r6004enx : transistors -...

Data Sheet

www.rohm.com© 2014 ROHM Co., Ltd. All rights reserved.

R6004ENX Nch 600V 4A Power MOSFET

4) Drive circuits can be simple.

2) Fast switching speed.

Tape width (mm) -

3) Gate-source voltage (VGSS) guaranteed to be 20V.

lApplication

Reel size (mm)

6) Pb-free lead plating ; RoHS compliant

Bulk

-

Type

Packaging

500

Taping code

600V980mW

40W4A

5) Parallel use is easy.

VDSS

RDS(on) (Max.)IDPD

1) Low on-resistance.

lOutline

lInner circuit

lPackaging specifications

TO-220FM

VGSS

8.0

Continuous drain current

Basic ordering unit (pcs)

Pulsed drain current

Gate - Source voltage

Parameter

Tc = 100°C

Switching Power Supply

4.0

Value

Tc = 25°C

Symbol

lAbsolute maximum ratings (Ta = 25°C)

Drain - Source voltage

-

Marking R6004ENX

lFeatures

Unit

600VDSS

ID *1 A

V

V20

V/ns

150

Reverse diode dv/dt

IAR

Range of storage temperature Tstg

Power dissipation (Tc = 25°C)

°C

W

Junction temperature

A

dv/dt *4 15

-55 to +150

ID,pulse *2

ID *1

2.2 A

A

Tj °C

mJEAR *3

Avalanche energy, single pulse

Avalanche energy, repetitive

Avalanche current, repetitive 0.8

EAS *3

0.13

mJ

PD 40

46

(1) (3) (2)

(1) Gate (2) Drain (3) Source

*1 BODY DIODE

1/12 2014.03 - Rev.B


Data SheetR6004ENX

Drain - Source voltage slope dv/dtVDS = 480V

-

Typ.

Symbol Conditions Values

lAbsolute maximum ratings

lThermal resistance

Thermal resistance, junction - case

Parameter

Max.Parameter

nA

Tj = 125°C

V

0.1 mA

1000

100-

-

Tj = 25°C

600

Symbol

-

Min.

Values

Typ.

100

IGSS -

V(BR)DSS VGS = 0V, ID = 1mA

IDSS

Conditions

Unit

Tsold

RthJA

Min.

RthJC

Symbol

-

Unit

°C/W

Values

V/nsTj = 25°C 50

-

3.13-

°C- 265

°C/W

UnitMax.

- -

- 70

Gate threshold voltage VGS (th) VDS = 10V, ID = 1mA 2

Gate - Source leakage current VGS = 20V, VDS = 0V

-

- V4

Thermal resistance, junction - ambient

Soldering temperature, wavesoldering for 10s

lElectrical characteristics (Ta = 25°C)

Parameter

Drain - Source breakdownvoltage

VDS = 600V, VGS = 0VZero gate voltagedrain current

WGate input resistance RG f = 1MHz, open drain - 16.7 -

Static drain - sourceon - state resistance WTj = 25°C - 0.90 0.98

Tj = 125°C -

RDS(on) *5

VGS = 10V, ID = 1.5A

1.36 -

2/12 2014.03 - Rev.B


Data SheetR6004ENX

*1 Limited only by maximum temperature allowed.

*2 PW 10ms, Duty cycle 1%

*3 ID = 0.8A, VDD = 50V

*4 Reference measurement circuits Fig.5-1.

*5 Pulsed

6.5

-

VGate plateau voltage V(plateau) VDD ⋍ 300V, ID = 4A - -

Gate - Drain charge Qgd *5

Parameter

lGate Charge characteristics (Ta = 25°C)

Rise time tr *5 ID = 2A

SymbolValues

22

VGS = 10V

- 2.5 -

Min.

15 -

Conditions

Total gate charge

Gate - Source charge Qgs *5 ID = 4A

Qg *5 VDD ⋍ 300V

10 -

-

Typ.

ns55 -

40 -

-

-

Max.Unit

nC

-

RG = 10W -

Turn - off delay time td(off) *5 RL = 150W -

Fall time tf *5

-

pF

- 14 -

- 57

Turn - on delay time td(on) *5 VDD ⋍ 300V, VGS = 10V -

Effective output capacitance,energy related

Effective output capacitance,time related

Co(er)

Co(tr)

VGS = 0VVDS = 0V to 480V

22

250 -

gfs *5 VDS = 10V, ID = 2A

pF-

Crss f = 1MHz - 30 -

250

Max.

Reverse transfer capacitance

lElectrical characteristics (Ta = 25°C)

Parameter Symbol ConditionsValues

UnitMin. Typ.

3.0Transconductance

Input capacitance

1.5

Output capacitance Coss VDS = 25V -

- S

Ciss VGS = 0V -

3/12 2014.03 - Rev.B


Data SheetR6004ENX

IS *1

ISM *2Tc = 25°C

Inverse diode continuous,forward current

Inverse diode direct current,pulsed

-

Peak reverse recovery current

Parameter Symbol ConditionsValues

Reverse recovery charge

trr *5

-

- 15

-

Qrr *5

Irrm *5

- -

-

lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)

- 2.4 - mC

VSD *5 VGS = 0V, IS = 4A

Typ.

Forward voltage

Reverse recovery time

UnitMin. Max.

A

A

320

Rth2 1.61 Cth2 0.00898

0.557 Cth1Rth1

-

-

A

0.00102

K/W Ws/K

UnitValue

lTypical Transient Thermal Characteristics

Symbol Value Unit Symbol

Rth3 2.24 Cth3 0.440

IS = 4Adi/dt = 100A/ms

1.5 V

ns

8.0

4.0

-

4/12 2014.03 - Rev.B


Data SheetR6004ENX

lElectrical characteristic curves

0

20

40

60

80

100

120

0 50 100 150 2000.0001

0.001

0.01

0.1

1

10

100

1000

0.0001 0.001 0.01 0.1 1 10 100 1000

Ta = 25ºC Single Pulse Rth(ch-a)(t) = ｒ(t)×Rth(ch-a) Rth(ch-a) = 70ºC/W

top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single

Fig.1 Power Dissipation Derating Curve

Pow

er D

issi

patio

n :

PD/P

D m

ax. [

%]

Junction Temperature : Tj [°C]

Fig.2 Normalized Transient Thermal Resistance vs. Pulse Width

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e : r

(t)

Pulse Width : PW [s]

0

20

40

60

80

100

120

0 25 50 75 100 125 150 175

Fig.3 Avalanche Energy Derating Curve vs Junction Temperature

Aval

anch

e En

ergy

: E

AS /

E AS

max

. [%

]

Junction Temperature : Tj [ºC]

5/12 2014.03 - Rev.B


Data SheetR6004ENX


0

0.5

1

1.5

2

0 1 2 3 4 5

Ta=25ºC Pulsed

VGS= 10.0V

VGS= 4.5V

VGS= 8.0V

VGS= 7.0V

VGS= 5.0V

VGS= 5.5V

0

1

2

3

4

0 10 20 30 40 50

VGS= 10.0V

VGS= 4.5V

VGS= 8.0V VGS= 7.0V

VGS= 5.5V

VGS= 5.0V

Ta=25ºC Pulsed

0

0.5

1

1.5

2

0 1 2 3 4 5

Ta=150ºC Pulsed

VGS= 10.0V

VGS= 4.5V

VGS= 8.0V VGS= 7.0V VGS= 6.5V VGS= 6.0V

VGS= 5.5V

VGS= 5.0V

0

1

2

3

4

0 10 20 30 40 50

VGS= 10.0V

VGS= 4.5V

VGS= 8.0V VGS= 7.0V

VGS= 6.5V

VGS= 6.0V

VGS= 5.5V

VGS= 5.0V

Ta=150ºC Pulsed

Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II)

Fig.6 Tj = 150°C Typical Output Characteristics(I)

Fig.7 Tj = 150°C Typical Output Characteristics(II)

Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

Dra

in C

urre

nt :

I D [A

]

Dra

in C

urre

nt :

I D [A

]

Dra

in C

urre

nt :

I D [A

]

Drain - Source Voltage : VDS [V]

Dra

in C

urre

nt :

I D [A

]


6/12 2014.03 - Rev.B


Data SheetR6004ENX


500

550

600

650

700

750

800

850

900

-50 -25 0 25 50 75 100 125 1500.001

0.01

0.1

1

10

0 2 4 6 8 10

Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC

VDS= 10V

2.0

2.5

3.0

3.5

4.0

-50 -25 0 25 50 75 100 125 150

VDS= 10V ID= 1mA

0.01

0.1

1

10

0.01 0.1 1 10

Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC

VDS= 10V

Fig.9 Typical Transfer Characteristics Fig.8 Breakdown Voltage vs. Junction Temperature

Dra

in -

Sour

ce B

reak

dow

n Vo

ltage

: V

(BR

)DSS

[V]

Dra

in C

urre

nt :

I D [A

]

Fig.10 Gate Threshold Voltage vs. Junction Temperature

Gat

e Th

resh

old

Volta

ge :

VG

S(th

) [V]

Junction Temperature : Tj [°C]

Fig.11 Transconductance vs. Drain Current

Tran

scon

duct

ance

: g f

s [S]

Drain Current : ID [A]

Junction Temperature : Tj [°C] Gate - Source Voltage : VGS [V]

7/12 2014.03 - Rev.B


Data SheetR6004ENX


0

1000

2000

3000

4000

5000

0 5 10 15 20

ID = 4A

ID = 1.5A

Ta=25ºC

100

1000

10000

0.01 0.1 1 10

Ta=25ºC

VGS= 10V

0

500

1000

1500

2000

-50 -25 0 25 50 75 100 125 150

VGS= 10V ID = 1.5A

100

1000

10000

0.01 0.1 1 10


VGS= 10V

Fig.12 Static Drain - Source On - State Resistance vs. Gate Source Voltage

Stat

ic D

rain

- So

urce

On-

Stat

e R

esis

tanc

e

: RD

S(on

) [m

W]

Gate - Source Voltage : VGS [V]

Fig.13 Static Drain - Source On - State Resistance vs. Junction Temperature

Stat

ic D

rain

- So

urce

On-

Stat

e R

esis

tanc

e

: RD

S(on

) [m

W]

Junction Temperature : Tj [ºC]

Fig.14 Static Drain - Source On - State Resistance vs. Drain Current

Stat

ic D

rain

- So

urce

On-

Stat

e R

esis

tanc

e

: RD

S(on

) [m

W]


Stat

ic D

rain

- So

urce

On-

Stat

e R

esis

tanc

e

: RD

S(on

) [m

W]


Fig.15 Static Drain - Source On - State Resistance vs. Drain Current

8/12 2014.03 - Rev.B


Data SheetR6004ENX


0

1

2

3

4

5

0 200 400 600

Ta=25ºC

1

10

100

1000

10000

0.01 0.1 1 10 100 1000

Coss

Crss

Ciss

Ta=25ºC f = 1MHz VGS = 0V

1

10

100

1000

10000

0.01 0.1 1 10

Ta = 25ºC VDD = 300V VGS = 10V RG= 10W

tr

tf

td(on)

td(off)

0

2

4

6

8

10

12

14

16

18

20

0 5 10 15 20

Ta = 25ºC VDD= 300V ID= 4A

Fig.16 Typical Capacitance vs. Drain - Source Voltage

Cap

acita

nce

: C [p

F]


Fig.18 Switching Characteristics

Switc

hing

Tim

e : t

[ns]


Fig.19 Dynamic Input Characteristics

Total Gate Charge : Qg [nC]

Gat

e - S

ourc

e Vo

ltage

: V

GS

[V]

Cos

s St

ored

Ene

rgy

: EO

SS [u

J]

Fig.17 Coss Stored Energy


9/12 2014.03 - Rev.B


Data SheetR6004ENX


10

100

1000

0.1 1 10

Ta=25ºC di / dt = 100A / ms VGS = 0V

0.01

0.1

1

10

0.0 0.5 1.0 1.5


VGS=0V

Fig.20 Inverse Diode Forward Current vs. Source - Drain Voltage

Inve

rse

Dio

de F

orw

ard

Cur

rent

: I S

[A]

Source - Drain Voltage : VSD [V]

Fig.21 Reverse Recovery Time vs.Inverse Diode Forward Current

Rev

erse

Rec

over

y Ti

me

: trr [n

s]

Inverse Diode Forward Current : IS [A]

10/12 2014.03 - Rev.B


Data SheetR6004ENX

lMeasurement circuits

Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform

Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform

Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform

11/12 2014.03 - Rev.B


Data SheetR6004ENX

lDimensions (Unit : mm)

Dimension in mm/inches

TO-220FM

MIN MAX MIN MAXA 16.60 17.60 0.654 0.693A1 1.80 2.20 0.071 0.087A2 14.80 15.40 0.583 0.606A4 6.80 7.20 0.268 0.283b 0.70 0.85 0.028 0.033b1 1.10 1.50 0.043 0.059c 0.70 0.85 0.028 0.033D 9.90 10.30 0.39 0.406E 4.40 4.80 0.173 0.189eE1 2.70 3.00 0.106 0.118F 2.80 3.20 0.11 0.126L 11.50 12.50 0.453 0.492p 3.00 3.40 0.118 0.134Q 2.10 3.10 0.083 0.122x - 0.381 - 0.015

2.54 0.10

DIMMILIMETERS INCHES

D

b1

E1

E

e

b

c

F

A2

A1

AL

x A

A4

φ p

Q

A

12/12 2014.03 - Rev.B

R1102Awww.rohm.com© 2014 ROHM Co., Ltd. All rights reserved.

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Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.

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r6004enx : transistors -...

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