predicting the lifetime of flexible permeation barrier...

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Bhadri Visweswaran, Siddharth Harikrishna Mohan, William Quinn, Ruiqing (Ray) Ma, Jeff Silvernail, James Sturm, Sigurd Wagner Electrical Engineering and Princeton Institute for the Science and Technology of Materials Princeton University Universal Display Corporation, Ewing, New Jersey Predicting the Lifetime of Flexible Permeation Barrier Layers for OLED Displays 1

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Page 1: Predicting the Lifetime of Flexible Permeation Barrier ...bhadrivisweswaran.com/wp-content/.../SID2014_Bhadri...Β Β· β„Ž T (nm) O N𝑖 𝑖 100℃ 2 SIMS profile after 12 hours 1

Bhadri Visweswaran, Siddharth Harikrishna Mohan, William Quinn, Ruiqing (Ray) Ma, Jeff Silvernail, James Sturm, Sigurd Wagner

Electrical Engineering and Princeton Institute for the Science and Technology of Materials

Princeton University Universal Display Corporation, Ewing, New Jersey

Predicting the Lifetime of Flexible Permeation Barrier Layers for OLED Displays

1

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β€’ Introduction on permeation barrier films

β€’ Modes of permeation of water

Bulk permeation

β€’ Techniques for measuring diffusion of water

Secondary Ion Mass Spectrometry

Electrical Capacitance

Film stress

β€’ Designing barrier films and predicting a display lifetime

2

Outline

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Plastic film OLED

3

Why do we need permeation barrier films?

Samsung, CES 2013 LG Display, SID 2013

UDC, SID 2012

Lifetime ~𝑓𝑒𝑀 π‘šπ‘–π‘›π‘’π‘‘π‘’π‘  π‘‘π‘œ 𝑓𝑒𝑀 π‘‘π‘Žπ‘¦π‘ 

Required lifetime > 10 π‘¦π‘’π‘Žπ‘Ÿπ‘ !

Flexible permeation barrier film

Required barrier film water vapor transmission rate: ≀ 10-6 g / (m2 day)

Organic Light Emitting Diode on Plastic film

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Water permeates in four modes: 1. Through pin-holes 2. Along particles 3. Along interfaces 4. Through the bulk of the barrier layer

4

Modes of permeation through a barrier layer

P. Mandlik, et al., APL 93, 203306 (2008).

1

2

t = 0 17 h 115h 162h

Permeation along a particle 4Β΅m film at 65Β°C 85% RH

3

In university research, often

Difficult to measure!

3 1 2 , , 4 ≫

Flexible permeation barrier film

Permeation along interface 6Β΅m film at 65Β°C 85% RH

t = 0 863 h 1967h 2692h

OLED

Particle

Barrier

Pin-hole 4

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5

Motivation for measuring bulk permeation

How does quantitative evaluation of bulk permeation help? 1. Evaluate new permeation barrier materials 2. Design new single and multilayer barrier films 3. Extrapolate and predict room temperature condition performance

from accelerated tests

I quantitatively evaluate intrinsic water diffusion using 3 techniques: 1. Secondary Ion Mass Spectroscopy (SIMS) 2. Electrical capacitance 3. Film stress

Tests on OLEDs are not quantitative!

We need new techniques! t = 0 17 h 115h 162h

Permeation along a particle 4Β΅m film at 65Β°C 85% RH

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6

Evaluation of diffusion profiles

π‘₯ β„Ž

Water side: 𝑛 = 𝑛(π‘₯=0)

OLED side: 𝑛 β„Ž = 0

In an ideal barrier

π‘‘π‘’π‘π‘‘β„Ž π‘₯

π‘‘π‘–π‘šπ‘’

π‘π‘œπ‘›π‘π‘’π‘›π‘‘π‘Ÿπ‘Žπ‘‘π‘–π‘œπ‘› 𝑛π‘₯,𝑑

𝑛 π‘₯, 𝑑 = 𝑛(π‘₯=0)π‘’π‘Ÿπ‘“π‘π‘₯

𝐷𝑑 𝑛(0)

Water concentration profile

Permeability 𝑃 = 𝐷 Γ— 𝑛(π‘₯ = 0)

Water Vapor Transmission Rate WVTR = 𝑃/β„Ž

Fundamental properties:

β€’ Solubility of water, 𝑛(π‘₯=0) β€’ Diffusion coefficient, 𝐷

Required OLED water vapor transmission rate: ≀ 10-6 g / (m2 day)

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π‘‘π‘’π‘π‘‘β„Ž π‘₯ (nm) π‘Žπ‘‘π‘œπ‘šπ‘ π‘π‘

π·π‘’π‘’π‘‘π‘’π‘Ÿπ‘–π‘’π‘š π‘π‘Ÿπ‘œπ‘“π‘–π‘™π‘’

100℃ 𝐷2𝑂

SIMS profile after 12 hours

1. A 660 nm thick barrier layer on a silicon wafer was boiled in heavy water, 𝐷2𝑂 for 12 hours.

2. Deuterium was determined by sputter profiling using secondary ion mass spectroscopy

π·π‘–π‘“π‘“π‘’π‘ π‘–π‘œπ‘› π‘π‘œπ‘’π‘“π‘“π‘–π‘π‘–π‘’π‘›π‘‘: 𝐷 = 4.2 Γ— 10βˆ’15 π‘π‘š2 𝑠

π‘†π‘œπ‘™π‘’π‘π‘–π‘™π‘–π‘‘π‘¦ π‘œπ‘“ π‘€π‘Žπ‘‘π‘’π‘Ÿ: 𝑛 0 = 1.6 Γ— 1020π‘šπ‘œπ‘™π‘’π‘π‘’π‘™π‘’π‘  π‘π‘š3 = 4.8π‘šπ‘” π‘π‘š3

7

Secondary Ion Mass Spectrometry, SIMS

The deuterium follows erfc function!

100℃ 𝐷2𝑂

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Extracting D from total dissolved water

π‘‘π‘’π‘π‘‘β„Ž π‘₯

π‘‘π‘–π‘šπ‘’

π‘π‘œπ‘›π‘π‘’π‘›π‘‘π‘Ÿπ‘Žπ‘‘π‘–π‘œπ‘› 𝑛π‘₯,𝑑

𝑛 π‘₯, 𝑑 = 𝑛(0)π‘’π‘Ÿπ‘“π‘π‘₯

𝐷𝑑

𝑛(0)

Water concentration profile

Film capacitance C Film stress Οƒ

is proportional to 𝑁(𝑑)

Therefore C(t) and Οƒ(t) can be used to determine D

1 2

3

π‘‘π‘–π‘šπ‘’ 𝑑

𝑁𝑑2

Total number of dissolved molecules in the barrier

𝑁 𝑑 2 =4𝑛 π‘₯=0 2

πœ‹π· Γ— 𝑑

1

2

3

𝑁(𝑑) = 𝑛 π‘₯, 𝑑 π‘‘π‘‘β„Ž

0

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π‘‘π‘’π‘π‘‘β„Ž π‘₯

π·π‘–π‘’π‘™π‘’π‘π‘‘π‘Ÿπ‘–π‘ π‘π‘œπ‘›π‘ π‘‘π‘Žπ‘›π‘‘,πœ–π‘₯,𝑑

π‘‘π‘–π‘šπ‘’

πœ–(0)

πœ–π‘π‘Žπ‘Ÿπ‘Ÿπ‘–π‘’π‘Ÿ

9

D from Electrical Capacitance

𝐢 = πœ€0πœ€π΄

𝑑

πœ€π‘π‘Žπ‘Ÿπ‘Ÿπ‘–π‘’π‘Ÿ β‰… πœ€π‘†π‘–π‘‚2 = 3.9

πœ€π‘π‘Žπ‘Ÿπ‘Ÿπ‘–π‘’π‘Ÿ π‘€π‘–π‘‘β„Ž 𝐻2𝑂 = 3.9 + 2.6 Γ— 10βˆ’16 𝑁(𝑑)

π‘‘π‘–π‘šπ‘’ 𝑑 (β„Žπ‘œπ‘’π‘Ÿπ‘ )

1

πΆπ‘‘βˆ’ 1

𝐢0

2

𝑖𝑛 1

𝑝𝐹2

π‘†π‘™π‘œπ‘π‘’ =4

πœ‹

1

𝐢(∞)βˆ’

1

𝐢(0)

1

β„Ž

2

Γ— 𝐷

In water at 100℃

π·π‘–π‘“π‘“π‘’π‘ π‘–π‘œπ‘› π‘π‘œπ‘’π‘“π‘“π‘–π‘π‘–π‘’π‘›π‘‘: 𝐷 = 5.6 Γ— 10βˆ’15 π‘π‘š2 𝑠

Compare D from SIMS: 4.2 Γ— 10βˆ’15 π‘π‘š2 𝑠

1

𝐢(𝑑)βˆ’

1

𝐢 0=

1

𝐢(∞)βˆ’

1

𝐢 0

2

β„Ž πœ‹π·π‘‘

𝐢 𝑑 = capacitance at time t 𝐢 0 = initial capacitance 𝐢(∞) = saturated final capacitance

β„Ž

Capacitor structure

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πΆβ„Žπ‘Žπ‘›π‘”π‘’ 𝑖𝑛 π‘ π‘‘π‘Ÿπ‘’π‘ π‘ 

2 π‘€π‘ƒπ‘Ž2

π‘†π‘™π‘œπ‘π‘’ =4

πœ‹

𝜎(∞)

β„Ž

2

Γ— 𝐷

π‘‘π‘–π‘šπ‘’ 𝑑 (β„Žπ‘œπ‘’π‘Ÿπ‘ )

In water at 100℃

π·π‘–π‘“π‘“π‘’π‘ π‘–π‘œπ‘› π‘π‘œπ‘’π‘“π‘“π‘–π‘π‘–π‘’π‘›π‘‘: 𝐷 = 4.4 Γ— 10βˆ’15 π‘π‘š2 𝑠

SIMS : 4.2 Γ— 10βˆ’15 π‘π‘š2/𝑠 Capacitance : 5.6 Γ— 10βˆ’15 π‘π‘š2/𝑠

𝐷 π‘“π‘Ÿπ‘œπ‘š

Average film stress:

𝜎 = πΈπ‘Š6𝑅 𝐻2

β„Ž

𝑅 - Bending radius πΈπ‘Š - Wafer elastic constant 𝐻 - Substrate thickness β„Ž - Barrier thickness

Water uptake Film under stress

10

D from Stress

𝜎 𝑑 = 2 Γ— 10βˆ’18𝑁(𝑑)

β„Ž π‘€π‘ƒπ‘Ž Stress:

𝜎 𝑑 - stress at time t 𝜎 ∞ - saturated final stress

In-diffusing water causes film expansion of the barrier layer Compressive stress

Advantages: 1. Extremely simple fabrication: 1 step! 2. Particles and defects have no impact!

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Salient points of new techniques

Diffusion coefficient Area Barrier thickness

SIMS 𝐷 = 4.2 Γ— 10βˆ’15 π‘π‘š2/𝑠 0.1mmx0.1mm sputter target

660nm

Electrical Capacitance

𝐷 = 5.6 Γ— 10βˆ’15 π‘π‘š2/𝑠 1mmx1mm

capacitor size 200nm

Film stress 𝐷 = 4.4 Γ— 10βˆ’15 π‘π‘š2/𝑠 4 inch

silicon wafer 1500nm

Uniform D over different area and thickness

What about performance at room temperature?

Measured at 100Β°C boiling water (100Β°C 100% RH)

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Solubility and Diffusion coefficient activation energies π‘šπ‘œπ‘™π‘’π‘π‘’π‘™π‘’π‘ π‘π‘š

3π‘Žπ‘‘π‘š

1000 𝑇 (1/𝐾)

𝑇(℃)

Solubility

𝐸𝑆 = βˆ’0.20𝑒𝑉

Measured solubility

𝑛 𝑇 = 𝑛0𝑒0.20𝑒𝑉

π‘˜π‘‡

Obtained from film stress measurements

1000 𝑇 (1/𝐾)

π·π‘–π‘“π‘“π‘’π‘ π‘–π‘œπ‘› πΆπ‘œπ‘’π‘“π‘“π‘–π‘π‘–π‘’π‘›π‘‘ (π‘π‘š2𝑠 )

𝑇(℃)

Diffusion coefficient

𝐸𝐷 = 0.71𝑒𝑉

𝐷 𝑇 = 𝐷0π‘’βˆ’0.71𝑒𝑉

π‘˜π‘‡

silica glass+

+Tomozawa, M., Am Ceram Soc Bull. 1985, 1337.

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Extrapolating barrier performance to room temperature

At 100Β°C and 100% Relative Humidity

Solubility 1.6 Γ— 1020π‘šπ‘œπ‘™π‘’π‘π‘’π‘™π‘’π‘  π‘π‘š3π‘Žπ‘‘π‘š

Diffusion coefficient 4.2 Γ— 10βˆ’15 π‘π‘š2 𝑠

Solubility activation energy βˆ’0.20 𝑒𝑉

Diffusion coefficient activation energy 0.71 𝑒𝑉

At 38Β°C and 90% Relative Humidity

Solubility 3.2 Γ— 1019π‘šπ‘œπ‘™π‘’π‘π‘’π‘™π‘’π‘  π‘π‘š3

Diffusion coefficient 5.4 Γ— 10βˆ’17 π‘π‘š2 𝑠

Water vapor transmission rate

1.5 Γ— 10βˆ’7 𝑔 π‘š2π‘‘π‘Žπ‘¦

π‘‘π‘–π‘šπ‘’ 𝑑 (π‘¦π‘’π‘Žπ‘Ÿπ‘ )

π‘π‘’π‘šπ‘π‘’π‘Ÿ π‘œπ‘“ π‘šπ‘œπ‘›π‘œπ‘™π‘Žπ‘¦π‘’π‘Ÿπ‘ 

π‘œπ‘“ π‘π‘’π‘Ÿπ‘šπ‘’π‘Žπ‘‘π‘’π‘‘ π‘€π‘Žπ‘‘π‘’π‘Ÿ

Total quantity of permeated water

Performance of a 3Β΅m barrier at 38Β°C and 90% Relative Humidity

3Β΅m, 38Β°C and 90% RH

1 monolayer of water

(*PH2O at 38Β°C and 90% Relative Humidity is 0.06atm)

Permeation time for 1 monolayer

13.4 π‘¦π‘’π‘Žπ‘Ÿπ‘ 

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Barrier design and testing

At 38Β°C and 90% Relative Humidity

Solubility 3.2 Γ— 1019π‘šπ‘œπ‘™π‘’π‘π‘’π‘™π‘’π‘  π‘π‘š3

Diffusion coefficient 5.4 Γ— 10βˆ’17 π‘π‘š2 𝑠

π΅π‘Žπ‘Ÿπ‘Ÿπ‘–π‘’π‘Ÿ π‘‘β„Žπ‘–π‘π‘˜π‘›π‘’π‘ π‘  β„Ž (πœ‡π‘š)

π‘‘π‘–π‘šπ‘’ πœπ‘€πΏ (π‘¦π‘’π‘Žπ‘Ÿπ‘ )

1 monolayer permeation time at 38Β°C 90% RH

π‘‡π‘’π‘šπ‘π‘’π‘Ÿπ‘Žπ‘‘π‘’π‘Ÿπ‘’ (℃)

π΄π‘π‘π‘’π‘™π‘’π‘Ÿπ‘Žπ‘‘π‘–π‘œπ‘› π‘“π‘Žπ‘π‘‘π‘œπ‘Ÿ

Acceleration factor from 38Β°C 90% RH to 100% RH at higher temperatures

Barrier film lifetime is not linear with thickness!

πœπ‘€πΏ = 2.41β„Ž1.57

3Β΅m, πœπ‘€πΏ = 13.4 π‘¦π‘’π‘Žπ‘Ÿπ‘ 

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Conclusion

Introduced simple techniques to measure diffusion coefficient of water

Electrical Capacitance

Film stress

Determined the concentration of water with SIMS, used to calibrate capacitance and film stress

The techniques are

Simple: fabrication & testing

Immune to particles and defects

With the techniques we can:

Rapidly evaluate barrier materials and films

Predict room temperature performance

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Acknowledgements

Prof. Sigurd Wagner and group Sushobhan Avasti, Warren Rieutort-Louis, Josh Sanz-Robinson,

Lin Han, Prashant Mandlik

Prof. James Sturm

Princeton Program in Plasma Science and Technology

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Questions?

Thanks!