noise in rf microelectronics

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RF Microelectronics LECTURE -2 : NOISE BY: AHMED SAKR. [email protected] SUPERVISED BY: PROF. HESHAM HAMED DR. MAHMOUD A. ABDELGHANY.

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Page 1: Noise in RF microelectronics

RF MicroelectronicsLECTURE -2 : NOISE

BY: AHMED SAKR.

[email protected]

SUPERVISED BY:

PROF. HESHAM HAMED

DR. MAHMOUD A. ABDELGHANY.

Page 2: Noise in RF microelectronics

Introduction

Performance limitations

The two main performance

limitations in RF design are noise and

nonlinearity.

Noise is RANDOM, which means that

the instantaneous value of noise can

not be predicted.

Noise is expressed in term of its

average power Pn.

Page 3: Noise in RF microelectronics

Device Noise

Thermal noise of resistors

Resistors noise is modeled by an ideal resistance

in series with voltage source with Vn2 or in parallel with

a current source of In2.

model should be chosen to simplify calculations.

The polarity of the sources is unimportant but should be same throughout the entire calculations.

Page 4: Noise in RF microelectronics

Device Noise

Noise of MOSFETsThermal, flicker.

ฮณ is the Excess noise coefficient. 2/3 for

long channel MOS, >= 2 for short channel

MOSs.

Thermal noise may be modeled by series

voltage source with the gate or parallel

current source between the drain and source.

flicker noise 1/f.

Page 5: Noise in RF microelectronics

Device Noise

Noise of MOSFETsThermal, flicker.

Flicker noise 1/f. modeled by a

voltage source in series with the gate.

The choice of the lower frequency

of the system should be larger than the

Corner frequency fc.

flicker noise+ nonlinearity+ (time-

variance) = translation of flicker noise

into the band of interest [Mixers, OSC]

(*)K is a process-

dependent constant

Page 6: Noise in RF microelectronics

Representation of noise in circuits.

Input-referred noise

Noise is modeled by series voltage source & parallel current source.

To calculate Vn2 we short the input port and measure output noise,

To calculate In2 we do the same with input port opened.

Page 7: Noise in RF microelectronics

Representation of noise in circuits.

Noise figure

SNR (signal-to-noise ratio) = ๐‘ƒ๐‘ ๐‘–๐‘”๐‘›๐‘Ž๐‘™

๐‘ƒ๐‘›๐‘œ๐‘–๐‘ ๐‘’

NF describes the added noise from the

circuit into the signal.

Page 8: Noise in RF microelectronics

Sensitivity & dynamic range

Sensitivity is the minimum signal level that a

receiver can detect with acceptable quality.

Noise floor

The total integrated noise of the system

Dynamic range :๐‘กโ„Ž๐‘’ ๐‘š๐‘Ž๐‘ฅ๐‘–๐‘š๐‘ข๐‘š ๐‘‘๐‘’๐‘ ๐‘–๐‘Ÿ๐‘’๐‘‘ ๐‘–๐‘›๐‘๐‘ข๐‘ก ๐‘™๐‘’๐‘ฃ๐‘’๐‘™ ๐‘Ž ๐‘Ÿ๐‘’๐‘๐‘’๐‘–๐‘ฃ๐‘’๐‘Ÿ ๐‘๐‘Ž๐‘› ๐‘ก๐‘œ๐‘™๐‘œ๐‘Ÿ๐‘Ž๐‘ก๐‘’

๐‘กโ„Ž๐‘’ ๐‘š๐‘–๐‘›๐‘–๐‘š๐‘ข๐‘š ๐‘–๐‘›๐‘๐‘ข๐‘ก ๐‘™๐‘’๐‘ฃ๐‘’๐‘™ ๐‘–๐‘ก ๐‘๐‘Ž๐‘› ๐‘‘๐‘’๐‘ก๐‘’๐‘๐‘ก (๐‘†๐‘’๐‘›๐‘ ๐‘–๐‘ก๐‘–๐‘ฃ๐‘–๐‘ก๐‘ฆ)

Page 9: Noise in RF microelectronics

Sensitivity & dynamic range

Dynamic range:๐‘กโ„Ž๐‘’ ๐‘š๐‘Ž๐‘ฅ๐‘–๐‘š๐‘ข๐‘š ๐‘‘๐‘’๐‘ ๐‘–๐‘Ÿ๐‘’๐‘‘ ๐‘–๐‘›๐‘๐‘ข๐‘ก ๐‘™๐‘’๐‘ฃ๐‘’๐‘™ ๐‘Ž ๐‘Ÿ๐‘’๐‘๐‘’๐‘–๐‘ฃ๐‘’๐‘Ÿ ๐‘๐‘Ž๐‘› ๐‘ก๐‘œ๐‘™๐‘œ๐‘Ÿ๐‘Ž๐‘ก๐‘’

๐‘กโ„Ž๐‘’ ๐‘š๐‘–๐‘›๐‘–๐‘š๐‘ข๐‘š ๐‘–๐‘›๐‘๐‘ข๐‘ก ๐‘™๐‘’๐‘ฃ๐‘’๐‘™ ๐‘–๐‘ก ๐‘๐‘Ž๐‘› ๐‘‘๐‘’๐‘ก๐‘’๐‘๐‘ก (๐‘†๐‘’๐‘›๐‘ ๐‘–๐‘ก๐‘–๐‘ฃ๐‘–๐‘ก๐‘ฆ)

SFDR (spurious-free dynamic range): ๐‘€๐‘Ž๐‘ฅ๐‘–๐‘š๐‘ข๐‘š ๐‘–๐‘›๐‘๐‘ข๐‘ก ๐‘™๐‘’๐‘ฃ๐‘’๐‘™ ๐‘–๐‘› ๐‘ก๐‘ค๐‘œโˆ’๐‘ก๐‘œ๐‘›๐‘’ ๐‘ก๐‘’๐‘ ๐‘ก ๐‘ค๐‘–๐‘กโ„Ž ๐ˆ๐Œ ๐ฅ๐ž๐ฏ๐ž๐ฅโ‰ค๐ง๐จ๐ข๐ฌ๐ž ๐Ÿ๐ฅ๐จ๐จ๐ซ

(๐‘†๐‘’๐‘›๐‘ ๐‘–๐‘ก๐‘–๐‘ฃ๐‘–๐‘ก๐‘ฆ)

Page 10: Noise in RF microelectronics

Impedance transformation

Quality Factor

Quality factor Q indicates how close to ideal an energy-storing

device (Inductor, Capacitor) is.

Page 11: Noise in RF microelectronics

Impedance transformation

Parallel to series conversion

Quality factor Q indicates how close to ideal an energy-storing

device (Inductor, Capacitor) is.

For Q2>>1 (true for a finite frequency range)

Page 12: Noise in RF microelectronics

Impedance transformation

L sections used for matching

Sometimes the load resistance is needed to become larger or

smaller, that can be achieved by matching networks as following

Page 13: Noise in RF microelectronics

Scattering parameters.

Page 14: Noise in RF microelectronics

Scattering parameters.

Input matching

Reverse gain

Output matching

Gain

Page 15: Noise in RF microelectronics

Any Questions?