“SiC Cascodes and its advantages in power electronic applications”“WBG Power Conference“, Munich, 5th December 2017

Christopher Rocneanu Director Sales Europe and North America

cro@unitedsic.com+4915121063411

USCi History

1999 2009 2010 2011 2012 2013 2014 2015 2017 2018

Established 4” foundry

relationship

Released the xR 1200V & 650V JBS diode series and the 1200V

Normally-on JFETs

Acquired and recapitalized by

current board and management team 6” wafer line qualification

& production; Cascode 650V/1200V release

MOSFET R&D

Company Founded

First foundry-based diodes and JFETs

manufactured

Built Pilot Production Fab

Initiated 6” Fab Transfer

• TS16949

2

650V & 1200V 6’’ AECQ SiC JBS Diode qualified

• TS16949

SiC Technology Focus Areas

3

World class performance in higher voltage devices

Schottky Diodes

Wide Band Gap Schottky Diodes &

SiC Module Die

Market Areas Addressed—Taking Today’s Silicon Approaches to the Next Level

650V – >10kV

Spanning Across the Voltage Spectrum

Power supplies, EV battery, solar inverters

Normally-Off Devices for Superior Performance in Switching Applications

Cascodes

IGBT Discretes & Silicon

Superjunction

650 – 1700V

Power supplies, EV battery, solar inverters

Normally-On Devices ideally suited for current limiting

and protection

SiC JFETS

Circuit Protection

650 – 6.5kV

Circuit breakers, TVS, current limiters

Standard Platforms can be customized for unique

applications

Custom Products / ICs

Integrated Circuits & High Temperature

Die

50V

High temperature or extreme environment

applications

With a Multitude of Product Applications

SiC MOSFETS

HV Si MOSFETs IGBTs

3300V – 10kV

Medical, Traction, solar inverters

Well Suited to 3.3-6.5KV applications

R&D

Product Lineup 6 inch G3 JBS diodes

4

Family Base PN Description Samples RTM Die T0-220-2L TO247-3L D2PAK-Flat (F5) SOT227

650V UJ3D06504 4A 650V JBS Diode Q3 17 Q4 17 MP D D

650V UJ3D06506 6A 650V JBS Diode Q3 17 Q4 17 MP D D650V UJ3D06508 8A 650V JBS Diode Q3 17 Q4 17 MP D D

650V UJ3D06510 10A 650V JBS Diode Available MP MP D

650V UJ3D06512 12A 650V JBS Diode Q4 17 Q1 ‘18 Q1 ‘18 D

650V UJ3D06516 16A 650V JBS Diode Q4 17 Q1 ‘18 Q1 ’18

650V UJ3D06530 30A 650V JBS diode Available MP MP MP

650V UJ3D06560 2X 30A 650V JBS diode Available MP MP

650V UJ3D065200 200A 650V JBS diode Available Q1 18 D D

MP: Mass Production ES: Engineering samples available D: in Development

Family Base PN Description Samples RTM Die T0-220-2L TO247-3L D2PAK-Flat (F5) SOT227

1200V UJ3D1202 2A 1200V JBS diode Available MP MP MP D

1200V UJ3D1205 5A 1200V JBS diode Available Q4 ’17 MP MP D

1200V UJ3D1210 10A 1200V JBS diode Available MP ES ES

1200V UJ3D1220 2X 10A 1200V JBS diode Q4 ’17 Q4 ’17 - ES1200V UJ3D1250 50A 1200V JBS diode Available MP MP MP

1200V UJ3D12100 100A 1200V JBS diode ES Q2 ’18 ES D

D2PAK FLAT (F5): Better Thermal and creepage

New unique and pin to pin compatible

package:

• Pin to pin compatible to D2PAK 2L

• Better thermal behaviour

• Samples available:

• 1200V, 2A.5A,10A, 20A

• 650V, 4A, 6A, 8A, 10A, 20A

5USCi Confidential

High Current Diode in Hybrid Application

6USCi Confidential

Benefits available by swapping die, no system change needed

Normally OffUSCi SiC FET

USCi’s Switch Technology Compared to SiC MOSFETs

Die Size (Smaller) RDSA~ 1.75mΩ-cm2 (Larger) RDSA~ 3.1- 4.5 mΩ-cm2

Gate Drive (Standard) VGS = 0V to 12V OR(SIC) VGS = -25V to 25V VGS = -5V to 20V

Threshold VGS(TH) = 5V Typical VGS(TH) = 2.2V Typical

Intrinsic Diode VSD=1.5V, Low Qrr, +10% Over Temperature

High VF, High Qrr, 3X Over Temperature

Avalanche Yes Yes

Short Circuit 4 us guaranteed, 8us typical Low

ESD protection integrated n/a

Integrated LV Si-MOSFET

Additional Antiparallel SiC

Diode

Normally OffTypical SiC MOSFET

7USCi Confidential

RDS,A (active area) Comparison in 650V class devices

8USCi Confidential

Cascode Operation

9USCi Confidential

Gate Drive requirements

USCi Confidential10

• Easy Drop-in 12V turn-on makes SiC cascode an easy choice for drop-in replacement.

• Extra Margin in VGSSiC cascode has higher margin in VGS design and requires no negative VGS for turn-off.

• Integrated safety featuresIntegrated clamping diode protects gates from |25V| and adds ESD protection

• True Second source to any Si [IGBT, SJFET] and SIC MOSFET

Maximum VGS rating vs. recommended VGS

20V

-20V

0V 12 V

25V

-25V According to Competitor R SIC Trench MOSFET Gen 3 with VGS<15V is expected to have thermal Run Away & significant higher losses!

SiC Cascode12V / 0V

Si IGBT + SJFET15V/0V, 12V/0V

22V

-6V

G2 SiC MOSFETCompetitor R

18V/-3V

-8-3V

19V

0G3 SiC MOSFETCompetitor W

15V/-4V

-10V

25V

0

G2 SiC MOSFETCompetitor W

20V/-6V

SiC Device 3rd Quadrant Operation

11

USCi’s SiC Cascode UJC1210K SiC MOSFET C2M0080120D

Knee Voltage = 0.7V Knee Voltage = 2.1V

Low VF eliminates need for separate anti-parallel diode

(Datasheet comparison)

USCi Confidential

Cascode versus SiC MOSFET Reverse Recovery

12

trr <40ns

• Performed on in-house double-pulse tester• Gate-source shorted, VGS = 0 V• 800 V inductive load

150 °C, 800 V, 11aA, 1500 A/µs

USCi Confidential

USCi Confidential 13

UJC1210KVGS: 18V / -5V

Rgon = 2.3 Ω, Rgoff = 10 Ω, Eon = 406 uJ

di/dt = 1.28 A/ns, dv/dt = 69 V/ns

C2M080120DVGS: 18V / -5V

Rgon = 5 Ω, Rgoff = 5 ΩEon = 446 uJ

di/dt = 2.1 A/ns, dv/dt = 71 V/ns

-7

0

7

14

21

28

35

42

-200

0

200

400

600

800

1000

1200

ID (A

)

VDS

(V)

time (20 ns/div)

VDS

ID

Eoff = 101 uJdi/dt = 4.2 A/ns, dv/dt = 86 V/ns

Eoff = 115 uJdi/dt = 2.3 A/ns, dv/dt = 60 V/ns

-7

0

7

14

21

28

35

42

-200

0

200

400

600

800

1000

1200

ID (A

)

VDS

(V)

time (20 ns/div)

VDSID

-7

0

7

14

21

28

35

42

-200

0

200

400

600

800

1000

1200

ID (A

)

VDS

(V)

time (20 ns/div)

VDSID

-7

0

7

14

21

28

35

42

-200

0

200

400

600

800

1000

1200

ID (A

)

VDS

(V)

time (20 ns/div)

VDSID

HALF BRIDGE SWITCHING 20A, 800V, 125C@50% smaller SiC Die Size!

Cascode 3rd Quadrant Operation

14

• SiC cascode is fully on with gate-source voltage between 10 to 20 V, just like a MOSFET• Current flows in either direction through JFET• Reverse current flows through MOSFET body diode or through MOSFET channel• In all cases, JFET gate-source voltage is essentially zero; JFET is fully on

D

S

G

+ VGS_JFET – +

VDS_MOSFE

T

–

VGS 0

0VDS

0VGS_JFET

SiCCascode

Forward current

D

S

G

+ VGS_JFET – +

VDS_MOSFE

T

–

VGS 0

0VDS

0VGS_JFET

SiCCascode

Reverse current, synchronous

D

S

G

+ VGS_JFET – +

VDS_MOSFE

T

–

VGS 0

0VDS

0VGS_JFET

SiCCascode

Reverse current, non-synchronous

USCi Confidential

Product Lineup Gen 2 SiC FETs

15

Family Base PN Description Samples Production Die T0-220 TO247-3L TO247-4L D2pak-3L

1200V Cascode UJC1206K 1200V 60mΩ SiC Cascode Available MP MP MP

1200V Cascode UJC1210K 1200V 100mΩ SiC Cascode Available MP MP MP

1200V Cascode UJC1220KS 1200V 220mΩ SiC Cascode Available ES ES ES

650V Cascode UJC06505K 650V 45mΩ SiC Cascode Available MP MP ES MP

MP: Mass Production ES: Engineering samples available D: in Development

USCi Confidential

Family Base PN Description Samples Production Die T0-220 TO247-3L TO247-4L D2pak-3L

1200V JFET UJN1208K 1200V 80mΩ SiC JFET Available MP MP MP

1200V JFET UJN1205K 1200V 45mΩ SiC JFET Available MP MP MP

+2V

-15V

Normally On

No gate oxideFor high temperature operation

No Intrinsic Diode

Normally Off (Cascode)

Intrinsic Diode(Inductive Loads)

+12 V

30V Si MOSFETAvailable Co-Packaged

1.2kV SiC JFET

+0 V

Product Lineup Gen 3 SiC FETs

16USCi Confidential

Family Base PN Description T0-220 TO247-3L TO247-4L D2pak -7L D2pak-3L

1200V Cascode UJ3C120015K3S 1200V 150mΩ SiC Cascode - Q1 ’18 Q3 ‘18 Q1 ‘18

1200V Cascode UJ3C120080K3S 1200V 80mΩ SiC Cascode - ES/ Q1 ’18 Q3 ‘18 D

1200V Cascode UJ3C120040K3S 1200V 40mΩ SiC Cascode - ES/ Q1 ’18 Q3 ’18 D

1200V Cascode UJ3C120020K3S 1200V 20mΩ SiC Cascode - - Q3 ‘18 D

650V Cascode UJ3C065080K3S 650V 80mΩ SiC Cascode Q2 ’18 ES/ Q1 ’18 D D ES / Q2 ‘18

650V Cascode UJ3C065042K3S 650V 42mΩ SiC Cascode Q2 ’18 Q2 ’18 D D D

650V Cascode UJ3C065030K3S 650V 30mΩ SiC Cascode Q2 ’18 ES/ Q1 ’18 D D ES / Q2 ‘18

MP: Mass Production ES: Engineering samples available D: in Development

650V Cascode

17

UJC6505TCascode

SCT2120AFSiC MOSFET

GS66508BGaN HEMT

IPW65R045C7Si Superjunction

PFSB Efficiency Vin=400V, Vo=48V, 75kHz

USCi Confidential

Customer Reference

18

+

• Technological partnership• Phase shifted Full bridge

(need for an excellent body diode)• 10kW battery charger• 30% higher output power with SiC Cascode in

same dimensions• IGBT replacement and ease of use through

Standard Gate drive • 1.5% higher efficiency

=

Customer Reference

19

+• Bidirectional converter which is used today in around

50% of the DC Fast Charger in Europe today• No external SiC Schottky diode in hard switched

application needed due to significant reduced body diode (<2V) compared to SiC MOS

• System Cost reduction due to Cascode usage • Modular reliable systems with proven technology up to

150kW• Uni and bidirectional from 6kW up to 25kW with V2G /

V2H operation• CHAdeMO and CCS compatible• 97% efficient, 500V DC and 1000V DC• Noiseless Power

=

Behlke

USCi Confidential20

6.5kV SiC Module

Applications Variable Speed Industrial Motor Drives HV Battery Stacking Transformerless Grid-Tie Heavy Vehicle Traction Converters Hybridization of Ships Flywheel: High Voltage Stators

The 4.5-6.5kV Modules targets higher power (MW)applications where systems can benefit from higherDC-Link voltages and faster switching frequencies:

GVEA BESS5kV DC-Link

(Alaska)

Trains

USCi Confidential

3300V MOSFETs

USCi Confidential22

Rds,on Breakdown (mΩ•cm2) Value Percentage

Source + Channel 1.91 19.1%JFET 1.94 19.5%Epi 5.98 59.9%

Sub + B/S 0.15 1.5%Total 10.0 100%

Source + Channel; 1,91; 19%

JFET; 1,94; 19%Epi; 5,98;

60%

Sub + B/S; 0,15; 2%

Rds,on Breakdown (mΩ•cm2)

With +15V/-5V gate drive similar to IGBTs, RdsA

increases to 11.2mohm-cm2 with 10us Short

circuit withstand capability.

Preliminary Die Datasheet of 1700V -7.5mΩ SiC JFET

Technical Approach

USCi Confidential

USCi prototype demonstrated

In development

USCi Confidential

Technical ApproachComparison with Other Unipolar Approaches

Approach SiC MOSFET Only SiC Stack Cascode Proposed Module

SiC Chip Technology

Die 6.5kV MOSFET Chip 6.5kV JFET Chip 1.7kV JFET Chip

RDSA 63mΩ-cm2 63mΩ-cm2 3mΩ-cm2

Die Size 8.33 x 8.33 mm2 8.33 x 8.33 mm2 7.7 x 7.7 mm2

Die Max. Ron @ RT 160mΩ 160mΩ 5.5mΩ

Half-Bridge Module

Technology

Max. Ron @ RT 20mΩ 20mΩ 20mΩ

Switch Configuration 8 dies in parallel 8 dies in parallel 5 JFETs (each contains 2 dies in parallel) in series

Total Die Count 16 16 20

Projected Module Cost Structure(150mm epi-wafer, ~70% die yield) $20 / A $20 / A $11 / A

Module Performance

Typical VTH @ 150°C 2.0V 3.7V 3.7V

Practical Gate Drive -5V to + 20V Standard 0V to +12V Standard 0V to +12V

Gate Charge

Qgs 400 nC 120 nC 30 nC

Total Qg 2360 nC 400 nC 100 nC

Anti-Parallel Diode

Built-in Built-in Built-in

High Qrr Low Qc Low Qc

Knee voltage: > 2V Knee voltage: 0.7V Knee voltage: 0.7V

USCi Confidential

• Due to the use of lower cost SiC 1700V devices, module cost 2X lower• Much better gate charge and diode Qc

Ultra Low RDS,on devices –Solid State Circuit Breaker

USCi Confidential27

Summary

28

SiC Diodes • Best-in-class performance

• Highest currents available

• USCi matched with industry leading die sizes (cost)

SiC JFET• Best in class devices for special applications

SiC Cascodes• Ease of use (12V/0V or 20V / -5V Gate Drive)

• Performance (Low Vf , Qrr Body-diode, switching energies)

• Reliability (No SiC Gate oxide, No SiC body diode, 5V Threshold voltage)

• Guaranteed 4us Short circuit typ 8us (highest in SiC industry)

• Cost (no SiC FWD necessary, lowest specific Rds,on in industry)

Additional• App Notes, Datasheets and SPICE models available at www.unitedsic.com

• Various Eval Boards already available or available soon (PSFB, PFC, Flyback, LLC, H-Bridge,..)

• Contact: Christopher Rocneanu, Director Sales, +4915121063411, cro@unitedsic.com

Available on:

29

THANK YOU!

QUESTIONS?