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The top documents of yanwen-zhang
Henrycinols A and B, Two Novel Indole Alkaloids Isolated from Melodinus henryiCraib
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Electronic stopping powers for heavy ions in silicon
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Formation of thin surface films of Ni-, V- and Co-silicide by low-energy implantation with a metal vapour vacuum arc ion source
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Sputtering transients for some transition elements during high-fluence MEVVA implantation of Si
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Annealing behaviour of foreign atom incorporated Co-silicides formed by MEVVA implantation into SiO2/Si and Si3N4/Si structures
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High-precision measurement of electronic stopping powers for heavy ions using high-resolution time-of-flight spectrometry
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Measurements of the mean energy-loss of swift heavy ions in carbon with high precision
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Response of Si p-i-n diode and Au/n-Si surface barrier detector to heavy ions
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Evolution and recrystallization of buried amorphous layers in Al22+ implanted 4H-SiC
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Electronic stopping power of swift heavy ions in carbon
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Mass and energy dispersive elastic recoil detection studies of low temperature Si/Pd/GaAs and Si/Pd/AlxGa(1 − x)As interfacial reactions
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Foreign atom incorporation during metal silicide formation by ion beam synthesis
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Detection efficiency of time-of-flight energy elastic recoil detection analysis systems
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The effect of stoichiometric disturbance on activation of MeV Si implantation in GaAs
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The response and calibration of thin Si ΔE detectors
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High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si: Part I: formation of thin silicide surface films
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Characterisation of ferromagnetic magnetic storage media surfaces by complementary particle induced X-ray analysis and time of flight-energy dispersive elastic recoil detection analysis
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High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si: Part II: sputtering yield transients, the approach to high-fluence equilibrium
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Influence of heavy ion irradiation damage on silicon charged particle detector calibration
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High-fluence Co implantation in Si, SiO2/Si and Si3N4/Si: Part III: heavy-fluence Co bombardment induced surface topography development
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