soldier systems center mit lincoln laboratory darpa darpa - mto 3d circuit integration technology...
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Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTO
3D Circuit Integration Technology for Multiproject Fabrication
Program Kickoff
7 April 2000
L-325, MIT Lincoln Laboratory
IntroductionOriginal Program Review
New Program EffortLisa McIlrath 8:30-10:00
Break and Camera Demonstration
Advanced Photodiode Development:
150mm Wafer Transfer Effort:
Purchase of Wafer Aligner/Bonder:
3-D Via Topologies:
Introduction: New Lincoln Effort:
Schedule:
James Burns 10:45-11:00
Keith Warner 11:00-11:15
Craig Keast 10:30-10:45
Craig Keast 11:50-12:00
Peter Wyatt 11:30-11:50
Andy Loomis 11:15-11:30
Lunch and Discussion: All 12:00-1:00
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTO
3D Circuit Integration Technology for Multiproject Fabrication
TREX Enterprises:
System Integration
New Research in 3D Architectures and Systems
Break and Camera Demonstration
New Program Overview:
High Resolution Camera Design:
Summary of Prior Results:
Algorithms for Activity Detectionwith 3D Sensors:
Lisa McIlrath 9:00-9:30
Steve Hawley 9:30-9:50
Lisa McIlrath 8:40-9:00
Victor Lum 9:50-10:05
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTON1 3D Photodiode Active Pixel
• 10m via• 32m x 37m pixel area
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTO3D Transfer/Via SEMs - 9/98
Deep and shallow 10m vias - top view
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTO
Via chainsSample 13-18 B die R3C3 0.01V@100uA comp.
0
500
1000
1500
2000
2500
3000
0 100 200 300 400 500 600
# of vias
Re
sis
tan
ce
6 um deep vias
10um deep vias
6um shallow vias
10um shallow vias
N1 Via Chain Measurements - 9/98
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTON1 Diode Measurements - 9/98Spectral Response of Native and Pwell Diodes
Illuminated Through Backside
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
400 500 600 700 800 900 1000
Wavelength (nm)
Qu
antu
m E
ffic
ien
cy
Native
Pwell
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTO
6 m via on 150mm wafer -- 7/23/99
Adhesive
Oxide
Aluminum
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTOPhotomicrograph of Imager
Metal-1 Pad 3D Via
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTO
N2 2D & 3D Ring Oscillator Measurements
2D and 3D Ring Oscillator Stage DelayL=1 m, W=6, 9 m (N,PFET)
1.00E-10
1.00E-09
1.00E-08
1.00E-07
1.00E-06
1.00E-05
0 1 2 3 4 5 6
Vdd (Volts)
De
lay/
Sta
ge
(s) 2D 33 Stages
2D 65 Stages
3D 17 Stages
3D 33 Stages
3D 65 Stages
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTOFirst 3D 64x64 Imager Results - 9/99
Dark Image Room Light Bright Light
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTONU - LL 3D Technology Transfer
• Wafer-to-wafer bonding process under development at Lincoln Laboratory
• Traveller of NU 3D process delivered to Lincoln• Complete devices from North 3 and 4 runs• Transfer Keith Warner to Lincoln - (task completed)
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTO3D Pixel Design: Free-Running
Sampled Oscillator
1 0 0 0 0 01 1 1
CLK
t
(xmax/x) .
x max
.
A
B
V
V < B ?
A
Iph
V
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTO3D & 2D Pixel Layouts
MOSIS HP 0.5m process30m x 30m pixel
3D SOI-CMOS 0.8m process2-layer 45m x 45m pixel
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTOCircuits / Systems Design Status
Pixel-Parallel A/D Imager Design -- Tests / Design Revs Complete
40nW / pixel @ 3.3V, 0.1% Residual Fixed Pattern Noise
64x6448x48
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTOCircuits / Systems Design Status
3rd Layer Design Taped Out 11/1/99
• On-chip VCO with 216 (65536) bit range• On-chip pixel-parallel 1st stage low pass filtering• Programmable resolution / dynamic range
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTOCircuits / Systems Design
Systems Environment
• Camera demo system modified for 256 x 256 imager compatibility and interface upgrade
• Research in future smart sensor designs:– Video tracking demo (V. Lum, M-Eng thesis)
– Video feedback control architectures (A. Aina, PhD thesis)
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTO
Testbed DemonstrationCamera System
(Demo Setup in Office)
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTOActivity Monitoring
Current image Background model Detected objects
MIT Artificial Intelligence Laboratory
Object Tracking Using Adaptive Background Mixture Models
Courtesy Chris Stauffer & Eric Grimson
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTOAnalog Memory with Digital
Feedback
PixelOscillator
Phase-frequencydetector Change
detector
Adaptive memory
Voltage-ControlledOscillator
A-DataStore
ChargePump
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTOMultimode memory module
Pixel Input F.D.
VCO Charge Pump
Monitor
F.D.
VCO Charge Pump
Monitor
enable
active
enable
active
Problem: VCO tracks new values faster than monitor detects them
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTOCompensated Memory
F.D.
VCO Charge Pump
enable
activePixel InputFilter
Solution: Integrate a low pass filter into the loop
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTOCreating the Filter
F.D.
VCO Charge Pump
enable
active
Pixel Input
Edge Counter
Edge Counter
Edge Counter
reset
reset
reset
CompareLogic
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTODetecting Activity
Pixel Bitstream
VCO output
Input frequencychange
Second unmatched edge
Activity is determined by the temporal distance between pairs of unmatched edges
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTO
• Better circuit / interconnect ratio • “Unrestricted” vertical interconnections between layers• Low digital system power: P=CV2f
The Enabling Technology
High Bandwidth-Processors
Mixed MaterialSystem Integration
LargeFocal Planes
Exploiting DifferentProcess Technologies
AdvancedImaging Technologies
SOI CMOS
3D
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTOPath to Industrialization
Phase I: Infrastructure DevelopmentPhase II: Small Volume 3D Processing
Center for Multi-Project RunsPhase III: High Volume Manufacturing
• Industry-Standard State-of-the-Art SOI/CMOS Process• Automated Wafer Align / Bonding / Interconnect Patterning
Goals:
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTOPhase I Plan (25 months)
• Process Development– 0.8m SOI/CMOS 0.18, 0.25 m FDSOI– Reliable low temperature oxide bonding– High aspect ratio Tungsten plug fill
• Systems Development– High Definition Imager Platform– 3D-compatible near-IR imaging technique– 3D CAD tools packaging
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTO0.25m FDSOI Test Pixel
14m x 14m (or less)
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTOHigh-Resolution Near-IR Imager
• Explore best method for III-V incorporation with automated 3D process technology– Proposal accepted from C. Fonstad, MIT, for selective
InGaAs in Si growth• Initial photodiode array lots for investigation• Imager design unchanged• Compatible with basic platform systems demo
Soldier Systems Center
MIT Lincoln Laboratory
DARPADARPA
DARPA - MTO3D CAD Tools
• Develop minimal toolset for 3D cell layout, design rule checking, netlist extraction
• Interface with commonly available tools, e.g., Magic, L-Edit, Spice
• Platform independent• Remove major obstacle for new users in Phase II• Plan:
– Build on prior work developed on Cadence tools– Negotiate distribution agreement with Si-valley software vendor(s).