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  • 1 Copyright 2010 Lockheed Martin Corporation, All Rights Reserved

    Lockheed Martin Nanosystems

    National Nanotechnology Initiative at Ten: Nanotechnology Innovation Summit

    December 2010Dr. Brent M. SegalDirector & Chief Technologist, LM Nanosystemsbrent.m.segal@lmco.com / (339) 927-0682

    Copyright 2010 Lockheed Martin Corporation, All Rights Reserved

  • 2 Copyright 2010 Lockheed Martin Corporation, All Rights ReservedCopyright 2010 Lockheed Martin Corporation, All Rights Reserved

    Lockheed Martin Nanosystems

    12,000 sq. ft. R&D facility in Billerica, MA

    Class 10K, Class 1K, and Class 100 cleanrooms

    Dedicated labs for Thin film deposition & etch Photolithography Electrical test / Metrology SEM / Optics Organic / Inorganic chemistry

    4,000 sq. ft. R&D and prototyping center in Springfield, MO (at Missouri State Univ.)Focus on advanced CNT coating methods, rapid prototyping, and process optimizationState-of-the-art IC/wafer test systems (DC to 40GHz)

    50,000 sq. ft. production IC foundry in Manassas, VA (ITAR/Secret Certified Trusted Foundry)Co-located with Lockheed Martin MS2 facilityFirst carbon nanotubetechnology integrated into CMOS production fabline; first shift tool operators

  • 3 Copyright 2010 Lockheed Martin Corporation, All Rights ReservedCopyright 2010 Lockheed Martin Corporation, All Rights Reserved

    NRAM Technology Chronology

    2001 First Patterned CNT Fabric

    2002 First NRAM Switch

    2003 First CMOS Compatible CNT Solution

    2004 First CMOS Integration

    2005 First 22nm NRAM Switch

    2006 First CNT Integrated Circuit

    2007 Begin 4Mb RH CMOS Integration

    2008 4Mb NRAM Fabricated

    2009 Packaged 4Mb NRAM part; Flown on shuttle mission

    2010 >99% Raw Bit Yield

    2011 4Mb Product & 64Mb NRAM Design

    2012 64Mb TCV

  • 4 Copyright 2010 Lockheed Martin Corporation, All Rights ReservedCopyright 2010 Lockheed Martin Corporation, All Rights Reserved

    Fabrication with Carbon Nanotube solutions

    Dispense & Disperse Solution

    Remove Edge-bead

    Evaporate Solvent

    Raw Nanotubes Aqueous Nanotube Solution

    Purified Nanotubes

  • 5 Copyright 2010 Lockheed Martin Corporation, All Rights Reserved

    CMOS-compatible CNT fabric coatingsQualified manufacturing processUses spin-coat application of CNTs in

    water on CMOS wafersCircumvents high temperature CNT

    growth process Produces no excess metallic contaminants

    on wafersNo cross contamination of downstream

    fabrication toolsRequires only existing CMOS tools and

    techniques (standard CMOS infrastructure)

    Now available at multiple production CMOS fab linesAll are based in U.S. Includes trusted facilities

    1 m

    100 m

    10 m

  • 6 Copyright 2010 Lockheed Martin Corporation, All Rights Reserved

    NRAM Non-volatile CNT Memory Flight

    NRAM evaluation board flown on STS-125Launched 11 May 2009 (13-

    day Hubble repair mission)100+ chips exposed to space

    conditions for mission duration1st gen (28 K-bit) packaged

    NRAM parts mounted with Actel 54SX72 test controller

    Preparations for next flight2nd gen (4 M-bit) NRAM part

    uses the same 44-pin package and board layout

    New flight board will continually exercise over 200 M-bits of rad-hard non-volatile memory in space conditions

  • 7 Copyright 2010 Lockheed Martin Corporation, All Rights Reserved

    4 M-bit radiation-hard NRAM development

    Unique architectureUsable as stand alone or

    embedded (cache) memoryPerformance characteristics for spaceLow power; no standby current;

    reduced heat generationNon-volatile; long lifetimeScalable to high densities

    Compatible with existing rad-hard CMOSRadiation / EMP HardenedNext iteration part at 64 M-bitFuture part at 2 G-bit

  • 8 Copyright 2010 Lockheed Martin Corporation, All Rights Reserved

    LM Nanosystems Core Competencies

    Carbon Nanotube (CNT) Solutions and Chemistry Carbon nanotube purification, functionalization, and treatment

    Production of CMOS-grade CNT solutions for use in nanoelectronics fabrication

    Wide variety of laboratory chemical and physical analysis techniques

    Application / coating of CNT fabrics on dielectrics, plastics, metals, etc.

    CNT Electronics R&D (Design, Fabrication, Test, and Analysis) Device/Circuit design using industry standard IC design tools (e.g. Cadence)

    Engineering fabrication team with expertise in Si wafer thin film electronics processing as well CNT device fabrication on substrates such Kapton, Mylar, glass, etc.

    Proven record of successfully installing new CNT fabrication process flows in production CMOS foundries

    Electrical Test & Characterization Device/Circuit measurement using automated DC and RF characterization equipment

    Semi-automatic test of integrated CNT/CMOS packaged parts as well as on-wafer die

    Evaluation of device photoresponse for sensors and energy harvesting

  • 9 Copyright 2010 Lockheed Martin Corporation, All Rights Reserved

    Future Needs for Nanotechnology

    Continued support for NanomanufacturingEncourage partnerships

    Encourage NEW types of metrology

    Nanotechnology Standards [ISO TC 229/IEC TC 113/IEEE] Standards are a catalyst for progress

    Global competition is intense.

    Standards are significant enablers for commercial success at all stages of innovation - from R&D to recycling/disposal

    Successful innovation in nanotechnologies requires standards based on the best of each nations science and engineering

    Documents for standards on consensus specifications advance the field

    Standards influence R&D and business models.

    Standards enable innovative products and new markets.

    Patrick Gallagher, NIST Director, November 2009

  • 10 Copyright 2010 Lockheed Martin Corporation, All Rights Reserved

    Lockheed Martin NanosystemsNational Nanotechnology Initiative at Ten: Nanotechnology Innovation SummitDecember 2010Lockheed Martin NanosystemsNRAM Technology ChronologyFabrication with Carbon Nanotube solutionsCMOS-compatible CNT fabric coatingsNRAM Non-volatile CNT Memory Flight4 M-bit radiation-hard NRAM developmentLM Nanosystems Core CompetenciesFuture Needs for NanotechnologySlide Number 10

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