high speed (207 ghz f ), low thermal resistance, high current density metamorphic inp/ingaas/inp...
TRANSCRIPT
High speed (207 GHz f), Low Thermal
Resistance, High Current Density Metamorphic InP/InGaAs/InP DHBTs grown on a GaAs Substrate
Y.M. Kim, M. Dahlstrǒm, S. Lee, Y. Wei, M.J.W. Rodwell, A.C. Gossard
Department of Electrical Engineering, Materials Department,
University of California, Santa Barbara
Technical Objective
Growth of InGaAs/InAlAs/InP HBTs on GaAs substrates
….with low leakage and high yield
….for low-cost high-volume manufacturing of InP HBT integrated circuits on 6" diameter substrates
Gives basic data for growth which is free of lattice constant limit
Why InP-based HBTs ?better device bandwidth than GaAs or Si bipolar transistors
microwave ADCs, DACs, digital frequency synthesisbetter Emaxvsat than GaAs
millimeter-wave power
Why metamorphic HBTs ?--economic argumentlow cost, high volume processing: wafer size is critical GaAs substrates, processes: 6" diameter now large InP substrates:
high cost, high breakage, only 4" available todaybreakage much worse with 6" wafers
grow InP-based HBTs on GaAs substrates for cost and manufacturability
Metamorphic HBTs
InGaAs/InP or InGaAs/InAlAs HBT on a GaAs substrate
Lattice mismatch between substrate and epitaxial device layersThick intervening buffer layer to capture most defects
InGaAs base
emitter
base
collector
InAlAs or InP emitter
InP or InGaAs collector
InP or InGaAs subcollector
buffer layer: captures defects
GaAs substrate
Why might M-HBTs be harder than M-HEMTs ?
Much thicker depletion regions: base-collector (2kÅ) vs. gate-channel junctions (200 Å)1,000--10,000 times more active device area defect density, thermal resistance: more serious concerns
source drain
GaAs substrate
gate
emitterbase
GaAs substrate
collector
HBT HEMT
What are the potential problems ?
emitter
base
collector
GaAs substrate
Defects collapse in DC gain recombination in e/b junction surface recombination recombination in base generation in collector
Thick (ternary) buffer layer poor thermal conductivity
RHEED of metamorphic layer
AlGaAsSb InAlAs
InP
• Show the streak lines
• Indicate good surface
morphology
Morphology of metamorphic layer
AlGaAsSb InAlAs
InP
AFM image of metamorphic layer
Metamorphic
buffer
Surface roughness
(nm)
AlGaAsSb 4.0
InAlAs 11.7
InP 9.5
AlGaAsSb InAlAs
InP
Thermal Conductivity Measurement
• Pattern a 1x100 μm Pt line – 50 nm thick
• Measure the resistance with varying input power
• As the input power increases, the Pt wire gets hot and the resistance increases.
• Resistance change is determined by the thermal conductivity of underlying layer.
• Extract thermal conductivity of film from finite element simulation.
GaAs subst.
Metamorphic layer
Pt wire
Results and Junction Temperature Calculation
Metamorphic
buffer
Thermal conductivity
(W/mC)
AlGaAsSb 8.4
InAlAs 10.5
InP 16.1
GaAs bulk 44
InP bulk 69
InP buffer has best thermal conductivity though it is smaller than bulk value.
GaAs 350 μm
Metamorphic layer 1.5 μm
HBT 8 μm x 0.5 μm1000 μm
1000 μm
• 30 HBTs with 45 μm device separation
• Solve the 3D Laplace eq. to determine junction temp. as function of thermal conductivity
• power density : 200 kW/cm2
Thermal Conductivity vs. HBT Temp.
0
100
200
300
400
500
600
700
0 10 20 30 40 50
Thermal conductivity of metamorphic buffer layer (W/mK)
AlGaAsSb (128°C)
InAlAs (112°C)
InP (89°C)
Without metamorphic (65°C)
• Power density
: 200 kW/cm2
• 0.5 m x 8 m emitter device
• 30 HBTs with 45 m device seperation
Power density vs. HBT Temp.
0
50
100
150
200
250
300
0 1 2 3 4 5 6
Power density (105 W/cm2)
AlGaAsSb
InAlAs
InP
No metamorphic
• High power density is required for future device.
• Need high thermal conductivity buffer layer
Expected Reliability of HBT
Failture Criterion : 5% increase in VBE
1.E+02
1.E+03
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
1.5 2 2.5 3
1000/T(K)
MT
TF
(hr
)
InP
InAlAs
AlGaAsSb
Metamorphic
buffer
Life time relative to
AlGaAsSb HBT
AlGaAsSb 1
InAlAs 6.3
InP 119
• Long life time shows that InP buffer is essential in metamorphic HBT from thermal point of view.
Ref) K.Kiziloglu et al. IPRM, 294 (2000)
Mesa structure for RF measurement
Advantage of mesa structure
• Adequate for metamorphic HBT due to the excellent heat flow
• High speed operation
GaAs substrate
Metamorphic buffer (InP, InAlAs,AlGaAsSb)
In0.53Ga0.47As subcollector
InP collector
In0.53Ga0.47As base
InP emitteremitter
base
collector
Structure of metamorphic M-DHBT
Emitter cap In0.53Ga0.47As : Si (2x1019 cm-3) 300 Ǻ
Emitter grade In0.53Ga0.47As/In0.52Al0.48As : Si (2x1019 cm-3) 200 Ǻ
EmitterInP : Si (1x1019 cm-3) 700 Ǻ
InP : Si (8x1017 cm-3) 500 Ǻ
Grade In0.53Ga0.47As/In0.52Al0.48As : Si (4x1017 cm-3) 280 Ǻ
Base In0.53Ga0.47As : Be (4x1019 cm-3) 400 Ǻ
SetBack In0.53Ga0.47As : Si (2x1016 cm-3) 100 Ǻ
Grade In0.53Ga0.47As/In0.52Al0.48As : Si (2x1016 cm-3) 240 Ǻ
Delta doping InP : Si (5.6x1018 cm-3) 30 Ǻ
Collector InP : Si (2x1016 cm-3) 1630 Ǻ
Sub collector In0.53Ga0.47As : Si (1x1019 cm-3) 250 Ǻ
Sub collector InP : Si (1x1019 cm-3) 1250 Ǻ
Buffer InP 1.5 μm
GaAs (100) semi-insulating substrate
• 500Ǻ thick and 8e17/cm3 n-doped emitter1 layer was grown for low Cje
• 400 Ǻ base with 50 meV bandgap grading
• 100 Ǻ setback layer was introduced
• 2000 Ǻ collector
• 1.5 μm InP metamorphic layer was grown at 470oC on GaAs wafer
0
10
20
30
40
0.1 1 10 100 1000frequency (GHz)
h21
U
ft = 207 GHz
fmax
= 140 GHz
InP/InGaAs/InP Metamorphic DHBTon GaAs substrate
Growth: 400 Å base, 2000 Å collector GaAs substrate InP metamorphic buffer layer
(high thermal conductivity)Processing conventional mesa HBT narrow 2 um base mesa, 0.4 um emitterResults 207 GHz ft, 140 GHz fmax,
6 Volt BVCEO, =76
0
2
4
6
8
10
12
14
0
1 105
2 105
3 105
4 105
0 1 2 3 4 5 6J (A
/cm2 )I C
(m
A)
VCE
(V)
Gummel curves
Large area (60m x 60m)
Small area (0.4m x 0.75m)
10-8
10-7
10-6
10-5
10-4
10-3
10-2
10-1
0 0.2 0.4 0.6 0.8 1
I C,
I B (
A)
VBE
(V)
VCB
= 0.3 V
IC
IB
IC
IB
• Small area device shows larger leakage current than large area device.
The leakage current source is not the growth defect.
pad to pad leakage turned out to be the source.
There may be surface leakage through the side wall.
More study is being tried
InP/InGaAs/InP Metamorphic DHBTon GaAs substrate
50
100
150
200
0.5 1 1.5 2 2.5 3VCE
(V)
ft
fmax
80
100
120
140
160
180
200
220
0 1 105 2 105 3 105 4 105 5 105
Current density (W/cm2)
ft
fmax
4 10-12
5 10-12
6 10-12
7 10-12
8 10-12
9 10-12
1 10-11
1.1 10-11
0 100 200 300 400 5001/I
C (1/A)
1/ft
1/fmax
VCE = 1.5V
VCE = 1.5V
J = 3.2e5 A/cm2
Summary
• Several materials were tried for metamorphic
buffer layer
• InP was chosen because of high thermal
conductivity
• Highest speed for MHBT was acquired
• More study is needed for reducing leakage current