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REPLACE SILICON WITH NANOTECHNOLOGY www.Fullinterview.com

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8/6/2019 Replace Silicon With Nano Technology

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REPLACE SILICON WITH

NANOTECHNOLOGY

www.Fullinterview.com

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ABSTRACTA completely new way of designing an

electronic interconnects for nano-scale circuits

using coding theory, by using cross-bar architecture

 Nanotechnology in the crossbar latch could

unleash ³ new functions in a circuit ´ , at suchsizes ³ quantum mechanics takes over ´ and

³electrons behave more like waves than particles´.

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IntroductionIntroductionA new way to design future nano-electronic

circuits using 'coding theory', an approach currently

 being used in certain computer storage andtelecommunications applications. The result could be

nearly perfect manufacturing yields with equipment a

thousand times less expensive than what might be

required using future versions of current technologies.Believe future chips will have to rely, at least in part, on

the 'cross-bar architecture'.

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 Nanotechnology Nanotechnology comprises a wide variety of  

disciplines: chemistry, physics, mechanical

engineering, materials science, molecular biology,and computer science.

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CROSS BAR ARCHITECTURE

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FABRICATION OF CROSS-BAR LATCH

 Nanoscale molecular-

electronic devices

comprising a single

molecular monolayer of 

 bistable rotaxanes

sandwiched between two40-nm metal electrodes

were fabricated using

imprint lithography

An atomic force micrograph of a nanoscale

cross-point molecular device with an insertshowing the details of the cross point

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FUNCTIONS OFCROSS-BAR LATCH

� One of the function is to perform logical operation

like ³AND´ , ³OR´ and ³NOT´ gates.

� The other function is to design a 64 bit

memory,using this cross-bar latch.

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Performance of logic functions

Using electronic devices created by trapping

an electrically switchable layer only a few atoms

thick between crossed wires, a logic function can

 be performed at each intersection of wires.

By applying a sequence of voltage impulses

to the control lines and using switches of opposite

 polarities, the latch can perform the NOT function

essential for general computing operations.

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DESIGN OF 64-BIT MEMORY

The 'highest density

electronically addressable 64-bit 

memory' in a space one micron

square - an area so tiny that more

than 1,000 could fit across the

end of a single strand of humanhair can be seen in this series of 

 pictures, taken with optical and

scanning electron microscopes.

A close-up of a single 64-bit

memory. A bit can be stored

at each of the intersections of 

the eight vertical and eight

horizontal wires

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The crossed-wire structure of the

memory

The wafer on which 625 memories

are imprinted

Fabrication of cross-bar latch as a memory

device

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Conclusion

 Nanotechnology is a future technology,

which enables 'low-cost , high yield fabricationµ .

The crossbar latch design is "well-suited to

tolerate the inevitable defects that are bound to occur 

in the fabrication process at such tiny dimensions" because it doesn't require the same level of precision

as silicon circuits.

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References

[1] Kuekes, Philip J., Duncan R. Stewart and R.

Stanley Williams,´The crossbar latch´ Journal of Applied Physics 97, 034301 (2005).

[2] www.foresight.org.

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