igct presentation
TRANSCRIPT
Introduction
Thyristor technology is inherently superior to transistor
GTO with its snubbers and IGBT with is high losses
GTO drive technology results in costly dv/dt and di/dt snubber circuits
GCT combines the thyristor and transistor characteristics
IGCT- Combination of GCT and low inductance gate unit without snubbers
Circuit and Equivalent circuit
Two transistor equivalent circuit
Fabrication
IGCT combines power handling device and the device control circuitry
Permits integration of free wheeling diode and snubberless operation
Features of IGCT
Improved GTO switching characteristics
Reduced turn-off and on-state losses
Reduced gate drive requirements
High frequency operation for continous and dynamic condition
Integration of main switches
Development of antiparallel diodes
Improved GTO switching characteristics
Improved at high power with the hard driveo Integrated gate drive commutates
the cathode current to zero
The hard gate drive converts the thyristor from its pnp latching state to pnp mode within 1microseconds.
Reduced on-state and turn-off losses
Reduction in device thickness is achieved by introducing a buffer layer on anode side.
Table compares he improved characteristics of IGCT with GTO thyristor.
Snubberless turn-off with anti-parallel diodes
Upgraded high-power presspack diodes manufacture using irradiation process
Inverter operation
di/dt control is achieved with an inductor, clamped by a diode and a resistor
Capacitor in the input makes the input dc voltage constant. Also suppresses the harmonics fed back to the source.
Output Waveform
Application of IGCT
Main advantage is its ability to turn-off in 2 microseconds.
With IGCT it is possible to build less costly, more reliable & more compact power control systems including
oRailway power supply frequency changers
oStatic Var Compensator for power factor control
oPump and fan drives for chemical, oil and power sectors
oLocomotive drivesoStatic breakers
Conclusion
The IGCT combines all the important innovations needed for future power electronics applications. It enables simple and robust series connection to turn-off devices for high power applications. The additional advantages of IGCT is its low cost, low complexity and high efficiency.
Reference
ABB review on Power semiconductor, May 1998
Power electronics by B.S Bimbra
Power electronics by Mohd. H. Rashid
IGCT characteristics
Turn-on characteristics
Turn-off characteristics
IGCT-A new emerging technology for high-power, low-cost inverters
Presented by
Mohammed Jamshid S7-EEE
Under the guidance of,Mrs. Sobha.MAsst.Professor