mosfet bare die - infineon technologies
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MOSFETMetalOxideSemiconductorFieldEffectTransistor
BareDieOptiMOS™3PowerMOSTransistorChipIPC171N04N
DataSheetRev.2.5Final
Industrial&Multimarket
2
OptiMOS™3PowerMOSTransistorChip
IPC171N04N
Rev.2.5,2014-06-21Final Data Sheet
PowerMOSTransistorChip
Drain
Gate
Source
1Description•N-channelenhancementmode•FordynamiccharacterizationrefertothedatasheetofIPB021N04NG•AQL0.65forvisualinspectionaccordingtofailurecatalogue•ElectrostaticDischargeSensitiveDeviceaccordingtoMIL-STD883C•Diebond:solderedorglued•Backsidemetallization:NiVsystem•Frontsidemetallization:AlSisystem•Passivation:nitride(onlyonedgestructure)
Table1KeyPerformanceParametersParameter Value UnitV(BR)DSS 40 V
RDS(on) 2.11) mΩ
Die size 5.9 x 2.95 mm2
Thickness 205 µm
Type/OrderingCode Package Marking RelatedLinksIPC171N04N Chip not defined -
2ElectricalCharacteristicsonWaferLevelatTj=25°C,unlessotherwisespecified
Table2Values
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Drain-source breakdown voltage V(BR)DSS 40 - - V VGS=0V,ID=1mA
Gate threshold voltage VGS(th) 2.1 3.0 4.0 V VDS=VGS,ID=150µA
Zero gate voltage drain current IDSS - 0.1 1 µA VGS=0V,VDS=40V
Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V
Drain-source on- resistance RDS(on) - 1.12) 1003) mΩ VGS=10V,ID=2.0A
Reverse diode forward on-voltage VSD - 1.0 1.3 V VGS=0V,IF=1A
1) packaged in a P-TO263-7 (see ref. product)2)typicalbaredieRDS(on);VGS=10Vwhenusedwith4x500µmAl-wedgebonding3) limited by wafer test-equipment
3
OptiMOS™3PowerMOSTransistorChip
IPC171N04N
Rev.2.5,2014-06-21Final Data Sheet
3PackageOutlines
Figure1OutlineChip,dimensionsinµm
4
OptiMOS™3PowerMOSTransistorChip
IPC171N04N
Rev.2.5,2014-06-21Final Data Sheet
RevisionHistoryIPC171N04N
Revision:2014-06-21,Rev.2.5
Previous Revision
Revision Date Subjects (major changes since last revision)
2.5 2014-06-21 Release of Final Version
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WarningsDuetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice.TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.