sct3040kl: sic power devices -...

SCT3040KL N-channel SiC power MOSFET

1200V

55A

VDSS

ID

PD

RDS(on) (Typ.) 40mW

lOutline

lInner circuit

lPackaging specifications

TO-247N

Tube

-

Type

Packing

Reel size (mm)

C11

SCT3040KL

Basic ordering unit (pcs)

Tape width (mm) -

30

Marking

Taping code

lFeatures

262W

lApplication

1) Low on-resistance

2) Fast switching speed

3) Fast reverse recovery

4) Easy to parallel

5) Simple to drive

6) Pb-free lead plating ; RoHS compliant

Gate - Source voltage (DC) VGSS -4 to +22 V

lAbsolute maximum ratings (Ta = 25°C)

Symbol Value Unit

Drain - Source voltage

Continuous drain currentTc = 25°C

Tc = 100°C

Pulsed drain current

Parameter

ID,pulse *2 137

Junction temperature Tj 175 °C

Range of storage temperature Tstg -55 to +175 °C

A

VDSS 1200 V

ID *1 55 A

ID *1 39 A

• Induction heating

• Motor drives

• Solar inverters

• DC/DC converters

• Switch mode power supplies

Gate-Source Surge Voltage (tsurge < 300nsec) VGSS_surge*3

-4 to +26 V

Recommended Drive Voltage VGS_op*4 0 / +18 V

(1) Gate(2) Drain(3) Source

*1 Body Diode

(1) (2) (3)

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© 2018 ROHM Co., Ltd. All rights reserved.

TSZ22111・14・001 1/12

TSQ50211-SCT3040KL

14.Jun.2018 - Rev.005

Datasheet

SCT3040KL

lThermal resistance

Parameter SymbolValues

UnitMin. Typ. Max.

UnitMin. Typ. Max.

Thermal resistance, junction - case RthJC - 0.44 0.57 °C/W

lElectrical characteristics (Ta = 25°C)

Parameter Symbol ConditionsValues

Drain - Source breakdown

voltageV(BR)DSS VGS = 0V, ID = 1mA 1200 - - V

Zero gate voltage

drain currentIDSS

VDS = 1200V, VGS = 0V

mATj = 25°C - 1 10

Tj = 150°C - 2

Gate - Source leakage current IGSS+ VGS = +22V, VDS = 0V - - 100 nA

-

5.6 V

Gate - Source leakage current IGSS- VGS = -4V, VDS = 0V - - -100 nA

Gate threshold voltage VGS (th) VDS = 10V, ID = 10mA 2.7 -

Static drain - source

on - state resistanceRDS(on)

*5

VGS = 18V, ID = 20A

mWTj = 25°C - 40 52

Tj = 125°C - 60 -

- WGate input resistance RG f = 1MHz, open drain - 7

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TSZ22111・15・001 2/12

TSQ50211-SCT3040KL

14.Jun.2018 - Rev.005

Datasheet

SCT3040KL

lElectrical characteristics (Ta = 25°C)


UnitMin. Typ. Max.

S

Input capacitance Ciss

pFOutput capacitance Coss

Transconductance gfs *5

Reverse transfer capacitance -Crss f = 1MHz - 27

-

VGS = 0V - 1337 -

VDS = 800V - 76 -

VDS = 10V, ID = 20A

pF

Turn - on delay time td(on) *5 VDD = 400V, ID = 18A - 21 -

nsRise time tr

*5

Effective output capacitance,

energy relatedCo(er)

VGS = 0V

VDS = 0V to 600V- 122 -

Fall time tf *5 RG = 0W - 24 -

VGS = 18V/0V -

UnitMin. Typ. Max.

39 -

Turn - off delay time td(off) *5 RL = 22W - 49 -

mJ

Turn - off switching loss Eoff *5 - 118 -

Turn - on switching loss Eon *5 VDD = 600V, ID=20A

VGS = 18V/0V

RG = 0W L=250mH

*Eon includes diode

reverse recovery

- 283 -

Qg *5 VDD = 600V - 107 -

lGate Charge characteristics (Ta = 25°C)


- 8.3

V

- 41 -

Gate plateau voltage V(plateau) VDD = 600V, ID = 20A - 9.6 -

nCGate - Source charge Qgs *5 ID = 20A - 22 -

Gate - Drain charge Qgd *5 VGS = 18V

Total gate charge

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TSZ22111・15・001 3/12

TSQ50211-SCT3040KL

14.Jun.2018 - Rev.005

Datasheet

SCT3040KL

*1 Limited only by maximum temperature allowed.

*2 PW 10ms, Duty cycle 1%

*3 Example of acceptable Vgs waveform

*4 Please be advised not to use SiC-MOSFETs with Vgs below 13V as doing so may cause

thermal runaway.

*5 Pulsed

lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)


UnitMin. Typ. Max.

A

Inverse diode direct current,

pulsedISM

*2 - - 137 A

Inverse diode continuous,

forward currentIS

*1

Tc = 25°C

- - 55

V

Reverse recovery time trr *5

IF = 20A, VR = 600V

di/dt = 1100A/ms

- 25 - ns

Reverse recovery charge Qrr *5

Forward voltage VSD *5 VGS = 0V, IS = 20A - 3.2 -

- 115 - nC

Peak reverse recovery current Irrm *5

- 9 - A

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TSZ22111・15・001 4/12

TSQ50211-SCT3040KL

14.Jun.2018 - Rev.005

Datasheet

SCT3040KL

lElectrical characteristic curves

Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area

Pow

er

Dis

sip

ation

: P

D[W

]

Dra

in C

urr

ent

: I D

[A]

Case Temperature : TC [°C] Drain - Source Voltage : VDS [V]

Fig.3 Typical Transient Thermal Resistance vs. Pulse Width

Tra

nsie

nt

Therm

al R

esis

tance :

Rth

[K/W

]

Pulse Width : PW [s]

0

50

100

150

200

250

300

0 50 100 150 200

0.001

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

Ta = 25ºCSingle Pulse

0.1

1

10

100

1000

0.1 1 10 100 1000 10000

Operation in this area is limited by RDS(on)

PW = 100ms

PW = 1ms

PW = 10ms

PW = 100msTa = 25ºCSingle Pulse

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TSZ22111・15・001 5/12

TSQ50211-SCT3040KL

14.Jun.2018 - Rev.005

Datasheet

SCT3040KL


Fig.4 Typical Output Characteristics(I) Fig.5 Typical Output Characteristics(II)

Fig.6 Tj = 150°C Typical Output

Characteristics(I)Fig.7 Tj = 150°C Typical Output

Characteristics(II)

Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

Dra

in C

urr

ent

: I D

[A]

Dra

in C

urr

ent

: I D

[A]

Dra

in C

urr

ent

: I D

[A]

Drain - Source Voltage : VDS [V]

Dra

in C

urr

ent

: I D

[A]


0

10

20

30

40

50

0 2 4 6 8 10

Ta = 25ºCPulsed

10V

VGS= 8V

12V

16V

20V

18V

14V

0

5

10

15

20

25

0 1 2 3 4 5

Ta = 25ºCPulsed

VGS= 8V

10V

14V

16V

18V

20V

12V

0

10

20

30

40

50

0 2 4 6 8 10

Ta = 150ºCPulsed

10V

VGS= 8V

18V

16V20V14V

12V

0

5

10

15

20

25

0 1 2 3 4 5

Ta = 150ºCPulsed

10V

VGS= 8V

18V

16V

14V

12V

20V

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TSZ22111・15・001 6/12

TSQ50211-SCT3040KL

14.Jun.2018 - Rev.005

Datasheet

SCT3040KL


Fig.9 Typical Transfer Characteristics (II)Fig.8 Typical Transfer Characteristics (I)

Dra

in C

urr

ent

: I D

[A]

Dra

in C

urr

ent

: I D

[A]

Fig.10 Gate Threshold Voltagevs. Junction Temperature

Gate

Thre

shold

Voltage :

VG

S(t

h)[V

]

Junction Temperature : Tj [°C]

Fig.11 Transconductance vs. Drain Current

Tra

nsconducta

nce :

gfs

[S]

Drain Current : ID [A]

Gate - Source Voltage : VGS [V] Gate - Source Voltage : VGS [V]

0.1

1

10

0.1 1 10

VDS = 10VPulsed

Ta = 150ºCTa = 75ºCTa = 25ºC

Ta = -25ºC

0

1

2

3

4

5

6

-50 0 50 100 150 200

VDS = 10VID = 10mA

0.01

0.1

1

10

100

0 2 4 6 8 10 12 14 16 18 20

Ta= 150ºCTa= 75ºCTa= 25ºC

Ta= -25ºC

VDS = 10VPulsed

0

10

20

30

40

50

0 2 4 6 8 10 12 14 16 18 20

Ta= 150ºCTa= 75ºCTa= 25ºC

Ta= -25ºC

VDS = 10VPulsed

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TSZ22111・15・001 7/12

TSQ50211-SCT3040KL

14.Jun.2018 - Rev.005

Datasheet

SCT3040KL


Fig.12 Static Drain - Source On - StateResistance vs. Gate Source Voltage

Sta

tic D

rain

-S

ourc

e O

n-S

tate

Resis

tance

: R

DS

(on)[W

]

Gate - Source Voltage : VGS [V]

Fig.13 Static Drain - Source On - StateResistance vs. Junction Temperature

Sta

tic D

rain

-S

ourc

e O

n-S

tate

Resis

tance

: R

DS

(on)[W

]

Junction Temperature : Tj [ºC]

Fig.14 Static Drain - Source On - StateResistance vs. Drain Current

Sta

tic D

rain

-S

ourc

e O

n-S

tate

Resis

tance

: R

DS

(on)[W

]


0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16

6 8 10 12 14 16 18 20 22

ID = 20A

ID = 37A

Ta = 25ºCPulsed

0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16

-50 0 50 100 150 200

VGS = 18V

Pulsed

ID = 37A

ID = 20A

0.01

0.1

1 10 100

VGS = 18VPulsed

Ta = 150ºCTa = 125ºCTa = 75ºCTa = 25ºC

Ta = -25ºC

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TSZ22111・15・001 8/12

TSQ50211-SCT3040KL

14.Jun.2018 - Rev.005

Datasheet

SCT3040KL


0

10

20

30

40

0 200 400 600 800

Ta = 25ºC

Fig.15 Typical Capacitancevs. Drain - Source Voltage

Capacitance :

C [pF

]


Fig.17 Switching Characteristics

Sw

itchin

g T

ime : t [

ns]


Fig.18 Dynamic Input Characteristics

Total Gate Charge : Qg [nC]

Gate

-S

ourc

e V

oltage :

VG

S[V

]C

oss S

tore

d E

nerg

y : E

OS

S[m

J]

Fig.16 Coss Stored Energy


1

10

100

1000

10000

0.1 1 10 100 1000

Ciss

Coss

Crss

Ta = 25ºCf = 1MHzVGS = 0V

0

5

10

15

20

0 10 20 30 40 50 60 70 80 90 100110

Ta = 25ºCVDD = 600VID = 20APulsed

1

10

100

1000

10000

0.1 1 10 100

tf

td(on)

td(off)

Ta = 25ºCVDD = 400VVGS = 18V

RG = 0WPulsed

tr

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TSZ22111・15・001 9/12

TSQ50211-SCT3040KL

14.Jun.2018 - Rev.005

Datasheet

SCT3040KL


0

200

400

600

800

1000

1200

1400

1600

1800

0 10 20 30 40 50 60

Ta = 25ºCVDD=600VVGS = 18V/0V

RG=0W

L=250mHEon

Eoff

0

50

100

150

200

250

300

350

400

450

500

200 400 600 800 1000

Ta = 25ºCID=20AVGS = 18V/0V

RG=0W

L=250mH Eon

Eoff

0

200

400

600

800

1000

1200

1400

1600

1800

0 5 10 15 20 25 30

Ta = 25ºCVDD=600VID=20AVGS = 18V/0V

L=250mH

Eon

Eoff

Fig.19 Typical Switching Lossvs. Drain - Source Voltage

Sw

itchin

g E

nerg

y : E

[mJ]


Fig.21 Typical Switching Loss

vs. External Gate Resistance

Sw

itchin

g E

nerg

y : E

[mJ]

External Gate Resistance : RG [W]

Sw

itchin

g E

nerg

y : E

[mJ]

Fig.20 Typical Switching Loss

vs. Drain Current


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TSZ22111・15・001 10/12

TSQ50211-SCT3040KL

14.Jun.2018 - Rev.005

Datasheet

SCT3040KL


Fig.22 Inverse Diode Forward Currentvs. Source - Drain Voltage

Invers

e D

iode

Forw

ard

Curr

ent

: I S

[A]

Source - Drain Voltage : VSD [V]

Fig.23 Reverse Recovery Timevs.Inverse Diode Forward Current

Revers

e R

ecovery

Tim

e : t

rr[n

s]

Inverse Diode Forward Current : IS [A]

0.01

0.1

1

10

100

0 1 2 3 4 5 6 7 8

VGS = 0VPulsed

Ta = 150ºCTa = 75ºCTa = 25ºC

Ta = -25ºC

10

100

1000

1 10 100

Ta = 25ºCdi / dt = 1100A / usVR = 600VVGS = 0VPulsed

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TSZ22111・15・001 11/12

TSQ50211-SCT3040KL

14.Jun.2018 - Rev.005

Datasheet

SCT3040KL

lMeasurement circuits

Fig.1-1 Switching Time Measurement Circuit Fig.1-2　Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

Fig.3-1 Switching Energy Measurement Circuit Fig.3-2 Switching Waveforms

Fig.4-1 Reverse Recovery Time Measurement Circuit Fig.4-2 Reverse Recovery Waveform

D.U.T.

VsurgeIrr

Eon = ID×VDS Eoff = ID×VDS

ID

VDS

Same type device as

D.U.T.

D.U.T.

ID

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TSZ22111・15・001 12/12

TSQ50211-SCT3040KL

14.Jun.2018 - Rev.005

Datasheet

R1102Swww.rohm.com© 2015 ROHM Co., Ltd. All rights reserved.

Notice

ROHM Customer Support System http://www.rohm.com/contact/

Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us.

N o t e s

The information contained herein is subject to change without notice.

Before you use our Products, please contact our sales representative and verify the latest specifica-tions :

Although ROHM is continuously working to improve product reliability and quality, semicon-ductors can break down and malfunction due to various factors.Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM.

Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.

The Products specified in this document are not designed to be radiation tolerant.

For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, and power transmission systems.

Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters.

ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein.

ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information.

Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.

When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act.

This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM.

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sct3040kl: sic power devices -...

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