m.j. barnes & t. fowler kickers for ctf3 · m.j. barnes kickers for ctf3 ctf3 collaboration...

M.J. BARNES & T. FOWLER

M.J. Barnes Kickers for CTF3 CTF3 Collaboration Meeting, 17/01/2007 pg1

KICKERS FOR CTF3KICKERS FOR CTF3

Michael BarnesCERN AB/BT

Prepared with input fromTony Fowler and Akira Ueda



DL

CLEX 2007-2009building in 2006

20042005

CTF3 ProgrammeCTF3 Programme

2006

Thermionic gun

CRLinac

TL2 2007

30 GHz production(PETS line)and test stand

Photo injector / lasertests from 2006

: kicker

Extraction kicker

Tail clipper

2007



Kicker specifications:

mm30± 1 %Field homogeneitymm≥ 40Horizontal aperturemm≥ 40Vertical aperturem2Available length (flange to flange)Hz50NominalHz5Initial

Repetition rate

%± 0.25Flat-top stability (including droop)%± 0.1Flat-top reproducibilityns200Pulse length (max.)ns≤ 70Rise & Fall-times (0 – 100 %)mrad7Kick angleMeV300Energy

Combiner Ring Extraction KickerCombiner Ring Extraction Kicker




35 nsRise time

40 kVPFN voltage

660 ACurrent

0.084 T. mInteg. Field

0.0237 TField

110 X 35 mmApertureH x V

UnitsParameters

x2

Stage 1:• For operation in 2007 an existing ex-

Electron-Positron Accumulatorkicker system, which only partially satisfies the specifications, has been modified and installed (KHA).

• Employs 2 ferrite-cored kicker magnets whose vertical aperture is 35mm, smaller than the nominal 40mm required. The vertical restriction excluded the possibility of inserting metallized ceramic plates to improve the beam impedance.

• Existing HV pulsed power supplies are used – using thyratron switched PFN.



Combiner Ring Extraction KickerCombiner Ring Extraction KickerStage 2:• To mitigate the effects of the kicker impedance on the beam stability, a strip-line

kicker designed and built by CIEMAT (see talk by I. Rodriguez) will be installed late 2007(?).

Each electrode will be terminated in 50Ω. The electrodes will be pulsed with separate, opposing polarity, pulsed power supplies. These will be initially constructed from re-configured ex-EPA equipment using thyratron switches and cable Pulse-Forming Networks.

Resources & Schedule:30 kCHF and 0.5 FTE will be required for the power supply reconfiguration and installation:should be available from mid-2007.HFSS 3D Model of strip-lines with

rectangular aperture




Stage 3:

• An ongoing collaboration with CIEMAT and a Spanish company, GreenPower. The collaboration is developing a solid-state pulsed power supply using a Stacked MOSFET Switch (SMS).

• SMS technology is a very promising candidate to fulfill the requirements of a multi-MHz burst mode pulse generator which will be needed for CLIC Combiner Ring (CR) Extraction Kickers. A prototype CLIC CR kicker could be tested in the CTF3 CR.

• This technology also has potential applications for the CTF3 TL2 Tail-clipper and the CLIC Damping Ring (DR) Kickers. Some development effort for the latter could be supported under a FP7 GADGET proposal but funding would only start early 2009.

• Initially this collaboration development was focused solely on the CLIC CR kicker, however the tail-clipper provides a more immediate and cost-effective test bed.



CTF3 & CLIC StripCTF3 & CLIC Strip--Line KickersLine KickersStrip-line kickers: preliminary specifications:

Hz5015050Nominal

A64210252Pulse current (into 50 Ω load)10.5

Up to 10

± 0.25± 0.1

50 to 60

≤ 30

3202.5

2500

CLIC CR

kV3.2 for 1m12.6Pulse voltage

mUp to 1.51.7Strip-line length

Tail Clipper

CTF3 CR Extraction

≤ 1 rms

none

5NANA

Up to 140≤ 5 !

401.2200

nsTiming Jitter

MHznoneBurst mode

Hz5InitialRepetition rate

%± 0.25Flat-top stability (including droop)%± 0.1Flat-top reproducibilityns200Pulse duration

ns≤ 70Rise & fall-times (0.25% to 99.75%)

mm40Strip-line plate separationmrad7Total kick deflection angle (“B” & “E” Fields)MeV300Beam energy



Stacked MOSFET SwitchesStacked MOSFET Switches

The DC storage capacitor is charged up to the required high voltage.The number of series modules, including redundancy, is chosen based on the required high voltage.The switch is gated on to initiate the pulse and gated off to terminate the pulse.The switch control unit is at switch source potential, i.e. floating with respect to ground.To achieve fast rise and fall times, low inductance is required between the switch control unit and switch.Each module provides load current.The output voltage is approximately equal to the DC storage capacitor voltage (minus D-S voltage drops).

SolidSolid--state switches consisting of stacked MOSFETs, as shown below, hastate switches consisting of stacked MOSFETs, as shown below, have ve been developed extensively at TRIUMF by Gary Wait & Michael Barnbeen developed extensively at TRIUMF by Gary Wait & Michael Barnes.es.



Example of Kickers Based on SMS Example of Kickers Based on SMS (TRIUMF)(TRIUMF)

Prototype 1MHz kicker (1995)2 FET stacks in push-pull; capacitive load;Up to 10 kV pulses; 40 ns rise & fall time;1 MHz with storage cables (fixed rep-rate) & variable up to 0.5 MHz without storage cables.

Primary Winding

Charge Booster Kicker (2001) [(used at Grenoble (France) & TRIUMF)]2 FET stacks in push-pull; capacitive load;up to −3.5 kV; 63 ns rise & fall; DC to 52 kHz continuous (variable); pulse width 350 ns to >10 s (variable).

APT1004 FET Pulse transformer core



CIEMAT/GreenPower CollaborationCIEMAT/GreenPower CollaborationSolid-state pulsed power supply development:

Improved triggering techniques are required to satisfy the stringent timing constraints for both turning-on and turning-off the power MOSFETs for both CTF3 & CLIC strip-line kickers; this is the main goal of the collaboration work package. CERN will develop and prototype new trigger circuits in early 2007. Potentially suitable fibre optics components have already been identified and ordered.Initial agreement was for GreenPower to undertake series production and HV testing of 24 switch cards foreseen for use in two prototype stacks. Application to the CR kicker would, given the recent increase in required kick angle from 5 mradto 7 mrad, require paralleling of switch cards for higher current and extra series cards for higher voltage. This increases the requirement to 80 switch cards (including spares) at a (prohibitive?) cost of 60 kCHF, plus 22 kCHF for other hardware (excludes 50Ω loads, HV DC supplies, capacitors & GreenPowerestimate of their work). A more cost-effective application could be the tail-clipper power supply which will permit validation of rise-time capability. Further validation of burst mode and turn-off capabilities would be required for the CR and DR kicker applications.



Tail Clipper: IntroductionTail Clipper: Introduction

• Output from CTF3 CR is 140ns long (35A beam current);• Kicker is required to be able to adjust length of beam pulse;• Maximum duration of required kick pulse is 140ns;• Fast rise of kick pulse is required to minimize uncontrolled beam loss;• “Flat-top” of kick pulse is not important as deflected beam is to be

thrown away.

35A

140ns 140ns0A

KICK≤5ns

Beam Pulse from CR



Tail Clipper: DeflectionTail Clipper: Deflection

From CTF3 CR

To CLEX

Beam (e-)

Strip-line at positive voltage

Strip-line at negative voltage

Fe

Deflection due to Electric Field:

From CTF3 CR

To CLEX

Beam (e-)

I

I

FmB

B

B

B B

B

Deflection due to Magnetic Field: Strip-lines fed from CLEX end+V

-V



Tail Clipper: Rise TimeTail Clipper: Rise Time• To make use of both the electrical and magnetic fields to deflect the beam, the

strip-lines must “charged” from the CLEX (beam exit) end;• To provide 1.2 mrad, with strip-lines terminated in 50 Ω, requires 3.2 kV on 1 m

long strip-lines;• Electrical pulse propagation through 1 m strip-lines, at speed of light, takes 3.3 ns!• Tail Clipper requires short rise-time (≤ 5 ns) !.• In order that plate fill time does not significantly effect deflection rise time,

several sets of strip-lines, mechanically in series, will be required.

L/2

L/2

NcLTnsT r

25 +==

Beam Bunch

Where:

rT is permissible pulse rise time; L is overall length of strip-lines; N is number of sections; c = 3 x 108 m/s For: 1=L m & 2=N , rT =1.7 ns 1=L m & 3=N , rT =2.8 ns

Start pulse at 0T Start pulse at ⎟

⎠⎞

⎜⎝⎛ +

NcLT0



Tail Clipper: StatusTail Clipper: Status• A segmented stripline kicker is required – probably three sections each of 0.34m.

CIEMAT design for the CR strip-lines could be adapted to the tail-clipper:• Cost ?• Schedule ?

• Three fast rise-time bipolar high-voltage pulse generators are required. First measurements with Behlke HTS MOSFET switches (ATF and CERN) are promising and could be a full fall-back solution. However we consider it preferable to also continue development of stacked MOSFET switches for this application as they are more robust, modular, capable of higher voltages and potentially applicable to other CLIC kicker systems. One could envisage equipping two sets of the strip-lines with Behlke based switches and the third set of strip-lines with a SMS based switch.Cost & Manpower:

20 kCHF per Behlke based bipolar power supply;32 kCHF per SMS based bipolar power supply plus GreenPower costs;0.5 FTE Technician & 0.5 FTE Engineer.

Schedule: Early 2008.



ConclusionsConclusions• A temporary kicker system (ex e+ and e- injection into EPA) is presently

installed for the CTF3 CR extraction kicker.• CIEMAT have designed the strip-line electrodes for a new CTF3 CR

extraction kicker: strip-lines to be delivered to CERN mid 2007, with installation at the earliest subsequent opportunity (late 2007?).

• Collaboration to develop kicker technology required for future systems is ongoing but requires some ‘refocusing’.

• Who is providing tail-clipper?• More manpower is required at CERN for tail clipper development:

• 0.5 FTE Technician & 0.5 FTE Engineer;• Budget required for kickers (excludes strip-lines):

• 30 kCHF required for the stage 2 CR power supply reconfiguration;• Tail-clipper:

• 60 kCHF for three Behlke based bipolar power supplies, or preferably: • 72 kCHF for two Behlke based bipolar power supplies & one SMS

based bipolar power supply plus GreenPower costs.



Questions ??Questions ??



Pulse risePulse rise--timetime

0.0E+00

1.0E-09

2.0E-09

3.0E-09

4.0E-09

5.0E-09

6.0E-09

7.0E-09

1 2 3 4 5

Number of Sections

2L/(N

c)

Overall length=1m [3.2kV]Overall length=0.75m [4.3kV]Overall length=0.5m [6.4kV]Permissible Field Rise TimeOverall length=1m [3.2kV]

Permissible pulse rise time

0

2

4

6

8

10

12

14

0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1

Overall Length (m)

Req

uire

d Pu

lse

Volta

ge (k

V)



One StripOne Strip--line: 2L/(Nc)line: 2L/(Nc)

L

Beam inInput Pulse



StripStrip--lines: Angular Deflection Due lines: Angular Deflection Due To Magnetic and Electric FieldsTo Magnetic and Electric Fields

lcd

VpB *

*2

*3.0

⎥⎥⎥⎥

⎦

⎤

⎢⎢⎢⎢

⎣

⎡

⎟⎠⎞

⎜⎝⎛⎟⎟

⎠

⎞⎜⎜⎝

⎛=θ

These equations show that the deflection due to the magnetic field is independent of the impedance of the strip-lines.

⎟⎟⎠

⎞⎜⎜⎝

⎛=

cpdclV

E **)10*(***arctan 9 β

θ



TRIUMF Built TRIUMF Built MuLan/MuCap MuLan/MuCap KKickericker CardsCards

Fet Heat sink

Fibre optics shield Reverse side of card



HFBRHFBR--2528 Fiber Optic Receiver Delay2528 Fiber Optic Receiver DelayDelay of Edges through HFBR-2528 Receiver (various pulse widths, positive,

TTL input pulse) with a Reference HFBR-1528 Transmitter

9.80E-089.90E-081.00E-071.01E-071.02E-071.03E-071.04E-071.05E-071.06E-071.07E-071.08E-071.09E-071.10E-071.11E-071.12E-071.13E-071.14E-071.15E-071.16E-071.17E-071.18E-071.19E-071.20E-07

0 20 40 60 80 100 120 140 160 180 200

Excel Row Number

Del

ay o

f Edg

e (s

)

Delay(Ch2,Ch1) - back edge - 200nsDelay(Ch2,Ch1) - back edge - 5usDelay(Ch2,Ch1) - back edge - 100nsDelay(Ch2,Ch1) - front edge - 200nsDelay(Ch2,Ch1) - front edge - 5usDelay(Ch2,Ch1) - front edge - 100ns

>15 ns spread in delay



HFBRHFBR--1528 Fiber Optic Transmitter Delay1528 Fiber Optic Transmitter Delay

HFBR-1528 Transmitter Delay, measured data sorted on back edge delay, with a "Reference" HFBR-2528 Receiver

9.800E-089.850E-089.900E-089.950E-081.000E-071.005E-071.010E-071.015E-071.020E-071.025E-071.030E-071.035E-071.040E-071.045E-071.050E-071.055E-071.060E-071.065E-071.070E-071.075E-071.080E-071.085E-071.090E-071.095E-071.100E-071.105E-071.110E-07

0 4 8 12 16 20 24 28 32 36 40 44 48 52 56 60 64 68 72 76 80 84 88 92 96 100

104

108

112

116

120

124

128

132

136

140

144

148

152

156

160

164

168

172

176

180

184

188

192

196

Arbritary Number

Del

ay -

back

edg

e (s

)

Delay(Ch2,Ch1) - back edges - 200ns

Delay(Ch2,Ch1) - front edges - 200ns

Del

ay o

f edg

es (s

)

~5 ns ~8 ns



ILC Prototype Kicker (stacked ILC Prototype Kicker (stacked MOSFETs), 2005MOSFETs), 2005

ILC prototype kicker (development at TRIUMF)One FET stack; 5 kV pulses into a 100 Ω load;6 ns rise and fall times (10% to 90%); 1 kHz.

Output pulse. 10ns/div, 100 Ωload.

Post pulse noise is attributable to impedance mismatches.

Improved impedance matching (low power, low inductance,

load).One FET stack of

prototype PSI kicker.

4.6kV 0.5kV



DD--LightsysLightsys: Promising Source of : Promising Source of Fiber Optic ComponentsFiber Optic Components

• D-Lightsys was created at the end of year 2002. It was founded by former Thales Research and Technology scientists, with expertise in the fields of electronics, optoelectronics and severe environments requirements.

• D-Lightsys has previously provided Fiber Optic transmitters and receivers for a MOSFET application (included integrated driver) and has therefore addressed many of the issues.



SUMMARY OF FIBER SUMMARY OF FIBER OPTIC REVIEWOPTIC REVIEW

As previously agreed CERN has taken responsibility for reviewing F.O. Technology. The following table summarizes the review to date.

part# Vcc (rec) output Vo dc Vo High Vo Low output rise time(ns) output fall time(ns) PWD (ns)

Nominal Optical

Wavelength (nm)

Temp Data Rate Fiber Type Comment

A V A G O HFBR-2316T 4.75 to 5.25 analog 0.8(min),1.8(typ),2.6(max) 3.3(typ)5.3(max) 3.3(typ)5.3(max) 0.4(typ) 1.0(max) 1300 -40 to 85 DC to 125MHz Multimode Glass 2-70 MBd at HP

HFBR-2316TZ 4.75 to 5.25 analog 0.8(min),1.8(typ),2.6(max) 3.3(typ)5.3(max) 3.3(typ)5.3(max) 0.4(typ) 1.0(max) 1300 -40 to 85 DC to 125MHz Multimode Glass 20-155 at HP

HFBR-2406 4.75 to 5.25 analog -4.2(min),-3.1(typ)-2.4(max) 3.3(typ)6.3(max) 3.3(typ)6.3(max) 0.4(typ) 2.5(max) 820 -40 to 85 DC to 125MHz HCS 2-70 MBd at HPHFBR-2416 4.75 to 5.25 analog -4.2(min),-3.1(typ)-2.4(max) 3.3(typ)6.3(max) 3.3(typ)6.3(max) 0.4(typ) 2.5(max) 820 -40 to 85 DC to 125MHz HCS 2-70 MBd at HPHFBR-2416M 4.75 to 5.25 analog -4.2(min),-3.1(typ)-2.4(max) 3.3(typ)6.3(max) 3.3(typ)6.3(max) 0.4(typ) 2.5(max) 820 -40 to 85 DC to 125MHz HCS 20-160 MBd at HPHFBR-2416MZ 4.75 to 5.25 analog -4.2(min),-3.1(typ)-2.4(max) 3.3(typ)6.3(max) 3.3(typ)6.3(max) 0.4(typ) 2.5(max) 820 -40 to 85 DC to 125MHz HCS 20-160 atHPHFBR-2416TC 4.75 to 5.25 analog -4.2(min),-3.1(typ)-2.4(max) 3.3(typ)6.3(max) 3.3(typ)6.3(max) 0.4(typ) 2.5(max) 820 -40 to 85 DC to 125MHz HCS 20-160 MBd atHPHFBR-2416TCZ 4.75 to 5.25 analog -4.2(min),-3.1(typ)-2.4(max) 3.3(typ)6.3(max) 3.3(typ)6.3(max) 0.4(typ) 2.5(max) 820 -40 to 85 DC to 125MHz HCS 20-160 atHPHFBR-2416Z 4.75 to 5.25 analog -4.2(min),-3.1(typ)-2.4(max) 3.3(typ)6.3(max) 3.3(typ)6.3(max) 0.4(typ) 2.5(max) 820 -40 to 85 DC to 125MHz HCS 20-160 at HPHFBR-24E6 4.75 to 5.25 analog -4.2(min),-3.1(typ)-2.4(max) 3.3(typ)6.3(max) 3.3(typ)6.3(max) 0.4(typ) 2.5(max) 820 -40 to 85 DC to 125MHz HCS 2-70 MBd at HPHFBR-24E6Z 4.75 to 5.25 analog -4.2(min),-3.1(typ)-2.4(max) 3.3(typ)6.3(max) 3.3(typ)6.3(max) 0.4(typ) 2.5(max) 820 -40 to 85 DC to 125MHz HCS 20-160 at HPHFBR-2505A 4.75 to 5.25 CMOS/TTL 4.2(min)4.7(typ) 0.22(typ) 0.4(max) 12(typ) 30(max) 10(typ) 30(max) 650 -40 to 85 DC to 10MBd POF,HCSHFBR-2505AZ 4.75 to 5.25 CMOS/TTL 4.2(min)4.7(typ) 0.22(typ) 0.4(max) 12(typ) 30(max) 10(typ) 30(max) 650 -40 to 85 DC to 10MBd POF,HCSHFBR-2515B 4.75 to 5.25 CMOS/TTL 4.2(min)4.7(typ) 0.22(typ) 0.4(max) 12(typ) 30(max) 10(typ) 30(max) 650 -40 to 85 DC to 10MBd POF,HCSHFBR-2515BZ 4.75 to 5.25 CMOS/TTL 4.2(min)4.7(typ) 0.22(typ) 0.4(max) 12(typ) 30(max) 10(typ) 30(max) 650 -40 to 85 DC to 10MBd POF,HCSHFBR-2506AM 4.75 to 5.25 CMOS/TTL 4.2(min)4.7(typ) 0.22(typ) 0.4(max) -19(min) 19(max) 650 -40 to 85 DC to 16MBd POF,HCSHFBR-2506AMZ 4.75 to 5.25 CMOS/TTL 4.2(min)4.7(typ) 0.22(typ) 0.4(max) -19(min) 19(max) 650 -40 to 85 DC to 16MBd POF,HCS

* HFBR-2528 4.75 to 5.25 CMOS/TTL 4.2(min)4.7(typ) 0.22(typ) 0.4(max) 12(typ) 30(max) 10(typ) 30(max) -50(min) 50(max) Arbitrary cycle 650 -40 to 85 DC to 10MBd POF,HCS

HFBR-2528Z 4.75 to 5.25 COMS/TTL 4.2(min)4.7(typ) 0.22(typ) 0.4(max) 12(typ) 30(max) 10(typ) 30(max) -50(min) 50(max) Arbitrary cycle 650 -40 to 85 DC to 10MBd POF,HCS

TO S H IB A TORX194 4.75 to 5.25 TTL 2.7(mini) 0.4(max) -30(min) 30(max)width 100ns cycle 200ns 670 -40 to 85 DC to 10Mb/s PCF,APF

TODX283 4.75 to 5.25 TTL 2.7(mini) 0.5(max) -7(min) 7(max) 50Mb/s Random 650 -40 to 85 DC to 50Mb/s PCF,APF transmitter &

receiver

TrueLight TRR-1B43-000 4.5 to 5.5 1.5(min),2.5(typ),3.5(max) 4.5 4.5 1300 -40 to 85 DC to 125MHz Multimode Glass used TTC systems

D -Lightsys SLM-250-IQ-Pyz 3.3 to 3.6 analog 0.1(min),0.25(typ),0.35(max) 0.080(typ),0.15(max 0.080(typ),0.15(max) 850 -40 to 90 0.001 to 3.215GbpsMultimode Glass

transmitter & receiver

SLB-250-IS-Pyz 3.0 to 3.6 analog 0.1(min),0.25(typ),0.35(max) 0.080(typ),0.15(max 0.080(typ),0.15(max) 850 -40 to 90 0.08 to 3.3Gbps Multimode Glass

transmitter & receiver

DLR-XX-250-IQ-Pz-Lxx 3.0 to 3.6 analog 0.25(min),0.3(typ),0.4(max) 0.040(typ),0.12(max 0.040(typ),0.12(max) 850 -40 to 85 0.001 to 3.125GbpsMultimode

Glass 2,4,12 channels

M.J. BARNES, TRIUMF, CANADA.


Comparison of MOSFETsComparison of MOSFETsMOSFET Generation Volts Ipulse Pd (W) Package Iar

Idss (25C) [Vds=Vdss] Idss (125C)

Qgd (typ) [0.5Vdss]

Qg (typ)

Coss (pF)

Tjc (C/W)

Rise Time (ns)

Fall Time (ns)

Turn-on delay (ns)

Turn-off delay (ns)

Qrr (uC)

Rds(on) (Ohms)

DE150-102N02 1000 11 80 1.25 4 4 4 4 11.00IRFPG30 1000 12 125 TO-247 3.1 100uA 500uA 42nC 80nC 1 24 29 12 89 1.3IRFPG40 1000 17 150 TO-247 4.3A 100uA 500uA 65nC 120nC 0.83 33 30 15 100 1.9 3.50APT1004 4 1000 17.6 180 TO-247 250uA 1mA 18nC 35nC 115 0.68 10 14 12 33 1.65 4.00IRFPG50 1000 24 190 TO-247 6A 100uA 110nC 190nC 0.65 35 36 19 130 3.5 2.00

IXFH6N100F (IXYS) 1000 24 180TO-268 & TO-247 6

50uA (80% Vdss) 1mA 22nC 54nC 0.25 14 14 12 32 0.8

APT1201R6BVR 5 1200 32 280 TO-247 8A 25uA 250uA 78nC 155nC 0.45 10 15 12 50 7 1.60

APT1201R4BLL 7 1200 36 300 TO-247 12A 100uA 500uA 48nC 91nC 309 0.42 9 23 14 44 7 1.40

APT1001 4 1000 44 310 TO-247 250uA 1000uA 47nC 90nC 360 0.4 16 24 15 64 4.5 1.00

APT10090BLL 7 1000 48 300 TO-247 12A 100uA 500uA 52nC 78nC 338 0.42 5 8 10 26 9 0.90

DE275-102N06A 1000 48 375 6A50uA (80%

Vdss) 1mA 30nC 50nC 0.33 2 4 3 5 0.6 2.00

DE275X2-102N06A 1000 48 750 6A50uA (80%

Vdss) 1mA 30nC 50nC 0.33 2 4 3 5 0.6 2.00

IXFH12N100F (IXYS) 1000 48 300TO-268 & TO-247 12A 50uA 1.5mA 42nC 77nC 0.42 10 12 12 31 0.8 1.05

APT1201R2BLL 7 1200 48 400 TO-247 12A 100uA 500uA 59nC 99nC 391 0.31 9 21 14 44 11 1.20

APT10078 7 100 56 400 TO-247 14A 100uA 500uA 59nC 93nC 429 0.31 8 9 9 30 7.87 0.78

DE375-102N10A 1000 60 550 10A50uA (80%

Vdss) 1mA 40nC 90nC 0.23 3 5 5 8 0.6 1.20

DE375-102N12A May-06 1000 72 550 12A50uA (80%

Vdss) 1mA 42nC 93nC 305 0.23 3 5 5 8 0.6 1.07

APT12067xLL 7 1200 72 565 TO-264 18A 100uA 500uA 105nC 176nC 690 0.22 11 18 19 52 22 0.67

APT12057 7 1200 88 690TO-264 & TO-247 22A 100uA 500uA 126nC 211nC 830 0.18 12 21 21 58 25.5 0.57

APT10045 7 1000 92 565TO-264 &

TMAX 23A 100uA 500uA 97nC 154nC 715 0.22 5 8 10 30 5.5 0.45

DE475-102N20A 1000 120 600 20A50uA (80%

Vdss) 1mA 70nC 160nC 0.2 5 5 5 5 0.6 0.60

DE475-102N21A May-06 1000 144 1800 21A50uA (80%

Vdss) 1mA 77nC 160nC 200 0.08 5 5 5 8 0.6 0.41

APT12057B2FLL_LFLL 7 1200 88 690 TO-264 22A 250uA 1mA (80%

Vdss) 120nC 185nC 770 0.18 20 21 11 36 18 0.57

DRF1200 (APT) 1000 1050 12A 165 0.13 0.90

m.j. barnes & t. fowler kickers for ctf3 · m.j. barnes kickers for ctf3 ctf3 collaboration...

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