raith eline e-beam writer - purdue university
TRANSCRIPT
Raith eLine E-Beam Writer
Refer to the page for information on materials compatible with this tool.Material and Process CompatibilityEquipment Status: Set as UP, PROBLEM, or DOWN, and report the issue date (MM/DD) and a brief description. Italicized fields will be filled in by BNC Staff in response to issues. See for more info.Problem Reporting Guide
Status UP
Issue Date and Description
Estimated Fix Date and Comment
Responding Staff
Raith eLine E-Beam Writer - Internal Resources
iLab Name Raith eLine E-Beam Writer
iLab Kiosk BRK Lithography Core
FIC Joerg Appenzeller
Owner Bill Rowe
Location BRK 1239
Max. Wafer 4"/100 mm
1 Overview1.1 General Description1.2 Specifications1.3 Technology Overview
2 Sample Requirements and Preparation3 Standard Operating Procedure4 Questions & Troubleshooting5 Process Library6 References
Overview
General Description
The Raith e_LiNE is a 100eV to 30keV system using a Schottky TFE filament with a 20MHz pattern processor. It is ideal for nanotech research in carbon nanotubes and nanowires.
Specifications
Stage travel: 100 mm x 100 mm.Maximum substrate size: 100 mm x 100 mm.Minimum feature size: <20 nm.Minimum beam size: <2 nm.Writing current: 5 pA - 20 nA.
Technology Overview
Sample Requirements and Preparation
Standard Operating Procedure
Questions & Troubleshooting
Process Library
ReferencesRaith eline instructions_ND