optical 16.11_66782 slc catalog

OPTICAL CATALOGVersion 17.2

OpticalTable of Contents

Single Layer Ceramic Capacitors (SLC’s)General Information Dielectrics, Environmental Tests, How to Order (Catalog Number Description) . . . . . . . . . . . . . . . . . . . . . . . . . . .2-3

GH/GB Series – SLC’s with & without Borders (Maxi & Maxi+ X7R Dielectrics) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4-5

GD Series – Ultra-Maxi X7R Dielectric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6

GH/GB Series – SLC’s with & without Borders (X7S Dielectrics – Code Z) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7

GH/GB Series - SLC’s with & without Borders (NP0, Temp Compensating & X7R Dielectrics) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8-9

GHB/GH** Series – Dual-Cap & Multi-Cap Arrays (Multiple Dielectrics) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10-11

Ultra-Broadband ProductsGR Series – Ultra-Broadband Resistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12-13

Optical DevicesCrystal Etalon Filter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Introduction to Microwave Capacitors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15-26

NOTICE: Specifications are subject to change without notice. Contact your nearest AVX Sales Office for the latest specifications. All statements, information and data given herein are believed to be accurate and reliable, but are presented without guarantee, warranty, or responsibility of any kind, expressed or implied.Statements or suggestions concerning possible use of our products are made without representation or warranty that any such use is free of patent infringement and are not recommendations to infringe any patent. The user should not assume that all safety measures are indicated or that other measures may not berequired. Specifications are typical and may not apply to all applications.

1

2

Microwave SLCsSingle Layer Capacitor Series

GENERAL INFORMATIONAVX offers a complete line of Single Layer Ceramic (SLC)Capacitors with dielectric constants ranging from 14(NP0) to 60,000 (X7R). Product offerings include stan-dard SLC’s (with & without borders) in all dielectric fam-ilies. Also available are Dual-Caps & Multi-Cap Arrays aswell as specialized components for DC Blocking appli-cations.Our Maxi & Maxi+ grain boundary barrier layer (GBBL)Single Layer Ceramics provide a combination of highcapacitance, voltage rating and small footprintsunmatched in the industry and are ideally suited forbroadband bypass applications. Additionally, our “Z”dielectric (also a GBBL material system) offers a costeffective alternative to Z5U & Y5V dielectrics with amuch improved temperature coefficient over an expand-ed operating temperature range of –55°C to +125°C.Standard terminations are Ti/W-Au and Ti/W-Ni-Au. All

terminations are sputtered providing excellent surfacesfor wire bonding and exceptional adhesion characteris-tics. Wire bond tests are performed on every material lot.Bond strength must meet a minimum of 6 and 20 gramsfor 1 and 2 mil Au wire respectively (as compared to MIL-STD-883 limits of 3 and 8 grams) before being releasedto production (40 bonds with each wire size, zero failurespermitted).All parts are capable of meeting or exceeding the envi-ronmental & mechanical specifications in Table II. In addition to an extensive offering of standard catalogdevices, custom designs (and prototypes) are availableupon request. Delivery of samples seldom exceeds twoweeks once design parameters have been established.

GH

Type/Style

02

Size

5

Voltage Rating

8

DielectricCode

102

CapacitanceValue

M

CapacitanceTolerance

A

TerminationCode

6N

PackagingCode

PART NUMBER DESCRIPTION (see individual sheets for more detail)

Microwave SLCsSingle Layer Capacitor Series

GENERAL INFORMATION

TABLE I - Dielectric Codes, Types & Product Styles

Dielectric Dielectric Temperature Temperature Min Q Max.DF (%)* IR (Min)` Type & Code Constant Coefficient Range at 1MHz 1MHz 1KHz 25°C

(typ)NPO A 14 0±30 ppm/°C -55°C to +125°C 10,000 0.01 N/A 105 Meg Ohms

A 31 0±30 ppm/°C 660 0.15 N/AA 60 0±30 ppm/°C 660 0.15 N/A

Temp 4 200 ±7.5% (non-linear) -55°C to +125°C 400 0.25 N/A 105 Meg OhmsComp 7 420 -2000±500 ppm/°C 200 0.7 0.3

Y 650 -4700±1500 ppm/°C 400 0.3 0.3X7R C 1,100 ±15% -55°C to +125°C 40 2.5 104 Meg Ohms

C 2,000 40 2.5C 4,200 33 2.5

X7S Z 2,500 ±22% -55°C to +125°C 30 2.5 104 Meg OhmsZ 5,000Z 9,000Z 14,000Z 18,000

X7R 8 (Maxi) 20,000 ±15% -55°C to +125°C 30 2.5 104 Meg OhmsX7R 9 (Maxi+) 30,000X7R 0 (Ultra-Maxi) 60,000

Method orMIL Reference Parameter ParagraphMIL-STD-883 Bond Strength 2011.7MIL-STD-883 Shear Strength 2019MIL-PRF-49464 Thermal Shock 4.8.3MIL-PRF-49464 Voltage Conditioning 4.8.3MIL-PRF-49464 Temperatue Coefficient 4.8.10MIL-STD-202 Low Voltage Humidity 103 AMIL-STD-202 Life Test 108

TABLE II

WL

T

WL

T

B

GH GB

* Capacitance & DF are measured at 1MHz for values ≤100pF and 1KHz for capacitance values >100pF

3

Microwave SLCsMaxi & Maxi+ Series:Single Layer Ceramics With & Without Borders

GENERAL INFORMATIONMaxi and Maxi+ are both AVX proprietary intergranular barrier layer dielectric formulations. Both use SrTiO3 astheir major constituent and have dielectric constantsexceeding 20,000 and 30,000 respectively. Grain bound-ary barrier layer (GBBL) capacitors have been well dis-cussed in various literature sources and, while simple inprinciple, their resulting electrical properties are depen-dent on a complex combination of materials and processtechnology.AVX’s Maxi & Maxi+ dielectrics have the distinctiveproperties that are ideal for extremely broadband by-pass capacitors. This built-in feature gives these prod-ucts a unique disspersive effect that is illustrated in theaccompanying curves. AVX’s ability to control the prerequisite relationships between materials andprocess has resulted in dielectrics that make theseSingle Layer Ceramics especially well suited for applica-tions requiring high frequency performance well into the millimeter band.All Maxi & Maxi+ dielectrics exhibit X7R temperature performance of ±15% from –55°C to +125°C. Electricalcharacteristics, as outlined in MIL-C-49464, will meetthose specified for Class II dielectrics, rather than theless stringent Class IV, which typically describes GBBLdielectrics.

Sample kits are available MAXI KIT Catalog # KITSLCK20KSAMPL includes 10 each:GH0158101MA6N, GH0158221MA6N, GH0258471MA6N, GH0358102MA6N, GH0458182MA6NMAXI+ KIT Catalog # KITSLCK30KSAMPL includes 10 each:GH0159331MA6N, GH0259751MA6N, GH0359152MA6N, GH0459302MA6N, GH0559602MA6N

Ca C ecnaticap h w egna i repmeT ht uta re

8-

6-

4-

2-

0

2

4

6

8

-70 - 06 -50 - 04 -30 - 02 -10 0 01 02 03 04 05 06 07 08 09 001 011 021 031 041

Temp re uta r C°( e )

Typ

ical

Del

ta C

ap (%

)

5Q 0

5+E1 6+E1 7+E1 8+E1 9+E1 01+E1

Frequency (Hz.)

0+E1

1+E1

2+E1

3+E1

4+E1

Imp

edan

ce

Fp001Fp022Fp074

Fp 0001

TypicalTypical

Impedance vs. Frequency

4

5

Microwave SLCsMaxi & Maxi+ Series:Single Layer Ceramics With & Without Borders

GH/GB01 GH/GB02 GH/GB03 GH/GB04 GH/GB05 GH/GB06(L) Length .015±.005 .025±.005 .035±.005 .050±.010 .070±.010 .090±.010

(.381±.127) (.635±.127) (.889±.127) (1.27±.254) (1.78±.254) (2.29±.254)(W) Width .015±.005 .025±.005 .035±.005 .050±.010 .070±.010 .090±.010

(.381±.127) (.635±.127) (.889±.127) (1.27±.254) (1.78±.254) (2.29±.254)(T) Thickness .007±.002 (.178±.051)(B) Border .002±.001 (.051±.025)

GH SERIES: MAXI SINGLE LAYER CAPACITORS WITHOUT BORDERS

GB SERIES: MAXI SINGLE LAYER CAPACITORS WITH BORDERS

GH

Type CodeGH = w/o bordersGB = w/ borders

02

Case Size010203040506

5

WorkingVoltage Code

5 = 50 VDC

8

DielectricCode

8 = Maxi(k = 20,000)

9 = Maxi+(k = 30,000)

102

CapacitanceValue

EIA CapCode in pF

M


K = ±10%M = ±20%Z = +80% -20%P = +100% -20%

A

TerminationCodeA = Au

(100 μ-in min)over

Ti/W (1000 Å nom)also available

N = Ti/W-Ni-Au

6N

PackagingCode

6N = AntistaticWaffle Pack

HOW TO ORDER

DIMENSIONS: inches (millimeters)

Cap (pF) Cap (pF) Cap (pF) Cap (pF) Cap (pF) Cap (pF)Min Max Min Max Min Max Min Max Min Max Min Max68 330 330 750 750 1200 1200 2700 2700 4700 4700 8200

GH SERIES: MAXI+ SINGLE LAYER CAPACITORS WITHOUT BORDERS



GB SERIES: MAXI+ SINGLE LAYER CAPACITORS WITH BORDERS


6

Capacitance Change with Temperature

Typi

cal D

elta

Cap

(%)

Temperature (°C)

0-70-8

-6

-4

-2

0

2

4

6

8

-60 -50 -40 -30 -20 -10 10 20 30 40 50 60 70 80 90 100 110 120 130 140

GD

Type Code

20

L&W (mils)

3

RatedVoltage

3 = 25 VDC

0

Dielectric0 = Ultra-Maxi(k = 60,000)

102

CapacitanceEIA Cap

Code in pF

Z

Capacitance Tolerance

M = ±20%Z = +80 -20%

A

TerminationAu (100 μ-in)

overTi/W (1000Å)

W

PackagingAntistatic

Waffle Pack(400 per)

HOW TO ORDER

GD SeriesUltra-MAXI Series

The Ultra-Maxi Series is the latest addition to the AVX family of proprietary high k,inter-granular barrier layer dielectic systems. This series is similar to our Maxi &Maxi+ product offerings, but with the notable difference that the dielectric con-stant has been increased to 60,000 - double the previous high for our industryleading GBBL formulations.These new Single Layer Ceramic Capacitors, with X7R TCC and rated at 25VDC(-55°C thru +125°C), set a new standard for circuit miniturization. On average, therequired board mounting area will be reduced by approximately two-thirds whencompared to an equivalent capacitance value for our Maxi+ series. The Ultra-Maxi series offers an ideal solution for broadband bypass applications wherehigh performance and the smallest footprint are the primary considerations.The Ultra-Maxi Series is RoHS compliant - as are all AVX SLC products.Terminations (Au over Ti/W) provide an excellent wire bonding surface and arecompatible with conductive epoxy and Au/Sn eutectic solder attach.Samples and custom configurations are available on request.

Style Length x Width Capacitance (pF)±.003" (0.076) Min Max

GD10 .010 x .010 (.254 x .254) 200 300GD15 .015 x .015 (.381 x .381) 300 600GD20 .020 x .020 (.508 x .508) 550 1000GD25 .025 x .025 (.635 x .635) 900 1500GD30 .030 x .030 (.762 x .762) 1400 2000GD35 .035 x .035 (.889 x .889) 1900 2700GD40 .040 x .040 (1.016 x 1.016) 2600 3500GD45 .045 x .045 (1.143 x 1.143) 3300 4400GD50 .050 x .050 (1.270 x 1.270) 4200 5400GD55 .055 x .055 (1.397 x1.397) 5100 6500

Thickness: .0065±.001 (.165±.025)

inches (millimeters)

Sample kits are available ULTRA-MAXI KIT Catalog # KITSLCK60KSAMPLincludes 10 each:GD1030301ZAW, GD1530601ZAW,GD2030102ZAW, GD3030202ZAW

7

GH

TypeCode

GH = No BordersGB = With Borders

5

WorkingVoltageCode

5 = 50V1 = 100V

Z

DielectricCode

Z = X7S(k = 2.5K-18K)

102

Capacitance

EIA CapCode in pF

M


CodeK = ±10%M = ±20%Z = +80% -20%P = 100% -20%

A


(100 μ-in min)over


N = Ti/W-Ni-Au

6N

PackagingCode


02

CaseSize010203040506

HOW TO ORDER

Microwave Single LayerX7S Capacitors Z Dielectric With and Without Borders

GENERAL INFORMATIONThis grain boundary barrier layer (GBBL) system wasdeveloped as a replacement for conventional Z5U/Y5Vdielectrics. With X7S temperature characteristics, the ZSeries offers not only a significant improvement over theTCC of these two dielectrics, but does so over a muchwider operating range of -55C to +125°C. Voltage ratingsof 50 and 100VDC are available.The Z Series is offered in a range of five dielectric constants(2,500, 5,000, 9,000, 14,000 and 18,000) and products areavailable with & without borders.

Sample kits are available Z Dielectric KIT Catalog # KITSLCZDIESAMPLincludes 10 each:GH015Z101MA6N, GH025Z221MA6N,GH035Z471MA6N, GH045Z102MA6NSamples of individual P/N's are also available

GH/GB01 GH/GB02 GH/GB03 GH/GB04 GH/GB05 GH/GB06Length .015±.005 .025±.005 .035±.005 .050±.010 .070±.010 .090±.010& Width (.381±.127) (.635±.127) (.889±.127) (1.27±.254) (1.78±.254) (2.29±.254)(T) Thickness .007+.002, -.001 (.178+.051, -.025)(B) Border .002±.001 (.051±.025)

Z DIELECTRIC GH WITHOUT BORDERSCap (pF) Cap (pF) Cap (pF) Cap (pF) Cap (pF) Cap (pF)

Min Max Min Max Min Max Min Max Min Max Min Max20 200 35 470 80 800 150 2000 300 3000 500 4700

Z DIELECTRIC GB WITH BORDERSCap (pF) Cap (pF) Cap (pF) Cap (pF) Cap (pF) Cap (pF)

Min Max Min Max Min Max Min Max Min Max Min Max20 150 30 390 70 700 140 1800 280 2700 470 4500

CAPACITANCE CHANGE WITH TEMPERATURE

X7S

Z5U

Y5V

40

20

0

-20

-40

-60 -40 -20 0 20 40Temperature (°C)

Typi

cal D

elta

Cap

(%)

60 80 100 120 140

-60

-80

-100


8

Microwave SLC’s

GENERAL INFORMATIONIn addition to the standard SLC products shown below,AVX is now able to offer bordered versions in thesesame dielectric families as detailed on the opposingpage utilizing micron resolution photolithography andetching processes.With borders precisely defined, these parts will be ben-eficial in those applications that require enhanced visualdefinition during placement and wire bonding.Additionally, bordered devices have proven effective inreducing susceptibility to conductive epoxy electrodebridging.Custom designs to meet stringent circuit trace widthmatching requirements are available upon request.

Case Code/Size GH16 GH18 GH26 GH35Length & Width .015±.003 (.381±.076) .018±.003 (.457±.076) .025±.005 (.635±.127) .035±.005 (.889±.127)

Thickness Min/Max .0045/.012 (.114/.035)Cap (pF) Cap (pF) Cap (pF) Cap (pF)

Dielectric kMin Max Tol* Min Max Tol* Min Max Tol* Min Max Tol*

A 14 0.06 0.2 A 0.08 0.2 A 0.2 0.4 A 0.4 0.9 AA 31 0.1 0.4 A 0.2 0.5 A 0.4 1 A 0.7 2 AA 60 0.3 1 B 0.4 1.1 A 0.8 2 B 1.5 4.7 B4 200 0.8 3 C 1.2 3.6 C 2.4 6.8 C 4.7 13 D7 420 1.5 5.6 J 2.2 6.2 D 4.3 12 D 8.2 22 JY 650 2.7 10 K 4.3 11 D 7.5 22 J 15 43 JC 1100 3.3 15 K 6.8 18 J 13 36 J 27 75 JC 2000 6.2 29 K 13 36 J 24 68 J 47 130 JC 4200 13 60 K 30 75 J 56 150 J 110 300 J

GH SERIES: SINGLE LAYER CAPACITORS WITHOUT BORDERS NP0, TEMPERATURE COMPENSATING & X7R DIELECTRICS



Case Code/Size GH50 GH70 GH90Length & Width .050±.010 (1.27±.254) .070±.010 (1.78±.254) .090±.010 (2.29±.254)

Thickness Min/Max .0045/.012 (.114/.035)Cap (pF) Cap (pF) Cap (pF)

Dielectric kMin Max Tol* Min Max Tol* Min Max Tol

A 14 0.6 2 A 1.3 3.9 A 2.2 5.6 AA 31 1.5 4.7 B 3 8.2 B 5.1 13 CA 60 2.7 9.1 C 6.2 16 D 10 27 G4 200 8.2 30 G 20 56 G 33 82 G7 420 15 51 G 33 91 G 56 150 GY 650 27 100 G 62 180 G 110 270 GC 1100 47 160 J 100 300 J 180 470 JC 2000 82 300 J 220 560 J 330 820 JC 4200 180 680 J 430 1200 J 750 1800 J

Note: Tol* - Letter indicates tightest available

9

Microwave SLC’s

Case Code/Size GB15 GB20 GB25 GB30Length & Width .015±.002 (.381±.051) .020±.002 (.508±.051) .025±.002 (.635±.051) .030±.002 (.762±.051)

Thickness Min/Max .0045/.012 (.114/.035)(B) Border .002+.002,-.001 (.051+.051,-.025)

Cap (pF) Cap (pF) Cap (pF) Cap (pF)Dielectric k

Min Max Tol* Min Max Tol* Min Max Tol* Min Max Tol*A 14 0.06 0.1 A 0.1 0.2 A 0.2 0.3 A 0.3 0.4 AA 31 0.1 0.2 A 0.3 0.4 B 0.4 0.7 B 0.6 1 BA 60 0.3 0.4 B 0.5 0.8 C 0.8 1.3 C 1.2 2 C4 200 0.9 1.3 D 1.5 2.7 D 2.7 4.7 M 3.9 6.8 K7 420 1.5 2.4 D 2.7 4.7 M 4.7 8.2 M 6.8 12 KY 650 2.7 4.7 M 4.7 9.1 M 8.2 15 M 12 22 KC 1100 4.7 7.5 M 8.2 15 M 15 24 M 22 36 KC 2000 9.1 13 M 16 27 M 27 47 M 39 68 KC 4200 20 33 M 36 62 M 56 100 M 91 150 K

GB SERIES: SINGLE LAYER CAPACITORS WITH BORDERS NP0, TEMPERATURE COMPENSATING & X7R DIELECTRICS

GH

Type CodeGH = w/o bordersGB = w/ borders

16

CaseCode

5

WorkingVoltage

5 = 50WVDC1 = 100WVDC

A

DielectricCode

A = NP0*4 = TC7 = TCY = TCC = X7R

6R8

CapacitanceValue

EIA Cap Code in pF

First two digits =significant figures or“R” for decimal place.

Third digit = numberof zeros or after “R”significant figures.

K


A = ±0.05pFB = ±0.1pFC = ±0.25pFD = ±0.5pFG = ±2%J = ±5%K = ±10%M = ±20%

N

TerminationCode

N = Ti/W-Ni-Au Au (100μ-in min)

overNi (1500Å nom)

overTi/W (500Å nom)

6N

PackagingCode


HOW TO ORDER



Case Code/Size GB35 GB40 GB50Length & Width .035±.002 (.899±.051) .040±.002 (1.016±.051) .050±.002 (1.270±.051)

Thickness Min/Max .0045/.012 (.114/.035)(B) Border .002+.002,-.001 (.051+.051,-.025)

Cap (pF) Cap (pF) Cap (pF)Dielectric k

Min Max Tol* Min Max Tol* Min Max TolA 14 0.4 0.6 A 0.5 0.9 B 0.8 1.3 BA 31 0.8 1.5 C 1.1 2 C 1.8 3 CA 60 1.6 3 C 2.2 3.9 C 3.6 6.2 D4 200 5.1 9.1 K 6.8 13 K 11 20 K7 420 9.1 16 K 12 22 K 20 36 KY 650 18 30 K 22 39 K 36 62 KC 1100 30 51 K 39 68 K 62 110 KC 2000 51 91 K 68 120 K 110 200 KC 4200 120 200 K 160 270 K 270 430 K

Note: Tol* - Letter indicates tightest available

NOTE: A Dielectric (k =60) is not RoHS Compliant". TC has advised me that A dielectrics with k = 14 & 31 are RoHS compliant.

10

Microwave SLCsMulti-Cap Arrays

GENERAL INFORMATIONAVX Multi-Cap Arrays can be manufactured with 2, 3, 4,5 or 6 capacitors on one single layer ceramic substrate.These arrays are available in our X7S (Z), Maxi andMaxi+ family of GBBL dielectrics and offer a broadrange of capacitance values as detailed in the accom-panying tables.These arrays have advantages over single componentsin the form of smaller overall size, reduced handling andlower average unit costs. They are, therefore, a goodchoice for broad-band bypass applications where circuitboard layouts can utilize these configurations. The designs, shown along with the range of maximumcapacitance values, represent typical parts. Since mostapplications require specific form factors, customdesigns on all multi-cap arrays are available to meetindividual customer requirements and are offered withquick turn around. No charge samples are generallyshipped within two weeks of the design sign-off.Both standard and custom designs are available withborders for those applications where conductive epoxyrun up exposes the parts to the possibility of shorting.Maximum capacitance per pad for bordered devices will be necessarily somewhat lower than shown on theadjacent page. 2 and 3 cap arrays can be designed with differentcapacitance values per pad in circuit designs whereidentical values pad-to-pad are, for one reason or anoth-er, not altogether suitable. Additionally, the dual-caps are available to match microstrip widths as dictated by circuit considerations. Whenmounted with the individual pads down, the need for wire bonding is eliminated. The maximum capacitancevalues indicated on the typical designs shown representcapacitance per pad. Mounted with both pads downputs two capacitors in series. The effective series capac-itance (CEff), can be determined by 1/CEff = 1/C1 + 1/C2.Contact the factory or your local AVX representative.

DUAL-CAP

T

G

W

L

MULTI-CAP

W

G

T

L

11

Microwave SLCsMulti-Cap Arrays

GHB SERIES: DUAL CAP SINGLE LAYER CAPACITORS

GHB2 GHBY GHB3 GHB4 GHB5(L) Length .050±.010

.080±.010 (2.03±.254)(1.27±.254)

(W) Width .020+.000,-.003 .025+.000,-.003 .030+.000,-.003 .040+.000,-.003 .050+.000,-.003(.508+.000,-.076) (.635+.000,-.076) (.762+.000,-.076) (1.02+.000,-.076) (1.27+.000,-.076)

(T) Thickness .008±.002 (.203±.051)(G) Gap .005 min/.010 max (.127/.254)


Cap/Pad (pF) Cap/Pad (pF) Cap/Pad (pF) Cap/Pad (pF) Cap/Pad (pF)Dielectric Min Max Min Max Min Max Min Max Min Max

Z 25 220 54 500 65 600 88 770 100 960Maxi 200 350 430 780 520 940 700 1200 870 1500

Maxi+ 270 450 600 1000 730 1200 980 1500 1200 1900

GH-SERIES: MULTI-CAP ARRAY SINGLE LAYER CAPACITORS

GH*2 GH*Y GH*3 GH*6Length - Code (C) - 3 Caps .065±.010 (1.65±.254)Length - Code (D) - 4 Caps .090±.010 (2.29±.254)Length - Code (E) - 5 Caps .115±.010 (2.92±.254)Length - Code (F) - 6 Caps .140±.010 (3.56±.254)(W) Width .020±.005 .025±.005 .030±.005 .040±.005

(.508±.127) (.635±.127) (.762±.127) (1.02±.127)(T) Thickness .008±.002 (.203±.051)Pad Size (nominal) .020x.015 .025x.015 .030x.015 .040x.015

(.508x.381) (.635x.381) (.762x.381) (1.02x.381)(G) Gap (All Arrays) .005 min/.010 max (.127/.254)


Cap/Pad (pF) Cap/Pad (pF) Cap/Pad (pF) Cap/Pad (pF)Dielectric Min Max Min Max Min Max Min Max

Z 20 120 25 150 30 180 40 250Maxi 140 200 170 250 210 300 280 400

Maxi+ 200 300 250 370 300 450 400 600

GH

Type Code

B

Array CodeB = 2C = 3D = 4E = 5F = 6

5

Size Code2 = .020" WY = .025" W3 = .030" W4 = .040" W5 = .050" WS = Special

5

WorkingVoltage Code

5 = 50VDC

8

DielectricCode

Z = X7S 8 = Maxi9 = Maxi+

102

CapCode

EIA Cap Code in pF

P

CapToleranceP = +100%

-0%Z = +80%

-20%

Dual-CapsM = ±20%

available

A


(100 μ-in min)over


N = Ti/W-Ni-Au

6N

PackagingCode


HOW TO ORDER

AVX is pleased to introduce the GR Series next generation of surface mount Ultra-Broadband Resistors. This product was designed with our proprietary Glass SandwichFlexiterm® Technology, (GSFT). The Flexiterm® is a surface mountable automotive qualifiedtermination that adds an extra margin against damage due to flexture during installation.The GR Series has been designed with high quality selected materials that yield excellentperformance. This product is ideal for use in Optical Transceiver Modules or any applicationrequiring excellent ultra-broadband performance.

GR SeriesUltra-Broadband Resistors

FEATURES• Frequency Range: DC to 20GHz

• EIA 0402 Case Size

• Power Rating: 125 mW

• Operating Temperature:-40ºC to +125ºC

• 100% Laser Trimming for Tight Tolerances

• RoHS Compliant

APPLICATIONS• Optical Transceiver Modules

• Broadband Receiver

• TOSA/ROSA

• Wideband Test Equipment

• Low Noise Amplifier

• MMIC Amplifiers

• Mixers

• Directional Couplers

• Ultra-Broadband Splitters and Combiners

MARKETS• Opto-electronics

• Automotive

• Telecom

• Broadband Jamming for EW

• Satellite Communication

SPECIFICATIONS

Resistor Detail

Outline EIA 0402

Package Glass wafer sandwich

Standard Resistance Value (Ω) 25Ω, 50Ω, 100Ω, 200Ω

Resistance Value Range From 25Ω to 400Ω

Termination Flexiterm® (Ag/Epoxy), NiSn plated

Power Rating 125 mW

Operating Temperature Range -40ºC to 125ºC

Tolerance 1%

-5.90

-6.01

-6.12

-6.23

-6.34

-6.45

-6.56

-6.67

-6.78

-6.89

-7.001 3.9 6.8 9.7 12.6 15.5 18.4 21.3 24.2 27.1 30

Frequency (GHz)

GR Series Flatness vs. Frequency

Mag

nitu

de

(dB

) – M

od

eled

Modeled with HFSS using Rogers 3003 substrate, with a thickness of10 mils and a line width of 24 mils, representing data for 100 Ohms.

12

NC

CompensationNC = Non-Compensated

GR SeriesUltra-Broadband Resistors

HOW TO ORDER

RESISTOR MATERIAL (TaN) PROPERTIES

MECHANICAL DIMENSIONS

GR

Series

02

CaseSize

100

ResistanceValue (Ω)

3 significantdigits

0

MultiplierR = decimal

point multiplier

F

ToleranceF = 1%

T

TerminationT = NiSn Plated

F

TemperatureCoefficient ofResistance

-50 to -150 ppm/ºC

T

PackagingT = Tape & Reel

Sheet Resistance TCR ppm/ºC(Ohms per Square)

30 to 100: -50 to -150

W

L

T

t t

inches (mm)

The above part number refers to a GR Series 0402, 100 Ohms, F tolerance (1%), NISn PlatedNon-Compensated, with a TCR of -50 to 100 ppm/ºC, with Tape and Reel Packaging.

Cover Glass

Flex Termination (AG Epoxy)Plated with Ni/Sn

Glass Substrate

Epoxy

Size (EIA) Lenght (L) Width (W) Thickness (T) Terminal (t)0402 0.039 ±0.004 0.020 ± 0.004 0.020 ± 0.004 0.010 ±0.006

(1.00 ± 0.10) (0.50 ±0.10) (0.50 ± 0.10) (0.25 ± 0.15)

13

14

Crystal Etalon Filter has consisting of plate with refection coating on the both sides. We offerhigh precision Etalon Filters based on the unique production of synthetic crystals,processing, grinding and film formation technologies.

Optical DevicesCrystal Etalon Filters

FEATURES• Wideband

• High precise FSR

• Miniaturization

• Temperature characteristic product ofthree types

APPLICATIONS• Thermally turnable laser module

• Measurement equipment

C TYPE N TYPE W TYPE

Wavelength Shift on Minimum Small LargeTemperature Change

Amount of ±0.15 pm / ºC typ. 5.4 pm / ºC typ. 15.1 pm / ºC typ.Wavelength Shift

TemperatureCharacteristics

PROPERTIESKyocera offers three types of Etalon Filters with different temperature characteristics.

ITEM SPECIFICATION UNITS

Material Crystal –

Wavelength 1520 to 1620 nm

Outline Dimensions 1 to 10 square nm

FSR 50 / 100 GHz

Extension Ratio On discussion dB

(Reflectivity) %

EXAMPLE OF SPECIFICATION

Please consult us for specifications other than the above.

15

Typical Microwave Circuit ApplicationsMicrowave MLC, SLC, or Thin-Film capacitor applications inMIC circuits can be grouped into the following categories:

• DC Block (in series with an MIC transmission line)• RF Bypass (in shunt with transmission lines)• Source Bypass (in shunt with active device)• Impedance Matching

This chapter discusses these applications and the perfor-mance parameters of microwave capacitors affecting theseapplications.

DC BlockIn the DC block application, the chip capacitor is placed inseries with the transmission line to prevent the DC voltagefrom one circuit from affecting another circuit.The capacitance is chosen so that the reactance is only afraction of an ohm at the lowest microwave frequency ofinterest.The largest value capacitor is used as long as the self-resonantfrequency is still much higher than the highest frequency ofinterest.

RF BypassThe RF bypass application is used to effectively short out theRF to ground. The capacitor value is also picked to be aslarge as possible without approaching the self-resonance ofthe capacitor.

Source BypassThe source bypass application is the same as the RF bypassexcept the capacitor is used in conjunction with an activedevice.In this application the chip capacitor is butted up to thesource of the microwave FET device mounted on the MICcircuit. This is done to minimize the length of the wire bondfrom the source of the FET to the capacitor. The shorter thewire bond, the lower the corresponding inductance.

Figure 1

The top side of the capacitor should be completely metal-lized so that the bond wire from the FET to the edge of thecapacitor is minimized.The height of the capacitor must be less than or equal to theheight of the FET, usually about 0.005 inches. If the capaci-tor is higher than the FET, the capacitor will interfere with thebonding tool when wire bonding to the FET.

Impedance MatchingThe impedance matching application is to use the chipcapacitor to provide the required reactance at a specificpoint in the circuit.This is usually the most critical application in terms of thecapacitor maintaining a tight tolerance over temperature andfrom unit-to-unit.The other applications only require that the capacitance forthe DC block and RF bypass maintains a low reactance andthe tolerance can be as much as ±50%. Whereas the imped-ance matching function often requires ±1% tolerance.In general, microwave capacitors should have the followingproperties:

• Low-loss• Operate very much below the self-resonant frequency• The power handling capability should be commensurate

with the expected power performance of the circuit• Capable of wire bonding and gap welding• Low variation of capacitance over temperature• Low unit-to-unit variations in capacitance• Low dimensional variations from unit-to-unit

Typical SLC applications in MIC circuits are shown in:

Figure 2. Typical MIC Microwave Attenuator Hybrid with SLC’s.

“C” indicates SLC locations.

Introduction toMicrowave CapacitorsMicrowave Capacitors in MICs

SIMPLIFIED RF SPECTRUM

ELF

. VLF

. LF

500 MHz

60 cm3 GHz

10 cm

WAVEGUIDE SYSTEMS

COAXIALSYSTEMS

DISTRIBUTED NETLUMPED NET

MF. HF VHF UHF SHF. EHF

300 KHz 3 MHz 30 MHz 300 MHz 3 GHz 30 GHz

1 km 100 m 10 m 1 m 10 cm 1 cm

AMBROADCAST

FMBROADCAST

SATELLITE(COMMERCIAL)

RFIN

RFOUT

D DR C C

DC

C

C

RD R

D

BIAS

16

Scattering ParametersGenerally, transmission and reflections coefficient measure-ments completely characterize any black box or network.Transmission and reflections parameters — attenuation(gain), phase shift, and complex impedance — can bedescribed in terms of a set of linear parameters called “scattering” or “s” parameters. Knowing these characteristicparameters, one can predict the response of cascaded or parallel networks accurately. Unlike y or h parameterswhich require short circuit and open circuit terminations, “s”parameters are determined with the input and output portsterminated in the characteristic impedance of the transmis-sion line which is a much more practical condition to obtainat RF and microwave frequencies.To summarize, “s” parameters are more useful at microwavefrequencies because:

1. Equipment to measure total voltage and total currentsat the ports of the networks is not readily available.

2. Short and open circuits are difficult to achieve over abroadband of frequencies because of lead inductanceand capacitance. Furthermore, these measurementstypically require tuning stubs separately adjusted ateach frequency to reflect short and open circuits to thedevice terminals, and this makes the process inconve-nient and tedious.

3. Active devices such as transistors and negative resis-tance diodes are very often not short- or open-circuitstable.

There are four scattering parameters for a two-port network:S11, S12, S21, and S22.

S11 is the reflection coefficient at the input port with theoutput port terminated in a 50 ohm load.S12 is the reverse transmission coefficient in a 50 ohmsystem.S21 is the forward transmission coefficient in a 50 ohmsystem.S22 is the reflection coefficient at the output port with theinput port terminated into a 50 ohm load.

The reflection coefficients can be directly related to theimpedance of the device by the equation:Eq.1. ZIN/ZO = (1 + S11)/(1 - S11)

where ZIN= input impedanceZO = characteristic impedance of

the transmission line

This equation also defines the Smith Chart.

Return LossReturn loss is the ratio of the incident power to the reflectedpower at a point on the transmission line and is expressed indecibels. The reflected power from a discontinuity isexpressed as a certain number of decibels below the inci-dent power upon the discontinuity. It can be shown that

return loss can be related to the reflection coefficient andVSWR:Eq. 2. RL (dB) = 10 * log (Pinc/Pref)

= 20 * log (Einc/Eref) = 20 * log (1/Rho)

Eq. 3. Rho = (VSWR - 1)/(VSWR + 1)

Eq. 4. VSWR = (1 + Rho)/(1 - Rho)

where Rho = reflection coefficient RL = return loss Pinc = power incident Pref = power reflected Einc = voltage incident Eref = voltage reflected VSWR = voltage standing wave ratio

By the above equation, when the reflection coefficient is 1,the return loss is zero. In this case, no signal is lost and allthe signal incident upon the discontinuity was returned to thesource. As the reflection coefficient approaches zero, thereturn loss approaches infinity. That is, the more perfect theload, the less the reflection from that load.The return loss can be improved by an attenuator.Assume that we connect a perfectly matched 3 dB attenua-tor into a short circuit as shown in Figure 3.

Figure 3

The indicated 100 mw is decreased to 50 mw at the outputof the 3 dB attenuator. This 50 mw is reflected from the shortcircuit back through the attenuator in the reverse directionand one-half of this reflected power is lost in the 3 dB atten-uator. The reflected power at the input is 25 mw. Notice thereturn loss is equal to twice the attenuation because it is the“round trip” loss. This example shows that VSWR isdecreased when attenuation exists on a transmission lineand also that a high VSWR can be decreased by placing anattenuator in the line.

Mismatch LossMismatch loss is a measure of power loss caused by reflec-tion. It is the ratio of incident power to the difference betweenincident and reflected power and is expressed in dBs as follows:Eq. 5. Mismatch loss (dB) = 10 * log

[Pinc/(Pinc - Pref)] = 10 * log

[1/(1-Rho = 2)]

PINC

PINC

PREF

PREF

SHORT CIRCUIT

3 dB ATTEN____ = -6 dB

Introduction toMicrowave CapacitorsMicrowave Parameters

17

The mismatch loss for various values of VSWR is tabulatedas follows:

Table IVSWR Mismatch Loss 1.00 0.00 dB 1.20 0.04 dB 1.40 0.12 dB 1.50 0.18 dB 1.70 0.30 dB 2.00 0.51 dB 2.50 0.88 dB 3.00 1.25 dB

Insertion Loss MeasurementInsertion loss is measured by the substitution method. Theinsertion loss of the measurement system is used as a refer-ence. Then the DUT (Device Under Test) is inserted into thesetup and the new insertion loss is measured. The differencebetween the two losses is the insertion loss of the DUT.The insertion loss is measured using the test setup as shownin Figure 5.In order to accurately measure the insertion loss, sourceVSWR and load VSWR must be extremely Iow. It is assumedduring calibration (loss of the measurement system with the DUT removed from the test setup) that the VSWR of thegenerator and the load does not contribute any mismatchlosses. As discussed in the section on mismatch loss, anyVSWR above 1.2:1 may cause a minimum error of 0.04 dB.In addition, the two VSWRs may be additive or subtractivedepending on the phasing of the reflections. For example,source and load VSWRs of 1.2:1 can add to create an errorof 0.08 dB. The mismatches usually exhibit themselves asamplitude ripple as a function of frequency. It is importantwhen measuring low insertion losses that precautions aretaken to ensure low source and load VSWRs and to keep the

mismatch losses due to the two VSWRs to a small fractionof the expected insertion loss of the DUT.In using the scalar network analyzer it is a temptation to nor-malize the amplitude response regardless what the actualresponse is during calibration. It is advisable to eliminate theamplitude ripple first before normalizing the scalar analyzer.One way is to make use of the fact that VSWRs can beimproved by the use of matched attenuators. Often, 10 dBattenuators are placed before and after the DUT to provide aminimum of 20 dB return loss which corresponds to sourceand load VSWRs of less than 1.20:1. This will reduce theuncertainties due to mismatch losses to less than 0.02 dB.

Return Loss MeasurementThe return loss is measured by the following method: Thetest port is terminated by a short circuit so that all the inci-dent power is reflected. A detector on the bridge measuresthis power and this power is used as the reference for theincident power. The test port is then terminated by the DUTand the reflected power now measured. The differencebetween the power levels is the return loss.

Figure 5. Return Loss Measurement:

Establishing a Reference

SWR BRIDGE

DETECTOR

INCIDENTPOWER

(1) (2) (3) (4) (5)

(8)

(6) (7)N GPC-7 SMA SMA GPC-7 GPC-7

REFLECTION TRANSMISSION

(1) Wiltron 6647A 10MHz - 18GHz sweepers(2) Wiltron 560-97-A50(3) OSM 2082-2700-00(4) Device under test(5) OSM 2082-2700-00(6) OSM 7082-6193-10(7) Wiltron 560-7A50

SWEEPGENERATOR

SWRAUTOTESTING

GPC-7TO SMA

GPC-7TO SMADUT ATTEN DET

SCALARANALYZER

Test set-up for:

(1) Insertion loss (2) VSWR

______________

Figure 4


18

Figure 6

• All incident power is reflected at the short circuit.• The detector measures the reflected power.• An SWR bridge usually has a directivity of 35 to 40 dB.

In other words, only a minute fraction of the incident powerreaches the detector (the dotted line path) that is notreflected off the short circuit.

• The DUT is substituted for the short circuit and the oppo-site port is terminated by a matched termination (50 ohms).

• The reflected power depends on the DUT and is sensed bythe detector.

• The return loss is the difference between this reflectedpower and that measured with a reference short circuit.

• A significant improvement in calibrating a 0 dB return lossreference by averaging the short circuit and open circuitreflected powers.

• The dotted line in the figure below shows the reflectionsdue to an open circuit.

• The solid line in the figure below shows the reflections dueto a short circuit.

• Since the phase difference between short circuit and opencircuit is 180 degrees.

• By taking the average between these two voltages, theactual full reflection is very closely approximated.

Figure 7

Note that the insertion loss and return loss can be measuredsimultaneously by using the dual trace feature of the WiltronScalar Analyzer. Furthermore, the two measurements can bedone by using a controller such as the HP85 computer forsemi-automatic testing.The calibration for 0 dB return loss can be improved by aver-aging the short circuit and open circuit reflected powers.Since the phase difference is 180 degrees, the averageclosely approximates the actual full reflection.

DecibelsThe decibel, abbreviated “dB,” is one-tenth of the interna-tional transmission unit known as the “bel.” The origin of thebel is the logarithm to the base 10 of the power ratio. It is the power to which the number 10 must be raised in orderto equal the given number. The number 10 is raised to thesecond power, or squared, in order to get 100. Therefore,the log of 100 is 2.The decibel is expressed mathematically by the equation:Eq. 6 dB = 10 * log (P2/P1)

P2 = larger power P1 = lower power

The use of log tables can be avoided in practical applicationswhere exact values of the power are not required. One onlyneeds to know that a factor of 2 is equal to 3 dB and a fac-tor of 10 is equal to 10 dB and the rest of the conversionsare derived from these two relationships. The use of dBsreduces multiplication into an addition. For example:

3dB = 26dB = 2 x 2 = 4 9dB = 2 x 2 x 2 = 8

10dB = 1020dB = 100

The technique is based on the fact that 3, 6, and/or 9 dB can be added or subtracted (in some combination) to anydecibel value. Adding or subtracting 10 to a decibel valuesimply multiplies or divides the number by ten. Examples:1. 17dB = 20dB - 3dB

20dB is 10dB + 10dB or is equal to 100.3dB is equal to 2

Therefore, 20 dB - 3dB = 100/2 = 502. 36dB = 30dB + 6dB

1000 x 4 = 4000Decibel:The decibel is not a unit of power but merely is a logarithmicexpression of a ratio of two numbers. The unit of power maybe expressed in terms of dBm, where “m” is the unit, mean-ing above or below one milliwatt. Since one mw is neitherabove nor below 1 mw, 1 mw= 0 dBm.Nepers:An alternate unit called the neper is defined in terms of thelogarithm to the base “e.” e = 2.718.

1 neper = 8.686dB1dB = 0.1151 neper

SHORTOPEN

ABC

E0f1 f2

A1

C1B1

ACTUALFULL

REFLECTION

AVERAGING THE SHORT CIRCUIT AND OPEN CIRCUITREFERENCES FOR HIGHER ACCURACY

PREFERRED REFLECTION CALIBRATION


SWR BRIDGEINCIDENT

DUT 50 OHMTERMINATION

INPUT

REFLECTED

DETECTORDUT IN PLACE

19

CapacitanceMicrowave chip capacitors, although closely approx-imating an ideal capacitor, nonetheless also containparasitic elements that are important at microwave fre -quencies. The equivalent circuit is shown below:

Figure 8. Equivalent Circuit of a

Microwave Capacitor

where, C = desired capacitanceLS = parasitic series inductanceRS = series resistanceCP = parasitic parallel capacitance,

Rp, the parallel resistance is not shown as it is of concernonly at dc and low frequencies.The primary capacitance, C, is typically determined by mea-surement at 1 MHz where the effects of Rs, Ls, and Cpbecome negligible compared to the reactance of C. Thevalue of C determined at this low frequency is also valid at microwave frequencies when the dielectric constant has a very low variation versus frequency, as is typical in themodern dielectrics employed in microwave capacitors.The equivalent impedance of the capacitor at any fre quency is:Eq. 7. Zs = 1

sCp + 1

Rs + sLs + 1/sCs

where s = j2�f, f = frequency

Series and Parallel ResonanceIdeally, the impedance magnitude of a series mountedcapacitor will vary monotonically from infinite at dc to zero atinfinite frequency. However, the parasitics associated withany capacitor result in a nonideal response.Figure 9 shows the magnitude, :Z (F):, as a function offrequency.Figure 10 shows Z(f) on the Smith Chart, which includesmagnitude and phase.Eq. 8. In general, an impedance is represented by Z=R + j X.The Smith Chart maps the entire impedance half plane for R > 0 into the interior of a unit circle. The Smith Chart is amapping of the reflection coefficient, S11, of an impedance.S11 = (Z- ZO) / (Z + ZO). ZO is a reference impedance, typ-ically 50 ohms, and is in the center of the chart. The centralhorizontal axis is for X = O, with R < 50 to the left of center,and R > 50 to the right of center.

Figures 9 and 10 also show the point of series resonance (LSin series with C), and parallel resonance (LS in parallel withCP).

Figure 9. SLC Impedance Magnitude vs. Frequency

Figure 10. SLC Impedance on Smith Chart

Because there is always some parasitic inductance associat-ed with capacitors, there will be a frequency at which theinductive reactance will equal that of the capacitor. This isknown as the series resonant frequency (SRF). At the SRF,the capacitor will appear as a small resistor (RS). The trans-mission loss through a series mounted capacitor at its seriesresonant frequency will be low.At frequencies above the SRF, the capacitor begins to actlike an inductor.When used as a DC block, the capacitor will begin to exhib-it gradually higher insertion loss above the SRF. In otherwords, the capacitor will cause a high frequency rolloff of itstransmission amplitude response.When used as an RF bypass, as for the source of an FET, theinductance will cause the FET to become unstable which cancause oscillations or undesirable effects on the gainresponse of the FET amplifier.Beyond the SRF, there is a frequency called the parallel resonant frequency (PRF). This occurs when the reactance ofthe series inductor equals that of the parallel capacitor.

SERIES RESONANCE

PARALLELRESONANCE

COORDINATES IN OHMSFREQUENCY IN GHz

5002501501005025100

j10

j25

j50

-j10

-j25

-j50

j100

j150

j250

-j100

-j150

-j250

INDUCTIVE

CAPACITIVE

RS

RS

�LS

�S

�PZ (�)

RS � QP2

RS � QP2

___1�CP

___1�C

C RS

CP

LS

Introduction toMicrowave CapacitorsElectrical Model

20

At this parallel resonant frequency, the capacitor will appearas a large resister whose value is RPRF defined as:Eq. 9. RPRF = Rs x QP X QP; where, QP = 1/RS

WP/CP

WP = 2�fPRF

The parasitic parallel capacitance is usually very small whichresults in a parallel resonant frequency that is much higherthan the series resonance.For capacitor usage in RF impedance matching and tuningapplications, the maximum practical frequency for use is upto 0.5 times the SRF.For DC filtering and RF shorting applications, best perfor-mance is obtained near the SRF.At frequencies above the SRF, but below the PRF, the SLCcan be used as a low loss inductor with a built-in DC blockfor bypassing and decoupling.The series resonant frequency (SRF) of an SLC can be measured by mounting the capacitor in series on a 50 ohmtransmission line as shown in Figure 11.

Figure 11

At its series resonant frequency (SRF), the SLC will appear asa small resistance. This measurement can be performed witha vector network analyzer such as the Hewlett Packard8510. The SRF is at the frequency for which the phase of theinput reflection coefficient, S11, is crossing the real axis onthe Smith Chart at 180 degrees.The resonant frequency will be lowered by the inductanceassociated with the bonding attachment to the capacitor(i.e., bonding wires, ribbons, leads, etc.). The actual resonantfrequency of the capacitor by itself can be determined bytaking out the effects of the bonding attachment inductance.Using the low frequency measurements of the primarycapacitance alone, the inductance of the capacitor can bederived from the resonant frequency. With AVX SLC’s, theinductance is low enough so that the practical operating fre-quencies achieved can be beyond 20 GHz.

Equivalent Series ResistanceThe equivalent series resistance is the RS in the electricalmodel. At the SRF, the ESR can be readily determined on theSmith Chart display of the capacitor’s impedance. However,the ESR is not necessarily constant with frequency and itsvalue is typically determined by an insertion loss measure-ment of the capacitor at the desired frequency.The insertion loss is a combination of reflective and absorp-tive components. The absorptive component is the partassociated with the value of the ESR (i.e., the loss in RS).Because of the low values of ESR in microwave capacitors(on the order of 0.01 ohm), the insertion loss measurementis very difficult to make, but can be made with a test fixturesimilar to that shown in Figure 11, but with the input and out-put 50 ohm impedances transformed down to some moreconvenient impedance level, Rref, to obtain a more accuratemeasurement.When used as a DC block in the transmission line test fixture,the forward transmission coefficient, S21, and the inputreflection coefficient, S11, can be measured to determine:Eq. 10. Dissipative Loss.

DL=(1-:S11:^2)/(:S21:^2)Eq. 11. Reflection Loss.

RL=(1-:S11:^2) where S11 and S21 are expressedas complex phasors.

From the dissipative loss, DL, the ESR can be determinedas:Eq. 12. ESR = Rref * [1 - SQRT(DL)]/[1 + SQRT(DL)]The ESR typically increases with operating temperature andself-heating under high power. This increase can be seendirectly in the lab by measuring the insertion loss of thecapacitor as a function of temperature.A low ESR is especially necessary in SLC’s when used inseries with transistors in low noise amplifiers, high gainamplifiers, or high power amplifiers. For example, an ESR of1 ohm in series with a base input impedance of 1 ohm wouldresult in a serious compromise in ampIifier gain and noise figure by up to 3 dB.

Power RatingThe RF power rating of chip capacitors is dependent on:

• Thermal Breakdown• Voltage Breakdown

Thermal BreakdownThermal breakdown is self-heating caused by RF power dis-sipated in the capacitor.If the resultant heat generated is greater than what can beconducted away through the leads or other means of heatsinking, the capacitor temperature will rise.

CHIP CAPACITOR

50 ohmLINE

50 ohmLINE


21

As the capacitor temperature increases, the dissipation fac-tor and ESR of the capacitor also increase which creates athermal runaway situation.The small signal insertion loss is used to determine the per-centage of power which is dissipated in the capacitor.For instance, if the insertion loss is:

0.01 dB then .2% of the incident power is lost as heat0.10 dB then 2% of the incident power is lost as heat1.00 dB then 20% of the incident power is lost as heat

The capacitor will heat up according to the amount of powerdissipated in the capacitor and the heat sinking provided.Even very low ESR, 0.01 ohm at 1 GHz, can be significantwhen passing power through a series mounted capacitorinto a typically low impedance bipolar transistor base inputwith an input impedance of only 1 ohm. If 1% of 10 watts isdissipated in the capacitor, this 100 milliwatt of power causesa very large increase in the capacitor temperature dependenton its heat sinking in the MIC circuit.

Voltage BreakdownThe voltage breakdown also limits the maximum powerhandling capability of the capacitor.The voltage breakdown properties of the capacitors isdependent on the following:

• dielectric material• voids in the material• form factor• separation of the electrodes

Most microwave capacitors have a DC voltage rating of 50VDC. This is much greater than typical DC voltages of 3 to15 volts present on an MIC circuit.

Dielectric Constant Measurement atMicrowave FrequenciesThe measurement of dielectric constants at low frequenciesis easily done by measuring the capacitance of a substrateof known dimensions and calculating the dielectric constant.The resonance method is used in measuring dielectricconstants at microwave frequencies of metallized ceramicsubstrates. This is based on the model of the high dielectricconstant substrate as a parallel plate dielectrically loadedwaveguide resonator. By observing the resonant frequenciesand knowing the dimensions of the substrate, the dielectricconstant is calculated by fitting the resonances into a tableof expected fundamental and higher order modes. Thismethod can be measured by connecting the corners of thesubstrates to the center conductors of either an APC-7 orType N connector. The test setup is the same as for insertionloss measurements. This method as described in the litera-ture for an alumina substrate with a dielectric constant ofapproximately 10 and a substrate height of 0.025 inches canbe measured to an accuracy of 2%. The Napoli-HughesMethod uses an open circuit assumption for the unmetallizededges which can be radiative. This inaccuracy is reduced ifthinner substrates or if higher dielectric constant substratesare used which will tend to reduce radiation. Higher accuracycan be achieved by metallizing all six sides of the substrateexcept for the corners where the RF is coupled to the sub-strate. This method as reported by Howell provided moreconsistent results.

m = 2

m = 1

m = 0

n = 1 2 3 4

2f0

2LW___ f0

W___ f0L

f0

AUTOTESTER DETECTOR

FROMSWEEPGENERATOR

SCALARANALYZER

Figure 12

Dispersion Curve of a Rectangular Resonator

Figure 13

Test Configuration for Resonance Measurements


22

Introduction toMicrowave CapacitorsTransmission Lines

Propagation Constant andCharacteristic ImpedanceThe incident waves of voltage and current decrease in mag-nitude and vary in phase as one goes toward the receivingend of the transmission line which has losses. The propaga-tion constant is a measure of the phase shift and attenuationalong the line.

• attenuation per unit length of line is called the attenuationconstant. (dB or nepers per unit length)

• phase constant, phase shift per unit length. (radians perunit length)

• angular frequency, 2 * pi * f(R+jwL) - complex series impedance per unit length of line.(G+jwC) - complex shunt admittance per unit length of line.Eq. 13. Z0 � for lossless case: Z0 =

Figure 14

This figure shows generation of standing waves on a short-ed transmission line. Dotted lines to the right of the short cir-cuit represent the distance the wave would have traveled inabsence of the short. Dotted vectors represent the reflectedwave. The heavy solid line represents the vector sum of theincident and refected waves. (d) and (e) represent instanta-neous voltages and currents at different intervals of time.

Standing WavesStanding waves on the lossless transmission line:An incident wave will not be reflected if the transmission lineis terminated in either matched load or if the transmission lineis infinitely long. Otherwise, reflected waves will be present.In other words, any impedance will cause reflections.Let us consider the case of a lossless transmission line ter-minated in a short line. In this case all of the incident wavewill be reflected. See Figure 15.The dotted sine wave to the right of the short circuit in thediagram indicates the position and distance the wave wouldhave traveled in the absence of the short circuit. With theshort circuit placed at X, the wave travels the same distanceback toward the generator. In order to satisfy the boundaryconditions, the voltage at the short circuit must be zero at alltimes. This is accomplished by a reflected wave which isequal in magnitude and reversed in polarity (shown by thesuperimposed reflected wave and the resultant total voltageon the line). Note that the total voltage is twice the amplitudeof the incident voltage at a quarter wavelength back towardthe generator and the total voltage is zero at one-half wave-length from the short.

Figure 15

Figure 16

VI

X

DISTANCE ALONG LINE

PURE TRAVELING WAVE

AMPLITUDE

V = Instantaneous voltageI = Instantaneous current

Pure traveling waves: V & I in the lossless case are in phase.

V & I also reverse polarity every half wavelength.

+

-

r�x l�xg�x c�x

�x

DISTRIBUTED PARAMETER MODELOF A SECTION OF TRANSMISSION LINES:

�X

G = Conductance per unit lengthR = Resistance per unit lengthC = Capacitance per unit lengthL = Inductance per unit length = Incremental length

where

11

12

10

E1

Ei

E1

Er

2Ei

1 3

3

3

2

2

2 4

4

2

2

3 1

13

4

4

3

2

DX

WAVECIRCUIT

(a)

(b)

(c)

(d) (e)

RESULTANT

RESULTANT

SHORT

SHORT

SHORT

7

65432

1

1

23456

7

1

23456

7

7

65432

1

2E1

5

6

� L⁄C

23

Introduction toMicrowave CapacitorsTransmission Lines

Figure 17

Figure 18

The total voltage pattern is called a standing wave. Standingwaves exist as the result of two waves of the same frequencytraveling in opposite directions on a transmission line.The total voltage at any instant has a sine wave distributionalong the line with zero voltage at the short and zero points athalf wave intervals from the short circuit. The points of zerovoltages are called voltage nodes and the points of maximumvoltage halfway between these nodes are called antinodes.

Open Circuit:At a distance of one-quarter wavelength from the short, thevoltage is found to be twice the amplitude of the incidentvoltage, which is equivalent to an open circuit. Therefore, thissame distribution would be obtained if an open circuit wereplaced a quarter wavelength from the short. In the case thefirst node is located a quarter wavelength from the open andthe first antinode is right as the open. The node-to-nodespacing remains half wavelength as is the antinode-to-antinodespacing.

Voltage Standing Wave Ratio:The voltage standing wave ratio is defined as the ratio of themaximum voltage to the minimum voltage on a transmissionline. This ratio is most frequently referred to as VSWR (Viswar).

Eq. 14. VSWR =Emax

=Ei + Er =

1 + RhoEmin Ei - Er 1 - Rho

where Rho = reflective coefficientIf the transmission line is terminated in a short or open circuit,the reflected voltage, Er, is equal to the incident voltage, Ei.From the above equation the reflection coefficient is 1.0, andthe VSWR is infinite. If a matched termination is connected tothe line, the reflected wave is zero, the reflection coefficient iszero, and the VSWR is zero.

TWOWIRE

MICROSTRIPCOAXIAL

RECTANGULARWAVEGUIDE

RIDGEDWAVEGUIDE

CIRCULARWAVEGUIDE

CROSS SECTIONAL CONFIGURATIONS OFVARIOUS TYPES OF GUIDING STRUCTURES

FIELD ORIENTATION OF A COAXIAL LINE

DIRECTION OF PROPAGATION

I E H

V ±•

24

Microwave Integrated Circuit HybridsA Microwave Integrated Circuit Hybrid (MIC) is a microwavecircuit that uses integrated circuit production techniquesinvolving such factors as thin or thick films, substrates,dielectrics, conductors, resistors, and microstrip lines, tobuild passive assemblies on a dielectric. Active elementssuch as microwave diodes and transistors are usually addedafter photo resist, masking, etching, and deposition process-es have been completed. MICs usually are enclosed asshielded microstrip to prevent electromagnetic interferencewith other components or systems. This section will discusssome of the important characteristics of MICs, such as:

• MIC substrates • MIC metallization• MIC components

MIC Substrates:Microstrip employs circuitry that is large compared to thewavelength of the frequency used with the circuit. For thisreason, the etched metal patterns often are distributed cir-cuits with transmission lines etched directly onto the MICsubstrate. Figure 19 shows the pertinent dimensional para-meters for a microstrip transmission line.For the current discussion we are most interested in the high-er microwave frequencies. The MIC circuit design requires a uniform and predictable substrate characteristic. Severaltypes of substrates in common usage are: alumina, sapphire,quartz, and beryllium oxide. Key requirements for a MIC sub-strate are that it have:

• Low dielectric loss• Uniform dielectric constant• Smooth finish• Low expansion coefficient

Figure 19. MIC Microstrip Outline

The characteristic impedance of the microstrip line is depen-dent primarily on the following:• Width of the conductor: Increase in the width “W” of the

conductor will decrease the ZO of the microstrip line.• Height of the substrate: Increase in the height “H” of the

substrate will increase the ZO of the microstrip line.

• Dielectric Constant: Increase of the dielectric constant ofthe substrate will decrease the ZO of the microstrip line.

Table II shows a brief listing of substrate properties.

Table II

The dependence of ZO to the above parameters is as shown:Eq. 15. ZO(f) = 377 * H/(W)/Sqrt (Er)

where, H = height of the substrateW = width of the microstrip

conductorEr = dielectric constant of the

substrateA graph of ZO versus W/H for several values of dielectricconstants is shown below:

Figure 20

The most popular substrate material is alumina which has adielectric constant of between 9.6 and 10.0 depending onthe vendor and the purity. Other substrates are used wherethe specified unique properties of the material (beryllia forhigh power, ferrites for magnetic properties) are demandedby design.

2.3

2.55

4.8

6.8

10

Z0

- M

ICR

OS

TRIP

IMP

ED

AN

CE

(�)

MICROSTRIP W/H

10050403020.1 .2 .3 .4 .5 1 2 3 4 5 7.5 10

1000

500400300

200

100

5040

30

20

10

54

3

2

1

STRIPCONDUCTOR

h

W

DIELECTRIC

GROUND PLANE

Material Alumina Sapphire Quartz BerylliumOxide

Relative 9.8* 11.7 3.8 6.6DielectricConstant, Er

Loss 0.0001 0.0001 0.0001 0.0001Tangent at10 GHz

Thermal 0.3 0.4 0.01 2.5ConductivityK, in W/CM/Deg. C

*Alumina Er depends on vendor and purity.

Introduction toMicrowave CapacitorsIncorporation of Capacitors into Microwave Integrated Circuit Hybrids

25

MIC Metallization:MIC metallization is a thin film of two or more layers of met-als. A base metallization layer is deposited onto the sub-strate, another layer may be optionally deposited on top ofthis, and then a final gold layer is deposited onto the surface.The base metallization is chosen for its adhesion to the sub-strate and for compatibility with the next layer.The base metallization is usually lossy at microwave fre-quencies. The losses due to this metallization can be kept toa minimum if its thickness does not exceed one “skin depth”of the metal.Skin effect defines a phenomenon at microwave frequencieswhere the current travelling along a conductor does not pen-etrate the conductor but remains on the surface of the con-ductor. The “skin depth” indicates how far the microwavecurrent will penetrate into the metal. The “skin depth” issmaller as the frequency increases.By keeping the lossy metallization as thin as possible, moreof the microwave current will propagate in the top metalliza-tion gold layer and loss is minimized.Typical metallization schemes used in the industry are:

• Chromium-Gold: Cr-Au • Nichrome-Gold: NiCr-Au • Chromium-Copper-Gold: Cr-Cu-Au • Titanium-Tungsten-Gold: TiW-Au • Others

MIC Components:Microstrip has advantages over other microwave circuittopologies in that active semiconductors and passive com-ponents can easily be incorporated to make active hybridcircuits. It is possible to mix high and low frequency circuitryto attain a “system-on-a substrate.”

Passive Components:On MIC circuits, the passive components are either distrib-uted or lumped elements. The distributed components areusually realized by etched patterns on the substrate metal-lization. The lumped components are capacitors, resistors,and inductors; and whenever possible components arederived by etching them directly on the MlC metallization thinfilm. Chip components are used when they offer advantagessuch as:• Component values are beyond that realizable by thin film

techniques on the MIC substrates,• Smaller size is required,• High power capability is required.Capacitors, resistors, and inductors are discussed in the following:

Capacitors:A lumped capacitor can be realized by the parallel gapcapacitance of an area of metallization on the top of the sub-strate to the ground plane. Values of capacitance that can beobtained by this method are usually less than a few pico-farads. At microwave frequencies if the capacitor size in anyone dimension begins to approach a quarter-wavelength, aresonance will occur.Large values of capacitance can be achieved with a dielec-tric constant between the capacitor plates while maintainingthe small size required for MIC circuits.Chip capacitors can be fabricated on substrate with a dielec-tric constant up to 5000. This higher dielectric constantallows a much smaller size capacitor for a given capacitancevalue which is a very desirable feature both from the realestate aspect and the self-resonance aspect.

Resistors:MIC resistors are often realized by using a resistive base layeron the MIC substrate metallization, and by etching the prop-er pattern to expose the resistive layer in the MIC circuitry.The exact value of the resistor is determined by:

• resistivity of the resistive base layer, and• length and width of the resistor.

Thin film resistive base layers are usually the following:• tantalum nitrite, or• nickel-chrome (nichrome).

When chip resistors are used, they are mounted and con-nected in the same way as the chip capacitors.Inductors:Inductors are often realized by using narrow etchedmicrostrip lines which provides inductance on the order of1 to 5 nanohenrys.Higher values up to 50 nanohenrys are obtained by etchinga round or square spiral onto the MIC metallization.Even higher values can be obtained by using wound wireinductors or chip inductors which are wire coils encased in aceramic.Both types of discrete inductors are attached to the circuitby the same means as the capacitors.


26

Active components:The active devices in the MIC circuit can be made of entirelydifferent materials than the substrates and are usuallyattached to the substrates by eutectic soldering or conduc-tive epoxy.Typical active devices on MIC circuits are the following:

• GaAs FETs • Bipolar Transistors • Schottky Barrier Diodes • PIN Diodes • Various other Semiconductors

The active devices can be either in:• a plastic or ceramic package with metal leads, or• chip form.

The packaged devices are commonly used at a lowerfrequency range than the chip devices since they exhibitmore parasitic circuit elements that limit their performance athigher frequency.The advantages of packaged devices are protection of thedevices during transport and mounting, ease of characteri-zation, and ease of mounting onto the MIC circuit.

Chip Component Attach:The methods of attachment of the chip components to thesubstrate are usually by:

• eutectic solder die attach, and• epoxy die attach.

1. Eutectic Die AttachThe eutectic die attach method can be used with severalalloys. Eutectic defines the exact alloy combination at whichthe solidus to liquidus transition takes place at one particular

temperature. Other combinations have transition states withwider temperature ranges. For instance, the eutectic tem-perature for the following alloys are:

Table III

For best results, the eutectic attach is performed under aninert gas atmosphere, typically nitrogen, to reduce oxidationat high temperatures. The eutectic must be selected so thatthe die attach operations will not interfere with prior solder-ing operations and itself will not be disturbed by subsequentprocess steps. The metallization should be able to undergo400°C without any blistering or other adhesion degradation.2. Epoxy Die AttachThe epoxy die attach method uses silver or gold conductiveparticles in an epoxy. The epoxy for chip attach on MIC circuits is a one-part type which cures at temperatures of from125°C to 200°C. The curing time is a function of temperature.A cure time of 30 minutes at 150°C is a good compromise forhigh reliability and a reasonable cure time.

Chip Components Interconnection:The chip components are interconnected to the MIC circuitby means of:

• wire bonding, and• miniature parallel gap welding.


AlloyEutectic Eutectic

Composition Temperature

Gold Germanium 88% Au 12% Ge 356°CGold Tin 80% Au 20% Sn 280°C

S-OPT0M0217-C

A KYOCERA GROUP COMPANY

http://www.avx.com

Contact:

AVX Greenville, SCTel: 864-967-2150

AVX Limited, EnglandTel: +44-1252-770000

AVX S.A.S., FranceTel: +33-1-69-18-46-00

AVX GmbH, GermanyTel: +49-0811-95949-0

AVX SRL, ItalyTel: +39-02-614-571

AVX Czech RepublicTel: +420-57-57-57-521

AVX/ELCO UKTel: +44-1638-675000

ELCO Europe GmbHTel: +49-2741-299-0

AVX S.A., SpainTel: +34-91-63-97-197

AVX BeneluxTel: +31-187-489-337

AVX/Kyocera (S) Pte Ltd.,Singapore

Tel: +65-6286-7555

AVX/Kyocera, Asia, Ltd.,Hong Kong

Tel: +852-2363-3303

AVX/Kyocera Yuhan Hoesa,South Korea

Tel: +82-2785-6504

AVX/Kyocera HK Ltd., Taiwan

Tel: +886-2-2656-0258

AVX/Kyocera (M) Sdn Bhd,Malaysia

Tel: +60-4228-1190

AVX/Kyocera InternationalTrading Co. Ltd.,

ShanghaiTel: +86-21-3255 1933

AVX/Kyocera Asia Ltd.,Shenzen

Tel: +86-755-3336-0615

AVX/Kyocera InternationalTrading Co. Ltd.,

BeijingTel: +86-10-6588-3528

AVX/Kyocera India Liaison Office

Tel: +91-80-6450-0715

AMERICAS EUROPE ASIA-PACIFIC

KED Hong Kong Ltd.Tel: +852-2305-1080/1223

KED Hong Kong Ltd.Shenzen

Tel: +86-755-3398-9600

KED Company Ltd.Shanghai

Tel: +86-21-3255-1833

KED Hong Kong Ltd.Beijing

Tel: +86-10-5869-4655

KED Taiwan Ltd.Tel: +886-2-2950-0268

KED Korea Yuhan Hoesa,South Korea

Tel: +82-2-783-3604/6126

KED (S) Pte Ltd.Singapore

Tel: +65-6509-0328

Kyocera CorporationJapan

Tel: +81-75-604-3449

ASIA-KED(KYOCERA Electronic Devices)

optical 16.11_66782 slc catalog

Documents