cpec hirakawa group - iis.u-tokyo.ac.jp · gaas (6.5 nm)/al 0.3 ga 0.7 as (2.5 nm) sl femtosecond...

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Institute of Industrial Science Hirakawa Group ［Quantum nanophysics and its device applications］ Center for Photonics Electronics Convergence http://thz.iis.u-tokyo.ac.jp Quantum Semiconductor Electronics Quantum nanophysics and its device applications CPEC Ee-202 - From atto to tera - Quantum nanophysics and its device applications Department of Electronic Engineering and Information Systems Various intriguing physics shows up in quantum nanostructures owing to size quantization and electron-electron interaction effects. We investigate such novel physics in quantum nanostructures and look into their device applications. ■ Carrier dynamics and device applications of quantum nanostructures in the THz range ■ Physics and applications of single quantum dot transistors ■ Nanoscience and nanotechnologies toward novel single molecular devices ■ Molecular beam epitaxy of semiconductor quantum structures and nanofabrication technologies -1 0 1 2 3 4 Time (psec) T = 10K THz electric field, E THz (arb. units) 1 11 21 31 F b = 39 kV/cm GaAs (6.5 nm)/Al 0.3 Ga 0.7 As (2.5 nm) SL femtosecond laser Molecular beam epitaxy Site-controlled InAs quantum dots d = 40nm d = 80nm d = 120nm d = 150nm Drain Source Gate < 1 nm 5.9 uS 3.1 uS 0.2 uS 1.6 uS 0.4 uS N = 1 N = 0 C60 internal vibration Δ InAs量子ドット SEM image Typical size QDs h = ~ 20 nm SEM image Typical size QDs h = ~ 20 nm Bloch oscillation in semiconductor superlattices and its application to THz oscillators Fabrication of atomic-scale nanogap electrodes and single molecular transistors Physics and applications of single quantum dot transistors Crystal growth of quantum nanostructures by molecular beam epitaxy

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Page 1: CPEC Hirakawa Group - iis.u-tokyo.ac.jp · GaAs (6.5 nm)/Al 0.3 Ga 0.7 As (2.5 nm) SL femtosecond laser Molecular beam epitaxy Site-controlled InAs quantum dots d = 40nm d = 80nm

Institute of Industrial Science

Hirakawa Group［Quantum nanophysics and its device

applications］Center for Photonics Electronics Convergence

http://thz.iis.u-tokyo.ac.jp

Quantum Semiconductor Electronics

Quantum nanophysics and its device applications

CPEC

Ee-202- From atto to tera - Quantum nanophysics and its device applications

Department of Electronic Engineering and Information Systems

Various intriguing physics shows up in quantum nanostructures owing to size quantization and electron-electron interaction effects. We investigate such novel physics in quantum nanostructures and look into their device applications.

■ Carrier dynamics and device applications of quantum nanostructures in the THz range ■ Physics and applications of single quantum dot transistors■ Nanoscience and nanotechnologies toward novel single molecular devices■ Molecular beam epitaxy of semiconductor quantum structures and nanofabrication

technologies

-1 0 1 2 3 4Time (psec)

T = 10K

TH

z el

ect

ric f

ield

, E

TH

z (a

rb. u

nits

)

1

11

21

31

Fb = 39 kV/cm

GaAs (6.5 nm)/Al0.3

Ga0.7

As (2.5 nm) SL

femtosecond laser

Molecular beam epitaxy

Site-controlled InAs quantum dots

d = 40nm

d = 80nm

d = 120nm

d = 150nm

DrainSource

Gate

DrainSource

Gate

< 1 nm

5.9 uS3.1 uS

0.2 uS

1.6 uS

0.4 uS

N = 1

N = 0

C60 internal vibration

Δ

InAs量子ドット

SEM image Typical size QDs

h = ~ 20 nm

SEM image Typical size QDs

h = ~ 20 nm

Bloch oscillation in semiconductor superlattices and its application to THz oscillators

Fabrication of atomic-scale nanogap electrodes and single molecular transistors

Physics and applications of single quantum dot transistors Crystal growth of quantum nanostructures by molecular beam epitaxy

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