Laser Produced Plasma Source for

NXE:3300B EUVL Symposium Washington DC

Oct 27th, 2014

David C. Brandt

Outline

1. NXE:3300 source overview at customer Fabs

2. LPP Development in the Lab

3. EUV power scaling to 250W

4. Summary

EUVL

Symposium

Slide 2

EUV status:

Demonstrated >500 wafers per day at customer sites

• More than 500 wafers per day demonstrated

during endurance tests at 2 customer sites

• 7 NXE:3300B systems qualified and shipped to

customers

• 4 more NXE:3300B systems being integrated,

one more shipment planned for Q4

• 4th generation NXE system (NXE:3350B)

integration ongoing

• EUV cleanroom extension is under construction

Slide 3 Public

27 Oct 2014

27 nm Quasar Conv. 31 nm 19 nm Quasar Conv. 20 nm

Tip-to-tip

Slide 4

EUVL

Symposium

NXE:3300B - Good Imaging Performance

Tip-to-line

EUV (single expose)

19nm 27nm 16nm

Tip-to-tip Tip-to-line Lines and spaces

Ref: Presentations of Rudy Peeters and Eelco van Setten

9 July 2014

Slide 5

Public

NXE:3300B LPP Source Status in the Fab 40W Operating Node

Conversion

efficiency

Dose

stability

Drive

laser

power

Optical

transmission

Automation

Collector

lifetime

Droplet

Generator

lifetime

Dose stability / die

yield (>99.7%)

Increasing Source

Availability

Sources operating

with 2% CE

>50 Gpulses lifetime in

the field

CO2 laser power

~13kW

Collector protection

at 40W

MTBF

MTTR

Sources operating

under automated

closed loop control

Dose margin

~40%

>500 wafers

per day

productivity

Industrialization of NXE:3300B NXE:33x0 Source Development Underway

250W

Drive Laser

(Cymer 4)

NXE:3300B

Vessel

Production

NXE:3300B

Training

NXE:33x0

Source

(Cymer 4)

Development and Engineering Manufacturing

EUVL

Symposium

Slide 6

Produced Wafers on NXE:3300B at Customer Sites Reaching output in 8 months that took NXE:3100 2 years

NX

E:3

300B

Week since start

Six

NXE:3100

sources

Four

NXE:3300B

sources

Slide 7

EUVL

Symposium

Recent weeks

NX

E:3

100

Output approaching 20,000 wafers

NXE:3300B Source Operating for Months at >40W Stable LPP sources at customers

Slide 8

EUVL

Symposium

Four Customer Sources

Weekly average power measured in the source

Normalized to clean collector conditions

NXE:3300B Collector Protection on Field Sources ~0.5% EUVR loss per Gigapulse

Average collector transmission trend on field sources

EUVL

Symposium

Slide 9

Swap Criterion

Collector Transmission

Current ave. utilization ~2.5Gp per week

~20 weeks

Pulse Count (Gp)

Outline

1. NXE:3300B source overview at customer Fabs

2. LPP Development in the Lab

3. EUV power scaling to 250W

4. Summary

EUVL

Symposium

Slide 10

9 July 2014

Slide 11

Public

NXE:3300B LPP Source Status in the Lab Development of LPP Technology for Production

Conversion

efficiency

Dose

stability

Drive

laser

power

Optical

transmission

Automation

Collector

lifetime

Droplet

Generator

Lifetime

80W EUV power

with 3% CE Collector lifetime

projected to >100

Giga pulses

Collector protection

at 80W

MTBF

MTTR

In-situ collector

cleaning

Dose margin

improved to

~25% >500 wafers

per day

productivity

Availability

program

Def: Dose Margin: lost potential used to stabilize the

output power

Open Loop Power

0 1 2 3 4 5 6-1

-0.5

0

0.5

1

Avera

ge D

ose E

rror

[%]

Time [Hours]

Closed Loop Power Pow

er

(a.u

.)

Margin

Time

• Physical forces distort droplet

trajectories causing energy

instability

• Much of the lost potential

can be recovered with

advanced control

EUVL

Symposium

Slide 12

Local Force Compensation (LFC) Controls Stabilizes dose by compensating for forces on droplets

Slide 13

EUVL

Symposium

Forces on Droplets

Droplet Generator

Y-position

Z-position

Dro

ple

t P

ositio

n S

tab

ility

with/w

ithout

pla

sm

a

NXE:3300B 80W Source Power Demonstrations Multiple Runs on Lab Sources

Repeatable 80W one hour test runs

EUVL

Symposium

Slide 14

Dose Error

EUV Power

In the Lab (@ASML)

<0.5% Meets requirement

of <1.0% 3

~80W

Data collected on

Cymer 1, stand alone

test source,

NXE:3300B

>3% Conversion Efficiency (CE) at 80W Slide 15

Multiple runs at 80W with >3% CE on NXE:3300B

EUVL

Symposium

Data collected on Cymer 1, stand alone test source, NXE:3300B

Continuous Stable Source Operation at 80W Execellent die yield, low dose margin Slide 16

Continuous operation at 80Watts of EUV

(good collector protection)

EUVL

Symposium

~2.5mJ EUV pulse energy

~25% dose margin

NXE:3300B Collector Protection Configuration optimized to increase source availability

and achieve >100Gp collector lifetime

Improved Source Availability

by eliminating a long

maintenance procedure

Reflectivity loss

<0.5% per Gp

Public

Slide 17

Initial image 1.58 Gp 2.41 Gp 4.78 Gp 6.36 Gp

Data collected on M1, stand alone test source, NXE:3300B

In-situ Collector Cleaning Demonstration Significant improvement to COO and Availability

In-situ collector cleaning capability demonstrated with

NXE:3300B compatible configuration

• ‘As New’ Reflectivity restored

with in-situ cleaning

EUVL

Symposium

Slide 18

Data collected on Cymer 0, stand alone test source for collector cleaning, NXE:3300B

As New After Cleaning

Outline

1. NXE:3300 source overview at customer Fabs

2. LPP Development in the Lab

3. EUV power scaling to 250W

4. Summary

EUVL

Symposium

Slide 19

NXE:3300B Source power scaling to 250W Key scaling parameters: laser power, CE, dose margin

Confidential

June 25, 2014

Slide 20

Scaling parameter

EUV Power in Burst (W) 40 80 250

Laser Power* (kW) 13 16 27

Conversion Efficiency (%) 2.5 3.5 4.5

Dose margin (%) 35 20 10

* MP on droplet

High Power Drive Laser (Power Amplifiers) Supports roadmap requirements to get to 250W

• Stable power through duty cycle

• CO2 power needed for 125 wph

productivity • Operation at 50kHz

• Good beam quality

EUVL

Symposium

Slide 21

Data collected at Trumpf

High Power Seed System (Master Oscillator) High Power Drive Laser for 250W EUV

Slide 22

• Master Oscillator output power increased from

• Better matched with the new high power drive

laser

• Enables >40kW laser power

EUVL

Symposium

Current seed

High Power Seed System

0 100 200 300 4000

5

10

15

20

25

30

35

40

45

50

Seed System Output(W)

Out

put P

ower

(kW

)

0 100 200 300 4000

5

10

15

20

25

Seed System Output(W)

Adde

d Po

wer (

kW)

PA0

PA1

PA2

PA3

Data collected on Pilot 7 (MOPA Prepulse ), stand alone test source, 3100 drive laser with Proto HPSS

Stabilized High Output Power Prototype High Power Seed System (HPSS)

• Highest per-pulse EUV energy successfully operated with dose control

0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000-40

-35

-30

-25

-20

-15

-10

-5

0

5

Time [s]

Dose E

rror

[%]

Dose Error During 100W Run With HPSS

10-1

100

0

10

20

30

40

50

60

70

80

90

100

Dose Error [%]

Good D

ies (

Exposure

s)

[%]

Error

1.0% Error

99.7%

~94% die yield

(25mJ resist assumed)

EUVL

Symposium

Slide 23

~100W closed loop power at IF

250ms exposures, 50%DC, 4 hrs

3100 drive laser

Data collected on Pilot 7 (MOPA Prepulse ), stand alone test source, 3100 drive laser with Proto HPSS

Increased Conversion Efficiency Enabled by optimized target shape and size

EUVL

Symposium

Slide 24

Prepulse changes the tin droplet into an optimized target shape

leading to High CE

Data collected on Pilot 7

(MOPA Prepulse ), stand

alone test source, 3100 drive

laser with proto HPSS

Slide 25

EUVL

Symposium

Advanced Controller Improves Dose Margin to <10% Also increases power by 10%

Do

se e

rro

r [%

] D

ose

err

or

[%]

Time [sec]

Time [sec]

Current controller:

Good dose control at 40%

dose margin

Advanced controller :

Higher open loop power due

to improved CE

Good dose control at <10%

dose margin

Advanced controller: 75W open loop power 70W closed loop power

50

55

60

65

70

75

80

85

90

Time

Pow

er [W

]P

ow

er

(W)

0 100 200 300 400

Time [sec]

0 200 400 600 800 1000 1200 1400 1600 1800

38

40

42

44

time [sec]

Pow

er

[W]

Po

we

r (W

)

Current controller: 67W open loop power 40W closed loop power Data collected on Pilot 7

(MOPA Prepulse ), stand

alone test source, 3100

drive laser with proto HPSS

Outline

1. NXE:3300 source overview at customer Fabs

2. LPP Development in the Lab

3. EUV power scaling to 250W

4. Summary

EUVL

Symposium

Slide 26

Summary

• Industrialization of NXE:3300B; sources installed and operating at

customers

• Stable source operation allowing integration at chipmaker fabs

• 500 wpd productivity in 2014

• Collector lifetime >50 Gpulses

• MOPA-Prepulse source technology demonstrated improvements

• 80W expose power, long runs, multiple sources

• Collector lifetime demonstration extrapolates to >100Gp

• In-situ collector cleaning technology demonstrated

• Improves both COO and Availability

• Technology feasibility for 125 wph productivity demonstrated

• >35kW Drive Laser power demonstrated (27kW needed)

• ~4% EUV conversion efficiency demonstrated

• <10% dose margin demonstrated with advanced controls

EUVL

Symposium

Slide 27

Acknowledgements Thank you!

EUVL

Symposium

Slide 28

San Diego and Veldhoven

EUV Source Team