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© Copyright 2013 ISSCC—Do Not Reproduce Without Permission - 107 -

Optical Interconnect: As the bandwidth demand for traditionally electrical wireline interconnects has accelerated, optics has become an increasingly attractive alternative for interconnects within computing systems. Optical communication offers clear benefits for high-speed and long-distance interconnects. Relative to electrical interconnects, optics provides lower channel loss. Circuit design and packaging techniques that have traditionally been used for electrical wireline are being adapted to enable integrated optical with extremely low power. This trend has resulted in rapid progress in optical ICs for Ethernet, backplane and chip-to-chip optical communication. ISSCC 2014 includes a 2-dimensional (12×5) optical array achieving an aggregate data-rate of 600Gb/s [8.2]. Pre-emphasis using group-delay filtering extends the useful date rate of a 25Gb/s VCSEL to 40Gb/s [8.9]. Additional examples of low-power-linear and non-linear equalizers tackle electronic dispersion compensation in multi-mode and long-haul cables [8.1, 8.3]. Concluding Remarks: Continuing to aggressively scale I/O bandwidth is both essential for the industry and extremely challenging. Innovations that provide higher performance and lower power will continue to be made in order to sustain this trend. Advances in circuit architecture, interconnect topologies, and transistor scaling are together changing how I/O will be done over the next decade. The most exciting and most promising of these emerging technologies for wireline I/O will be highlighted at ISSCC 2014.

Per-pin data-rate vs. year for a variety of common I/O standards.

2000 2002 2004 2006 2008 2010 2012 2014 20161

10

50

Year

Data Rate [Gbp

s]

HyperTranportQPIPCIeS‐ATASASOIF/CEIPONFibre ChannelDDRGDDR

© Copyright 2013 ISSCC—Do Not Reproduce Without Permission - 119 -

DRAM Data bandwidth trends.

Non-Volatile Memories (NVMs): In the past decade, significant investment has been put into emerging memories to find an alternative to floating-gate based non-volatile memory. The emerging NVMs, such as phase-change memory (PRAM), ferroelectric RAM (FeRAM), magnetic spin-torque-transfer (STT-MRAM), and Resistive memory (ReRAM), are showing potential to achieve high cycling capability and lower power per bit in read/write operations. Some commercial applications, such as cellular phones, have recently started to use PRAM, demonstrating that reliability and cost competitiveness in emerging memories is becoming a reality. Fast write speed and low read-access time are the potential benefits of these emerging memories. At ISSCC 2014, a high-density ReRAM with a buried WL access device is introduced to improve the write performance and area. The next Figure highlights how MLC NAND Flash write throughput continues to improve. However, while the Figure following shows no increase in NAND Flash density over the past year, recent devices are built with finer dimensions or more sophisticated 3-dimensional vertical bit cells.

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