damj18n65 series - daco semidacosemi.com/proimages/mosfet_sj/2_sj/damj18n65_series.pdf · - 1230 -...

10
N-Channel Super Junction Power MOSFET Features VDSS = 650V RDS(ON) Typ. 0.22Ω @ VGS = 10V 100% avalanche tested RoHS Compliant Mechanical Data CaseTO-220,TO-220 ,TO-263,TO-247 3DFNDJH Absolute Maximum Ratings (Tc=25°C unless otherwise noted) Parameter Symbol Ratings Unit Drain Source Voltage VDS 650 V Gate Source Voltage VGS ±30 V Drain Current Continuous Tc=25ƱC ID 18 A Tc=100ƱC 13 Pulsed Drain Current (Note1) IDM 55 A Single Pulse Avalanche Energy (Note2) EAS 320 mJ Avalanche Current (Note1) IAR 3 A Repetitive Avalanche Energy (Note1) EAR 2 mJ Peak Diode Recovery dv/dt (Note3) dv/dt 15 V/ns Drain Source voltage slope(Vds=480V) dVds/dt 50 V/ns Power Dissipation TO-220/TO-263 TO-247 PD 151 W TO-220F 35 Operating Junction and Storage Temperature TSTG/ TJ -55 to +150 °C Junction to Case TO-220/TO-263 TO-247 RθJc 0.82 °C/W TO-220F Dec. 2019 DAMJ18N65 Series 3.57 F

Upload: others

Post on 08-May-2020

7 views

Category:

Documents


0 download

TRANSCRIPT

Page 1: DAMJ18N65 Series - DACO Semidacosemi.com/proimages/MOSFET_SJ/2_SJ/DAMJ18N65_Series.pdf · - 1230 - Output Capacitance Coss - 30 - pF Reverse Transfer Capacitance Crss - 2.6 -

N-Channel Super Junction Power MOSFET

Features VDSS = 650V

RDS(ON) Typ. 0.22Ω @ VGS = 10V

100% avalanche tested

RoHS Compliant

Mechanical Data Case TO-220,TO-220 ,TO-263,TO-247

Absolute Maximum Ratings (Tc=25°C unless otherwise noted)

Parameter Symbol Ratings Unit

Drain Source Voltage VDS 650 V

Gate Source Voltage VGS ±30 V

Drain Current Continuous Tc=25 C

ID 18

A Tc=100 C 13

Pulsed Drain Current (Note1) IDM 55 A

Single Pulse Avalanche Energy (Note2)

EAS 320 mJ

Avalanche Current (Note1)

IAR 3 A

Repetitive Avalanche Energy (Note1) EAR 2 mJ

Peak Diode Recovery dv/dt (Note3) dv/dt 15 V/ns

Drain Source voltage slope(Vds=480V) dVds/dt 50 V/ns

Power Dissipation

TO-220/TO-263 TO-247

PD 151

W TO-220F 35

Operating Junction and Storage Temperature TSTG/ TJ -55 to +150 °C

Junction to Case

TO-220/TO-263 TO-247 RθJc

0.82 °C/W

TO-220F

Dec. 2019

DAMJ18N65 Series

3.57

F

Page 2: DAMJ18N65 Series - DACO Semidacosemi.com/proimages/MOSFET_SJ/2_SJ/DAMJ18N65_Series.pdf · - 1230 - Output Capacitance Coss - 30 - pF Reverse Transfer Capacitance Crss - 2.6 -

Electrical Characteristics @ TJ =25°C (unless otherwise specified)

Parameter Symbol Conditions Min. Typ. Max. Unit

OFF Characteristics

Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250uA 650 - - V

Drain-Source Leakage Current IDSS VGS=0V VDS=650V - - 1 uA

Gate- Source Leakage Current IGSS VGS=30V VDS=0V - - 100 nA

ON Characteristics (Note4)

Gate Threshold Voltage VGS(TH) VDS=VGS ID=250uA 2.5 - 4.5 V

Static Drain-Source On-State Resistance RDS(on) VGS=10V ID=9A - 0.22 0.25 Ω

Dynamic Characteristics (Note5)

Input Capacitance Ciss VDS=25V VGS=0V Freq.=1MHz

- 1230 -

pF Output Capacitance Coss - 30 -

Reverse Transfer Capacitance Crss - 2.6 -

Switching Characteristics (Note5)

Turn-On Delay Time Td(on) VDD=400V RG =20Ω ID=9A

- 20 -

ns Rise Time Tr - 17 -

Turn-Off Delay Time Td(off) - 170 -

Fall Time Tf - 13 -

Total Gate Charge Qg VDS=400V VGS=10V ID=9A

- 42 -

nC Gate to Source Charge Qgs - 6 -

Gate to Drain Charge Qgd - 29 -

Drain-Source Diode Characteristics and Maximum Ratings

Diode Forward Voltage VSD VGS=0V IS=9A - - 1.5 V Maximum Continuous Drain-Source Diode Forward Current IS - - 18 A

Reverse Recovery Time Trr VGS=0V,IF=9A

dIF/dt=100A/μs (Note 1)

- 380 - ns

Reverse Recovery Charge Qrr - 4500 - nC

Notes: 1. Repetitive Rating:Pulse width limited by maximum junction temperature

2. VDD=150V,L=60mH,IAS=4A,Starting TJ =25°C

3. ISD≤4.5A,di/dt≤200A/us,VDD≤BVDSS,Starting TJ =25°C

4. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%

5. Guaranteed by design , not subject to production

Dec. 2019

DAMJ18N65 Series

Page 3: DAMJ18N65 Series - DACO Semidacosemi.com/proimages/MOSFET_SJ/2_SJ/DAMJ18N65_Series.pdf · - 1230 - Output Capacitance Coss - 30 - pF Reverse Transfer Capacitance Crss - 2.6 -

DACO SEMICONDUCTOR CO.,LTD.

®

3www.dacosemi.com.tw

Typical Diagramscharacteristics

DAMJ18N65 Series

Dec. 2019

Page 4: DAMJ18N65 Series - DACO Semidacosemi.com/proimages/MOSFET_SJ/2_SJ/DAMJ18N65_Series.pdf · - 1230 - Output Capacitance Coss - 30 - pF Reverse Transfer Capacitance Crss - 2.6 -

DACO SEMICONDUCTOR CO.,LTD.®

4www.dacosemi.com.tw

Typical Diagramscharacteristics

DAMJ18N65 Series

Dec. 2019

Page 5: DAMJ18N65 Series - DACO Semidacosemi.com/proimages/MOSFET_SJ/2_SJ/DAMJ18N65_Series.pdf · - 1230 - Output Capacitance Coss - 30 - pF Reverse Transfer Capacitance Crss - 2.6 -

DACO SEMICONDUCTOR CO.,LTD.®

5www.dacosemi.com.tw

Typical Diagramscharacteristics

DAMJ18N65 Series

Dec. 2019

Page 6: DAMJ18N65 Series - DACO Semidacosemi.com/proimages/MOSFET_SJ/2_SJ/DAMJ18N65_Series.pdf · - 1230 - Output Capacitance Coss - 30 - pF Reverse Transfer Capacitance Crss - 2.6 -

6www.dacosemi.com.tw

DACO SEMICONDUCTOR CO.,LTD.®

Typical Diagramscharacteristics

DAMJ18N65 Series

Dec. 2019

Page 7: DAMJ18N65 Series - DACO Semidacosemi.com/proimages/MOSFET_SJ/2_SJ/DAMJ18N65_Series.pdf · - 1230 - Output Capacitance Coss - 30 - pF Reverse Transfer Capacitance Crss - 2.6 -

DACO SEMICONDUCTOR CO.,LTD.®

7www.dacosemi.com.tw

TYPICAL TEST CIRCUIT

DAMJ18N65 Series

Dec. 2019

Page 8: DAMJ18N65 Series - DACO Semidacosemi.com/proimages/MOSFET_SJ/2_SJ/DAMJ18N65_Series.pdf · - 1230 - Output Capacitance Coss - 30 - pF Reverse Transfer Capacitance Crss - 2.6 -

DACO SEMICONDUCTOR CO.,LTD.®

8www.dacosemi.com.tw

Dimensions

TO 220 PACKAGE OUTLINE DIMENSIONS-

SymbolMIN MAX MIN MAX

0.167 0.192

0.042 0.058

0.080 0.115

0.020 0.044

0.038 0.063

0.012 0.028

0.575 0.626

0.317 0.366

0.377 0.416

0.092 0.108

0.495 0.563

0.110 0.165

0.134 0.163

0.096 0.118

Dimensions In Millimeters Dimensions In Inches

A 4.25 4.87

A1 1.07 1.47

A2 2.03 2.92

b 0.51 1.11

b1 0.97 1.6

C 0.3 0.7

D 14.6 15.9

8.04 9.3

E 9.57 10.57

e 2.34 2.74

L 12.58 14.3

L1 2.8 4.2

P 3.4 4.14

Q 2.45 3

D1

SymbolMIN MAX MIN MAX

0.167 0.193

0.091 0.115

0.103 0.111

0.012 0.039

0.035 0.061

0.012 0.028

0.571 0.644

0.346 0.370

0.374 0.413

0.091 0.108

0.496 0.551

0.096 0.169

0.114 0.150

0.098 0.140

Dimensions In Millimeters Dimensions In Inches

A 4.24 4.9

A1 2.3 2.92

A2 2.61 2.81

b 0.3 1

b1 0.9 1.55

C 0.3 0.7

D 14.5 16.36

D1 8.8 9.41

E 9.5 10.5

e 2.3 2.75

L 12.6 14

L1 2.45 4.3

P 2.9 3.8

Q 2.5 3.55

DAMJ18N65 Series

Dec. 2019

TO 220 PACKAGE OUTLINE DIMENSIONS- F

Page 9: DAMJ18N65 Series - DACO Semidacosemi.com/proimages/MOSFET_SJ/2_SJ/DAMJ18N65_Series.pdf · - 1230 - Output Capacitance Coss - 30 - pF Reverse Transfer Capacitance Crss - 2.6 -

DACO SEMICONDUCTOR CO.,LTD.®

9www.dacosemi.com.tw

Dimensions

TO 263 PACKAGE OUTLINE DIMENSIONS-

SymbolMIN MAX MIN MAX

0.167 0.192

0.042 0.058

0.000 0.010

0.024 0.040

0.047 0.053

0.012 0.024

0.373 0.427

0.334 0.366

0.382 0.406

0.192 0.208

0.176 0.230

0.052 0.092

0.000 0.087

Dimensions In Millimeters Dimensions In Inches

A 4.25 4.87

A1 1.07 1.47

A2 0 0.25

b 0.61 1.01

b1 1.2 1.34

C 0.3 0.6

D 9.48 10.84

D1 8.49 9.3

E 9.7 10.31

e 4.88 5.28

L 4.46 5.85

L1 1.33 2.33

L2 0 2.2

TO 247 PACKAGE OUTLINE DIMENSIONS-

DAMJ18N65 Series

Dec. 2019

Page 10: DAMJ18N65 Series - DACO Semidacosemi.com/proimages/MOSFET_SJ/2_SJ/DAMJ18N65_Series.pdf · - 1230 - Output Capacitance Coss - 30 - pF Reverse Transfer Capacitance Crss - 2.6 -

Disclaimer

DACO Semiconductor reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein.

DACO Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does DACO Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Purchasers is responsible for its products and applications using DACO Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by DACO Semiconductor. “Typical” parameters which may be provided in DACO Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts.

DACO Semiconductor products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of DACO Semiconductor’s product can reasonably be expected to result in personal injury, death or severe property or environmental damage. DACO Semiconductor accept no liability for inclusion and/or use of DACO Semiconductor’s products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Purchasers buy or use DACO Semiconductor products for any such unintended or unauthorized application, Purchasers shall indemnify and hold DACO Semiconductor and its suppliers and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that DACO Semiconductor was negligent regarding the design or manufacture of the part.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of DACO Semiconductor Co., Ltd.

www.dacosemi.com.tw

DACO SEMICONDUCTOR CO.,LTD.®

10

DAMJ18N65 Series

Dec. 2019