ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

Introduction ExCITe Resist

WP Leader: InfineonWolf-Dieter Domke

ExCITe/More Moore Meeting

May 12, 2005Athens, Greece

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

WP 1: EUV Resist Technology Introduction

Task 1.1 Preliminary Resist Materials Characterization (1Q03 – 2Q05)

– Bulk litho properties („open frame“)

– Outgassing in vacuum and under EUV radiation

– Ultra-Thin Resist thermal properties

– Correlation of LER with polymer properties and diffusion

Task 1.2 EUV Resist Systems for the ≤ 45nm Nodes (1Q04 – 4Q05)

– Printing capability

– Assessment of resolution limitations (e.g. LER )

– Optimize resist formulation and processing

– Identification of resist and process roadblocks for the 45nm node

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

Koen van Ingen Schenau

Jean-Yves RobicKarl van Werden

Kurt Ronse Wolf-Dieter Domke *

Peter Zandbergen **

*) Work Package 1 Leader**) MEDEA+ T406 Project Leader

Italy: Carmelo Romeo

France: Daniel Henry

Enzo Di Fabrizio

Michele Bertolo

Harun Solak

WP 1: EUV Resist Technology Cooperation

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

2003 2004 2005Q1 Q2 Q3 Q4Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3

02Q4

Definition phase

Basic materials characterization Resist formulation & characterization

Open frame characterization

Patterning Characterization, Screening

Hardmask, process characterization

Definition phase

M1.1.1 M1.1.2

M1.1.5 M1.1.6

M1.2.1

M1.1.8M1.1.7

M1.2.2 M1.2.4

M1.2.6M1.2.5master milestones

we are here now

M1.2.3

WP 1: EUV Resist Technology Status and Results

report on resist and process limitations resist screening

status report

Resist & process roadblocks for 45nm

node identified

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

9 out of 12 milestones done.

Consolidated partnership within IEUVI, Sematech, International Conferences & Workshops – involved in specs & methodology discussions.

Resist Materials Characterization : open frame exposures finished, fundamentals for shot noise, diffusion and LER studied with diffused point-spread function methodology.

MET and Interference Exposures worldwide successfully started. Resolution is limited by the resists, no longer by the tools.

Workshops on Resist Limitations initiated

Status of EUV resist processing issues for 45nm node identified and reported.

EUV resist outgassing methodology developed; outgassing of some resist classes quantified – ongoing work in IEUVI.

9 out of 12 milestones done.

Consolidated partnership within IEUVI, Sematech, International Conferences & Workshops – involved in specs & methodology discussions.

Resist Materials Characterization : open frame exposures finished, fundamentals for shot noise, diffusion and LER studied with diffused point-spread function methodology.

MET and Interference Exposures worldwide successfully started. Resolution is limited by the resists, no longer by the tools.

Workshops on Resist Limitations initiated

Status of EUV resist processing issues for 45nm node identified and reported.

EUV resist outgassing methodology developed; outgassing of some resist classes quantified – ongoing work in IEUVI.

WP 1: EUV Resist Technology Highlights (as presented at Oberkochen Review)

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

PMMA (non-CA resist) imaging at PSI

Best resolution obtained with optical lithography so farBest resolution obtained with optical lithography so far

17.5nm L/S 35nm contacts15nm L/S

Resist Performance Screening by EUV Interference Lithography: Resolution no longer limited by tool, but by resist ( 3rd Int EUV Symp.; Miyazaki)

Resist Performance Screening by EUV Interference Lithography: Resolution no longer limited by tool, but by resist ( 3rd Int EUV Symp.; Miyazaki) 40nm in CA-resist40nm in CA-resist

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

WP 1: EUV Resist Technology ALS/MET evaluation ongoing

35nm L/S in MET-2D, left: dark field mask, right: bright field mask

ExCITe exposures at ALS/MET: resist screening, flare, & process experiments

Flare has a dramatic impact on LER

Flare has a dramatic impact on LER

50 nm L/S: 300nm DoF at E= 17.85mJ/cm2

F=-200nm -150 -100 -50 0 +50 +100

process window evaluation

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

0,00E+00

1,00E-09

2,00E-09

3,00E-09

4,00E-09

5,00E-09

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amu

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WP 1: EUV Resist Technology Outgassing Evaluation

ESCAP (UV5)MS spectrum

Online MS and proofplate method installed at Leti; first EUV resist outgassing results available

Online MS and proofplate method installed at Leti; first EUV resist outgassing results available

Reference

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Conc

entrat

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Analyzed region

C 1s

Si 2p

O 1s

Si 2p

Sticked bare Si

Exposed region : Ø=38 mm

Photo-Resist

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

Polymers with high tendency to chain scissioning show the most outgassing

acrylic model resists show more chain scissioning in EUV compared to even 157nm.

Outgassing at EUV of different polymer platforms vary by 3 orders of magnitude, DUV resists show less outgassing than 193nm resists.

ESCAP resist shows dose-dependent scissioning / crosslinking behavior

Only DUV resist platform fulfill ASMLs outgassing specs for -tool

Polymers with high tendency to chain scissioning show the most outgassing

acrylic model resists show more chain scissioning in EUV compared to even 157nm.

Outgassing at EUV of different polymer platforms vary by 3 orders of magnitude, DUV resists show less outgassing than 193nm resists.

ESCAP resist shows dose-dependent scissioning / crosslinking behavior

Only DUV resist platform fulfill ASMLs outgassing specs for -tool

WP 1: EUV Resist Technology Outgassing Evaluation

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Mw (157)

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aliz

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@ EUV @ 193nmESCAP 5 E+11 2 E+11PHOST 3 E+12 1 E+12POSS 1 E+13

COMA-Si 2 E+13ACR-MA 3 E+14 6 E+12

Quantitation of total outgassing [molecules/cm2 sec]

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

WP 1: EUV Resist Technology Line Edge Roughness & Diffusion

Method of diffused point-spread function developed and used for determination of resist diffusion limitations

Method of diffused point-spread function developed and used for determination of resist diffusion limitations

Sensor, Resist

Lens

Point Spread Function (PSF)

Reticle

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SB110C SB115C SB120C

PEB 110CPEB 115C (std.)

PEB 120C

Diffusion Length (nm)

Diffusion lengths are correlated to LERDiffusion lengths are correlated to LER

ExCITe T406 – WP 1 - EUV Resist TechnologyQuarterly Meeting

Athens, 11/12. 5. 2005

WP 1: EUV Resist Technology Future Outlook (as presented at Oberkochen Review)

Resist Characterisation: BEL debugging is still ongoing (M1.2.1-2)

Open Frame Characterization is finished (M1.1.5 & M1.1.7); Emphasis of Patterning experiments is resist screening, flare impact and processing issues (bake, diffusion, LER, ..) (M1.2.3-5)

Resist & Process specs will be constantly updated during IEUVI Working Group Interactions (M1.2.3-5)

Resist Outgassing experiments will be continued by the ExCITe partners. Standardization of Outgassing protocols will be driven through interaction MEDEA / IEUVI / Sematech

European Workshop on Resist Limitations will be continued (MEDEA ExCITe / More Moore (organizing)) and will be used to drive international activities on:

– Understanding and Optimization of Photospeed, Line Edge Roughness and Shot Noise

– Understanding of the Resolution Limits of Chemically Amplified Resists

– Understanding, what is a safe level of Resist Outgassing?