nch 800v 10a power mosfet datasheet -...

Datasheet

www.rohm.com© 2013 ROHM Co., Ltd. All rights reserved.

R8010ANX Nch 800V 10A Power MOSFET

Tj °C

mJEAR *4

Avalanche energy, single pulse

Avalanche energy, repetitive

Avalanche current 5

EAS *3

2.7

mJ

PD 40

6.63

ID,pulse *2

ID *1

4.6 A

A

V30

V/ns

150

Reverse diode dv/dt

IAR *3

Range of storage temperature Tstg

Power dissipation (Tc = 25°C)

°C

W

Junction temperature

A

dv/dt *5 15

-55 to +150

Unit

800VDSS

ID *1 A

V

-

Marking R8010ANX

lFeatures

VGSS

40

Continuous drain current

Basic ordering unit (pcs)

Pulsed drain current

Gate - Source voltage

Parameter

Tc = 100°C

Switching Power Supply

10

Value

Tc = 25°C

Symbol

lAbsolute maximum ratings(Ta = 25°C)

Drain - Source voltage

lOutline

lInner circuit

lPackaging specifications

TO-220FM800V0.56W

40W10A

5) Parallel use is easy.

VDSS

RDS(on) (Max.)IDPD

1) Low on-resistance.

4) Drive circuits can be simple.

2) Fast switching speed.

Tape width (mm) -

3) Gate-source voltage (VGSS) guaranteed to be 30V.

lApplication

Reel size (mm)

6) Pb-free lead plating ; RoHS compliant

Bulk

-

Type

Packaging

500

Taping code

(1) (3) (2)

(1) Gate (2) Drain (3) Source

*1 BODY DIODE

1/13 2013.04 - Rev.A


Data SheetR8010ANX

WGate input resistance RG f = 1MHz, open drain - 12.8 -

Static drain - sourceon - state resistance WTj = 25°C - 0.43 0.56

Tj = 125°C -

RDS(on) *6

VGS = 10V, ID = 5A

0.95 -

UnitMax.

-

900

-

- 70

Gate threshold voltage VGS (th) VDS = 10V, ID = 1mA 3

Gate - Source leakage current VGS = 30V, VDS = 0V

-

- V5

Thermal resistance, junction - ambient

Soldering temperature, wavesoldering for 10s

lElectrical characteristics(Ta = 25°C)

Parameter

Drain - Source breakdownvoltage

VDS = 800V, VGS = 0V

Unit

Tsold

RthJA

Min.

RthJC

Symbol

-

Unit

°C/W

Values

V/nsTj = 125°C

50

-

3.13-

°C- 265

°C/W

Drain - Source avalanchebreakdown voltage -

800

ConditionsSymbol

V(BR)DS

-

Min.

Values

Typ.

100

-

Zero gate voltagedrain current

V(BR)DSS

VGS = 0V, ID = 5A

VGS = 0V, ID = 1mA

IDSS

IGSS - nA

Tj = 125°C

V

V

0.1 mA

1000

100-

-

Tj = 25°C

Drain - Source voltage slope dv/dtVDS = 640V, ID = 10A

-

Typ.

Symbol Conditions Values

lAbsolute maximum ratings

lThermal resistance

Thermal resistance, junction - case

Parameter

Max.Parameter

2/13 2013.04 - Rev.A


Data SheetR8010ANX

*1 Limited only by maximum temperature allowed.

*2 PW 10ms, Duty cycle 1%

*3 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C

*4 L ⋍ 500mH, VDD = 50V, RG = 25W, starting Tj = 25°C, f = 10kHz

*5 Reference measurement circuits Fig.5-1.

*6 Pulsed

Max.

Reverse transfer capacitance

lElectrical characteristics(Ta = 25°C)

Parameter Symbol ConditionsValues

UnitMin. Typ.

5.5Transconductance

Input capacitance

2.2

Output capacitance Coss VDS = 25V -

- S

Ciss VGS = 0V - 1750 -

gfs *6 VDS = 10V, ID = 5.0A

pF-

Crss f = 1MHz - 50 -

830

pF

- 48.0 -

- 129

Turn - on delay time td(on) *6 VDD ⋍ 400V, VGS = 10V -

Effective output capacitance,energy related

Effective output capacitance,time related

Co(er)

Co(tr)

VGS = 0VVDS = 0V to 640V

43

RG = 10W -

Turn - off delay time td(off) *6 RL = 100W -

Fall time tf *6

-

-

Typ.

ns97 194

25 50

-

-

Max.Unit

nC

-

Parameter

lGate Charge characteristics(Ta = 25°C)

Rise time tr *6 ID = 5A

SymbolValues

54

VGS = 10V

- 17 -

Min.

62 -

Conditions

Total gate charge

Gate - Source charge Qgs *6 ID = 10A

Qg *6 VDD ⋍ 400V

26 -

7.5

-

VGate plateau voltage V(plateau) VDD ⋍ 400V, ID = 10A - -

Gate - Drain charge Qgd *6

3/13 2013.04 - Rev.A


Data SheetR8010ANX

Unit

-

A

A

1.5 V

ns

40

10

Peak rate of fall of reverserecovery current

dirr/dt

-

Value

lTypical Transient Thermal Characteristics

170

-

Symbol Value Unit Symbol

- A

A/ms-Tj = 25°C

0.00393

K/W Ws/KRth2 0.607 Cth2 0.0547

0.0922 Cth1Rth1

Rth3 2.14 Cth3 0.53

IS = 10Adi/dt = 100A/ms

595

- -

-

lBody diode electrical characteristics (Source-Drain)(Ta = 25°C)

- 9.2 - mC

VSD *6 VGS = 0V, IS = 10A

Typ.

Forward voltage

Reverse recovery time

UnitMin. Max.

Inverse diode continuous,forward current

Inverse diode direct current,pulsed

-

Peak reverse recovery current

Parameter Symbol ConditionsValues

Reverse recovery charge

trr *6

-

- 30.8

-

Qrr *6

Irrm *6

IS *1

ISM *2Tc = 25°C

4/13 2013.04 - Rev.A


Data SheetR8010ANX

lElectrical characteristic curves

0

20

40

60

80

100

120

0 50 100 150 200

0.0001

0.001

0.01

0.1

1

10

100

1000

0.0001 0.001 0.01 0.1 1 10 100 1000

Ta = 25ºC Single Pulse Rth(ch-a)(t) = ｒ(t)×Rth(ch-a) Rth(ch-a) = 70ºC/W

top D = 1 D = 0.5 D = 0.1 D = 0.05 D = 0.01 D = Single

0.01

0.1

1

10

100

0.1 1 10 100 1000

Ta=25ºC Single Pulse

PW = 100ms

PW = 1ms

PW = 10ms

Operation in this area is limited by RDS(on)

(VGS = 10V)

Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area

Pow

er D

issi

patio

n :

PD/P

D m

ax. [

%]

Dra

in C

urre

nt :

I D [A

]

Junction Temperature : Tj [°C] Drain - Source Voltage : VDS [V]

Fig.3 Normalized Transient Thermal Resistance vs. Pulse Width

Nor

mal

ized

Tra

nsie

nt T

herm

al R

esis

tanc

e : r

(t)

Pulse Width : PW [s]

5/13 2013.04 - Rev.A


Data SheetR8010ANX


0

1

2

3

4

5

6

0.01 0.1 1 10 100

Ta = 25ºC VDD = 50V, RG = 25W VGF = 10V, VGR = 0V

0

500

1000

1500

2000

2500

3000

3500

4000

4500

5000

1.0E+04 1.0E+05 1.0E+06

Ta=25ºC

0

20

40

60

80

100

120

0 25 50 75 100 125 150 175

Fig.4 Avalanche Current vs Inductive Load

Aval

anch

e C

urre

nt :

I AR [A

]

Coil Inductance : L [mH]

Fig.5 Avalanche Power Losses

Aval

anch

e Po

wer

Los

ses

: PAR

[W]

Frequency : f [Hz]

Fig.6 Avalanche Energy Derating Curve vs Junction Temperature

Ava

lanc

he E

nerg

y : E

AS /

E AS

max

. [%

]

Junction Temperature : Tj [ºC]

6/13 2013.04 - Rev.A


Data SheetR8010ANX


0

2

4

6

8

10

0 10 20 30 40 50

Ta=150ºC Pulsed

VGS= 10.0V

VGS= 4.5V

VGS= 8.0V

VGS= 7.0V

VGS= 6.5V

VGS= 6.0V

VGS= 5.0V

VGS= 5.5V

0

1

2

3

0 1 2 3 4 5

Ta=150ºC Pulsed

VGS= 10.0V

VGS= 4.5V

VGS= 8.0V VGS= 7.0V

VGS= 6.5V VGS= 6.0V

VGS= 5.0V

VGS= 5.5V

Fig.7 Typical Output Characteristics(I) Fig.8 Typical Output Characteristics(II)

Fig.9 Tj = 150°C Typical Output Characteristics(I)

Fig.10 Tj = 150°C Typical Output Characteristics(II)

Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

Dra

in C

urre

nt :

I D [A

]

Dra

in C

urre

nt :

I D [A

]

Dra

in C

urre

nt :

I D [A

]

Drain - Source Voltage : VDS [V]

Dra

in C

urre

nt :

I D [A

]


0

2

4

6

8

10

0 10 20 30 40 50

VGS= 5.0V

VGS= 6.5V

VGS= 6.0V

Ta=25ºC Pulsed

VGS= 10.0V VGS= 9.0V

VGS= 7.0V VGS= 8.0V

0

1

2

3

4

5

0 1 2 3 4 5

Ta=25ºC Pulsed

VGS= 10.0V

VGS= 8.0V

VGS= 7.0V

VGS= 6.5V

VGS= 6.0V

VGS= 5.0V

VGS= 9.0V

7/13 2013.04 - Rev.A


Data SheetR8010ANX


700

750

800

850

900

950

1000

1050

1100

-50 -25 0 25 50 75 100 125 150

Fig.12 Typical Transfer Characteristics Fig.11 Breakdown Voltage vs. Junction Temperature

Dra

in -

Sour

ce B

reak

dow

n Vo

ltage

: V

(BR

)DSS

[V]

Dra

in C

urre

nt :

I D [A

]

Fig.13 Gate Threshold Voltage vs. Junction Temperature

Gat

e Th

resh

old

Volta

ge :

VG

S(th

) [V]

Junction Temperature : Tj [°C]

Fig.14 Transconductance vs. Drain Current

Tran

scon

duct

ance

: g f

s [S]

Drain Current : ID [A]

Junction Temperature : Tj [°C] Gate - Source Voltage : VGS [V]

0

2

4

6

8

-50 -25 0 25 50 75 100 125 150

VDS= 10V ID= 1mA Plused

0.001

0.01

0.1

1

10

100

0 1 2 3 4 5 6 7 8 9 10

VDS= 10V Plused

Ta=125ºC Ta=75ºC Ta=25ºC Ta= -25ºC

0.01

0.1

1

10

0.01 0.1 1 10 100

VDS= 10V Plused

Ta= -25ºC Ta=25ºC Ta=75ºC Ta=125ºC

8/13 2013.04 - Rev.A


Data SheetR8010ANX


0.01

0.1

1

10

0.1 1 10 100

VGS= 10V Plused


0

0.5

1

1.5

-50 -25 0 25 50 75 100 125 150

ID = 5A

ID = 10A

VGS= 10V Plused

0.0

0.2

0.4

0.6

0.8

1.0

0 2 4 6 8 10 12 14 16 18 20

ID = 5A

ID = 10A

Ta=25ºC Pulsed

Fig.15 Static Drain - Source On - State Resistance vs. Gate Source Voltage

Stat

ic D

rain

- So

urce

On-

Stat

e R

esis

tanc

e

: RD

S(on

) [W

]

Gate - Source Voltage : VGS [V]

Fig.16 Static Drain - Source On - State Resistance vs. Junction Temperature

Stat

ic D

rain

- So

urce

On-

Stat

e R

esis

tanc

e

: RD

S(on

) [W

]

Junction Temperature : Tj [ºC]

Fig.17 Static Drain - Source On - State Resistance vs. Drain Current

Stat

ic D

rain

- So

urce

On-

Stat

e R

esis

tanc

e

: RD

S(on

) [W

]

Drain Current : ID [A]

9/13 2013.04 - Rev.A


Data SheetR8010ANX


Fig.20 Switching Characteristics Fig.21 Dynamic Input Characteristics

1

10

100

1000

10000

0.01 0.1 1 10 100 1000

Coss

Crss

Ciss

Ta=25ºC f = 1MHz VGS = 0V

0

2

4

6

8

10

0 5 10 15 20 25 30 35 40 45 50 55 60 65

Ta = 25ºC VDD= 400V ID= 10A Pulsed

Fig.18 Typical Capacitance vs. Drain - Source Voltage

Cap

acita

nce

: C [p

F]


Switc

hing

Tim

e : t

[ns]

Drain Current : ID [A] Total Gate Charge : Qg [nC]

Gat

e - S

ourc

e Vo

ltage

: V

GS

[V]

Cos

s St

ored

Ene

rgy

: EO

SS [u

J]

Fig.19 Coss Stored Energy


10

100

1000

10000

0.01 0.1 1 10 100

tr

tf

td(on)

td(off)

VDD ≒ 400V VGS = 10V RG= 10W Ta = 25ºC Pulsed

0

2

4

6

8

10

12

14

16

18

0 200 400 600 800

Ta=25ºC

10/13 2013.04 - Rev.A


Data SheetR8010ANX


10

100

1000

10000

0.1 1 10

Ta=25ºC VGS = 0V di / dt = 100A / ms Pulsed

0.01

0.1

1

10

100

0.0 0.5 1.0 1.5

VGS=0V Pulsed


Fig.22 Inverse Diode Forward Current vs. Source - Drain Voltage

Inve

rse

Dio

de F

orw

ard

Cur

rent

: I S

[A]

Source - Drain Voltage : VSD [V]

Fig.23 Reverse Recovery Time vs.Inverse Diode Forward Current

Rev

erse

Rec

over

y Ti

me

: trr [n

s]

Inverse Diode Forward Current : IS [A]

11/13 2013.04 - Rev.A


Data SheetR8010ANX

lMeasurement circuits

Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform

Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform

Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform

12/13 2013.04 - Rev.A


Data SheetR8010ANX

lDimensions (Unit : mm)

Dimension in mm / inches

D

b1

E1

E

e

b

c

F

A2

A1

AL

x A

A4

φ p

Q

ATO-220FM

MIN MAX MIN MAX

A 16.60 17.60 0.654 0.693

A1 1.80 2.20 0.071 0.087

A2 14.80 15.40 0.583 0.606

A4 6.80 7.20 0.268 0.283

b 0.70 0.85 0.028 0.033

b1 1.10 1.50 0.043 0.059

c 0.70 0.85 0.028 0.033

D 9.90 10.30 0.390 0.406

E 4.40 4.80 0.173 0.189

e

E1 2.70 3.00 0.106 0.118

F 2.80 3.20 0.110 0.126

L 11.50 12.50 0.453 0.492

p 3.00 3.40 0.118 0.134

Q 2.10 3.10 0.083 0.122

x - 0.38 - 0.015

DIMMILIMETERS INCHES

2.54 0.100

13/13 2013.04 - Rev.A

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nch 800v 10a power mosfet datasheet -...

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