gan brings about a new way of thinking to power...
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GaN Brings About a New Way of Thinking to Power ConversionStephen Colino
Efficient Power Conversion Corporation
1
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GaNWide Bandgap Hetero Junction
• Wide Bandgap– Shorter distance required to support voltage
• Hetero Junction– Forms 2 Dimensional Electron Gas (2DEG)– Electrons not bound to any particular atom– Higher conductivity
• GaN is still far from theoretical limits
EPC – The Leader in GaN Technology www.epc-co.com 2
GaN
Si
Distance electrons need to travel
Conductivity
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Dielectric
GaN
Si
AlGaN Electron Generating Layer
Aluminum NitrideIsolation Layer
DGS- - - - - - - - - - - - - - -- - - -
eGaN FET Structure on Silicon
Two DimensionalElectron Gas (2DEG)
• For a given RDS(on) and VDS capability– Smaller device– Lower Capacitance– Zero QRR– Lower Inductance
+-
EPC – The Leader in GaN Technology www.epc-co.com 3
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7980818283848586878889909192
2 6 10 14 18 22 26 30 34 38 42 46 50
Effic
ienc
y (%
)
Output Current (A)
GaN Circa 2014
GaN Circa 2010
GaN Circa 2012
GaN Circa 2015
VIN=12 V, VOUT=1.2 V, fsw=1 MHz
GaN Developing Quickly
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GaN Versus SiliconParameter Conditions EPC2045 BSC070N10NS5
RDS(on) (typ) VGS = 5 V*, TJ = 25 °C 5.6 mΩ 6 mΩQG (typ) VGS = 5 V, VDS = 50 V, ID = 16 A* 5.2 nC 30 nCQGD (typ) VDS = 50 V 1.1 nC 6 nCQSW (typ) VGS = 5 V, VDS = 50 V, ID = 10 A* 1.6 nC 11 nCQOSS (typ) VDS = 50 V 21 nC 30 nCEOSS (typ) VDS = 50 V 0.4 µJ 1.45 µJ**QRR (typ) VDS = 50 V, IF = 20 A, diF/dt = 100 A/µs 0 nC 89 nC
LCS (estimated) 0.1 pH 0.5 pH
RG (typ) 0.6 Ω 1 ΩRDS(on) x QSW Switching FOM 8.96 mΩ nC 70.4 mΩ nC
RDS(on) x (QOSS + QRR) Rectifier FOM 118 mΩ nC 624 mΩ nC
RӨ(JC) Thermal impedance to top 1.4 °C/W 20 °C/W
Area 3.75 mm2 31.7 mm2
EPC – The Leader in GaN Technology www.epc-co.com 4
*VGS = 10 V, ID = 40 A for BSC070N10NS5**Estimated by taking second integral of COSS versus CDS curve
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Wafer Level Packaging
EPC – The Leader in GaN Technology Company Confidential Information www.epc-co.com 7
• Single interface with PCB• No wires or clips• Active area Intimate with PCB for inductance cancelling • RoHS 6 of 6• MSL-1
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What eGaN Technology Has Less Of
• Less parasitic capacitance and inductance– Efficient at high frequency– Less overshoot and ringing
EPC – The Leader in GaN Technology www.epc-co.com 8
10 V/ div 10 A 20 ns/ div
80 V Si MOSFET
10.3 mΩ100 V eGaN FET
5.6 mΩ
LCS
CGS
CDS
CGDRG
LD
QRR
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WLP - Excellent Thermally
• Dual Sided Cooling• Gap Filler• Thermal interface (electrically isolating)• Heatsink
– (200 PSI max)
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What Does Fast,Low Loss Switching Buy?
EPC – The Leader in GaN Technology www.epc-co.com 10
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11
Heat-sink
Sensor
Kapton
Sensor leads
RTV adhesive
EPC – The Leader in GaN Technology www.epc-co.com
Extreme Output Power @ High Frequency
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Extreme Output Power @ High Frequency
Steps indicate duration to reach thermal equilibrium
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15
20
25
30
35
40
45
50
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60
75
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0 10 20 30 40 50 60 70 80 90 100 110 120 130
Tota
l Pow
er L
oss [
W]
Effic
ienc
y [%
]
Time [minutes]
EPC2047 Duration Heatsink Test
250kHz Eff
200 kHz Eff
250kHz Loss
200 kHz Loss
EPC – The Leader in GaN Technology www.epc-co.com
140 V in 28 V out stepped to 34 A
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Increase Bandwidth in Power Supplies for Base Stations
• PA with constant voltage acts as constant power dissipater• GaN enables high bandwidth power supply• 4 phase, 60 W
– 92% Power system efficiency– 20 MHz, 7 dB PAPR LTE envelope signal
EPC – The Leader in GaN Technology Company Confidential Information www.epc-co.com 13
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Reduce Notebook and Tablet Size
• 100 nH inductor• Reduces board system height• Reduces voltage regulator footprint
EPC – The Leader in GaN Technology Company Confidential Information www.epc-co.com 14
3 mm x 1.5 mm half bridge50 mm2 x 1.2 mm high
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Reduce Size and Cost of 48 V to 12 V
EPC – The Leader in GaN Technology www.epc-co.com 15
600 W Isolated 600 W Isolated 500 W Buck (or Boost)f 100 kHz 200 kHz 500 kHz 1 MHz
L 6.8 uH 3.3 uH 1 uH 0.68 uH
IPP 13.2 A 13.6 A 18 A 13.2 A
Inductor IHLP8787GZ-51 IHLP6767GZ-51 IHLP5050CE-01 IHLP3232DZ-01
Size (mm) 22 x 22.5 x 13 17 x 17.2 x 7 12.9 x 13.2 x 3.5 8.2 x 8.6 x 4
DCR (mΩ) 3.09 3.27 3.5 3.67
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Wireless Power Transfer
• 6.78 MHz and 13.56 MHz magnetic resonance• Power into the body• Power a desk• 100 W + demonstrated
EPC – The Leader in GaN Technology www.epc-co.com 16
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Find the Richness in Music
• Where’s the heatsink?• Increased open loop linearity reduces
magnitude of feedbackEPC – The Leader in GaN Technology www.epc-co.com 17
FFT from 20 Hz to 20 kHz of a 1 kHz signal at -60 dBr
400 W into 4 ohms2.11 mm
1.63 mm
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Increase Resolution of3D Imaging
EPC – The Leader in GaN Technology www.epc-co.com 18
• LiDAR 3D imaging systems chase the speed of light (30 cm/ns (1 ft/ns))
• Breaking distance is 150 m at 160 km/h• Identify the object
43 A, 75 V, 2.8 ns, Laser Driver IC
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Conclusions
• GaN provides fast, low loss switching• Fast, low loss switching enables different
ways to solve power conversion and deliver problems
EPC – The Leader in GaN Technology www.epc-co.com 19