flcc seminar 1/29/07 arn 1 flcc kickoff seminar january 29,...
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FLCC Seminar 1/29/07 ARN1
Copyright 2007, Regents of University of California
FLCC Kickoff SeminarJanuary 29, 2007Andy Neureuther
Tribute to Richard NewtonSeminar/Workshop Schedule for SpringYear 4 Proposal Status: Approval, ODP Opportunity, Last Call on Masks and Si WafersBusiness Climate Changes
Can We Deliver Benefits?Optical Digital Profilometry and OpportunitiesTrends in DFM and Simulation
FLCC Seminar 1/29/07 ARN2
Copyright 2007, Regents of University of California
Tribute to Richard Newton
Generated the Philosophy on which FLCC Operates
Research Leader: SPICE, CAD, GSRCAcademic Leader: EECS Chair, College DeanVisionary Collaborator: Internal and External
CITRIS BuildingCommonwealth Club Speech Sep. 9, 2006 http://flcc.berkeley.edu/newton_CommClub_9-21-06.pdf
FLCC Seminar 1/29/07 ARN3
Copyright 2007, Regents of University of California
The Industry Team
17 Supporters2 Contributors3 Former
SVTC
FLCC Seminar 1/29/07 ARN4
Copyright 2007, Regents of University of California
The Faculty Team
Jane Chang ChE UCLA Plasma mechanisms and feature modelingCheung, Nathan EECS UCB Plasma modeling, diagnostics, surface interactionsDornfeld, David ME UCB Chemical-Mechanical PlanarizationDoyle, Fiona MatSci UCB Chemical-Mechanical PlanarizationKomvopoulos, K. MatSci UCB Chemical-Mechanical PolishingGraves, David ChE UCB Plasma modeling, diagnostics, surface interactionsHaller, Eugene MatSci UCB Dopant and Self-Diffusion in Si and SiGe AlloysKing, Tsu-Jae EECS UCB Novel Electron DevicesLieberman, Michael EECS UCB RF sources and E&M plasma modelingNeureuther, Andrew EECS UCB Pattern Transfer Modeling/SimulationPoolla, Kameshwar ME UCB AEC/APC and MetrologySpanos, Costas EECS UCB IC Process Metrology, Diagnosis and ControlTalbot, Jan CE UCSD Chemical-Mechanical Planarization
FLCC Seminar 1/29/07 ARN5
Copyright 2007, Regents of University of California
The Student TeamCAMPUS STUDENT AREA ADVISOR
Berkeley Jeffrey Hartnett CMP Dornfeld
Berkeley Shantanu Tripathi CMP Doyle
Berkeley Huaming Xu CMP Komvopoulos
Berkeley Chaohao Wang (UG) Sensors & Control Spanos
Berkeley Vorrada Loryuenyong Process Integration Cheung
Berkeley Marshal Miller Lithography Neureuther
Berkeley Jing Xue Sensors & Control Spanos
Berkeley Emi Kawamura (Post Doc) Plasma Technology Lieberman
Berkeley Qun Kian Sensors & Control Spanos/Poolla
Berkeley John Gerling Process Integration Cheung
Berkeley Christopher Liao Process Integration Haller
Berkeley Xin Sun Process Integration King
Berkeley Juliet Holwill Lithography Neureuther
Berkeley Eric Chin / Lynn Wang Lithography Neureuther
Berkeley Kedar Patel Sensors & Control Spanos
San Diego Robin Ihnfeldt CMP Talbot
Los Angeles John Hoang Plasma Technology Chang
Berkeley Alan Wu Plasma Technology Lieberman
Berkeley (Mark Nierode) Plasma Technology Graves
Berkeley Insook Lee (Post Doc) Plasma Technology Graves
Jason Cain PhD, Tanuja Gopal PhD, Edward Hwang PhD, Mark Nierode M.S., Garth Robins, PhD, Hugh Silvestri PhD and 2 UG Joe Chien and Hideaki Oshima
FLCC Seminar 1/29/07 ARN6
Copyright 2007, Regents of University of California
The Staff TeamPrincipal InvestigatorAndrew Neureuther510 Cory Hall, ERLphone: (510) 642-4590fax: (510) [email protected]
System SupportChangrui Yin550 Cory Hall,phone: (510) 643-7542fax: (510) [email protected]
Contract ManagementFarah Pranawahadi545D Cory Hall, ERLphone: (510) 643-9705fax: (510) [email protected]
Administrative SupportCharlotte Jones558 Cory Hall, ERLphone: (510) 642-1818fax: (510) [email protected]
Teleconference1-888-446-3559code: 510-643-2834
http://flcc.berkeley.eduAccess restricted by password
FLCC Seminar 1/29/07 ARN7
Copyright 2007, Regents of University of California
FLCC Operational Plan Sp 06Date Time Activity Speaker
Jan 23 M, 2-3PM Kick-Off Neureuther
Feb 12 M, 2-3 PM Seminar
Feb 26 M, 2-3 PM Seminar
Mar 12 M, 2-3 PM Seminar
Mar 20 M, 2-3 PM Seminar
Apr 4(Alt. 11 MRS)
W, 1-6 PMSite TBA SV
Workshop All
Apr 16 Seminar
Apr 30 Seminar
FLCC Seminar 1/29/07 ARN8
Copyright 2007, Regents of University of California
Reading of Key Papers: M 2PM Wang Room Start 2/5
General LithographyVan den Brink, ASML BACUS 06
Double Patterning:Arnold/Dusa IEEE; Other
Mask Edge EffectsProgler SPIE06; att-PSM Yoshizawa Photomask Japan best paper; ALT-PSM Gleason BACUS 06;
Focus EffectsBrunner SPIE 06;
Illumination EffectsDusa SPIE 06
Litho: AndyDevice: Tsu-Jae KingCMP: Dave DornfeldEtching: Jane Chang
FLCC Seminar 1/29/07 ARN9
Copyright 2007, Regents of University of California
FLCC Year 4 Proposal Starts Feb 1
Approved and Funded as Written; goes to Jan 31, 2008Required to file alternative research plan just in case part of the photomask donations do not materializeSince approved Cypress semiconductor has had to drop out as the process development group for 65 nm was dissolved.Thanks to Bert Bruggeman of the Silicon Valley Technology Center and Mircea Dusa of ASML we will be able to conduct silicon wafer processing experimentsThe Silicon Valley Technology Center will also participate as a regular FLCC Participating Company.
FLCC Seminar 1/29/07 ARN10
Copyright 2007, Regents of University of California
Special Opportunity: Optical Digital Profilometry
TEL/Timbre plans to donate ODP System to UC BerkeleyODP TeraGen 2048 system including
TeraGen Server Farm (8 servers) Aether Station for ODP modeling
This library generation and searching capability will be fed data from our Sopra Ellipsometer
The data taking will be slow but the science will be greatKey is flexibility: transmission, goniometer for diffracted orders
ODP System to be used for:Development of advanced applications of scatterometryGeneral CD and profilometry measurements to support UC Berkeley research
Intellectual Property Considerations on Tool modification and software off-limits
FLCC Seminar 1/29/07 ARN11
Copyright 2007, Regents of University of California
Last Call on Silicon and Photomasksfor FLCC 4 Year Vision
Final Year Multi-Student Contributions of test structure for supporting Berkeley lab experiments, testing on production processing equipment, and wafer processDevice variabilityOptical Digital ProfilometryPSM as Precision InstrumentsPattern MatchingCMP ModelingEtch ModelingStressOther collaboratorsOther low hanging fruit for FLCC
SCHEDULEFeb 2 email requestFeb 9 plan draft & dialogFeb 16 finalize requests to SVTC, Toppan and Photronics
FLCC Seminar 1/29/07 ARN12
Copyright 2007, Regents of University of California
FLCC Adapt to Business Conditions“Companies won’t be the big paternal parent
anymore”
“The new model is to stay lean and contract out for everything, find specialists who are really good at one thing and pay them a lot of money to do it. It’s happening throughout Silicon Valley”
Russell Hancock, of Joint Venture: Silicon Valley Network in discussing their 2007 Silicon Valley Index. SF Chronicle 1/28
FLCC Seminar 1/29/07 ARN13
Copyright 2007, Regents of University of California
FLCC Adapt to Business Conditions (Cont.)
Industry is extremely focused on the job that they have to do and to be successful in University Research we have to deliver mutual benefits to their job related current needs. Rapid Changes: Even at the Corporate Level
AMD => Spun off SpansionKLA-Tencor bought BrionTI announces going fabless < 45 nmCypress likely go fabless for 65 nm => Created Silicon Valley Technology Center as an independent company
FLCC ChangesFaculty/Students collaborations adapt to be relevant to these changesKeep sanity by investing long term in relationships with technologists and identify overarching industry needs
FLCC Seminar 1/29/07 ARN14
Copyright 2007, Regents of University of California
IP Gordian KnotIntellectual Property is a major concern for teaming in research
with industry.FLCC Companies like working on pre-competitive ideas on an industry wide basis.Students are encouraged to invent and broaden their experience by make Invention Disclosures, working with Lawyers on filing patents.We had success,
received a patent, university gave an option on an exclusive license to a 3rd party, 3rd party does not do business with our collaborator, and ccollaborator believes that they have subsidized their competitor!
SolutionsLook at IP way up-frontParticipating Companies participate in cost of patent applicationInclude patent application costs in budget and give non-exclusive license
FLCC Seminar 1/29/07 ARN15
Copyright 2007, Regents of University of California
Concept of ODP1) ODP employs spectroscopic ellipsometry to measure intensity and phase of the 0th order diffraction at a fixed incident angle in wavelength from deep UV to infrared
Fig2. Specular spectroscopic scatterometryfor 1D grating [2];
Fig 3. a simple grating structure forevaluating scatterometry [2]
The ratio of the 0th-order complex TE and TM reflectivity is measured;The real part of the phase difference is used for the analysis
FLCC Seminar 1/29/07 ARN16
Copyright 2007, Regents of University of California
Concept of ODP (cont.)2) A Rigorous Coupled-Wave Analysis (RCWA) grating simulator
(gtk) implemented- Periodic structures
3) A library of spectral responses created- The profiles obtained by a random profile generator, e.g. Monte Carlo method- Profile information: rounding, footing, T-topping, material thickness
variation, wide range of sidewall angles, as well as CD4) Generated profiles used as inputs to the RCWA simulator to
generate the simulated diffraction responses [3]. The diffraction results in the form of are calculated over a range of wavelengths
5) The diffraction responses measured from in situ/in-line specularspectroscopic scatterometry are measured and compared with those in the library
FLCC Seminar 1/29/07 ARN17
Copyright 2007, Regents of University of California
Concept of ODP (cont.)
Fig 4. A library-based methodology for CD profile extraction [2]
FLCC Seminar 1/29/07 ARN18
Copyright 2007, Regents of University of California
Applications of ODP (cont.)• Example II: shallow trench isolation structure
ODP measured shallow trench isolation structure profile afteretch and clean as compared to cross-sectional SEM of the samegrating structure [1]
FLCC Seminar 1/29/07 ARN19
Copyright 2007, Regents of University of California
Advantages of ODPI. ODP extendable beyond 70nm nodes by using conventional
spectroscopic ellipsometry (no additional hardware needed)- CD-SEM become bottleneck in CD measurement under 100nm
Fig 1. Grating measurement using spectroscopicellipsometer. A unique set of tanψ and cos∆spectra corresponds to a specific geometry(CD, pitch, profile, film thickness) combination of device structure
II.ODP generate digital cross-sectional information in real time; It provides non-destructive metrology for device profiles- CD-SEM cannot extract thickness and topographic information- SEM, AFM destructive, very expensive; AFM very slow
FLCC Seminar 1/29/07 ARN20
Copyright 2007, Regents of University of California
EM Topography Effects
Build on work of Kostas Adam on photomasksand Dan Ceperely on pupil plane masks Marshal Miller
ALT-PSM and ATT-PSM Edge Effects and Cross-TalkUse TEMPEST time-evolution to visualize edge effects and cross-talk as they occur among masks openingsIntroduced reduced parameter edge and line source modelsUse Optical Digital Profilometry directly on masks to validate models and explore masks edge effect qualification
FLCC Seminar 1/29/07 ARN21
Copyright 2007, Regents of University of California
Edge Effect Analysis MethodologyDeveloped by Dan Ceperley for JPL-TPF
• Investigated 50um thick Si masks at 630nm and 785nm.
– With and without 200nm Cr film.– 96um period.– TE and TM polarizations.– Refractive index of Silicon:
• n = 3.88 + j0.2160 at 630nm wavelength.• n = 3.6932 + j0.06 at 785nm wavelength.
– Refractive Index of Chrome:• n = 3.562 + j4.356 at 630nm wavelength.• n = 4.118 + j4.362 at 785nm wavelength.
Si Si
Ligh
t
Si Si
Ligh
t
CrFilm
200nm
Spike Locations
20°96um
50um
• Same cell spacing used for all simulations (dx = 11.9nm).• Small simulation errors: vertical sidewall masks at
630nm had incorrect Cr films. – The Cr refractive index from 785nm was used. – Small errors – results shown with incorrect Cr.– Correct simulations in progress.
FLCC Seminar 1/29/07 ARN22
Copyright 2007, Regents of University of California
Edge-Spikes Represent Difference from Ideal
• Intensity plots for 630nm wavelength case shown on the right.
• Undercutting by 20° reduces spike intensity by 5x.
• Film has little effect in these simulations.– Film is very important for leakage straight
through the Si.– This leakage is not caught by the simulations
(below the noise floor).
TE
TM
VerticalSidewalls
20°UndercutSidewalls
FLCC Seminar 1/29/07 ARN23
Copyright 2007, Regents of University of California
0.099 λ, -160.4°0.078 λ, -154.9°2.46 λ, -51.5°2.46 λ, -51.4°TM0.20 λ, 9.1°0.175 λ, 7.7°2.71 λ, -45.5°2.72 λ, -45.5°TE
FilmNo FilmFilmNo FilmSidewalls20 degreeSidewallsVertical630nm
0.099 λ, -160.4°0.078 λ, -154.9°2.46 λ, -51.5°2.46 λ, -51.4°TM0.20 λ, 9.1°0.175 λ, 7.7°2.71 λ, -45.5°2.72 λ, -45.5°TE
FilmNo FilmFilmNo FilmSidewalls20 degreeSidewallsVertical630nm
0.031 λ, 3.1°0.023 λ, 34.3°2.18 λ, 114.4°2.18 λ, 114.5°TM0.26 λ, 170.5°0.23 λ, 169.1°2.55 λ, 121.9°2.55 λ, 121.8°TE
FilmNo FilmFilmNo FilmSidewalls20 degreeSidewallsVertical785nm
0.031 λ, 3.1°0.023 λ, 34.3°2.18 λ, 114.4°2.18 λ, 114.5°TM0.26 λ, 170.5°0.23 λ, 169.1°2.55 λ, 121.9°2.55 λ, 121.8°TE
FilmNo FilmFilmNo FilmSidewalls20 degreeSidewallsVertical785nm
Single Box-Car Approx.
Boxcars for a single spike
• Strenth of effects (strongest to weakest):1. Undercut angle.2. Polarization.3. Wavelength.4. Film.
• Put a 20 wavelength window around each spike.• Approximated area under spike as boxcar with
height = 1.
FLCC Seminar 1/29/07 ARN24
Copyright 2007, Regents of University of California
Experimental Validation of Vector SimUse bar gratings with sequence of duty cylcles near 50%Opening => Sin(x)/x; Boxcars => Cos(x)Plot sqrt(2nd Order) versus duty cycleShift in minimum gives 2/P(Real part boxcar)Min dip gives 2/P(Imy part boxcar)
50% RealImy
Sqrt(I2)
0.01
50% RealImy
Sqrt(I2)
0.01
Duty Cycle
FLCC Seminar 1/29/07 ARN25
Copyright 2007, Regents of University of California
Novel Guided-Wave MonitorsHigh Q guided wave resonator structure
Changes in duty cycle affect couplingVariations in CD affect QLER produces out of plane scatter
Guided-wave Monitors for CD’s and LERIdentify high Q optical guiding structures as test vehiclesEvaluate sensitivity of angle and bandwidth (Q) of optical coupling into guides to duty cycle, duty cycle spread, and LER
FLCC Seminar 1/29/07 ARN26
Copyright 2007, Regents of University of California
Novel Experiments: Optical Digital Profilometry
Highly sensitive focus targets based on inserting +90 and -90 slivers in periodic arraysMonitoring all aberrationsDirect monitoring of photomask edge effectsPotential for verifying and calibrating models for out of phase photomask edge contributions for both Alternating and Attenuating Phase-Shifting MasksNovel Guided-Wave Monitors
FLCC Seminar 1/29/07 ARN27
Copyright 2007, Regents of University of California
Human/Computer Division of Labor
Late 1960’sCDC 6400, 1 MHz, $500/hr Technologist $30/hr vs 15K FLOPS x 1hr
Early 2000’sPC, 2 GHz, $0.10/hrTechnologist $50/hr vs 1T FLOPS x 1hr
StrategyNeed Technologists understanding and creativityNeed Computers to integrate complexityBalance nature of needs and costs
FLCC Seminar 1/29/07 ARN28
Copyright 2007, Regents of University of California
Simulation is Moving to 6th and 7th Gear
EducationDiagnostics (focus vs. Dose)Process set-pointEquipment Planning (what if)Photomask pre-compensation (Diffraction Limited)Foundation for DFM (Litho, CMP, Etch, Stress)Equipment recognize and tune to goal of design
FLCC Seminar 1/29/07 ARN29
Copyright 2007, Regents of University of California
Physical Models for DFM DFM Goal:
Make chips more manufacturable by linking physical understanding during design.
DFM Importance: At 45 nm a 25% parametric yield loss is anticipated.Every Fab needs high quality DFM models for Designers
DFM Physics:80-90% of the value of physical characterization and modeling is in the first 10-20% of physical understanding.
DFM Efficiency:Knowledge of the dominant phenomena adds critical efficiency in system integration.
FLCC Seminar 1/29/07 ARN30
Copyright 2007, Regents of University of California
Matching Physical Models to DFM Needs Requirements by Nickhil Jakatdar
Design evolves during designLarge volume of first-cut estimates Careful systematic assessment of the last possible gotcha
Early design stage physical requirementsSupport 100,000 queries per secondEasy and simple to calibrate to the fabGive up 5 to 10% accuracy
FLCC Seminar 1/29/07 ARN31
Copyright 2007, Regents of University of California
Modeling and Simulation Evolution Early 1980’s
“Those that can do. Those who cannot, simulate,” Gino Addiego, UCB“Yesterday’s technology Simulated Tomorrow” sign by Mark Law, Stanford“Has Simulation ever found anything first?” Hank Smith, MIT
Early 1990’sAlfred Wong discovers phase-shifting mask imbalanceBell Labs simulate every device experiment first
Early 2000’sSimulate printing of every feature in final layoutInteroperability of simulation with design