semiconductor & optical metrology solution©sentation... · 2015-12-19 · semiconductor &...

SEMICONDUCTOR & OPTICAL

METROLOGY SOLUTION

Company Products Applications Organisation Technologies R&D Road map 3D IC customers


METROLOGY SOLUTION


Goal

FOGALE nanotech provides standard and customized

systems well suited to new metrology requirements for

MEMS and semiconductor applications


METROLOGY SOLUTION


4 patents /year

Installed base for optics, MEMS and semiconductor > 400 units

Web site: www.fogale-semicon.com

Turnover: 8M€

Staff: 47 (Headquarter)

World-class specialist for conception and manufacturing of

non-contact dimensional metrology systems

Capacitive, eddy currents and optical technologies

Engineering and studies

Conception and manufacturing of standard products

Founded 1983, spin-off of a French national research laboratory: CEA & ONERA

http://www.fogale-semicon.com/




METROLOGY SOLUTION


Compagny organization

FOGALE Headquarter: 47 employees: 80% are scientists & engineers

Optical

&

semiconductor

Touchless

HMI

System for

Bioprocess

key technologies: Capacitive, Interferometry, optics and Inductive


METROLOGY SOLUTION


FOGALE Nanotech

•Hardware development

•Software development

•Integration

•Tool development (Beta)

•Automation

•New applications/market

analysis & potential

solutions review

R&D

Applications

Technology Beta tools &

upgrades

Applications/technologies

Common lab in Orsay:

IEF/FOGALE

Research

FOGALE Headquarter

NIMES Application Lab

Aix en Provence

Manufacturing

Toulouse

ORGANIZATION

Subsidiaries:

FOGALE Inc.

Boston USA

FOGALE Asia

Tainan Taiwan


METROLOGY SOLUTION


FOGALE

DISTRIBUTORS & FIELD SERVICE

WORLDWIDE Network

FOGALE ASIA

Taipei

Tainan: Field Service

FOGALE nanotech France Headquarter

Ville Active – Acti +

125, Rue de l’Hostellerie

30900 NIMES

FOGALE nanotech Inc.

Main Office:

1714, Lombard Street

San Francisco, CA 94123

Tel: 818 206 8525

Fax: 818 518 1085

Dean Turnbaugh NVT VTC

Engineering: Boston Mass.

South East Asia

India

APP System

China

First Technology China

Korea

Jung Wong Corporation Japan

APPEX Corporation


METROLOGY SOLUTION


Semicon market

3D integration: Stacking of multiple chips on top of each

other within a single semiconductor package

MEMS: Micro Electro Mechanical System

Substrate dimensional control

TTV, bow, warp and surface topography


METROLOGY SOLUTION


R&D Labs

Technology center, pilot lines & MEMS medium size facilities

Large size facilities

PRODUCTS: FROM LAB TO FABS


METROLOGY SOLUTION


DEEPROBE

Qualified and certified by IMEC

Technology Low coherence IR interferometry for step height measurement

(Patented)

Applications High A/R TSV depth measurement for 200 and 300 mm wafer

(Via first & middle)

Benefits Non destructive technology

Fast and easy to use

CCD camera for spot positioning and pattern recognition

Adjustable metrology spot size

TSV diameter > 2 µm A:R up to 30

Calibration and maintenance free


METROLOGY SOLUTION


T-MAP

Technology Optical Metrology: single or dual sensor configuration

Multi sensor configuration

IR and/or White Light

Applications Substrate Thickness, TTV, bow and warpage

Wafer on temporary carrier: inspection & metrology

Multi layer substrates

Thickness, TTV of mono and SOI wafers: Si,III-V, InP, Sapphire, Glass, Pyrex, Polymers, CdTe, etc

Microscopy and pattern recognition for measurement on product wafers

Surface profiling

Benefits Microscopy and pattern recognition for measurement on product wafer.

Multiple sensor configuration depending on applications.

Refractive index calculation in DUAL configuration mode

Signal quality factor calculation


METROLOGY SOLUTION


T-MAP MEMSCAN

Technology IR transmission microscopy for inspection and metrology spot positioning (Patented)

Low Coherence IR interferometry

Confocal Chromatic (optional)

Applications Visual Inspection and defect detection by IR microscopy

Profiling and high A:R trench/Via depth measurement.

Membrane thickness mapping

SU8 resist thickness

Detection of membrane non planarity after wafer level packaging

MEMS WLP applications

IR bonded alignment control

Benefits Inspection and metrology performed in one shot with one tool: unique on the market

Tool configuration entirely designed for MEMS applications

Edge contact

vacuum chuck


METROLOGY SOLUTION


T-MAP DUAL 3D

Unique solutions for R&D and pilot lines

3D IC TSV

FEOL

Transistor manufaturing

TSV formation

Through Silicon Vias

BEOL

Transistors interconnection

Wafer Thinning Backside processing and

Die stacking PROCESS FLOW:

FOGALE Solutions:

Std process New process

TSV depth

measurement

Thickness & Bonding inspection

copper nails dimensional control & die stacking process control


METROLOGY SOLUTION


3D PROFILER

3D Profilers and MEMS Solution The Optical 3D surface topography is performed by optical interferometry with vertical resolution down to 0.1

nm. All kind of materials can be measured (from 1% to 100% reflectance)..

Technology Full field White light interferometer: z-scan and phase shifting mode

Stroboscopic full field phase and amplitude vibration measurement

Phase shifting measurement for small step height and nanometer level roughness measurement

Applications Bumps process control

Surface topography

MEMS in motion analysis: in-plane and out-of-plane

Analysis under controlled atmosphere (vacuum, temperature or pressure)

Membrane shape

Benefits Sub-nanometer resolution

Fast results

System stability


METROLOGY SOLUTION


In collaboration since 10 years

Competences Micro and NanoSystems. Focused on innovative micro and nano electromechanical or

electromagnetic devices Strong competences allow the study and realization of test

microdevices, microsensors and MEMS/NEMS in different technologies.

Means Metrology platform and micro & nano technologies center MINERVE: MEMS fab facility, and

Metrology & instrumentation laboratory.

Lab team FOGALE: 2 R&D Engineer

IEF: 4 scientists, 2 Phd, 1 Technicien

Goal Development of new and advanced technologies for killer applications.

Common lab FOGALE/IEF

The Institute of Fundamental Electronic

White Light interferometry

MEMS in motion analysis

Environmental chamber for MEMS analysis

Long working distance interferometric objectives

Wafer Level Packaging

Hermiticity

Contacts: Alain Bosseboeuf

Gilles Fresquet/ Philippe Coste


METROLOGY SOLUTION


Market: MEMS

Killer applications: wireless, smart phones,

medical, industrial, imagers, defense, automotive …

MEMS products: accelerometers, resonnators,

Pressure sensors, bioMEMS, micromirors…

FOGALE Solutions: Development of new sensors, wafer level packaging of MEMS and MEMS

above CMOS require advance metrology products. MEMS manufacturers require multiple

functions in one tool.

FOGALE offers such solution: The MEMSCAN

Membrane Thickness Membrane shape and inspection

After WLP MEMS above CMOS inspection IR microscopy


METROLOGY SOLUTION


FOGALE MEMS Process control versatile solutions

Membrane thickness mapping (IR interferometry)

Out of the Plane registration (Moire)

Bonding process control (IR microscopy, IR interferometry, Confocal chromatic)

Through Si cap membrane shape (IR microscroscopy + IR interferometry)

Long distance (few cm) CD measurement (Pattern rec, High precision stage

displacement)

High A/R cavity depth and top CD measurement (patented IR method)

Surface profiling (Confocal chromatic or WLI)

MEMS in motion analysis (WLI with stroboscopic illumination)

Measurement under controlled atmosphere (P, Vacuum, T°c…)

IR inspection

Customized solutions


METROLOGY SOLUTION


3D Surface Profiling: Full Field White Light Interferometer

Objective

Step height, 3D metrology and Roughness

Z-scan

A

B

h

For step height > 500 nm z-scanning

Accuracy: 1 to 10nm

For step height < 500 nm Phase shifting

Accuracy: 0.1nm

Example: Pilar height measurement


METROLOGY SOLUTION


1) 3D Surface Profiling: Full Field White Light Interferometer

Some Results

PZT Membrane Copper RDL

Top and bottom CD of a line

3D measurement of interconnect metal layer Micro accelerometer


METROLOGY SOLUTION


1) 3D Surface Profiling: Full Field White Light Interferometer

Film Thickness measurement and buried surface 3D profiling

ng x d

film (ng)

Substrat

d

Sample

650 µm

~4 µm

Objective

A

Example: 3D Profile through 120µm Thick layer

Surface Buried layer


METROLOGY SOLUTION


1) 3D Surface Profiling: Confocal Chromatic technology

Spectrometer

Light source

Control unit

Probe

Object surface Measurement range

Optical fiber

FPGA Calculator

Single point method: no z-scan required due to multi confocal points

x,y scan only


METROLOGY SOLUTION


1) 3D Surface Profiling: Confocal Chromatic technology

Low cost solution for high speed surface profiling:

Step height

Full scanning across the entire wafer diameter

Bump height and co-planarity

Capability to measure surface shape at the same time.

Accuracy down to 10nm depending on sensor measurement range

Speed: Up to 2KHz

Example:

Trench depth and profile across a wafer diameter and substrate flatness: 10000 data points obtained in 30 seconds


METROLOGY SOLUTION


2) MEMS in motion metrology

CCD

Camera

Sample

Objective

Reference

mirror

Beam

splitterStroboscopic

Light source

Beam splitter

Mirau

Interferometric

Objective

Tube

lens

Image

processing

Interferogram

analysis

In-plane

motion

Out-of-plane

motion

CCD

Camera

Sample

Objective

Reference

mirror

Beam

splitterStroboscopic

Light source

Beam splitter

Mirau

Interferometric

Objective

Tube

lens

Image

processing

Interferogram

analysis

In-plane

motion

Out-of-plane

motion

Fringes


METROLOGY SOLUTION


2) MEMS in motion metrology

Thermally actuated silicone membrane (courtesy Barcelone University)

Phase shifting stroboscopic interferometry

Test device with out of plane actuation

Test device with in plane electrostatic actuation

Electrostatic actuation study


METROLOGY SOLUTION


3D and Wafer Level Packaging process control

Wafer Level Packaging: IR Inspection and metrology after bonding


METROLOGY SOLUTION



Wafer Bonding: Thickness and TTV of individual wafer of a stack

IR microscopy combined with IR interferometry allowed to detect voids at the interfaces and to measure all layers

Bow/Warp measured at the same time than TTV

Layer Bow (um) Warp (um) Average

Thickness (um)

TTV (um)

All -328.706 375.119 1509.816 13.865

Si 779.947 <1um

Glue + Glass 729.869 14.858

Full wafer surface inspection Courtesy of Nanda Tec

Bow/ warp Glue + Glass TTV

Bonding deffects


METROLOGY SOLUTION



28 to 29

µm

Spot positioning

6.92 µm

Spot positioning

4 to 8 µm

3D TSV: Metrology to adjust TSV release for 3D stack


METROLOGY SOLUTION


Demo: Copper Pillar height and co planarity after TSV reveal

Measurement location within a die

IR microscopy with T-MAP Measurement position

Confidential

Courtesy of SEMATECH


METROLOGY SOLUTION


Copper nails height and co-planarity within a die

Mean plane D

Note: Co planarity within a field of view <<100nm

Confidential


METROLOGY SOLUTION


Copper nails height within a wafer

Mean: 3.172 µm Sigma: 0.36µm

Max: 4.040µm Min: 2.109 µm (center of wafer)

Confidential

Courtesy of SEMATECH


METROLOGY SOLUTION


Some customers…..

or more information, contact:

http://www.imt.ro/

http://www.imt.ro/

http://www.3-5lab.fr/index.htm

http://www.spil.com.tw/

http://www.facebook.com/samsungfrance

http://www.facebook.com/samsungfrance

semiconductor & optical metrology solution©sentation... · 2015-12-19 · semiconductor &...

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