mosfet cfda automotive - infineon technologies

MOSFETMetalOxideSemiconductorFieldEffectTransistor

CFDAAutomotive650VCoolMOS™CFDAPowerTransistorIPD65R420CFDA

DataSheetRev.2.1Final

Automotive

2

650VCoolMOS™CFDAPowerTransistor

IPD65R420CFDA

Rev.2.1,2015-02-11Final Data Sheet

tab

12

3

DPAK

DrainPin 2

GatePin 1

SourcePin 3

1DescriptionCoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.650VCoolMOS™CFDAseriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.TheresultingdevicesprovideallbenefitsofafastswitchingSJMOSFETwhileofferinganextremelyfastandrobustbodydiode.Thiscombinationofextremelylowswitching,commutationandconductionlossestogetherwithhighestrobustnessmakeespeciallyresonantswitchingapplicationsmorereliable,moreefficient,lighter,andcooler.

Features•Ultra-fastbodydiode•Veryhighcommutationruggedness•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss•Easytouse/drive•QualifiedaccordingtoAECQ101•Greenpackage(RoHScompliant),Pb-freeplating,halogenfreeformoldcompound

Applications650VCoolMOS™CFDAisdesignedforswitchingapplications.

Table1KeyPerformanceParametersParameter Value UnitVDS 650 V

RDS(on),max 0.42 Ω

Qg,typ 90 nC

ID,pulse 80 A

Eoss @ 400V 2.8 µJ

Body diode di/dt 500 A/µs

Qrr 0.7 µC

trr 140 ns

Irrm 8.8 A

Type/OrderingCode Package Marking RelatedLinksIPD65R420CFDA PG-TO 252 65F420A -

3


IPD65R420CFDA


TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

4


IPD65R420CFDA


2MaximumratingsatTj=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current1) ID 8.7 A TC=25°C

5.5 TC=100°C

Pulsed drain current2) ID‚pulse 27 A TC=25°C

Avalanche energy, single pulse EAS 227 mJ ID=1.8A,VDD=50V

Avalanche energy, repetitive EAR 0.34 mJ ID=1.8A,VDD=50V

Avalanche current, repetitive IAR 1.8 A

MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...400V

Gate source voltage VGS -20 20 V static

-30 30 AC (f > 1 Hz)

Power dissipation (SMD)DPAK Ptot 83.3 W TC=25°C

Operating and storage temperature Tj‚Tstg -40 150 °C

Continuous diode forward current IS 8.7 A TC=25°C

Diode pulse current IS‚pulse 27 A TC=25°C

Reverse diode dv/dt3) dv/dt 50 V/ns VDS=0...400V,ISD≤ID,Tj=25°CMaximum diode commutation speed dif/dt 900 A/µs

1) Limited by Tj max2) Pulse width tp limited by Tj max3) Identical low side and high side switch with identical RG

5


IPD65R420CFDA


3ThermalcharacteristicsTable3ThermalcharacteristicsDPAK

ValuesMin. Typ. Max.

Parameter Symbol Unit Note/TestCondition

Thermal resistance, junction - case RthJC 1.5 K/W

Thermal resistance, junction - ambient1) RthJA 62 K/W SMD version, device on PCB,minimal footprint

35 SMD version, device on PCB, 6cm²cooling area

Soldering temperature, wave- &reflowsoldering allowed Tsold 260 °C reflow MSL

1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection. PCBis vertical without air stream cooling.

6


IPD65R420CFDA


4ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified

Table4StaticcharacteristicsValues


Drain-source breakdown voltage V(BR)DSS 650 V VGS=0V,ID=1mA

Gate threshold voltage VGS(th) 3.5 4 4.5 V VDS=VGS,ID=0.3445mA

Zero gate voltage drain current IDSS 5 µA VDS=650V,VGS=0V,Tj=25°C

600 VDS=650V,VGS=0V,Tj=150°C

Gate-source leakage current IGSS 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on) 0.378 0.42 Ω VGS=10V,ID=3.4A,Tj=25°C

0.983 VGS=10V,ID=3.4A,Tj=150°C

Gate resistance RG 4 Ω f=1MHz,opendrain

Table5DynamiccharacteristicsValues


Input capacitance Ciss 870 pF VGS=0V,VDS=100V,f=1MHz

Output capacitance Coss 45 pF

Effective output capacitance, energyrelated1) Co(er) 36 pF VGS=0V,VDS=0...400V

Effective output capacitance, timerelated2) Co(tr) 161 pF ID=constant,VGS=0V,

VDS=0...400V

Turn-on delay time td(on) 10 ns VDD=400V,VGS=13V,ID=5.2A,RG=3.4Ω

Rise time tr 7 ns

Turn-off delay time td(off) 38 ns

Fall time tf 8 ns

Table6GatechargecharacteristicsValues


Gate to source charge Qgs 5.5 nC VDD=480V,ID=5.2A,VGS=0to10VGate to drain charge Qgd 17.5 nC

Gate charge total Qg 32 nC

Gate plateau voltage Vplateau 6.4 V

1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400V2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400V

7


IPD65R420CFDA


Table7ReversediodecharacteristicsValues


Diode forward voltage VSD 0.9 V VGS=0V,IF=5.2A,Tj=25°C

Reverse recovery time trr 90 ns VR=400V,IF=5.2A,diF/dt=100A/µs(see table 8)Reverse recovery charge Qrr 0.3 µC

Peak reverse recovery current Irrm 6.2 A

8


IPD65R420CFDA


5Electricalcharacteristicsdiagrams

Powerdissipation

TC[°C]

Ptot[W

]

0 40 80 120 1600

10

20

30

40

50

60

70

80

90

Ptot=f(TC)

Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-110-2

10-1

100

1010.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC=f(tP);parameter:D=tp/T

Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-2

10-1

100

101

102

1 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=25°C;D=0;parameter:tp

Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-2

10-1

100

101

102

1 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=80°C;D=0;parameter:tp

9


IPD65R420CFDA


Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

5

10

15

20

25

30

3520 V

10 V

8 V

7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=25°C;parameter:VGS

Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

2

4

6

8

10

12

14

16

18

2020 V

10 V

8 V

7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=125°C;parameter:VGS

Typ.drain-sourceon-stateresistance

ID[A]

RDS(on

) [Ω]

0 6 12 18 240.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

5 V

5.5 V

6 V

6.5 V

7 V

10 V

RDS(on)=f(ID);Tj=125°C;parameter:VGS

Typ.drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [Ω]

-40 0 40 80 1200.0

0.2

0.4

0.6

0.8

1.0

1.2typ

RDS(on)=f(Tj);ID=18.1A;VGS=10V

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IPD65R420CFDA


Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 8 100

5

10

15

20

25

30150 °C

25 °C

ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj

Typ.forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.5 1.0 1.5 2.010-1

100

101

102125 °C

25 °C

IF=f(VSD);parameter:Tj

Typ.gatecharge

Qgate[nC]

VGS [V]

0 10 20 30 400

1

2

3

4

5

6

7

8

9

10120 V

480 V

VGS=f(Qgate);ID=5.1Apulsed;parameter:VDD

Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-40 0 40 80 120540

560

580

600

620

640

660

680

700

720

740

760

VBR(DSS)=f(Tj);ID=0.25mA

11


IPD65R420CFDA


Avalancheenergy

Tj[°C]

EAS [mJ]

25 75 1250

50

100

150

200

250

EAS=f(Tj);ID=1.8A;VDD=50V

Typ.capacitances

VDS[V]

C[p

F]

0 100 200 300 400 500 600100

101

102

103

104Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=1MHz

Typ.Cossstoredenergy

VDS[V]

Eoss[µ

J]

0 100 200 300 400 500 6000

1

2

3

4

5

6

Eoss=f(VDS)

12


IPD65R420CFDA


6TestCircuits

Table8DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform

t

V ,I

Irrm

IF

VDS

10 %Irrm

trrtF tS

QF QS

dIF / dt

dIrr / dt

VDS(peak)

Qrr = QF +QS

trr =tF +tS

VDS

IF

VDS

IF

Rg1

Rg 2

Rg1 = Rg 2

Table9SwitchingtimesSwitching times test circuit for inductive load Switching times waveform

VDS

VGS

td(on) td(off)tr

ton

tf

toff

10%

90%

VDS

VGS

Table10UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform

VDS

V(BR)DS

IDVDS

VDSID

13


IPD65R420CFDA


7PackageOutlines

Figure1OutlinePG-TO252,dimensionsinmm/inches

14


IPD65R420CFDA


RevisionHistoryIPD65R420CFDA

Revision:2015-02-11,Rev.2.1

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2012-07-12 Preliminary

2.1 2015-02-11 Correction of Marking Code

DisclaimerATV

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Edition2011-09-30PublishedbyInfineonTechnologiesAG81726München,Germany©2011InfineonTechnologiesAGAllRightsReserved.

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mosfet cfda automotive - infineon technologies

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