, P. Sciortino, S. Chandrasekhar, Fellow, IEEE, L. Buhl, F. Storz, and M. Farwell

JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 20, NO. 4, APRIL 2002

High-Gain Semiconductor Optical Amplifier With

12.4-dBm Saturation Output Power at 1550 nmK. Dreyer, C. H. Joyner, J. L. Pleumeekers, C. A. Burrus, Life Fellow, IEEE, A. Dentai, Fellow, IEEE,

B. I. Miller, Member, IEEE, S. Shunk, P. Sciortino, S. Chandrasekhar, Fellow, IEEE, L. Buhl, F. Storz, and M. Farwell

JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 20, NO. 4, APRIL 2002

Quantum-Dot Semiconductor Optical AmplifiersBy Tomoyuki Akiyama, Member IEEE, Mitsuru Sugawara, and

Yasuhiko Arakawa, Fellow IEEE

Proceedings of the IEEE | Vol. 95, No. 9, September 2007

Quantum-Dot Semiconductor Optical AmplifiersBy Tomoyuki Akiyama, Member IEEE, Mitsuru Sugawara, and

Yasuhiko Arakawa, Fellow IEEE

Proceedings of the IEEE | Vol. 95, No. 9, September 2007

Comparison with other SOA-based

regenerators and Comparison of Bandwidths