euvl masks : progresses and issueseuvlsymposium.lbl.gov/pdf/2009/pres/o_m1-01_hayashi_dnp.pdf ·...

Dai Nippon Printing Co., Ltd.Dai Nippon Printing Co., Ltd.Electronic Device OperationElectronic Device Operation

1

EUVL Masks : Progresses and Issues

Naoya Hayashi

219 October 2009 2009 EUVL Symposium2009 EUVL Symposium

Contents• Background

– Mask Market Positions– Next Generation Lithography Candidates

• Today’s Performance of EUV Mask– Substrate Format & Mask Performances

• Challenges & Gaps– Technology Challenge– Business Challenge

• Summary


Mask Market Position


NGL vs. ApplicationNow；ArF Immersionλ：193nm, Refractive Optics, 1/4

EUVLλ：13.5 nm, Reflective Optics in vacuum, 1/4

MaskMask

WaferWafer

SourceSource

HVM for HVM for MPUMPU, Memories, Memories

Mask Less Lithography（ML2）

Cell, Multi-Column, Multi-Beam

Develop, Small Volume for Develop, Small Volume for SoCSoC

Mask-1Design Mask-2

Double Patterning（DPL）Multiple Exposures, Multiple Processes

PixelatedPixelated

SourceSource

MaskMask WaferWafer

SoCSoC 3232⇒⇒22nm, Extension of 22nm, Extension of Single exposure methodSingle exposure method

SpacerSpacer--DPLDPL for for FlashFlash(3Xnm)(3Xnm)Pitch split for Pitch split for SoCSoC??

Source Mask Optimization (SMO）

Nanoimprint Lithography (NIL)Direct Pattern Transfer, 1/1

Template

HVM for MemoriesHVM for Memories






• Summary


EUV Mask Blank Structures

LR-TaBN

CrN

Si

-

Ru

Mo/Si

LTEM

Material/Layer

absorber layer

capping layer

buffer layer

reflective layer

substrate

CrNback side film

>85 layers stuck of 8 different materials with 32nm >85 layers stuck of 8 different materials with 32nm defect free and 36nm flatness over 142mmdefect free and 36nm flatness over 142mm□□ @hp32nm@hp32nm


EUV Mask Pattern Images90nm90nm100nm100nm 80nm80nm 70nm70nm 60nm60nm 50nm50nm 40nm40nm

IsolateSpace

Line & Space

Densehole

Not resolved

Well fabricated Pattern Down to 60nm ITRS requirement @ 2013 = 78 nm


Cross Section Images of EUV Mask Patterns Line & space Isolate space Hole

200nm

150nm

100nm

90nm

80nm

70nm

60nm

60nm hp pattern was well fabricated keeping good cross-section profile


CD uniformity of absorber layer patternCD uniformity of absorber layer pattern

Target pattern size 180nm: pattern area size 132x132mm

Isolate space LS-Space

-5nm

-4nm

-3nm

-2nm

-1nm

+1nm

+2nm

+3nm

+4nm

+5nm

Range 6.1nm3sigma 3.6nm

Range 5.5nm3sigma 3.5nm

CD uniformity of Isolate space 3.6nm(3s) and Dense space 3.5nm(3s) are achieved

ITRS requirement @ 2013(Iso Line) = 3.0 nm


EUV mask status for full field exposure tool~IP error measurement~

※ All point alignment・ 132mm□ 13 x 13 11000 Pitch

EUV mask Binary mask

ITRS requirement @ 2013 = 3.8 nm






• Summary


EUV OPC requirements

Aoyama-san, Selete, EUV Symposium 2008.

OPC is needed to compensate for multiple EUV effects:Flare, optical diffraction, 3D mask, shadowing, resist effects.

Due to loss of hierarchy from flare and shadowing, full 26x33mm reticle OPC needed in reasonable time (< 1 day)

Requirements and results of a full-field EUV OPC flow,S. Jang. Proc. of SPIE Vol. 7271-46, 2009. Presented by Synopsys at SPIE 2009


Potential for SRAM pattern replication~Recent Selete work without OPC

20 nm node:0.0855μm2

hp 36 nm

Si sub.SOCSiO2BARCresist


hp 32 nm


hp 28 nm

Details → “Applicability of Device Fabrication for 35 nm HP Wiring with

Extreme Ultra Violet Lithography”, H. Aoyama, et.al. Selete


Detected defects vs. Printed defects

On mask

On wafer

Some defects are not detected on mask but printed on wafer. Need actinic defect inspection ?!


Optical Inspection Update & EB option

• Inspection sensitivity for 32nmHP, and 27nmHP using C & P polarized illumination with 199nm tool was reported at BACUS 2009 by Selete.

• The results confirmed the appropriate sensitivity for 32nmHp with P-polarized illumination and 19% reflective AR layer. (See next foil)

• Additional 22nmHP results with lower reflectivity AR layer will be reported by Selete at the Poster Session, “EUV mask pattern defect inspection using 199-nm inspection optics” by T. Amano.

• E-Beam inspection tool may be an option with higher resolution and conductive substrate, even very low throughput.


Defect inspection sensitivity evaluation~ Preliminary results by Selete (AR=19%)

* 75 70 65 60 55 50 45 40 35 30 25 20 15 10 5C-pol. 28P-pol.C-pol. 46P-pol.

C-pol. 45P-pol. 33C-pol. 42P-pol. 50

C-pol.P-pol. 31C-pol. 47P-pol. 68

hp108nm

hp180nm

hp128nm

OpaqueExtension

ClearExtension

OpaqueExtension

ClearExtension

OpaqueExtension

ClearExtension

Defect Size (nm)Base Pattern Defect Type Illumination

10% CD error at Aerial image (by simulation) Using both C- and P-polarized illumination, a sufficient defect-detection

sensitivity is achieved for opaque and clear extension defects in hp180nm and hp128nm.

In hp108nm, P-polarized illumination has higher defect detectavility for opaque extension and C-polarized illumination has higher defect detectavility for clear extension. BACUS 2009 (Sep.17th, 2009)


EB reticle inspection tool evaluation

HMI’s eXploreTM 5200:The 1st Mask EB Inspection (EBI) system

Inspection resolution :

10nm of leap and scan mode

20nm of continuous scan mode

CS for EUV mask and higher throughput time

Throughput : ~50cm2/hour @ 100nm pixel

Inspection conditions:Pixel size: 20 nm

Landing energy: 2800 V

Inspection mode: Die to Die


Minimum captured PDs on 88nmHP L&S: SEM images and inspection images

1x2 opaque extensionDefect size: 24nm

1x1 clear extensionDefect size: 26nm

1x1 opaque extensionDefect size: 32nm

1x2 clear extensionDefect size: 33nm

SEM

Images

Inspection

Images

• EBI is capable of detecting 25 nm defects on 88 nm L/S pattern with sufficient image contrast ITRS requirement @ 2013 = 25 nm


Minimum captured PDs on 128nmHP Holes: SEM images and inspection images

Pin holeDefect size: 55nm

Corner protrusionDefect size: 37nm

Corner intrusionDefect size: 32

SEM

Images

Inspection

Images

• Details at Poster Session：“EUV mask pattern defect inspection for 32/22nm node”


EUV mask activity update & Challenges• DNP is continuing EUV mask sample fabrication for

consortiums, but still very small number of shipped masks.

• EUV specific technology challenges– Need different architecture for “OPC”– Absorber defect inspection

• Optical tool showed possibly 30-40nm sensitivity• EB tool showed possible ~25nm sensitivity. But very slow.

– EUV AIMS• Need at high volume production.

– Blank defect inspection• Actinic inspection tool may be needed for blank quality assurance. • Need at pilot line production.

We are planning to put EUV mask into production from 2012/13 timeframe.

Up to date shipped

Masks for Micro Exposure Tool ~30

Full field mask ~30


EUV mask business challenges• EUV mask seems to require several EUV dedicated (and

possibly expensive, because of small tool market size) tools to make the mask, e.g. actinic blank inspection tool, actinic reviewer (EUV-AIMS), and actinic patterned mask inspection tool.

• On the other hand, there will be limited market size for EUVL mask at pilot line phase at 2011-2012.

• Even at HVM phase at 2013-2014, there will be several hundreds ~ few thousands of EUV mask demand per year (not per month) world-wide, and first EUVL user group has captive mask shop.

• It is very difficult to invest on the development and installation of those tools for both tool suppliers and merchant mask shops, especially at pilot line phase.

• So, we may need the development NRE support through consortia pilot line, and certain merchant maskshop’s business model for HVM.


Summary

• We believe that we can put EUV mask into production from 2012/13 timeframe.

• However, mask defect inspection infrastructures and actual specifications based on the wafer printing evaluation have still a gap to meet the requirements with reasonable cost.

• We need further collaboration work through consortia and potential customers to realize the EUVL in required timeframe.

• We also need merchant mask shop business model, e.g. through partnerships, to fill the gap and realize whole infrastructures.


Acknowledgments

• Special thanks to Selete for providing their former and recent evaluation results.

• Hermes Microvision Inc. for EBI evaluation.

• Tracy weed of Synopsys for EDA advise.

• All engineers in EUVL mask development group of Electronic Device Laboratory in DNP.


Thank you

euvl masks : progresses and issueseuvlsymposium.lbl.gov/pdf/2009/pres/o_m1-01_hayashi_dnp.pdf ·...

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