non-destructive analysis techniques for advanced package€¦ · non-destructive analysis...
TRANSCRIPT
Non-destructive Analysis
Techniques for Advanced Package
Dr. Chih Hsun Chu, CTO
Materials Analysis Technology Inc.
Content
• Introduction of package trend
– Complex routing
– Multi-chip and incorporating passive components.
– 3D structure
• Advanced non-destructive failure analysis tools
– 3D X-ray microscope
– Scanning acoustic tomography (SAT)
– Lock-in thermography
– Time domain reflectometer (TDR)
• Examples of failure cases
• Summary
Why go for 3D package?
• Performance driven
– Higher speed, complex function
– Global wires length reduction
– Clock frequency increase
– Power reduction
– Better noise performance
• Real estate driven
– Thinner
– Smaller
New Challenges of Failure Analysis
• Previous, simple connection
between lead frame to chip
• Now, complicated routing,
stacking, and passive
components embedded.
3D X-ray microscope image of a small PCB module
Top view X-ray image of a stack die package Cross sectional view X-ray image of a stack die package
Tilted view X-ray image of a simple package
Advanced Non-destructive Analysis Tools
• 3D X-ray microscope
• Scanning acoustic tomography (SAT)
• Lock-in thermography
• Time domain reflectometer (TDR)
Comparison among Tools
TDR Thermal Emission
SAT X-ray
Microscope
Stimulus Electric Electric Acoustic X-ray
Delivery Electrical
wires Electrical
wires Water Air
Direct contact
Yes Yes No No
O/P form Reflection
profile image Image Image
Failure location
Good Good Good Good
Spatial resolution
~ 1 mm 15 um/pixel ~ 5 um 0.7 um
3D X-ray Microscope
• Below um spatial resolution (0.7 um)
– Two-stage magnification system
• First stage: Geometric magnification
• Second stage: Optical magnification
• 3D tomography
• Composition contrast
• Phase contrast to differential light element
Scanning Acoustic Tomography (SAT)
• Reduced edge effect
• Improved spatial resolution
• Enhanced penetration capability
Lock-in Thermal Emission Microscope
• Abnormal current
generates power
dissipation and raises
the temperature
• Heat diffuses to the top
surface of a package
• Long wave-length IR
detected by the InSb
camera
Time Domain Reflectometer (TDR)
• From final test to obtain the failed pin/solder ball
• Narrow down the location of the failed electrical
path from the failed pin/solder ball
• Using X-ray to focus on the TDR indicated failure
location
Examples of Failure Cases
• Open
– TDR to narrow down the failure location and followed
by 3D X-ray microscope investigation
– SAT localization and followed by PFA investigation
• Short
– Lock-in thermal emission microscope followed by 3D
X-ray microscope or PFA
• Wire to wire bridge
• Wire to wire short by large particle
• Trace to trace short by Nano Particle inside PCB
Crack of the PCB Trace
Delamination of MEMS
normal
peeling was found
Delamination of Cu Pillar
Location: X2 Location: X3
% of delaminated area
X1: 15.1 % (dark)
X2: 100.0 % (grey)
X3: 40.2 % (gray)
Location: X1
Wire to Wire Short
• Pin to pin short
identified by I-V
• Thermal emission
microscope to
localized the short
X-RAY Radiography
Wire to Wire Short
Hot spot area.
Wire to Wire Short
• Reconstructed
3D X-ray
image
Wire to Wire Short
Wire to Wire Short
Wire to Wire Short: Large Particle
• I-V shows pin to pin short
• Thermal emission microscope locates hot spot
Wire to Wire Short: Large Particle
• Partial removal of top molding
Wire to Wire Short: Large Particle
• Reconfirm the hot spot by thermal emission
microscope
Wire to Wire Short: Large Particle
• Cross sectioning at the hot spot
• Large particle containing carbon was identified
by SEM/EDX
Nano Particle inside PCB
• Impendence was measured from failure dies
Nano Particle inside PCB
• Hot spot detected by OBIRCH
Nano Particle inside PCB
• Cross sectioning across the hot spot area
• Nano particles (Au, Ni, Cr) were found by
TEM/EDX
Summary
• Advanced non-destructive analysis tools were
successfully utilized to investigate package
process resulted failure
• Combining usage of different tools is necessary
to find the failure site and localize the fault
• When chip function is recovered after decap of
the package, non-destructively analysis the
failure part before decap provides the evidence
that either the failure is due to the abnormal
packaging process or incompatibility of the
package materials.