2sj 598 power mos dell 2407wfpb

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MOS FIELD EFFECT TRANSISTOR

2SJ598SWITCHING

P-CHANNEL POWER MOS FET

DATA SHEET

Document No. D14656EJ4V0DS00 (4th edition) Date Published August 2004 NS CP(K) Printed in Japan

2000, 2001

The mark shows major revised points.

DESCRIPTION The 2SJ598 is P-channel MOS Field Effect Transistor designed

for solenoid, motor and lamp driver.

FEATURES • Low on-state resistance:

RDS(on)1 = 130 mΩ MAX. (VGS = –10 V, ID = –6 A)

RDS(on)2 = 190 mΩ MAX. (VGS = –4.0 V, ID = –6 A)

• Low Ciss: Ciss = 720 pF TYP.

• Built-in gate protection diode

• TO-251/TO-252 package

ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS –60 V

Gate to Source Voltage (VDS = 0 V) VGSS m20 V

Drain Current (DC) (TC = 25°C) ID(DC) m12 A Drain Current (pulse) Note1 ID(pulse) m30 A

Total Power Dissipation (TC = 25°C) PT 23 W

Total Power Dissipation (TA = 25°C) PT 1.0 W

Channel Temperature Tch 150 °C

Storage Temperature Tstg –55 to +150 °C Single Avalanche Current Note2 IAS –12 A Single Avalanche Energy Note2 EAS 14.4 mJ Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Starting Tch = 25°C, VDD = –30 V, RG = 25 Ω, VGS = –20 → 0 V

ORDERING INFORMATION PART NUMBER PACKAGE

2SJ598 TO-251 (MP-3)

2SJ598-Z TO-252 (MP-3Z)

(TO-251)

(TO-252)

Data Sheet D14656EJ4V0DS 2

2SJ598

ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Zero Gate Voltage Drain Current IDSS VDS = –60 V, VGS = 0 V –10 µA

Gate Leakage Current IGSS VGS = m16 V, VDS = 0 V m10 µA

Gate Cut-off Voltage VGS(off) VDS = –10 V, ID = –1 mA –1.5 –2.0 –2.5 V

Forward Transfer Admittance | yfs | VDS = –10 V, ID = –6 A 5 11 S

Drain to Source On-state Resistance RDS(on)1 VGS = –10 V, ID = –6 A 102 130 mΩ

RDS(on)2 VGS = –4.0 V, ID = –6 A 131 190 mΩ

Input Capacitance Ciss VDS = –10 V 720 pF

Output Capacitance Coss VGS = 0 V 150 pF

Reverse Transfer Capacitance Crss f = 1 MHz 50 pF

Turn-on Delay Time td(on) ID = –6 A 7 ns

Rise Time tr VGS = –10 V 4 ns

Turn-off Delay Time td(off) VDD = –30 V 35 ns

Fall Time tf RG = 0 Ω 10 ns

Total Gate Charge QG ID = –12 A 15 nC

Gate to Source Charge QGS VDD= –48 V 3 nC

Gate to Drain Charge QGD VGS = –10 V 4 nC

Body Diode Forward Voltage VF(S-D) IF = 12 A, VGS = 0 V 0.98 V

Reverse Recovery Time trr IF = 12 A, VGS = 0 V 50 ns

Reverse Recovery Charge Qrr di/dt = 100 A /µs 100 nC

TEST CIRCUIT 1 AVALANCHE CAPABILITY

RG = 25 Ω

50 Ω

L

VDD

VGS = −20 → 0 V

BVDSSIAS

IDVDS

Starting Tch

VDD

D.U.T.

TEST CIRCUIT 3 GATE CHARGE

TEST CIRCUIT 2 SWITCHING TIME

PG.RG

0VGS(−)

D.U.T.

RL

VDD

τ = 1 sµDuty Cycle ≤ 1%

VGSWave Form

VDSWave Form

VGS(−)

10%90%VGS

10%0

VDS(−)

90%90%

td(on) tr td(off) t f

10%

τ

VDS

0

ton toff

PG.

PG.

50 Ω

D.U.T.

RL

VDD

IG = −2 mA

−


2SJ598

TYPICAL CHARACTERISTICS (TA = 25°C)

TC - Case Temperature - ˚C

PT

- T

otal

Pow

er D

issi

patio

n -

W

0 8020 40 60 100 140120 160

TOTAL POWER DISSIPATION vs. CASE TEMPERATURE

30

25

20

15

10

5

0

FORWARD BIAS SAFE OPERATING AREA

ID -

Dra

in C

urr

en

t -

A

VDS - Drain to Source Voltage - V

–1

–10

–100

–0.1 –1 –10

TC = 25˚CSingle Pulse

–0.1–100

Power Dissipation

LimitedRDS(on) Li

mited ID(DC)

ID(pulse) PW = 10 µs100 µs

1 ms10 msDC

DERATING FACTOR OF FORWARD BIASSAFE OPERATING AREA

TC - Case Temperature - ˚C

dT -

Per

cent

age

of R

ated

Pow

er -

%

0 4020 60 100 14080 120 160

100

80

60

40

20

0

PW - Pulse Width - s

TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH

rth(t

) - T

rans

ient

The

rmal

Res

ista

nce

- ˚C

/W

10

0.01

0.1

1

100

1000

1 m 10 m 100 m 1 10 100 1000

Single Pulse

10 100

Rth(ch-C) = 5.43˚C/W

µ µ

Rth(ch-A) = 125˚C/W


2SJ598

DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE

VGS - Gate to Source Voltage - VRD

S(o

n) -

D

rain

to S

ourc

e O

n-s

tate

Resi

stance

- m

Ω

0 –5 –10 –15 –20

Pulsed200

150

100

50

0

ID = –6 A

FORWARD TRANSFER CHARACTERISTICS

VGS - Gate to Source Voltage - V

ID -

D

rain

Cu

rre

nt

- A

Pulsed

–1 –2 –3 –4 –5

VDS = –10 V

–10

–1

–0.1

–100

TA = −55˚C25˚C75˚C

150˚C

–0.01

DRAIN TO SOURCE ON-STATERESISTANCE vs. DRAIN CURRENT

ID - Drain Current - ARD

S(o

n) -

D

rain

to S

ourc

e O

n-s

tate

Resi

stance

- m

Ω

–1–0.1

300

200

100

0–10 –100

Pulsed

VGS = –4.0 V–4.5 V–10 V

DRAIN CURRENT vs.DRAIN TO SOURCE VOLTAGE


ID -

D

rain

Cu

rre

nt

- A

0 –4 –6 –8

–50

–40

–30

–20

–10

0 –2

Pulsed

VGS = –10 V

–10

–4.0 V

FORWARD TRANSFER ADMITTANCE vs.DRAIN CURRENT

ID - Drain Current - A

| yf

s |

- F

orw

ard

Tra

nsf

er

Ad

mitt

an

ce

- S

–0.01 –0.1 –1

10

100

–10 –100

0.1

1

PulsedVDS = –10 V

TA = 150˚C 75˚C 25˚C −50˚C

0.01

GATE CUT-OFF VOLTAGE vs.CHANNEL TEMPERATURE

Tch - Channel Temperature - ˚C

VG

S(o

ff)

- G

ate

Cu

t-o

ff V

olta

ge

-

V

VDS = –10 VID = –1 mA

–1.0

–2.0

–3.0

–50 0 50 1000

150

–4.0


2SJ598

DRAIN TO SOURCE ON-STATE RESISTANCE vs.CHANNEL TEMPERATURE

Tch - Channel Temperature - ˚C RD

S(o

n) -

D

rain

to S

ourc

e O

n-s

tate

Resi

stance

- m

Ω

−50 0 50 100 150

ID = –6 A

300

250

200

150

100

50

0

–10 V

VGS = –4.0 V

Pulsed

SOURCE TO DRAIN DIODE FORWARD VOLTAGE

–1.0

ISD -

Dio

de F

orw

ard

Cur

rent

- A

0 –1.5

VSD - Source to Drain Voltage - V

–0.5

Pulsed

–0.01

–0.1

–1

–10

–100

0 V

VGS = –10 V

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

VG

S -

Gate

to S

ourc

e V

olta

ge -

V

QG - Gate Charge - nC

VD

S -

D

rain

to S

ourc

e V

olta

ge -

V

0 4 62 8 10 12 14 16

–60

–50

–40

–30

–20

–10

0

VDS

VGSVDD = –48 V

–30 V–12 V

ID = –12 A–12

–10

–8

–6

–4

–2

0

REVERSE RECOVERY TIME vs.DRAIN CURRENT

IF - Drain Current - A

trr

- R

eve

rse

Re

cove

ry T

ime

-

ns

di/dt = 100 A/ s VGS = 0 V

10.1

10

1 10 100

1000

100

µ

CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE


Cis

s, C

oss

, C

rss

- C

apaci

tance

- p

F

10

100

1000

10000

–0.1 –1 –10

VGS = 0 Vf = 1 MHz

Coss

Crss

Ciss

–100

SWITCHING CHARACTERISTICS

ID - Drain Current - A

td(o

n),

tr, t

d(o

ff),

tf -

Sw

itchin

g T

ime -

ns

10

1–1–0.1

100

1000

–10 –100

tf

tr

td(on)

td(off)

VDD = –30 VRG = 0 ΩVGS = –10 V


2SJ598

SINGLE AVALANCHE ENERGYDERATING FACTOR

Starting Tch - Starting Channel Temperature - ˚C

Energ

y D

era

ting F

act

or

- %

25 50 75 100

160

140

120

100

80

60

40

20

0125 150

VDD = –30 VRG = 25 ΩVGS = –20 → 0 VIAS ≤ –12 A

SINGLE AVALANCHE CURRENT vs.INDUCTIVE LOAD

L - Inductive Load - H

IAS -

Sin

gle

Ava

lan

che

Cu

rre

nt

- A

–1

–10

–100

1 m 10 m

VDD = –30 VRG = 25 ΩVGS = –20 → 0 V

IAS = –12 A

10µ 100µ–0.1

EAS = 14.4 mJ


2SJ598

PACKAGE DRAWINGS (Unit: mm)

1) TO-251 (MP-3) 2) TO-252 (MP-3Z)

1. Gate2. Drain3. Source4. Fin (Drain)

21 3

6.5 ±0.2

5.0 ±0.2

41.

5 −0

.1+

0.2

5.5

±0.

27.

0 M

IN.

13.7

MIN

.

2.32.3

0.75

0.5 ±0.1

2.3 ±0.2

1.6

±0.

2

1.1 ±0.2

0.5 −0.1+0.2 0.5 −0.1

+0.2

1. Gate2. Drain3. Source4. Fin (Drain)

1 2 3

4

6.5 ±0.2

5.0 ±0.2

4.3

MA

X.

0.8

2.3 2.3

0.9MAX.

5.5

±0.2

10.0

MA

X.

2.0

MIN

.1.

5 −0

.1+

0.2

2.3 ±0.2

0.5 ±0.1

0.8MAX.

0.8

1.0

MIN

.1.

8TY

P.

0.7

1.1 ±0.2

EQUIVALENT CIRCUIT

Source

BodyDiode

GateProtectionDiode

Gate

Drain

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage exceeding

the rated voltage may be applied to this device.

2SJ598

The information in this document is current as of August, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document.NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information.While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features.NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio

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M8E 02. 11-1

2sj 598 power mos dell 2407wfpb

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