annual meeting navitas semiconductor allgan power ics ... · company logo december 8 2015 1 annual...
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Company Logo
December 8 2015
1
Annual Meeting
Navitas SemiconductorAllGanTM Power ICs
Power Systems Go “GaN Fast”
January 17-19, 2017
Fastest, most efficient
GaN Power FETs
Creating the World’s First AllGaN™ Power ICs
2
First & FastestIntegrated GaN Gate
Driver
World’s FirstAllGaN™ Power IC
Up to 40MHz switching, 4x higher density & 20% lower system cost
GaN Power IC: Hi-Speed FET, Drivers & More• Proprietary AllGaN™ technology• Monolithic integration of GaN FET, GaN Driver, GaN Logic• 650 V eMode• 20x lower drive loss than silicon (<35 mW at 1 MHz)• Driver impedance matched to power device• Very fast (prop delay and turn-on/off of 10-20 ns)• Zero inductance turn-off loop• High dV/dt immunity (200 V/ns) with control• Digital input• Complete layout flexibility
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QFN 5x6mm
D. Kinzer, S. Oliver “Monolithic HV GaN Power ICs” in IEEE PELS Power Electronics Magazine, vol. 3, no. 3, pp. 14-21, September 2016
Speed & Integration à Eliminate Turn-off Losses
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Load Current (A)
External drivers–Significant turn-off losses–Just 1-2 nH of gate loop
inductance can cause voltage spikes that create unintended turn-on of the GaN FET
–Adding a gate resistor reduces spikes but slows down the circuit creating additional losses
Integrated GaN drivers (iDrive™)
–Eliminate the problem–Negligible turn-off losses
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 1 2 3 4 5 6 7 8 9 10
Externaldriver,noRg
Externaldriver+1Ω
Externaldriver+2Ω
Externaldriver+4Ω
Integrateddriver,noRg
Turn
-off
Loss
(μJ)
GaN Power IC – Fast & Efficient
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• 500 V Switching• No overshoot / spike • No oscillations• ‘S-curve’ transitions• Zero Loss Turn-on• Zero Loss Turn-off• Sync Rectification• High frequency • Small, low cost
magnetics
ZVS soft switching
200ns/div
VGS of Low Side FET
VDS of Low Side FET1 MHz ZVS
Zero Loss Turn-off
High Side Sync Rect
Low Side Sync Rect
Fast Chargers ... going “GaN Fast”3x Fast Charging with 50% Energy Savings
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Existing Si-based 15W
100 kHzUp to 6.5 W/in3
88%
Smartphones & Tablets
Fast-charging Drones
AR / VR & Wearables
AllGaN™ 201625W
300-500 kHz11 W/in3
>92%
2x Faster Charging
>1 MHz17.5 W/in3
>95%
AllGaN™ 201725W
3x Faster Charging
2016: Navitas; 2017: Xiucheng Huang, "High Frequency GaN Characterization and Design Considerations," Ph.D Dissertation, Dept. Electr. Eng., Virginia Tech., Blacksburg, VA, USA, 2016.
25W 5W
45W Active Clamp Flyback
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• 94.5% efficient at 220V – 94.2% at 120VAC, 93.1% at 90VAC
• 23.7 W/in3 density (uncased)• 15.7mm profile
15.7mm
For further details of ACF, please see APEC 2017 technical paper “Active Clamp Flyback Using GaN Power IC for Power Adapter Applications”, Xue, Zhang
Frequency Drives Size: Transformer (65 W)
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Frequency(kHz)
Vol(mm3)
100 200 300 1000
RM10
~ EQ25
RM7
ER23
12,000
6,000
4,000
2,000
Chrome book
Innergie
FINsix
CPES
8,000
10,000
AC-RF: Efficient Wireless Power
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AC
6.78 MHz Output
EMI
47-63 HzAC
Input
70%
75%
80%
85%
90%
95%
10 20 30 40 50 60
EFFI
CIE
NC
Y
OUTPUT POWER [W]
110VAC-Coil
Constant output currentvs. load reactance
650V Navitas eMode GaN at 27MHz & 40MHz
10
Class Phi-2 DC/AC converter:
Technology V Pack(mm)
FSW(MHz)
Eff.(%)
Power(W)
RF Si (ARF521) 500 M17422x22 27.12 91% 150
eMode GaN 650 QFN5x6
27.12 96% 150
40.00 93% 115
• 50% less loss than RF Si• 16x smaller package• Air-core inductors• Minimal FET loss• Negligible gate drive loss
20ns/div, 150V/div
27.12MHz, φ2 Inverter, VDS of GaN
A Hi-Speed Disruption in Power...
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Pow
er D
ensi
ty (W
/in3 )
40% efficiency
1975 1985 2015 20250.1
1
10
100
2x Energy Savings
3x Lower $/W
2x Energy Savings
3x Lower $/W
Linear Regulators Switching
RegulatorsLF Switching
RegulatorsHF Switching
Regulators
80% efficiency
90% efficiency
95-99% efficiency