consortium for metrology of semiconductor nanodefects mechanical engineering consortium for...

Consortium for Metrologyof Semiconductor Nanodefects

MechanicalEngineering


Semi-Annual Research Review

20-21 July 2000



Highlights (1999-2000)

5 active graduate students, 4 undergrads Michael Jordan and Ping Ding receive Ph.D. DDSURF continued development,

Technology Transfer Workshop IV Film capability added to DDSURF 5 Technical Papers SRC Project on Hybrid-Emission Defect

Instrument Funded ($100k/yr for 3 years)



Tracking Consortium Graduates

Warner, Tom M.S. Particle ID by Scattering Intel

Starr, Greg Ph.D. Patterned Wafer Inspection Intel

Edwards, Ryan B.S. Standards VLSI Standards, Three-Five Sys.

Bionda, Pierre M.S. Via Inspection Bio-tech – neuron detection

Suresh, L. Post-doc Visible, EUV Scattering KLA-Tencor

Jordan, Michael Ph.D. (1/00) Bulk Si Defects Motorola

Ding, Ping Ph.D. (5/00) CMP Defect Detection Applied Materials

Hager, Jack M.S. (5/00) Epi Defect Characterization Intel

Nebeker, Brent Ph.D. (5/00 Computational Scattering Applied Materials (Internship)

Valencia, Amado M.S. (8/00) Particles on Films Intel

Buckner, Ben Ph.D. (12/00) Hybrid DUV Inspection AMD, Tencor (Internships)

Hafiz, Feras M.S. (12/00) Contamination in Litho Tools SEMATECH (Internship)

Zhang, Haiping Ph.D. (5/01) Epi-Si Defect Detection Applied Materials (Internship)



Member Organizations

ADE/ADE Optical

AMD

Applied Materials

Duke Scientific

Inspex/Hamamatsu

KLA-Tencor

*cumulative 1996-2000, current members are boldface

Lawrence Livermore Labs

OSI Inc.

Intel

SEMATECH

Sumitomo Sitix

VLSI Standards



Recently Completed Projects

Silicon Defects and Optical Wafer Inspection Systems

Scatterometer Enhancements

Light Scattering by Particles/Defects on CMP Wafers



Silicon Defects and Optical Wafer Inspection Systems

Process for Fabrication of Standard Pyramidal Pits in Si

Artifacts Fabricated, Characterized, and Used in Scattering Experiments

Scattering Model Comparison



Pyramidal Pit (0.53 µm) in Si



In-plane, Differential Scatter of Pyramidal Pits in Si

s-polarizationincidence angle 65°wavelength 0.6328 µm

scattering angle (degrees)

DS

C(µ

m²/

sr)

-90 -60 -30 0 30 60 9010-3

10-2

10-1

100

0.76 µm

0.69 µm

0.63 µm

0.51 µm

0.41 µm

0.35 µm

Frame 001 09 Jan 2000 Differential scatter of pyramidal pits, 65° incidence, s-polarizationFrame 001 09 Jan 2000 Differential scatter of pyramidal pits, 65° incidence, s-polarization



In-plane, Differential Scatter of0.34 m Pyramidal Pit in Si

s-polarizationincidence angle 65°wavelength 0.6328 µm

scattering angle (degrees)

DS

C(µ

m²/

sr)

-90 -60 -30 0 30 60 9010-3

10-2

10-1

100

101

measuredcalculated

Frame 001 08 Jan 2000 Differential scatter of a 0.35 µm pyramidal pit, 65° incidence, s-polarizationFrame 001 08 Jan 2000 Differential scatter of a 0.35 µm pyramidal pit, 65° incidence, s-polarization



Scatterometer Enhancement

New visible wavelength scatterometer designed, built, and tested

Provides BRDF measurement capability

Competitive specs

Used in thesis projects



Light Scattering by Particles/Defects on CMP Wafers

Identified and defined critical CMP defects

Acquired standard defect samples

Dishing correlation as function of materials

Angle-resolved scattering measurements of roughness, patterns, and particles

Experimental results in reasonable agreement with models



Dishing: Material and Geometry (Pitch) Dependence

W SiO2Modulus of elasticity:Em(W)=59e-6 lb/in2

Em(Cu)=17e-6 lb/in2

Dishing:at L=10 m and PD=1/2D(W)=71.4 nmD(Cu)=144 nm

Cu SiO2

10-1 100 101 102

Linewidth (m)

0

50

100

150

200

250

300

Dis

hin

g(n

m)

PD=1/2

PD=1/3



Natural Scratch and Artifact

v-shape, 1.3 v-shape, 1.3 m m wide, 4.7 nm wide, 4.7 nm deep scratch on deep scratch on SiOSiO22

v-shape, 0.85 v-shape, 0.85 m m wide, 95 nm deep wide, 95 nm deep scratch on SiOscratch on SiO2 2 - -

made by diamond made by diamond tip on AFMtip on AFM



Scattering by 0.305 m PSL Spheres on Si Substrate & on SiO2 Film

Si 0.785-mSiO2

-40 -30 -20 -10 0 10 20 30 40 50 60

Scattering Angle, s (deg)

10-6

10-5

10-4

10-3

10-2

10-1

100

dC

sc/d

(

m2/s

r)

ExperimentModeling

0.305 m PSL sphere0.785 m SiO2 filmSi substrate = 632.8 nmi = 70o

s pol

-40 -30 -20 -10 0 10 20 30 40 50 60

Scattering Angle, s (deg)

10-3

10-2

10-1

100

dC

sc/d

(

m2/s

r)

ExperimentModeling

0.305 m PSL sphere

Si substrate

= 632.8 nm

i = 70o

s pol

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