euv resist evaluation excite t406 and more moore, sp3 wp6,

112&13/05/2005 Review Meeting More Moore_SP3-WP CONSORTIUM CONFIDENTIAL

EUV Resist EvaluationExCite T406 and

More Moore, SP3 WP6,

Objective: Evaluation of resist for EUV Lithography at 45nm, 32nm, 22nm node

AZ Electronic MaterialsAthens

12.Mai 2005


Concepts and resultsSingle layer resists (SLR) formulations will be investigated by AZ-EM. No double layer resist technique will be evaluated.

The chemical amplification concept was selectedCAR’s are preferred resists for EUV lithography because they have a high sensitivity, high resolution, high contrast and good etch resistance.The chemical amplification concept will be further tested and optimized till to the limits of resolution, LER and outgassing.

Of cause, if new chemical concepts arise with the theoretical power of superior resolution, higher sensitivity and less LER, they are always appreciated and can lead to a change in the chemical concept.


Resist-Polymer Dose-to-clear D0

[mJ/cm2 ]

Contrast

UFTL

[nm]

Dneg

[mJ/cm2]

PHOST type B 0,46 4,73 0 100

Modified PHOST type B 0,87 2,95 0 100

ACR MA type II 0,9 9,6 1 n. c.

Modified POSS type 1,11 5,51 0 n. c.

PHOST type B 1,3 3,2 10 100

Modified POSS type 1,71 9,59 2 n. c.


ACR MA type I 2,0 4,3 2 n. c.


modified Fujitsu-type copolymer 2,44 125

ESCAP type 2,7 4,4 2 90

POSS type 2,7 14,8 0 n. c.

modified Fujitsu-type 3,11 4,92

Hybrid PHOST type C 3,9

COMA hybride ACR type 4 2,2 n. c.

modified ACR-type 4 1,9 n. c.

modified ACR-type 4,66 2,7 108

modified Fujitsu-type 5 1,66

modified ACR-type 5,34 3,7


modified Fujitsu-type 5,34 7,12

Fujitsu type 6,0 8,3 2


Modified PHOST type B 8,6 3,7

PHOST type A 8,7 7,1


COMA hybride ACR type 8,66 3,81 n. c.


PHOST type A 13,5 7,3

ESCAP type 13,5 3,5

Hybrid PHOST type C 13,6 8,5

Modified ESCAP type B 20,0

Open Frame Resist data of various polymer platforms

Open Frame Characterization

EUV exposures were done at the BESSY synchrotron and the open frame EUV exposure tool TEUVL, Infineon, Erlangen.

ExCITe T406


E S C A P - t y p e

2 4 8 n m

P H O S T - t y p e AL o w A c t i v a t i o n E n e r g y

2 4 8 n m

P H O S T - t y p e BH i g h A c t i v a t i o n E n e r g y

2 4 8 n m

M o d . E S C A P t y p e BH i g h A c t i v a t i o n E n e r g y

2 4 8 n m

O

C O

O

O H

O O

H 3 C

C H 3

C H 3

O H

OH 3 C

O

O H

O O

H 3 C

C H 3

C H 3

O H

O

C O

O

OH

Hybrid PHOST type C

Low Activation Energy

248 nm

COMA hybrid ACR type

Cycloolefin maleic

anhydride

Acrylic

193 nm

ACR-type

(acrylic ester)

193 nm

COMA-type

(Cycloolefin maleic

anhydride)

193 nm

O

O

O

OH

OO O O

OH Ot-Bu

O

n m p

O O

H3C

CH3

CH3

OH O CH3

O

OO

OO O

m

O

O

O

OH

F u j i t s u - t y p e( a d a m a n t y l l a c t o n e e s t e r )

1 9 3 n m

A C R - M A t y p e IS i - c o n t a i n i n g

1 9 3 n m

A C R - M A t y p e I I

1 9 3 n m

O

O

O

O

O

O

O OOO

O R

OO OO

O

O R

O

O OOO

O R

O

S i ( C H 3 ) 3O OO

O

O R

O

S i ( C H 3 ) 3S i ( C H 3 ) 3

O OOO

O R

OO OO

O

O R

O

O

O

O

O

O

O

Some polymer platforms screened for EUV resist

ExCITe T406


3. From each chemical platform resist were found by Open FrameTest which fullfil the sensitivity requirements <5mJ/cm² for testsof patterning performance (resolution, LER, …).

These patterning EUV exposures have been done at the 10xmicrostepper (0.088 NA) at the EUV-LLC Sandia.The resolution of 80 nm was limited not by the resists (which weknow from e-beam exposures) but by the aerial image of theexposure tool.

Result of open frame screnning for available EUV Resist samples

1. Most investigated chemical platforms are viable for EUV patterning.

2. No clear advantage could be found for either 193nm or 248nm type resists/polymers.

ExCITe T406


Patterning results at EUV-LLC 10x microstepperAZ LExp.5555PHS-MethacrylatePolymer

AZ AX 1050P-HSMethacrylate- copolymer

AZ AX 1120Pmodified methacrylateco polymer

Photospeed 1:1100 nm lines

1.6 mJ/cm² 6.4 mJ/cm² 10.2 mJ/cm²

Resolution 1:1 80 nm 80 nm 80 nm

LER 100nm lines1) 7.8 nm 6.3nm 3.9nm

ExCITe T406


Process conditions Sep 2004Resist Thickness: ~ 125nm on 4” wafer // Bakes: as indicated, on vacuum contact HP, Exposure : EUV 10x Microstepper, Livermore // NA: 0.088, 0.5 // Development: 60 s, immersion, 2.38% TMAH //

EUV Sandia Microstepper

Results100 nm l/s structures

F30L0035 (95/90-140/60)

905 pulses / 3.6 mJ/cm² 905 pulses / 3.6 mJ/cm²

F30L0035 (95/90-140/60) 748 pulses / 3.0 mJ/cm²

F30L0035 (120/60-130/60) horiz. line

F30L0035 (120/60-130/60)

748 pulses / 3.0 mJ/cm²

Mw=14 000

Correlation of Molecular weight of polymer with LER



EUV Sandia Microstepper Results100 nm l/s structures

F30L0036 (120/60-130/60) horiz. line


F30L0036 (120/60-130/60) horiz. line


F30L0036 (120/60-130/60)

1089 pulses / 4.3 mJ/cm² 1198 pulses / 4.7 mJ/cm²

F30L0036 (120/60-130/60)

F30L0036 (95/90-140/60)


Mw=45 000




1034 pulses / 4.1 mJ/cm²940 pulses / 3.7 mJ/cm²

F30L0039 (120/60-130/60) F30L0039 (120/60-130/60) horiz. line



F30L0039 (120/60-130/60) horiz.line

F30L0039 (120/60-130/60)

1137 pulses / 4.5 mJ/cm² / F=0.51137 pulses / 4.5 mJ/cm² / F=0

F30L0039 (95/90-140/60) F30L0039 (95/90-140/60)

Mw=14 000 50%Mw=45 000 50%



Screening of methacrylate-acrylate type based resists at Sandia for LER, sensitivity

3959pulses/10.1mJ/cm²/1411 pulses / 3.6 mJ/cm² /

F30L0030 10_4

EUV Standard

2668 pulses / 6,8 mJ/cm² 3724 pulses / 9,5 mJ/cm²

F30L0046 10_14

F30L0048 10_15

methacrylate-acrylate type

methacrylate type

methacrylate-acrylate typePAG variation


EXP # Lot ID Wafer #

Nominal dose

(mJ/cm2)

DTS (mJ/cm2

@ 100 nm) LER (nm) RES (nm) Remarks

0 EUV 2D 040914_001 6.8 5.0 Standard1 F30L0042 040914_002 4.1 4.0 6.2 > 60 adhesion failure

MA- coPoly F30L0030 040914_004 7.7 Overdosed 9.0 30.0 high LER -> EXP #11MA-A coPoly F30L0031 040914_003 5.6 5.6 8.8 40.0 bridging

mod. ESCAPE F30L0034 040914_005 3.5 3.6 7.4 > 60 resolution limitmod. ESCAPE F30L0035 040914_006 3.5 3.1 8.6 > 60 resolution limitmod. ESCAPE F30L0036 040914_007 4.2 4.6 6.2 > 60 resolution limitmod. ESCAPE F30L0037 040914_008 4.2 4.2 8.1 60.0 resolution limitmod. ESCAPE F30L0038 040914_009 3.7 3.6 8.0 50.0 resolution limitmod. ESCAPE F30L0039 040914_010 3.7 3.4 7.6 50.0 resolution limitmod. ESCAPE F30L0040 040914_011 5.1 5.4 6.0 60.0 resolution limit

MA- coPoly F30L0030 040915_002 2.7 2.9 8.1 25 ??? very roughMA- coPoly F30L0030 040915_003 3.0 2.7 7.3 25 ??? very rough

mod. ESCAPE F30L0034 040915_004 3.0 3.6 9.7 > 50mod. ESCAPE F30L0035 040915_005 3.0 3.0 9.0 > 50mod. ESCAPE F30L0036 040915_006 3.5 4.6 7.9 > 50MA-A coPoly F30L0025 040915_007 9.0 6.7 7.9 25 ??? very roughMA- coPoly F30L0030 040915_008 3.0 2.2 8.1 25 ??? very rough

mod. ESCAPE F30L0037mod. ESCAPE F30L0038mod. ESCAPE F30L0039mod. ESCAPE F30L0040

21 F30L0024-D1MA- coPoly F30L0030

mod. ESCAPE F30L0043mod. ESCAPE F30L0044mod. ESCAPE F30L0045

MA- coPoly F30L0046 13.6 5.7 40.0 nested line, good performanceMA-A coPoly F30L0047MA- coPoly F30L0048 13.6 ~5.0 35 - 40 nested line, scum

not requested

not requested

EUV Berkeley

not requestednot requestednot requested

EUV Exposure testsat Berkeley when MET with higher resolution capability was available

Tests for resist resolution and LER, sensitivity


EXPF30L0050 X-sections

Slot 10

45 nm

40 nm

Dose 29.3

Dose 35.6

Dose 29.3

Dose 35.6

+- 43 nm

+- 40 nm

Resolution test with Methacrylate-acrylate EUV Resist at PSIInterference EUV Lithography

ExCITe T406


Conclusion for resist formulation

The CAR resist material tested so fare for EUV Lithography does not fulfill the needed reqirements of an EUV resist

For resist evaluation and selection of proper resist material is needed

• Access to high resolution exposure tool• Stable process conditions• Reproducible and comparable metrology (LER measurement, high

resolving SEM)

If CAR reach its final resolution limit, project for new resist chemistry is proposed.

euv resist evaluation excite t406 and more moore, sp3 wp6,

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