opa381, opa2381: precision, low power, 18mhz ... · pdf filefeatures over 250khz...

FEATURES OVER 250kHz TRANSIMPEDANCE

BANDWIDTH DYNAMIC RANGE: 5 Decades EXCELLENT LONG-TERM STABILITY LOW VOLTAGE NOISE: 10nV/ √Hz BIAS CURRENT: 3pA OFFSET VOLTAGE: 25 µV (max) OFFSET DRIFT: 0.1µV/°C (max) GAIN BANDWIDTH: 18MHz QUIESCENT CURRENT: 800µA FAST OVERLOAD RECOVERY SUPPLY RANGE: 2.7V to 5.5V SINGLE AND DUAL VERSIONS MicroPACKAGE: DFN-8, MSOP-8

APPLICATIONS PRECISION I/V CONVERSION PHOTODIODE MONITORING OPTICAL AMPLIFIERS CAT-SCANNER FRONT-END PHOTO LAB EQUIPMENT

1MΩ

RF

100kΩ

+5V

7

2

3

4

6

OPA381

65pF

75pF

CDIODE

−5V

RP

(OptionalPulldownResistor)

VOUT(0V to 4.4V)

Photodiode

DESCRIPTIONThe OPA381 family of transimpedance amplifiers provides18MHz of Gain Bandwidth (GBW), with extremely highprecision, excellent long-term stability, and very low 1/f noise.The OPA381 features an offset voltage of 25µV (max), offsetdrift of 0.1µV/°C (max), and bias current of 3pA. The OPA381far exceeds the offset, drift, and noise performance thatconventional JFET op amps provide.

The signal bandwidth of a transimpedance amplifier dependslargely on the GBW of the amplifier and the parasiticcapacitance of the photodiode, as well as the feedbackresistor. The 18MHz GBW of the OPA381 enables a trans-impedance bandwidth of > 250kHz in most configurations.The OPA381 is ideally suited for fast control loops for powerlevel measurement on an optical fiber.

As a result of the high precision and low-noise characteristicsof the OPA381, a dynamic range of 5 decades can beachieved. This capability allows the measurement of signalcurrents on the order of 10nA, and up to 1mA in a single I/Vconversion stage. In contrast to logarithmic amplifiers, theOPA381 provides very wide bandwidth throughout the fulldynamic range. By using an external pulldown resistor to–5V, the output voltage range can be extended to include 0V.

The OPA381 and OPA2381 are both available in MSOP-8and DFN-8 (3mm x 3mm) packages. They are specifiedfrom –40°C to +125°C.

OPA381 RELATED DEVICESPRODUCT FEATURES

OPA38090MHz GBW, 2.7V to 5.5V SupplyTransimpedance Amplifier

OPA132 16MHz GBW, Precision FET Op Amp ±15V

OPA300 150MHz GBW, Low-Noise, 2.7V to 5.5V Supply

OPA335 10µV VOS, Zero-Drift, 2.5V to 5V Supply

OPA350 500µV VOS, 38MHz, 2.5V to 5V Supply

OPA354 100MHz GBW CMOS, RRIO, 2.5V to 5V Supply

OPA355 200MHz GBW CMOS, 2.5V to 5V Supply

OPA656/7 230MHz, Precision FET, ±5V

OPA381OPA2381

SBOS313B − AUGUST 2004 − REVISED NOVEMBER 2004

Precision, Low Power, 18MHzTransimpedance Amplifier

! !

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Copyright 2004, Texas Instruments Incorporated

All trademarks are the property of their respective owners.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instrumentssemiconductor products and disclaimers thereto appears at the end of this data sheet.

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ABSOLUTE MAXIMUM RATINGS (1)

Voltage Supply +7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Signal Input Terminals(2), Voltage (V−) −0.5V to (V+) + 0.5V. . . . .

Current ±10mA. . . . . . . . . . . . . . . . . . . . . Short-Circuit Current(3) Continuous. . . . . . . . . . . . . . . . . . . . . . . . Operating Temperature Range −40°C to +125°C. . . . . . . . . . . . . . . Storage Temperature Range −65°C to +150°C. . . . . . . . . . . . . . . . . Junction Temperature +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead Temperature (soldering, 10s) +300°C. . . . . . . . . . . . . . . . . . . . . OPA381 ESD Rating (Human Body Model) 2000V. . . . . . . . . . . . . . . OPA2381 ESD Rating (Human Body Model) 1500V. . . . . . . . . . . . . .

(1) Stresses above these ratings may cause permanent damage.Exposure to absolute maximum conditions for extended periodsmay degrade device reliability. These are stress ratings only, andfunctional operation of the device at these or any other conditionsbeyond those specified is not implied.

(2) Input terminals are diode clamped to the power-supply rails. Inputsignals that can swing more than 0.5V beyond the supply railsshould be current limited to 10mA or less.

(3) Short-circuit to ground; one amplifier per package.

ELECTROSTATIC DISCHARGE SENSITIVITY

This integrated circuit can be damaged by ESD. TexasInstruments recommends that all integrated circuits behandled with appropriate precautions. Failure to observe

proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation tocomplete device failure. Precision integrated circuits may be moresusceptible to damage because very small parametric changes couldcause the device not to meet its published specifications.

PACKAGE/ORDERING INFORMATION (1)

PRODUCT PACKAGE-LEADPACKAGE

DESIGNATOR

SPECIFIEDTEMPERATURE

RANGE

PACKAGEMARKING

ORDERINGNUMBER

TRANSPORTMEDIA, QUANTITY

OPA381 MSOP-8 DGK −40°C to +125°C A64OPA381AIDGKT Tape and Reel, 250

OPA381 MSOP-8 DGK −40°C to +125°C A64OPA381AIDGKR Tape and Reel, 2500

OPA381 DFN-8 DRB −40°C to +125°C A65OPA381AIDRBT Tape and Reel, 250

OPA381 DFN-8 DRB −40°C to +125°C A65OPA381AIDRBR Tape and Reel, 3000

OPA2381 MSOP-8 DGK −40°C to +125°C A62OPA2381AIDGKT Tape and Reel, 250

OPA2381 MSOP-8 DGK −40°C to +125°C A62OPA2381AIDGKR Tape and Reel, 2500

OPA2381 DFN-8 DRB −40°C to +125°C A63OPA2381AIDRBT Tape and Reel, 250

OPA2381 DFN-8 DRB −40°C to +125°C A63OPA2381AIDRBR Tape and Reel, 3000

(1) For the most current package and ordering information, see the Package Option Addendum located at the end of this data sheet.

PIN ASSIGNMENTS

DFN−8

Top View

1

2

3

4

8

7

6

5

NC(1)

V+

Out

NC(1)

NC(1)

−In

+In

V−

OPA381

MSOP−8

1

2

3

4

8

7

6

5

V+

Out B

−In B

+In B

Out A

−In A

+In A

V−

OPA2381

MSOP−8

1

2

3

4

8

7

6

5

NC(1)

V+

Out

NC(1)

NC(1)

−In

+In

V−

OPA381

ExposedThermalDie Pad

onUnderside

1

2

3

4

8

7

6

5

V+

Out B

− In B

+In B

Out A

− In A

+In A

V−

OPA2381

ExposedThermalDie Pad

onUnderside

DFN−8

NOTE: (1) NC indicates no internal connection.

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ELECTRICAL CHARACTERISTICS: V S = +2.7V to +5.5V Boldface limits apply over the temperature range, TA = −40°C to +125°C.All specifications at TA = +25°C, RL = 10kΩ connected to VS/2, and VOUT = VS/2, unless otherwise noted.

OPA381

PARAMETER CONDITION MIN TYP MAX UNITSOFFSET VOLTAGEInput Offset Voltage VOS VS = +5V, VCM = 0V 7 25 µV

Drift dVOS/dT 0.03 0.1 µV/°Cvs Power Supply PSRR VS = +2.7V to +5.5V, VCM = 0V 3.5 20 µV/VOver Temperature VS = +2.7V to +5.5V, VCM = 0V 20 µV/VLong-Term Stability(1) See Note (1)

Channel Separation, dc 1 µV/V

INPUT BIAS CURRENTInput Bias Current IB VCM = VS/2 3 ±50 pA

Over Temperature See Typical CharacteristicsInput Offset Current IOS VCM = VS/2 6 ±100 pA

NOISEInput Voltage Noise, f = 0.1Hz to 10Hz en VS = +5V, VCM = 0V 3 µVPPInput Voltage Noise Density, f = 10kHz en VS = +5V, VCM = 0V 70 nV/√HzInput Voltage Noise Density, f > 1MHz en VS = +5V, VCM = 0V 10 nV/√HzInput Current Noise Density, f = 10kHz in VS = +5V, VCM = 0V 20 fA/√Hz

INPUT VOLTAGE RANGECommon-Mode Voltage Range VCM V− (V+) − 1.8V VCommon-Mode Rejection Ratio CMRR VS = +5V, (V−) < VCM < (V+) − 1.8V 95 110 dB

INPUT IMPEDANCEDifferential Capacitance 1 pFCommon-Mode Resistance and Capacitance 1013|| 2.5 Ω || pF

OPEN-LOOP GAINOpen-Loop Voltage Gain AOL 0.05V < VO < (V+) − 0.6V, VCM = VS/2, VS = 5V 110 135 dB

0V < VO < (V+) − 0.6V, VCM = 0V, RP = 10kΩ to −5V(2), VS = 5V 106 135 dB

FREQUENCY RESPONSEGain-Bandwidth Product GBW 18 MHzSlew Rate SR G = +1 12 V/µsSettling Time, 0.0015%(3) VS = +5V, 4V Step, G = +1, OPA381 7 µsSettling Time, 0.003%(3) VS = +5V, 4V Step, G = +1, OPA2381 7 µsOverload Recovery Time(4), (5) VIN • G = > VS 200 ns

OUTPUTVoltage Output Swing from Positive Rail RL = 10kΩ 400 600 mVVoltage Output Swing from Negative Rail RL = 10kΩ 30 50 mVVoltage Output Swing from Positive Rail RP = 10kΩ to −5V(2) 400 600 mVVoltage Output Swing from Negative Rail RP = 10kΩ to −5V(2) −20 0 mVOutput Current IOUT 10 mAShort-Circuit Current ISC 20 mACapacitive Load Drive CLOAD See Typical CharacteristicsOpen-Loop Output Impedance RO F = 1MHz, IO = 0 250 Ω

POWER SUPPLYSpecified Voltage Range VS 2.7 5.5 VQuiescent Current (per amplifier) IQ IO = 0A 0.8 1 mA

Over Temperature 1.1 mA

TEMPERATURE RANGESpecified and Operating Range −40 +125 °CStorage Range −65 +150 °CThermal Resistance JA

MSOP-8 150 °C/WDFN-8 65 °C/W

(1) High temperature operating life characterization of zero-drift op amps applying the techniques used in the OPA381 have repeatedly demonstrated randomlydistributed variation approximately equal to measurement repeatability of 1µV. This consistency gives confidence in the stability and repeatability of these zero-drift techniques.

(2) Tested with output connected only to RP, a pulldown resistor connected between VOUT and −5V, as shown in Figure 3. See also Applications section, AchievingOutput Swing to Negative Rail.

(3) Transimpedance frequency of 250kHz.(4) Time required to return to linear operation.(5) From positive rail.

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TYPICAL CHARACTERISTICS: V S = +2.7V to +5.5V

All specifications at TA = +25°C, RL = 10kΩ connected to VS/2, and VOUT = VS/2, unless otherwise noted.

140

120

100

80

60

40

20

0

−20

OPEN−LOOP GAIN AND PHASE vs FREQUENCY

Frequency (Hz)

Ope

n−Lo

opG

ain

(dB

)

200

150

100

50

0

−50

−100

−150

−200

Ph

ase

()

10 100k 1M100 1k 10k 100M10M

Phase

Gain

140

120

100

80

60

40

20

0

−20

−40

−60

POWER−SUPPLY REJECTION RATIO ANDCOMMON−MODE REJECTION vs FREQUENCY

Frequency (Hz)

PS

RR

,C

MR

R(d

B)

10 100k 1M100 1k 10k 100M10M

PSRR

CMRR

90

80

70

60

50

40

30

20

10

PHASE MARGIN vs LOAD CAPACITANCE

CL Load Capacitance (pF)

Pha

seM

arg

in(

)

0 100 200 300 400 500 600 700 900800 1000

RS = 100Ω

RS = 50Ω

RS = 0Ω

50kΩ

100pF

RS

CL

1.00

0.90

0.85

0.80

0.75

0.70

0.65

0.60

0.55

0.50

QUIESCENT CURRENT vs TEMPERATURE

Qui

esc

entC

urre

nt(m

A)

2.7V

5.5V

Temperature (C)

−40 100 125−25 0 25 50 75

QUIESCENT CURRENT vs SUPPLY VOLTAGE

Supply Voltage (V)

2.7 3.1 3.5 3.9 4.3 4.7 5.1 5.5

1.00

0.90

0.85

0.80

0.75

0.70

0.65

0.60

0.55

0.50

Qui

esce

ntC

urre

nt(m

A)

1000

100

10

1

INPUT BIAS CURRENT vs TEMPERATURE

Temperature (C)

Inpu

tB

ias

Cu

rre

nt(p

A)

−40 100 125−25 0 25 50 75

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TYPICAL CHARACTERISTICS: V S = +2.7V to +5.5V (continued)


INPUT BIAS CURRENTvs COMMON−MODE VOLTAGE

Common−Mode Voltage (V)

−IB

+IB

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

50

40

30

20

10

0

−10

−20

−30

−40

−50

Inp

utB

ias

Cur

ren

t(p

A)

OUTPUT VOLTAGE SWING vs OUTPUT CURRENT(VS = 5.5V)

Out

putS

win

g(V

)

5 10 15 20 250

Output Current (mA)

(V+)

(V+) − 1

(V+) − 2

(V−) + 2

(V−) + 1

(V−)

−40C

+125C

+25°C

OUTPUT VOLTAGE SWING vs OUTPUT CURRENT(VS = 2.7V)

Out

putS

win

g(V

)

5 10 15 20 250

(V+)

(V+) − 0.35

(V+) − 0.70

(V+) −1.05

(V+) −1.40

(V−) + 1.40

(V−) + 1.05

(V−) + 0.70

(V−) + 0.35

(V−)

Output Current (mA)

+125C

−40C

+25C

OFFSET VOLTAGE DRIFTPRODUCTION DISTRIBUTION

Offset Voltage Drift (µV/C)

Pop

ula

tion

− 0.1

0− 0

.09

− 0.0

8− 0

.07

− 0.0

6− 0

.05

− 0.0

4− 0

.03

− 0.0

2− 0

.01

0.00

0.01

0.02

0.03

0.04

0.05

0.06

0.07

0.08

0.09

0.10

OFFSET VOLTAGE PRODUCTION DISTRIBUTION

Offset Voltage (µV)

Pop

ulat

ion

− 25

.00

− 20

.00

− 15

.00

− 10

.00

− 5.0

0

0.0

0

5.0

0

10.0

0

15.0

0

20.0

0

25.0

0

GAIN BANDWIDTH vs POWER SUPPLY VOLTAGE

Ga

inB

andw

idth

(MH

z)

3.5 4.03.0 4.5 5.0 5.52.5

20

19

18

17

16

15

14

13

12

Power Supply Voltage (V)

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CF

Circuit for Transimpedance Amplifier Characteristic curves on this page.

RF

CDIODE

OPA381

CSTRAY

TRANSIMPEDANCE AMP CHARACTERISTIC

100

150140130120110100

908070605040302010

1k 10k 100k 1M 10M 100M

Frequency (Hz)

Tra

nsim

ped

anc

eG

ain

(V/A

indB

)

RF = 10MΩ

CDIODE = 100pF

CF = 0.5pF

RF = 1MΩ CF = 1pF

RF = 100kΩ CF = 4pF


CSTRAY (parasitic) = 0.2pF


100

150140130120110100

908070605040302010

1k 10k 100k 1M 10M 100M

Frequency (Hz)

Tra

nsim

ped

anc

eG

ain

(V/A

indB

)

RF = 10MΩ

CDIODE = 50pF

RF = 1MΩ CF = 1pF


RF = 10kΩ CF = 8pF



100 1k 10k 100k 1M 10M 100M

Frequency (Hz)

Tra

nsim

ped

anc

eG

ain

(V/A

indB

)

150140130120110100908070605040302010


CDIODE = 20pF

RF = 10MΩ

RF = 1MΩ CF = 0.5pF


RF = 10kΩCF = 5pF


100 1k 10k 100k 1M 10M 100M

Frequency (Hz)

Tra

nsim

ped

anc

eG

ain

(V/A

indB

)

150140130120110100908070605040302010

CDIODE = 10pF


RF = 10MΩ

RF = 1MΩCF = 0.5pF


RF = 10kΩ

CF = 4pF


100 1k 10k 100k 1M 10M 100M

Frequency (Hz)

Tra

nsi

mpe

dan

ceG

ain

(V/A

indB

)

150140130120110100908070605040302010


CDIODE = 1pF

RF = 10MΩ

RF = 1MΩ

RF = 100kΩ

RF = 10kΩ

CF = 0.5pF

CF = 2pF

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All specifications at TA = +25°C, and RL = 10kΩ connected to VS/2, unless otherwise noted.

SMALL−SIGNAL STEP RESPONSE(with or without pull−down)

50m

V/d

iv

Time (100ns/div)

50kΩ

10kΩ

CF

VP

200kHz (CF = 16pF)

1MHz(CF = 3pF)

VP = 0V or −5V

OPA381

LARGE−SIGNAL STEP RESPONSE(with pull−down)

1V/d

iv

Time (100ns/div)

50kΩ

10kΩ

3pF

−5V

OPA381

LARGE−SIGNAL STEP RESPONSE(without pull−down)

Time (100ns/div)

1V/d

iv

50kΩ

10kΩ

CF

1MHz(CF = 3pF)

200kHz(CF = 16pF)

OPA381

OVERLOAD RECOVERY

Time (ns)

6

4

2

0

0.8

0

VO

UT

(V/d

iv)

I IN(m

A/d

iv)

0 100 200 300 400 500 600 700 800 900 1000

VOUT

20kΩ

10kΩIIN

VP

40pF

250µA

IIN

NonlinearOperation

LinearOperation

OPA381

OPA2381 VP = 0V or −5V

OPA381

1000

100

10

1

INPUT VOLTAGE NOISE SPECTRAL DENSITY

Frequency (Hz)

Inpu

tVo

ltag

eN

oise

(nV

/√(H

z)

10 100 100k 1M10k1k 10M

CHANNEL SEPARATION vs INPUT FREQUENCY

Input Frequency (Hz)

160

140

120

100

80

60

40

20

0

−20

−40

Cha

nnel

Se

para

tion

(dB

)

10 100 1k 10k 100k 1M 10M 100M

OPA2381

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APPLICATIONS INFORMATIONBASIC OPERATION

The OPA381 is a high-precision transimpedanceamplifier with very low 1/f noise. Due to its uniquearchitecture, the OPA381 has excellent long-term inputvoltage offset stability.

The OPA381 performance results from an internalauto-zero amplifier combined with a high-speedamplifier. The OPA381 has been designed with circuitryto improve overload recovery and settling time over thatachieved by a traditional composite approach. It hasbeen specifically designed and characterized toaccommodate circuit options to allow 0V outputoperation (see Figure 3).

The OPA381 is used in inverting configurations, with thenoninverting input used as a fixed biasing point.Figure 1 shows the OPA381 in a typical configuration.Power-supply pins should be bypassed with 1µFceramic or tantalum capacitors. Electrolytic capacitorsare not recommended.

OPA381VOUT

(1)

(0.5V to 4.4V)

VBIAS = 0.5V

+5V1µF

RF

CF

λ

NOTE: (1) VOUT = 0.5V in dark conditions.

Figure 1. OPA381 Typical Configuration

OPERATING VOLTAGEOPA381 series op amps are fully specified from 2.7V to5.5V over a temperature range of −40°C to +125°C.Parameters that vary significantly with operatingvoltages or temperature are shown in the TypicalCharacteristics.

INTERNAL OFFSET CORRECTION

The OPA381 series op amps use an auto-zero topologywith a time-continuous 18MHz op amp in the signalpath. This amplifier is zero-corrected every 100µs usinga proprietary technique. Upon power-up, the amplifierrequires approximately 400µs to achieve specified VOSaccuracy, which includes one full auto-zero cycle ofapproximately 100µs and the start-up time for the biascircuitry. Prior to this time, the amplifier will functionproperly but with unspecified offset voltage.

This design has virtually no aliasing and low noise. Zerocorrection occurs at a 10kHz rate, but there is virtuallyno fundamental noise energy present at that frequencydue to internal filtering. For all practical purposes, anyglitches have energy at 20MHz or higher and are easilyfiltered, if necessary. Most applications are not sensitiveto such high-frequency noise, and no filtering isrequired.

INPUT VOLTAGE

The input common-mode voltage range of the OPA381series extends from V− to (V+) –1.8V. With input signalsabove this common-mode range, the amplifier will nolonger provide a valid output value, but it will not latchor invert.

INPUT OVERVOLTAGE PROTECTION

Device inputs are protected by ESD diodes that willconduct if the input voltages exceed the power suppliesby more than approximately 500mV. Momentaryvoltages greater than 500mV beyond the power supplycan be tolerated if the current is limited to 10mA. TheOPA381 family features no phase inversion when theinputs extend beyond supplies if the input is currentlimited.

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OUTPUT RANGE

The OPA381 is specified to swing within at least 600mVof the positive rail and 50mV of the negative rail with a10kΩ load while maintaining good linearity. Swing to thenegative rail while maintaining linearity can be extendedto 0V—see the section, Achieving Output Swing toGround. See the Typical Characteristic curve, OutputVoltage Swing vs Output Current.

The OPA381 can swing slightly closer than specified tothe positive rail; however, linearity will decrease and ahigh-speed overload recovery clamp limits the amountof positive output voltage swing available—seeFigure 2.

25

20

15

10

5

0

−5

−10

−15

−20

−25

VOUT (V)

VO

S(µ

V)

−1 0 1 2 3 4 5 6

VS = 5.5V

RP = 10kΩ to −5VRL = 10kΩ to VS/2

Figure 2. Effect of High-Speed OverloadRecovery Clamp on Output Voltage

OVERLOAD RECOVERY

The OPA381 has been designed to prevent outputsaturation. After being overdriven to the positive rail, itwill typically require only 200ns to return to linearoperation. The time required for negative overloadrecovery is greater, unless a pulldown resistorconnected to a more negative supply is used to extendthe output swing all the way to the negative rail—see thefollowing section, Achieving Output Swing to Ground.

ACHIEVING OUTPUT SWING TO GROUND

Some applications require output voltage swing from0V to a positive full-scale voltage (such as +4.096V)with excellent accuracy. With most single-supply opamps, problems arise when the output signalapproaches 0V, near the lower output swing limit of asingle-supply op amp. A good single-supply op ampmay swing close to single-supply ground, but will notreach 0V.

The output of the OPA381 can be made to swing to 0V,or slightly below, on a single-supply power source. Thisextended output swing requires the use of anotherresistor and an additional negative power supply. Apulldown resistor may be connected between theoutput and the negative supply to pull the output downto 0V; see Figure 3.

OPA381 VOUT

RF

RP = 10kΩ

V+ = +5V

V− = Gnd

−VS = −5VNegative Supply

λ

RP =−VS

500µA

Figure 3. Amplifier with Pull-Down Resistor toAchieve V OUT = 0V

The OPA381 has an output stage that allows the outputvoltage to be pulled to its negative supply rail using thistechnique. However, this technique only works withsome types of output stages. The OPA381 has beendesigned to perform well with this method. Accuracy isexcellent down to 0V. Reliable operation is assured overthe specified temperature range.

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BIASING PHOTODIODES IN SINGLE-SUPPLYCIRCUITS

The +IN input can be biased with a positive DC voltageto offset the output voltage and allow the amplifieroutput to indicate a true zero photodiode measurementwhen the photodiode is not exposed to any light. It willalso prevent the added delay that results from comingout of the negative rail. This bias voltage appearsacross the photodiode, providing a reverse bias forfaster operation. An RC filter placed at this bias point willreduce noise. (Refer to Figure 4.) This bias voltage canalso serve as an offset bias point for an ADC with rangethat does not include ground.

OPA381VOUT = IDRF + VBIAS

100kΩ

V+

RF10MΩ

ID

CF(1)

< 1pF

0.1µF

λ

NOTE: (1) CF is optional to prevent gain peaking.It includes the stray capacitance of RF.

+VBIAS

[0V to (V+) − 1.8V]

Figure 4. Photodiode with Filtered Reverse BiasVoltage

TRANSIMPEDANCE AMPLIFIER

Wide bandwidth, low input bias current and low inputvoltage and current noise make the OPA381 an idealwideband photodiode transimpedance amplifier. Lowvoltage noise is important because photodiodecapacitance causes the effective noise gain of thecircuit to increase at high frequency.

The key elements to a transimpedance design areshown in Figure 5:

the total input capacitance (CTOT), consisting of thephotodiode capacitance (CDIODE) plus the parasiticcommon-mode and differential-mode inputcapacitance (2.5pF + 1pF for the OPA381);

the desired transimpedance gain (RF);

the Gain Bandwidth Product (GBW) for theOPA381 (18MHz).

With these three variables set, the feedback capacitorvalue (CF) can be set to control the frequency response.CSTRAY is the stray capacitance of RF, which is 0.2pF fora typical surface-mount resistor.

To achieve a maximally flat 2nd-order Butterworthfrequency response, the feedback pole should be setto:

12RF

CF CSTRAY GBW

4RFCTOT

Bandwidth is calculated by:

f3dB GBW2RFCTOT Hz

These equations will result in maximumtransimpedance bandwidth. For even highertransimpedance bandwidth, the high-speed CMOSOPA380 (90MHz GBW), the OPA300 (150MHz GBW),or the OPA656 (230MHz GBW) may be used.

For additional information, refer to Application BulletinAB−050 (SBOA055), Compensate TransimpedanceAmplifiers Intuitively, available for download atwww.ti.com.

CTOT(3) OPA381 VOUT

−5V

10MΩ

+5V

RF

CF(1)

CSTRAY(2)

λ

NOTE: (1) CF is optional to prevent gain peaking.(2) CSTRAY is the stray capacitance of RF

(typically, 0.2pF for a surface−mount resistor).(3) CTOT is the photodiode capacitance plus OPA381

input capacitance.

RP (optionalpulldown resistor)

Figure 5. Transimpedance Amplifier

(1)

(2)

"#$%"#$


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11

TRANSIMPEDANCE BANDWIDTH ANDNOISE

Limiting the gain set by RF can decrease the noiseoccurring at the output of the transimpedance circuit.However, all required gain should occur in thetransimpedance stage, since adding gain after thetransimpedance amplifier generally produces poorernoise performance. The noise spectral densityproduced by RF increases with the square-root of RF,whereas the signal increases linearly. Therefore,signal-to-noise ratio is improved when all the requiredgain is placed in the transimpedance stage.

Total noise increases with increased bandwidth. Limitthe circuit bandwidth to only that required. Use acapacitor, CF, across the feedback resistor, RF, to limitbandwidth (even if not required for stability), if totaloutput noise is a concern.

Figure 6a shows the transimpedance circuit without anyfeedback capacitor. The resulting transimpedance gainof this circuit is shown in Figure 7. The –3dB point isapproximately 3MHz. Adding a 16pF feedbackcapacitor (Figure 6b) will limit the bandwidth and resultin a –3dB point at approximately 200kHz (seen inFigure 7). Output noise will be further reduced byadding a filter (RFILTER and CFILTER) to create a secondpole (Figure 6c). This second pole is placed within thefeedback loop to maintain the amplifier’s low outputimpedance. (If the pole was placed outside thefeedback loop, an additional buffer would be requiredand would inadvertently increase noise and dc error).

Using RDIODE to represent the equivalent dioderesistance, and CTOT for equivalent diode capacitanceplus OPA381 input capacitance, the noise zero, fZ, iscalculated by:

fZ RDIODE RF

2RDIODERFCTOT CF

CFILTER= 3.9nF

RFILTER= 102kΩ

CF = 22pF

OPA381

RF = 50kΩ

OPA381

OPA381

RF = 50kΩ

RF = 50kΩ

CF = 16pF

VOUT

VBIAS

(b)

λ

CSTRAY = 0.2pF

VOUT

VBIAS

(a)

λ

CSTRAY = 0.2pF

VOUT

VBIAS

(c)

λ

CSTRAY = 0.2pF

Figure 6. Transimpedance Circuit Configurationswith Varying Total and Integrated Noise Gain

(3)

"#$%"#$


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12

120

100

80

60

40

20

0

−20

Frequency (Hz)

Tra

nsim

ped

anc

eG

ain

(dB

)

100 10k1k 1M 10M100k 100M

−3dB at 200kHz

See Figure 6aCDIODE = 10pF

See Figure 6c

See Figure 6b

Figure 7. Transimpedance Gains for Circuits inFigure 6

The effects of these circuit configurations on outputnoise are shown in Figure 8 and on integrated outputnoise in Figure 9. A 2-pole Butterworth filter (maximallyflat in passband) is created by selecting the filter valuesusing the equation:

CFRF 2CFILTERRFILTER

The circuit in Figure 6b rolls off at 20dB/decade. Thecircuit with the additional filter shown in Figure 6c rollsoff at 40dB/decade, resulting in improved noiseperformance.

400

300

200

100

0

Frequency (Hz)

Out

put

No

ise

(µV

/√H

z)

100 1k 10k 1M 10M100k 100M

See Figure 6a

See Figure 6b

See Figure 6c

CDIODE = 10pF

Figure 8. Output Noise for Circuits in Figure 6

500

400

300

200

100

0

Frequency (Hz)

Inte

grat

edO

utp

utN

ois

e(µ

Vrm

s)

100 10k1k 1M 10M100k 100M

CDIODE = 10pF

See Figure 6a

See Figure 6b

See Figure 6c

310µVrms

68µVrms

25µVrms

Figure 9. Integrated Output Noise for Circuits inFigure 6

Figure 10 shows the effects of diode capacitance onintegrated output noise, using the circuit in Figure 6c.

For additional information, refer to Noise Analysis ofFET Transimpedance Amplifiers (SBOA060), andNoise Analysis for High Speed Op Amps (SBOA066),available for download from the TI web site.

60

50

40

30

20

10

0

Frequency (Hz)

Inte

gra

ted

Ou

tput

Noi

se(µ

Vrm

s)

1 10010 10k1k 1M 10M100k 100M

See Figure 6c

CDIODE= 100pF

CDIODE= 50pF

CDIODE= 20pF

CDIODE= 1pF

CDIODE= 10pF

37µVrms

28µVrms

25µVrms

23µVrms

56µVrms

Figure 10. Integrated Output Noise for VariousValues of C DIODE for Circuit in Figure 6c

(4)

"#$%"#$


www.ti.com

13

BOARD LAYOUTMinimize photodiode capacitance and straycapacitance at the summing junction (inverting input).This capacitance causes the voltage noise of the opamp to be amplified (increasing amplification at highfrequency). Using a low-noise voltage source toreverse-bias a photodiode can significantly reduce itscapacitance. Smaller photodiodes have lowercapacitance. Use optics to concentrate light on a smallphotodiode.

Circuit board leakage can degrade the performance ofan otherwise well-designed amplifier. Clean the circuitboard carefully. A circuit board guard trace thatencircles the summing junction and is driven at thesame voltage can help control leakage. See Figure 11.

Guard ring

RF

VOUTOPA381

λ

Figure 11. Connection of Input Guard

OTHER WAYS TO MEASURE SMALLCURRENTSLogarithmic amplifiers are used to compress extremelywide dynamic range input currents to a much narrowerrange. Wide input dynamic ranges of 8 decades, or100pA to 10mA, can be accommodated for input to a12-bit ADC. (Suggested products: LOG101, LOG102,LOG104, LOG112.)

Extremely small currents can be accurately measuredby integrating currents on a capacitor. (Suggestedproduct: IVC102.)

Low-level currents can be converted to high-resolutiondata words. (Suggested product: DDC112.)

For further information on the range of productsavailable, search www.ti.com using the above specificmodel names or by using keywords transimpedanceand logarithmic.

CAPACITIVE LOAD AND STABILITYThe OPA381 series op amps can drive greater than100pF pure capacitive load. Increasing the gainenhances the amplifier’s ability to drive greatercapacitive loads. See the Phase Margin vs LoadCapacitance typical characteristic curve.

One method of improving capacitive load drive in theunity-gain configuration is to insert a 10Ω to 20Ωresistor inside the feedback loop, as shown inFigure 12. This reduces ringing with large capacitiveloads while maintaining DC accuracy.

OPA381 VOUT

VB(1)

V+

RF

RS20Ω

CF(3)

λ

NOTES: (1) VB = GND or pedestal voltage to reverse bias the photodiode.(2) VPD = GND or −5V.(3) CF x RF ≥ 2CL x RS.

CL RL

VPD(2)

V−

Figure 12. Series Resistor in Unity-Gain BufferConfiguration Improves Capacitive Load Drive

DRIVING 16-BIT ANALOG-TO-DIGITALCONVERTERS (ADC)

The OPA381 series is optimized for driving a 16-bit ADCsuch as the ADS8325. The OPA381 op amp buffers theconverter input capacitance and resulting chargeinjection while providing signal gain. Figure 13 showsthe OPA381 in a single-ended method of interfacing theADS8325 16-bit, 100kSPS ADC. For additionalinformation, refer to the ADS8325 data sheet.

"#$%"#$


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14

OPA381

RF

100Ω

1nF

ADS8325

CF

RC values shown are optimized for theADS8325 values may vary for other ADCs.

Figure 13. Driving 16-Bit ADCs

INVERTING AMPLIFIERIts excellent dc precision characteristics make theOPA381 also useful as an inverting amplifier. Figure 14shows it configured for use on a single-supply set to again of 10.

VOUT =

V+

OPA381

R1100kΩ

R210kΩ

VBIAS − x VIN

R2

R1

VBIAS

VIN

CF

Figure 14. Inverting Gain

PRECISION INTEGRATORWith its low offset voltage, the OPA381 is well-suited foruse as an integrator. Some applications require ameans to reset the integration. The circuit shown inFigure 15 uses a mechanical switch as the resetmechanism. The switch is opened at the beginning ofthe integration period. It is shown in the open position,which is the integration mode. With the values of R1 andC1 shown, the output changes −1V/s per volt of input.

OPA381 VOUT

V+

R11MΩ

SW1

VBIAS

VIN

C11µF

1µF

Figure 15. Precision Integrator

DFN (DRB) THERMALLY-ENHANCED PACKAGEOne of the package options for the OPA381 andOPA2381 is the DFN-8 package, a thermally-enhancedpackage designed to eliminate the use of bulky heatsinks and slugs traditionally used in thermal packages.The absence of external leads eliminates bent-leadconcerns and issues.

Although the power dissipation requirements of a givenapplication might not require a heat sink, for mechanicalreliability, the exposed power pad must be soldered tothe board and connected to V− (pin 4). This packagecan be easily mounted using standard PCB assemblytechniques. See Application Note SLUA271, QFN/SONPCB Attachment, located at www.ti.com. These DFNpackages have reliable solderability with either SnPb orPb-free solder paste.

PACKAGE OPTION ADDENDUM

www.ti.com 10-Jun-2014

Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status(1)

Package Type PackageDrawing

Pins PackageQty

Eco Plan(2)

Lead/Ball Finish(6)

MSL Peak Temp(3)

Op Temp (°C) Device Marking(4/5)

Samples

OPA2381AIDGKR ACTIVE VSSOP DGK 8 2500 Green (RoHS& no Sb/Br)

CU NIPDAUAG Level-2-260C-1 YEAR -40 to 125 A62

OPA2381AIDGKRG4 ACTIVE VSSOP DGK 8 2500 Green (RoHS& no Sb/Br)


OPA2381AIDGKT ACTIVE VSSOP DGK 8 250 Green (RoHS& no Sb/Br)


OPA2381AIDGKTG4 ACTIVE VSSOP DGK 8 250 Green (RoHS& no Sb/Br)


OPA2381AIDRBT ACTIVE SON DRB 8 250 Green (RoHS& no Sb/Br)

CU NIPDAU Level-2-260C-1 YEAR -40 to 125 A63

OPA2381AIDRBTG4 ACTIVE SON DRB 8 250 Green (RoHS& no Sb/Br)


OPA381AIDGKR ACTIVE VSSOP DGK 8 2500 Green (RoHS& no Sb/Br)


OPA381AIDGKT ACTIVE VSSOP DGK 8 250 Green (RoHS& no Sb/Br)


OPA381AIDGKTG4 ACTIVE VSSOP DGK 8 250 Green (RoHS& no Sb/Br)


OPA381AIDRBR ACTIVE SON DRB 8 3000 Green (RoHS& no Sb/Br)


OPA381AIDRBRG4 ACTIVE SON DRB 8 3000 Green (RoHS& no Sb/Br)


OPA381AIDRBT ACTIVE SON DRB 8 250 Green (RoHS& no Sb/Br)


OPA381AIDRBTG4 ACTIVE SON DRB 8 250 Green (RoHS& no Sb/Br)


(1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.

http://www.ti.com/product/OPA2381?CMP=conv-poasamples#samplebuy













PACKAGE OPTION ADDENDUM

www.ti.com 10-Jun-2014

Addendum-Page 2

(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availabilityinformation and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement thatlead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used betweenthe die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weightin homogeneous material)

(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuationof the previous line and the two combined represent the entire Device Marking for that device.

(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finishvalue exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on informationprovided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken andcontinues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

http://www.ti.com/productcontent

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device PackageType

PackageDrawing

Pins SPQ ReelDiameter

(mm)

ReelWidth

W1 (mm)

A0(mm)

B0(mm)

K0(mm)

P1(mm)

W(mm)

Pin1Quadrant

OPA2381AIDGKR VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

OPA2381AIDGKT VSSOP DGK 8 250 180.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

OPA2381AIDRBT SON DRB 8 250 180.0 12.4 3.3 3.3 1.1 8.0 12.0 Q2

OPA381AIDGKR VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

OPA381AIDGKT VSSOP DGK 8 250 180.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1

OPA381AIDRBR SON DRB 8 3000 330.0 12.4 3.3 3.3 1.1 8.0 12.0 Q2

OPA381AIDRBT SON DRB 8 250 180.0 12.4 3.3 3.3 1.1 8.0 12.0 Q2

PACKAGE MATERIALS INFORMATION

www.ti.com 25-Sep-2012

Pack Materials-Page 1

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

OPA2381AIDGKR VSSOP DGK 8 2500 367.0 367.0 35.0

OPA2381AIDGKT VSSOP DGK 8 250 210.0 185.0 35.0

OPA2381AIDRBT SON DRB 8 250 210.0 185.0 35.0

OPA381AIDGKR VSSOP DGK 8 2500 367.0 367.0 35.0

OPA381AIDGKT VSSOP DGK 8 250 210.0 185.0 35.0

OPA381AIDRBR SON DRB 8 3000 367.0 367.0 35.0

OPA381AIDRBT SON DRB 8 250 210.0 185.0 35.0

PACKAGE MATERIALS INFORMATION

www.ti.com 25-Sep-2012

Pack Materials-Page 2

www.ti.com

PACKAGE OUTLINE

C

8X 0.350.25

2.4 0.052X

1.95

1.65 0.05

6X 0.65

1 MAX

8X 0.50.3

0.050.00

A 3.12.9

B

3.12.9

(0.2) TYP

VSON - 1 mm max heightDRB0008BPLASTIC SMALL OUTLINE - NO LEAD

4218876/A 12/2017

PIN 1 INDEX AREA

SEATING PLANE

0.08 C

1

4 5

8

(OPTIONAL)PIN 1 ID 0.1 C A B

0.05 C

THERMAL PADEXPOSED

NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.

SCALE 4.000

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EXAMPLE BOARD LAYOUT

0.07 MINALL AROUND

0.07 MAXALL AROUND

8X (0.3)

(2.4)

(2.8)

6X (0.65)

(1.65)

( 0.2) VIATYP

(0.575)

(0.95)

8X (0.6)

(R0.05) TYP


4218876/A 12/2017

SYMM

1

45

8

LAND PATTERN EXAMPLESCALE:20X

NOTES: (continued) 4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature number SLUA271 (www.ti.com/lit/slua271).5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown on this view. It is recommended that vias under paste be filled, plugged or tented.

SOLDER MASKOPENINGSOLDER MASK

METAL UNDER

SOLDER MASKDEFINED

METALSOLDER MASKOPENING

SOLDER MASK DETAILS

NON SOLDER MASKDEFINED

(PREFERRED)

www.ti.com

EXAMPLE STENCIL DESIGN

(R0.05) TYP

8X (0.3)

8X (0.6)

(1.47)

(1.06)

(2.8)

(0.63)

6X (0.65)


4218876/A 12/2017

NOTES: (continued) 6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations.

SOLDER PASTE EXAMPLEBASED ON 0.125 mm THICK STENCIL

EXPOSED PAD

81% PRINTED SOLDER COVERAGE BY AREASCALE:25X

SYMM

1

4 5

8

METALTYP

SYMM

IMPORTANT NOTICE

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