partner 1 : tyndall national lab, ireland ( tyndall )

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Partner 1 : Tyndall National Lab, Ireland ( Tyndall ). Topics : Nanoimprint lithography (using silicon stamps) for fabrication of nanoscale polymer optical devices (gratings, waveguides, splitters, interferometers). - PowerPoint PPT Presentation


  • Partner 1: Tyndall National Lab, Ireland (Tyndall)Topics:Nanoimprint lithography (using silicon stamps) for fabrication of nanoscale polymer optical devices (gratings, waveguides, splitters, interferometers)Advantages:High resolution (~100 nm)Parallel processing of the polymer layersFIG.: Nanoimprint process: (a) sample and rigid stamp are heated to T>Tg, (b) stamp and sample are pressed together, (c) imprinted sample after cool-down and separation, (d) residual layer removal by Reactive Ion Etching (RIE).

  • Partner 2: European Lab for Non-linear Spectroscopy (LENS)Topics:Random lasers : Explanation of spectra, tuning and switching using liquid crystals (infiltrating the random sample by liquid crystals)Disorder and order in photonic materials, light transport, Anderson localization of lightLiquid crystals as complex random media (anisotropic multiple light scattering anisotropic diffusion)Tunable 3D photonic crystalsDevelopment of a controlled single pore infiltration process for re-writeable photonic circuits FIG.: Schematic model of the quasi-two dimensional diffusion process leading to directional and polarized random laser action in a complex system of amplifying liquid crystal droplets in a polymer. Both polarization and threshold of the random laser can be controlled electrically.

  • Partner 3: ICFO-Institut de Cincies FotniquesTopics:Evanescent wave sensing for safety and biological applications Tailoring light emission in organic LEDsOptical manipulation in the nanoscaleModification of the dispersion of metal nanoparticles through their interaction with a metallic surface explanation of the effectFIG.: (A-B) 2.4 m2.4 m images recorded simultaneously above the fabricated sample. (A) AFM topography, (B) ASNOM image (illumination from the right). (C-D) Comparison over a unit cell of the theoretical near-field intensity (C) and the experimental data (D).

  • Partner 4: University of Exeter (UEX)Topics:Plasmonics of metallic nanostructures (both localized and extended plasmon modes)Interaction between molecules and plasmons (including fluorescence and energy transfer)Plasmons for sensing and imaging (including biosensing and bio-imaging)FIG: Top left an SEM of silver nanoparticle array fabricated using nanosphere lithography (upper left shows a region where the spheres remain) - light regions are metal, dark the substrate. Top right an SEM of a square array of particles made using e-beam lithography. Bottom, transmittance spectra of the two samples. The dip in transmittance results from excitation of the localized surface plasmon resonance note the sharper resonance for the e-beam fabricated sample.

  • Partner 5: Consejo Superior de Investigaciones Cientificas (CSIC)Topics:Preparation and characterization of high quality ZnO/PS composites and ZnO inverted opals of submicron unit cell size, by metalorganic chemical vapor deposition Band engineering in opals by controlled infiltration with a high index materialStudy of the spontaneous emission spectra in 2D photonic crystal microcavities by varying the size and depth of the cavitiesStudy of the magnetoopical properties of Ni nanowire systemsFIG.1: Left (right) panel shows reflectance collected in hexagonal (square) regions of a ZnO inverted opal. Central panel shows the corresponding photonic bands.Fig. 2: Polar Kerr Spectra of Ni nanowires embedded in an alumina matrix for two different nanowires diameters (D) and Kerr rotation spectra of a thick Ni film (for comparison)

  • Partner 8: Bilkent University (Bilkent)Topics:Demonstration of negative EM wave refraction by metallodielectric photonic crystals for a wide incidence angles regime.Fabrication and characterization of a left-handed material at 100 GHzDevelopment of optical GaN based quantum modulators Fabrication and characterization of AlGaN based avalanche photodiodes operating in the solar-blind spectral regionFIG.: Electric field intensity at the exit of the metallodielectric photonic crystal. a) for 9 GHz (positive refraction). b) for 9.7 GHz (negative refraction). Incidence angle is 25 degrees.

  • Partner 10: Ko University (KO)Topics:Study of the morphology dependent resonances of silicon microspheresDemonstration of those resonances using an optical fiber half-coupler and a distributed feedback laserDemonstration of the ability of the microspheres to be used for filtering applications in optical communication systems FIG.: The experimental setup for the silicon microsphere resonances demonstration (top) and the elastic scattering intensity and power transmission spectra from the microsphere (bottom).

  • Partner 11: Universit di Roma La Sapienza (UR-DE)Topics:Theoretical analysis of the emission of a dipole pumped by two counter-propagating laser beams and placed inside a 1D photonic crystal. Demonstration of the emission control through control of the phase difference of the beamsGrowth of AlN/GaN films by molecular-organic chemical vapor deposition (MOCVD); demonstration of the non-linear properties of those films (by 2nd harmonic generation measurements)Development of a set-up for delay time measurements of ps laser pulsesFIG.: Top: Lateral section of the investigated AlN/GaN sample. The three layers represent the elementary cell of the DBR structure. Bottom: Second harmonic signal versus the incidence angle, for the AlN/GaN sample. Both fundamental and generated beams are p-polarized. The fundamental beam wavelength is 1064 nm.

  • Partner 12: Centre National De La Recherche Scientifique (LPN-CNRS)Topics:Development of a soft UV assisted nanoimprint lithography (UV-NIL) technique Application of the UV-NIL technique for the fabrication of high aspect ratio nanostructures (resolution ~100 nm, etch depth ~1.5 m)FIG. 1: Dot array with 200nm diameter before (a) and after (b) lift-off of 20nm thick NickelFIG. 2: SiO2 nano-pillars lattice with 200nm diameter and 1.6 m depth over a 200200 m2Advantages of the UV-NIL techn.:Low cost, high flexibility Simple and fastImprinting at ambient temperature and low pressurePossibility for fine alignmentGood process compatibility for bio applications

  • Partner 13: Vilnius Pedagogical University (VPU)Topics:Fabrication and characterization of disordered, partially ordered and ordered systems doped with transition metals (TM) and TM compounds Study of the temperature and field dependence of the properties of the disordered and the partially ordered systemsStudy of the band-gap position of the ordered systems as a function of the dopant concentrationAim: Development of tunable systemsFIG. 1: SEM (bar corresponds to 200 nm) micrograph of Fe-doped silica films on Si produced from FeCl3-precursor and annealed in H2FIG. 2: Reflection spectra of pure (1) and iron-porphyrin (Fe-TPPS)-doped (2,3) silica opal-like structures at angle of incidence equal to 0o (1,2) and 10o (3).

  • Partner 14: Technical Research Centre of Finland (VTT)Topics:Study of a photonic crystal (PC) slab with ring-shaped holes (RPC); demonstration of the increased band gap reflectivity of this PC compared to PCs with air holesUse of the RPC for the realization of high-quality cavities (Q~1060) and waveguides of very low group velocities (~0.005c)Fabrication of opal structures by vertical deposition on to Si templatesDevelopment of a model to estimate the local quality of finite 3D PCs from reflectance spectraFIG. 1: Scanning electron micrograph of a ring photonic crystal patterned into SOI (silicon layer thickness: 240nm). The ring line width is only 70nm FIG. 2: Face-centered cubic (111) opal grown from monodisperse silica spheres with diameter 980 nm by vertical deposition on patterned silicon substrate

  • Partner 15: Institute of Solid State Physics of the Russian Academy of Sciences (ISSP)Topics:ZnO nanocrystals of different shape:Synthesis by the gas transport methodMeasurements of their photoluminescence (PL) spectra under optical excitationExamination of the PL spectra: mechanisms of generation, mode structure, threshold powers of their UV lasingFIG. 1: Electron-microscope images of the zinc oxide nanorods of different typeFIG. 2:PL spectra of the ZnO nanocrystals of the above types at different intensity (kW/cm2) of the exciting nitrogen laser: 1-70, 2-180, 3-600, 4- 2500, 5-8000, 6-22000, 7-33000 and 8- 70000.T=300K.

  • Partner 16: Universitaet Hamburg (UHamburg)FIG. 1: Typical photoluminescence spectra (normalized) of CdTe, CdHgTe and HgTe nanocrystals. Top right: water soluble emitting powders (ca. 200 mg) of CdTe NCs of 2 different sizes under day light and under UV-lamp excitation. True color image of different solutions of CdTe and ZnSe NCs under UV-lamp excitation. Topics:Synthesis of strongly luminescent ZnSe, CdTe HgTe and CdHgTe nanocrystals by a wet-chemical based approach Demonstration of various assembling methods for a controlled preparation of assemblies of semiconductor and/or metal nanocrystals FIG. 2: SEM images of Au/Pt 3D ordered hollow spheres (left) and inverse macroporous opals (right)

  • Partner 17: Ioffe Physico-Technical Institute of the Russian Academy of Sciences (Ioffe-SP)Topics:Study of the nonlinear diffraction and the 2nd harmonic generation enhancement in opal-Si photonic crystalsStudy of the modification of the spontaneous emission rate of Er ions placed in 1D photonic crystals (PCs) at the lower photonic band edgeDemonstration of electroluminescent three-dimensional PCsDemonstration of opal-AgI PCs controlled using the superionic phase transition of AgIFabrication of polypyrrole nanowire arraysFIG. 1: Reflection from the (111) surface of the opal-AgI composite: (1) AgI in the semiconductor phase, T=90C; (2) AgI in the superionic phase, T=150C.FIG. 2: Intensity of the SH wave reflected from the (111) face of the opal-silicon photonic crystal (filled circles), comp


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