advisor: 吳坤憲 number:4990h003 student: 張有成 rutherford backscattering spectrometry...

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Advisor: 吳吳吳 Number:4990h003 Student: 吳吳吳 therford Backscattering Spectromet 吳吳吳吳吳吳吳吳

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Page 1: Advisor: 吳坤憲 Number:4990h003 Student: 張有成 Rutherford Backscattering Spectrometry 拉塞福回向散射儀

Advisor: 吳坤憲Number:4990h003Student: 張有成

Rutherford Backscattering Spectrometry拉塞福回向散射儀

Page 2: Advisor: 吳坤憲 Number:4990h003 Student: 張有成 Rutherford Backscattering Spectrometry 拉塞福回向散射儀

Outline

• History• Structure• Application• Conclusion• References

Page 3: Advisor: 吳坤憲 Number:4990h003 Student: 張有成 Rutherford Backscattering Spectrometry 拉塞福回向散射儀

History

Ernest Rutherford, 1st Baron Rutherford of Nelson,  (30 August 1871 – 19 October 1937) was a New Zealand-born physicist who became known as the father of nuclear physics .

Page 4: Advisor: 吳坤憲 Number:4990h003 Student: 張有成 Rutherford Backscattering Spectrometry 拉塞福回向散射儀

What is Backscattering

Backscattering

Page 5: Advisor: 吳坤憲 Number:4990h003 Student: 張有成 Rutherford Backscattering Spectrometry 拉塞福回向散射儀

What is Rutherford Backscattering Spectrometry

Rutherford backscattering spectrometry (RBS) is used to determine the structure and composition of materials by measuring the backscattering of a beam of high energy ions impinging on a sample.

Page 6: Advisor: 吳坤憲 Number:4990h003 Student: 張有成 Rutherford Backscattering Spectrometry 拉塞福回向散射儀

Structure

Page 7: Advisor: 吳坤憲 Number:4990h003 Student: 張有成 Rutherford Backscattering Spectrometry 拉塞福回向散射儀

Structure

Page 8: Advisor: 吳坤憲 Number:4990h003 Student: 張有成 Rutherford Backscattering Spectrometry 拉塞福回向散射儀

Application

• The Rutherford Backscattering Spectrometry can be used in:• (a) Measure the film thickness.• (b) Measure the doping profiling.• (c) Determined the composition ratio of the elements.• (d) Observation the material cause migration phenomenon

Page 9: Advisor: 吳坤憲 Number:4990h003 Student: 張有成 Rutherford Backscattering Spectrometry 拉塞福回向散射儀

Application

Page 10: Advisor: 吳坤憲 Number:4990h003 Student: 張有成 Rutherford Backscattering Spectrometry 拉塞福回向散射儀

Conclusion

• A sample measuring only spend to 10-20 min.• RBS can measured the film thickness and doping profiling.• Can be measured Au,As,Mo volume in Si semiconductor.• The computer software can simulate the RBS spectra.

Page 11: Advisor: 吳坤憲 Number:4990h003 Student: 張有成 Rutherford Backscattering Spectrometry 拉塞福回向散射儀

Shortcoming

• The equipment is expensive.• Don’t measuring the light element.• If the value K is too close to be measuring of the heavy element.

Page 12: Advisor: 吳坤憲 Number:4990h003 Student: 張有成 Rutherford Backscattering Spectrometry 拉塞福回向散射儀

References• 拉塞福背向散射 : http://www.phys.sinica.edu.tw/~ibalab/RBS/RBS.htm • 材料分析 主編 : 汪建民• Applying ion beam analysis: http://www.hzdr.de/db/Cms?pOid=29856&pNid=0 • 維基百科 -Ernest Rutherford : http://en.wikipedia.org/wiki/Ernest_Rutherford• SUPPORT OF PUBLIC AND INDUSTRIAL RESEARCH USING ION BEAM TECHNOLOGY: http://www.spirit-ion.eu/v1/Project/Techniques/RBS.html• 清華大學加速器實驗室• 申請單網址 : http://acc.web.nthu.edu.tw/files/87-1080-114.php

• E-mail: [email protected]