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1. Thin Films for Application
2. Film Thickness Measurement Requirements
3. Film Thickness Measurement Methods
4. Comparison with Other Methods
5.5. Repeatability of SiO2 on Repeatability of SiO2 on SiSi waferwafer
6. Spectroscopic Reflectometer Principle
7. ST Series Applications
10. Other KMAC products
• Display Technology - CRT, LCD, TFT-LCD, LED, PDP, ELD, OELD, FED ….
Optical Coating Technology - Filter, Anti-Refraction Coating, Hard Coating, ….
• Other Technologies - Plating, Battery, Printing….
• Thin Film Process
- Thermal Oxidation (Dry, Wet): SiO2, ONO
- LPCVD: SiO2, Si3N4, NO, Poly-Si, TEOS, BPSG, a-Si, W, WSi, Ti, TiN
- PECVD: SiOx, SiNx, a-Si
- VPE, MOCVD, LPE, MBE: Si, GaAs, AlGaAs, InGaAs, SiGe, GaN
- PVD(Sputtering, Evaporation): Al, Cu, Si, SiOx, WSi, Au, Ti
- Spin Coating: Photoresist, p-imide, SOG, Low-D.
- Others: Plating, Painting, Dip coating
1 Thin Films for Application
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2 Film Thickness Measurement Requirements
• Semiconductor Technology - SiO2, Si3N4, poly-Si, and photo resist with wide spec. limit. - Ellipsometer, Spectrophotometer with simple algorithm
• Current and Future Stage of Thin Film Technology - Various materials: Doped p-Si, a-Si, TiN, compound semiconductors - Very thin and/or very thick film: ~10A SiO2, ~100μm P.R. for bumping - In-situ measurement: direct measurement on patterned wafer - Necessary to control n, k, and reflectivity - Metal films with no contact, no damage, no particle generation
• Ability to measure very thin films or very thick films with high accuracy
• Simultaneous measurement of some optical constant (n, k and reflectivity)
• Ability to measure on front side of sample (reflection mode)
• Small beam spot size
• Fast and reliable result
• Easy to operation and easy to maintenance
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• Microscopy
- Destructive, special sample preparation, micro structure
- Any kinds of films, multi structure
• Surface Profiler
- Contact, Destructive, Sample preparation
- Any kinds of films
- Non contact, Non destructive
- Interference of lights reflected from surface and film interfaces
- Non contact, Non destructive, Able to focus on small spot
- Dielectrics, Transparent films
- Non contact, Non destructive
- RS(Sheet Resistance) Measurement: Metal films
- C-V Plotter: Dielectric films
3 Film Thickness Measurement Methods
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DifficultDifficultEasyEasy (In-situ)Sample Preparation
Thin()
Thick(μm)
No
Low
Possible
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TH K n TH K n TH K n ΔTH K Δn
1473 2.017 1473 2.012 0 0.005
1473 2.019 1482 2.012 9 0.007
1479 2.017 1482 2.013 3 0.004
2966 2.015 2992 2.019 26 0.004
2972 2.015 2941 2.034 31 0.019
2982 2.016 2974 2.034 8 0.018
4413 2.114 4408 2.128 5 0.014
4410 2.116 4376 2.133 34 0.017
4420 2.117 4407 2.128 13 0.011
(unit: )
D ifference
1473 2.0181400
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Item Ellipsom etry Reflectom etry Com m ents input Δ, Ψ R(% ) Polarization & Reflection
output n,k,T n,k,T sam e
Reference - Si w afer incident light
Theory Electrom agnetic w ave
O ptical D ata A nalysis Regression analysis m ethods
ξ)vt)(z λ π2sin(Et)E(z, 0 +−−=
1. SE(Spectroscopic Ellipsometry) & SR(Spectroscopic Reflectometry) RI Δn < 0.05 .
2. SE delta(Δ) psi(Ψ) n&k, THK SR .
3. SR ( ) n&k, THK .
4. SR SE .
4 Comparison with Other Methods
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5 Repeatability of SiO2 on Repeatability of SiO2 on SiSi waferwafer
Repeatability of 30 times 250A 1000A 2000A 5000A
Range (Max-Min) 2.0 1.9 0.9 1.6
Repeatability
0
1000
2000
3000
4000
5000
Th ic
kn es
s (
Visible light => Thin Layers => Reflection from Surface & interfaces => Fiber Probe => Spectrophotometer => Wavelength Decomposition => CCD => A/D Conversion => PC => Software
• Thickness by Spectrum Fitting
Measured Spectrum shows sine shapes or valleys in Wavelength Domain depending on Film Thickenss and N & K
Optimize Film Thickness and N & K by fitting Computed Spectrum to Measured one as varying Film Characteristics
Transparent Layer (Multi-Layer)
Reflected Light 2
7 ST Series Applications
1. Semiconductor 2. LCD 3. PDP 4. Optical Coating 5. OSP 6. Thin Metal Film 7. Color Measurement 8. 3D surface profiller 9. CD(Critical Dimension) Measurement 10. Material Science
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Unit[Å]
-Etching ITO
Sample ID Substrate Layer
#1(30s) Glass ITO
#2(40s) Glass ITO
#3(50s) Glass ITO
#4(60s) Glass ITO
#5(70s) Glass ITO
#6(80s) Glass ITO
#7(90s) Glass ITO
MgO (: um)
1) SEM Image
SEM OSP : 1560Å, 1870 Å, 1950 Å, 2000 Å, 2180 Å,
2470 Å, 2690 Å, 3080 Å, 3300 Å, 4780 Å
KMAC ST4080-OSP : OSP : 1030Å ~ 4948Å Mean = 2174Å , Stdev = 822Å
7 ST Series Applications
6745 6051 5357 4663 3969 3275 2581 1887 1193 499
6745 6051 5357 4663 3969 3275 2581 1887 1193 499
7 ST Series Applications
7 ST Series Applications

#1 15144 OC
#2 12404 OC
#3 O.C&CS
#4 15638 OC
#5 12397 OC
#6 O.C&CS
:
37771
37607
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R&D
Thin Film Measurement System
2D,3D Mapping data Display
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UV-Vis
Spectrometer