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Conducted byDEPARTMENT OF EEE & IEEE STUDENT BRANCH KCE (STB-16621)WORKSHOPonROBO-PRO15-12-2014 to 18-12-2014KINGS COLLEGE OF ENGINEERING

WORKSHOPonROBO-PRO15-12-2014 to 18-12-2014KINGS COLLEGE OF ENGINEERING

Welcomes you all for the

Basics

Current flowing in conductor is electrical

Current in semiconductor is electronics

Basic ElectricalElementsActive Elements (Sources) DC Sources AC Sources

AC sourcesProduces Sinusoidal voltage and current.

DC sourcesProduces constant voltage or current.

POWER (W)CURRENT(A)VOLTAGE(V)

PowerTotal work done in moving the electrons.

CurrentNo of coulombs transfer per second.

Voltage energy required to transfer per second.Passive Elements (Load/Sink/ opposes active elements)Resistor ()

Inductor (H)

Capacitor (F)

Resistor which opposes flow of electron

Inductor which opposes change in current or flux

Types of inductorAir core inductor

Radio frequency inductorSkin effectProximity effectDielectric lossesParasitic capacitance Basket-weave coils Spiderweb coils Litz wire

Ferromagnetic core inductor Laminated core inductorFerrite-core inductorToroidal core inductorChokeVariable inductor

Capacitor which opposes change in voltage

Numbering system used in semi conductor devices

Total 5

First 2 Letters & 3 Number [ BF 194]= Entertainment & Consumer Equipment

First 3 Letters & 2 Number[BFX 65]= Industrial and Professional EquipmentFirst Letter of symbol indicate nature of semiconductor material. A for Germanium B for silicon C for Gallium arsenide. R for compound semiconductor material

Eg. AC 125 is germanium transistor BC 149 is silicon transistor

second letter identifies the device and its function in the circuit A - Diode. B - Varactor diode (variable capacitor diode). C - audiofrequency (AF) Low power transistor. D - AF Power transistor. E - Tunnel Diode. F - High frequency (HF) Low power transistor. G - Miscellaneous device. H - Device sensitive to Magnetic. K - Hall-effect device. L - High frequency(HF) power transistor.

M - Hall-effect modulator. N - Photocoupler P - Radiation sensitive diode(Light detector). Q - Radiation generating diode (Light emitter). R - Thyristor (SCR or Triac or other power switching device) S - Low power switching Transistor T - High power transistor. U - Power switching Transistor. W - surface acoustic wave device X - Diode, Multiplier. Y - Power device(rectifying). Z - Zener Diode(voltage reference)Numbers indiate = serial number of devicesOther numbering system also exist For Eg. 1N4001 is silicon diode. 2N3903 is silicon NPN general purpose transistor.

Here, FIRST NUMBER 1. =Diode 2. = Transistor 3. = FET

SECOND LETTER Device and its function N

SUBSEQUENT NUMBER Serial number of device 4007

Transistors - "Solid state switches"A switch with no moving parts:Input is called "collectorOutput is called "emitterControl is called "baseTransistors are also built in the "normally open" and "normally closed" varieties.

First microscopic images of electrical forces inside a transistor

Transformer

ANY SUGGESTIONS & QUERIES47

50Do Engineering

--------rather than

------------Studying Engineering51

Think Beyond

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