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Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen Road, Piscataway, NJ 08854

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Page 1: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces

Sylvie Rangan

Rutgers UniversityDepartment of Physics and Astronomy

136 Frelinghuysen Road, Piscataway, NJ 08854

Page 2: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

-Sunlight enters the structure,

excites electron-hole pairs

in dye. -Electron is transferred into

TiO2 conduction band, and

hole is filled by I- ions (3I- 2e- + I3-).

-Electron travels through circuit,

reduces I3- (2e- + I3- 3I-)

A Dye Sensitized Solar Cells (DSSCs): a potential low cost alternative

to Si solar cells.

Introduction

Page 3: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

Calculated Structural and Electronic Interactions of the Ruthenium Dye N3 with a Titanium Dioxide Nanocrystal, Petter Persson and Maria J. Lundqvist, J. Phys. Chem. B 2005, 109, 11918-11924

Energetics: N3 molecule on TiO2

e-

TiO2

I-/I3-

Electrolyte

HOMO

LUMO

N3

h

e-

50 fs

Page 4: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

New experimental approach of the subject

A few examples to show you it works!

Page 5: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

Inverse Photoemission

HOMO

LUMO

LUMO + 1

Ultra-violet Photoemission

HOMO

LUMO

LUMO + 1 UV

Experimental setup

Occupied and unoccupied states

in the same UHV system

Page 6: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

Experimental setup

VT-SPM OMICRON

Scanning Tunnel Microscope

I

Page 7: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

Outline

N3 adsorption

Single crystals

Technologically relevant substrates

TiO2(110) rutile ZnO(11-20)

TiO2 anatase nanoparticules

ZnO nanorods

N

N

OH

O

OHO

N

N

OH

O

OHO

Ru

N

C

S

N

C

S

Direct information electronic structure

analogue to N3 linker to the substrate

Comparison N3 - INAN

OHO

Page 8: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

Outline

Band alignment determination

Single crystals

TiO2(110) rutile ZnO(11-20)

Band alignment tuning strategies

ZnTPP derivatives

N

N N

N

Zn

O

HO

O

OH

Page 9: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

TiO2 (110) monocrystal

UHV surface preparationAtomically resolved TiO2(110)

30 nm x 30 nm

TiO2(110)

UHV surface passivation with pivalate ions (CH3)3CCOO-

Pivalate layer

30 nm x 30 nm

Sensitization in acetonitrile solution

80 nm x 80 nm

N3/TiO2

Page 10: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

O2p Ti3d

TiO2(110)

3.4 0.2

TiO2 (110)

UPS IPS

Page 11: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

N3 on TiO2 (110)

Page 12: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

3.6 eV

LUMO

LUMO + 1

N3TiO2

HOMO0.9 eV

0.5 eV

Energy diagram

3.2 eV

HOMOLUMO

Ti3d

TiO2(110)

N3 + TiO2(110)

Page 13: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

13

Influence of intermediate steps

HOMO and LUMO due to N3

Page 14: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

Anatase TiO2 nanoparticles

conducting glass

TiO2 100 Å

Ti3d

•Same HOMO-LUMO gap

•Anatase gap 0.2 eV larger than rutile gap

TiO2 nano

N3 + TiO2 nano

3.8 eV

LUMO

LUMO + 1

N3TiO2

HOMO 1.5 eV

0.7 eV

3.1 eV

(0.5 eV)

(0.9 eV)

(3.2 eV)

(N3 on TiO2(110))

Dunbar P. Birnie III group, Rutgers University

Page 15: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

0.2 eV

-0.9 eV

1.5 eV

N3+nanocrystals TiO2

From Photoelectrochemical cells, Michael Grätzel, Nature, nov 2001, 338

Incident Photon to Current conversion Efficiency

Minimum photon energy that produces current: 1.6 eV

Comparison with DSSC perfomances

TiO2

nanoparticlesN3

Ec=0.6 eV

Ev=-3.2 eV

Ef=0

UPS-IPS

HOMO

LUMO

Page 16: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

ZnO (11-20) epitaxial film

ZnO nanorods:

• Grown by Metalorganic chemical vapor deposition

•Length: 1.8 µm Diameter: 100 nm

Monoatomic step edge ~ 2 Å

100 nm x 100 nm Length (nm)

Yicheng Lu group, Rutgers University

ZnO substrates

Page 17: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

Zn3dO2p

Zn4sp

•ZnO Gap: 3.6 eV

3.2 0.4

N3 on ZnO(11-20)

3.2 eV

0.4 eV

LUMO

LUMO + 1

N3 ZnO

HOMO

1.3 eV

2.1 eV

4.5 eV

•ZnO Gap: 3.6 eV

•Dye features clearly visible

Page 18: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

3.4 eV

0.4 eV

LUMO

LUMO + 1

ZnO

1.3 eV

2.7 eV

N3 on ZnO - nanorod

•Smaller dye coverage

•Similar to single crystal ZnO

2.0 eV

N3

HOMO

Zn3dO2p

(2.1 eV)

(4.6 eV)4.5 eV

(1.3 eV)

(0.4 eV)

(3.2 eV)

Page 19: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

N

N

OH

O

OHO

N

N

OH

O

OHO

Ru

N

C

S

N

C

S

Isonicotinic acid : N3 linker analogue

N

OHO

• INA analog to the N3 Dye linker

• In a simple model, compared to N3, the INA electronic structure should have:

No Ru-N=C=S like HOMO

A LUMO of similar character as the N3 LUMO

Page 20: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

TiO2 ZnO

N3

TiO2 ZnO

INA

N3-INA comparison

Page 21: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

INA on TiO2 model calculations

(1) DFT Study of Bare and Dye-SensitizedTiO2 Clusters and Nanocrystals;Lundqvist, Nilsing, Persson, LunellIntern. Journal of Quantum Chemistry, Vol 106, 3214–3234 (2006)

(2) Anchor group influence on molecule–metal oxide Interfaces: Periodic hybrid DFT study of pyridinebound to TiO2 via carboxylic and phosphonic acid;M. Nilsing , P. Persson, L. OjamaChemical Physics Letters 415 (2005) 375–380

(1) (2)

Page 22: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

First Conclusion

• UPS and IPS in the same UHV system: The most direct method to characterize the ground state electronic

structure

•UV-visible absorption(exciton)/NEXAFS(core hole) typically used in the field

•First measurement of the electronic occupied/unoccupied structure of dye molecules on surfaces

•Can help improve theoretical treatment of dye/oxides systems.

• Energy level alignment of N3 on TiO2(110) and ZnO(11-20)

•N3 on TiO2 nanoparticles and ZnO nanorods

• INA vs N3: linker group good model for LUMO

Page 23: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

Zn-TetraPhenylPorphyrin

•Appropriate HOMO/LUMO levels position in energy.

•Functional groups added to the phenyl groups have not much influence on the TPP absorption properties.

ZnTPPZinc TetraPhenylPorphyrin

Page 24: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

HOMOsLUMOs

ZnTPP vs ZnP

Page 25: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

N

N N

N

Zn

O

HO

O

OH

Energy levels alignment

e-

TiO2 Electrolyte

HOMO

LUMO

ZnTPP

h

e-

E. Galoppini, Rutgers

Page 26: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

Approaches for band alignment tuning

Molecule/Molecule interaction

Adding spacer between them

Changing the linker to the surface

Adding a built-in dipole

Effect on electron transfer?

Page 27: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

Approaches for band alignment tuning

Modifying the ring electronic properties

Ex: Electron withdrawing groupsFluorination

Page 28: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

ZnTPP1 on TiO2

UPS IPS

TiO2(110)TiO2(110)

ZnTPP1+TiO2

ZnTPP1 ZnTPP1

N

N N

N

Zn

O

HO

O

OH

Page 29: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

3.6 eV

LUMO

LUMO + 1

ZnTPP1 TiO2

HOMO

2.6 eV

2.1 eV

Electronic structure and molecular orientation of a Zn-tetra-phenyl porphyrin multilayer on Si(111) C. Castellarin Cudia et al.90 eV

40.8 eV

Energy level alignment

Page 30: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

Comparison with other methods 1/2

Electron Injection and Recombination in Dye Sensitized Nanocrystalline Titanium Dioxide Films: A Comparison of Ruthenium Bipyridyl and Porphyrin Sensitizer DyesYasuhiro Tachibana, Saif A. Haque, Ian P. Mercer, James R. Durrant and David R. Klug, J. Phys. Chem. B, Vol. 104, No. 6, 2000

N3

TiO2

0.9 eV

0.5 eV

3.2 eV

LUMO

LUMO + 1

ZnTPP1

HOMO

2.1 eV

3.5 eV

2.6 eV

Page 31: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

2.0 eV

TiO2(110)ZnTPP

Ec=0.6 eV

Ev=-3.2 eV

Ef=0

UPS-IPS

HOMO

LUMO

Comparison with other methods 2/2

Tetrachelate Porphyrin Chromophores for Metal Oxide Semiconductor Sensitization: Effect of the Spacer Length and Anchoring Group PositionJonathan Rochford, Dorothy Chu, Anders Hagfeldt, and Elena GaloppiniJACS 129 (2007) 4655

650–700 nm

Page 32: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

ZnTPP1 electronic structure

ZnPHOMOs

ZnPLUMOs

Phenyls

Phenyls

Two part electronic structure for the free molecule

ZnP HOMO+LUMO: fixed energy

Phenyls: position depends on electron withdrawing groups

Simple model for simulated DOS

DOS = overlap ZnP + Phenyls groups

Photoemission cross-section not included

Page 33: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

Tunnel Microscopy Approach

UHV surface preparationAtomically resolved TiO2(110)

30 nm x 30 nm

TiO2(110)

UHV surface passivation with pivalate ions (CH3)3CCOO-

Pivalate layer

30 nm x 30 nm

3 nm x 2 nm

6 Å

Sensitization in ethanol solution

80 nm x 80 nm

N

N N

N

Zn

O

O

O

O

O

O

O

O

H

N+

Et EtEt

H

N+

Et EtEt

H

N+

Et EtEt

H

N+

Et EtEt

?

Page 34: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

ZnTPP3 adsorption

100 nm x 100 nm

Diameter = 20 Å

20 Å

Pivalic acid layer

Effect on the electronic structure

Adsorption modes? Aggregation?

30nmx30nm

Page 35: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

Another conclusion

ZnTPP derivatives good candidate to study fundamental properties related to energy level alignment….

…UPS/IPS useful and direct way for measuring energy level alignment….

…Still a lot of work to do!

Page 36: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

Jean-Patrick Theisen

Eric Bersch

THANKS !!!

Robert A. Bartynski

Senia Katalinic

Ryan Thorpe

Page 37: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

Typical UV-visible absorption spectrum

Absorption properties

S0

Soret (or B band) at 400 nm

S2 transition

S0 S1 transition

Weaker Q band at 550 nm

•S1 and S2 first and second excited states of the molecule.

•Fast internal conversion S2 → S1

•B and Q bands both arise from to * transitions and can be explained by considering the four frontier orbitals of the porphyrin.

Page 38: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

Goutermann Four-Orbital Model

HOMOs

LUMOs

Orbitals

Energy states

•Transitions between these orbitals gives rise to two 1Eu excited states.

•Orbital mixing splits these two states into a high energy state with a high oscillator strength and a low energy state with a low oscillator strength.

Soret (B) band

Q bands

S0

S1

S2

Page 39: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

15 nm x 15 nm

3 nm x 2 nm

Pivalic acid covered surface

6 Å

Page 40: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

N

N N

N

Zn

O

HO

O

OH

N

N N

N

Zn

O

HO

O

OH

Zn-based dyes

These dye are believed to adsorb perpendicular to the substrate and might form clusters of parallel molecules.

ZnTPP1 ZnTPP2

Page 41: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

Zn-based dyes

N

N N

N

Zn

O

O

O

O

O

O

O

O

H

N+

Et EtEt

H

N+

Et EtEt

H

N+

Et EtEt

H

N+

Et EtEt

This dye is believed to adsorb flat on the substrate.

ZnTPP3

Page 42: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

N

N N

N

Zn

O

HO

O

OH

Small effect on ZnTPP elecronic structure by changing the

substrate.

ZnTPP1 on TiO2 and ZnO

Page 43: Electronic Energy Levels Alignment of Dye Sensitized Oxide Surfaces Sylvie Rangan Rutgers University Department of Physics and Astronomy 136 Frelinghuysen

Approaches for band alignment tuning 3/3…

Modifying the ring electronic properties

Metal ion