WP6 status report

A. Di Mauro (CERN)ITS plenary meeting 20.01.2014

WP6 status report - A. Di Mauro 2

Outline

• Update on development of FPC in Al• Summary of proposal of an automated HIC

assembly system from VEA• Planning of 2014 WP6 objectives

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WP6 status report - A. Di Mauro

Status of Al-FPC R&D• 7 prototypes have been etched

using DEPHIS Al-coated kapton (the first was shown in December); however last step (Ni/Au coating of contacts) failed due to issues with quality of Al layer (too porous). New foils are being prepared by DEPHIS by improving the Al processing.

• Two kapton foils coated (with 25 mm Al) by FHR were delivered last week and will be processed in the next two weeks.

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Al-FPC deformation- Nominal distance between first and last contact: 268.800 mm- Metrology checks along 5 trace lines

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C1

C2 C3

C4

C5

C6 C7

C9

C10 C11

C13

C14 C15

C17

C18 C19

C20

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Al-FPC deformation

- Al coating and subsequent steps produce shrinking (observed up to ~400 mm):- Cu FPC (12/09/2013):

268.822, 268.827, 268.838, 268.824, 268.827- Al FPC (DEPHIS prototype, after etching, 16/12/2013):

268.562, 268.575, 268.545, 268.565, 268.528- Al FPC (FHR 15μm Al, before etching, 07/01/2014):

268.405, 268.396, 268.379, 268.366, 268.384- After finalization of the production procedure, will study various

solutions depending on reproducibility of effect and final deviation from nominal value:- Pad diameter larger than FPC holes (e.g., 250 mm pad can compensate

100 mm over 9 chip flex) - Modify holes position when drilling in order to achieve final nominal

values- Compensate by suitable adjustment of chips gap (variation of chips

position HIC by HIC!)

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Automated HIC assembly system from VEA

• The proposal has been reviewed and the system is conform to our requirements and suitable to the purpose.

• The main constraints are precision (final chip position tolerance ~ 5-10 mm) and time

• In order to achieve the required accuracy and repeatability Linear Positioning Stages (X,Y,Z) have been preferred to robotic arms (faster but less precise)

• The structures are simple and also the mathematical model to compensate errors due to thermal expansion is quite simple

• This machine allows the assembly of both modules for the inner layer (1 x 9 chips) and for the outer layer (2 x 7 chips) by simple replacement of the "assembly frame", the "FPC stack" and the “soldering balls grid“.

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TOP VIEW

SIDE VIEW

X or Y Linear Positioning Stage- 200 mm/s- 0.05 mm unidirectional repeatability- 0.2 mm bidirectional repeatability

7

Z LPS with 0,1 μm unidirectional repeatability

Automated HIC assembly system from VEA

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Automated HIC assembly system from VEA

Ultra high-precision rotation stage- ± 1.7 mrad (0.0001o) repeatability

The assembly frame is positioned on a high precision rotation stage and it has vacuum suction to hold components.

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Automated HIC assembly system from VEACycle time estimation

Phase Normal time (s)

Pessimistic time

(s)

Chip placement 5.5 8.1

FPC placement 5.8 8.5

Soldering balls grid placement 5.8 8.5

Soldering balls placement (group of 22) 3.8 10.5

Laser soldering (time per contact) 5 10

Worst case scenarios:- 9 chips → 9x8.1 + 8.5 + 8.5 + 9x(4x10.5) + 9x(88x10) = 8388” = ~ 2 h 20’- 2x7 chips → 14x8.1 + 8.5 + 8.5 + 14x(4x10.5) + 14x(88x10) = 13039” = ~ 3 h 38’

Assuming 48+10% HICs for IB and 1604+10% HICs for OB and 16 h/ working day:8 days for IB + 397 days for OB

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2014 WP6 objectives

20/01/2014

Task WP6 specific topic/ issue

Resource Milestone (TBC)

Finalization of IB geometry (with inputs from WP1 and WP2) and layout (with WP9 and WP10)

FPC extension for E-o-C row

A. JuniqueA. Di MauroC. Gargiulo

Mar 14

Finalization of design and characterization of FPC

- Al coating/etching- Trace params and

routing- Power and signal

connection

A. JuniqueM. Keil

Jun 14

Development of HIC assembly and test procedure and set-up (with WP4 and WP7-8)

Automated system

J. Van Beelen P. Ijzermans P. RiedlerA. Di Mauro

Jul 14

Development of prototype of IB staves based on “pad chips”, dimensional survey and characterization (mechanical and thermal) (joint project with WP9)

Sep 14

Development and characterization of stave based on FS-ALPIDE.

Nov 14

Document on dimensional and position survey procedure (joint with WP7, WP8 and WP9)

Nov 14

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WP6 meetings

Weekly on Thursdays, 15:30 (Geneva Time) At CERN: 4-S-030

Next Meeting: Jan 30

20/01/2014