characterization of the near-field profile of semiconductor … · 2017-02-27 · abstract...
TRANSCRIPT
Characterization of the Near-FieldProfile of Semiconductor Lasers and the
Spot Size of Tightly Focused LaserBeams from Far-Field Measurements
Jeffrey L. Guttman and John M. FleischerPhoton Inc.
6860 Santa Teresa Blvd.,San Jose, CA 95119
7th International Workshop on Laser Beam and OpticsCharacterization
September 18-19, 2002
ABSTRACT
Characterization of the near field of typical semiconductor lasers and thespot size of tightly focused laser beams poses significant challenges todirect near-field profile measurement techniques. Far-field measurementsare considerably easier to perform and offer an attractive alternative for thischaracterization. To assess this alternative, profiles of edge-emitting laserdiodes and VCSELs, and the spot size of focused laser beams weredetermined from far-field and near-field measurements. In the far field,measurements were made using a 3D-scanning goniometric radiometer thatprovides irradiance profiles with angular extent to approximately ±70°.Indirect measures derived from these data using different methods arereported, including the spot size using the M2 times-diffraction-limitedapproximation, the Hankel transform Petermann II mode-field diameterused for optical fiber characterization, and a measure obtained from 2DFourier transform inversion of the far field using phase retrieval. In thenear field, direct profile measurements were made using scanning slit andknife-edge profilers, and a CCD camera with magnifying lenses.
PRESENTATION OUTLINE
Applications of Near Field CharacterizationMeasurement Techniques
• Direct Near Field• Indirect Far Field
Near and Far Field Data• Focused HeNe• Edge Emitting Laser Diode• VCSEL
Analysis MethodsSummary of ResultsConclusion
Near Field Characterization
ApplicationsTightly Focused Laser BeamsLDs - Modes, GeometryVCSELs - Modes, GeometryFibers - MFD, Aeff
Waveguides - Modes, GeometryTapered Fibers - Spot SizeQuantum Dots - Modes, GeometryOther “μm-subμm” Sources
Direct Near Field SourceMeasurement Techniques
Camera/Magnifying LensDiffraction Limited for “μm-subμm” ResolutionNA, MTF, and λ Dependence of OpticsAccess to Aperture Field
Scanning Slit or Knife-EdgeAccess to Aperture Field
Near Field Scanning Optical Microscopy (NSOM)Speed of MeasurementAccess to Aperture FieldExpensive
Indirect Near Field Characterizationfrom Far Field Measurement
Calculate Near Field quantitiesfrom measured Far FieldMinimal Optics LimitationsNo Access ConstraintsEase of MeasurementProvides “sub-µm” Measures
Indirect Near Field Characterizationfrom Far Field Measurement
Diffraction Limited 1/e2 Diameter• Calculated from Far-Field Divergence (d=4λ/πθ)
Mode-Field Diameter (MFD)• Petermann II Integral
Near Field 1/e2 Diameter• 2D Fourier Transform with Phase Retrieval
Edge-Emitting Laser Diode Near FieldCCD with 100x Objective
Edge-Emitting Laser Diode Far Field3D Rectangular View
Edge-Emitting Laser Diode Far Field3D Logarithmic Rectangular View
Edge-Emitting Laser Diode Far Field3D Polar View
Edge-Emitting Laser Diode Far FieldAnalysis: Fast and Slow Axes
Edge-Emitting Laser Diode Far FieldAnalysis: Fast and Slow Axes
Focused HeNe Laser Beam Near Field - Scanning Slit
Typical Profiles
Focused HeNe Laser Beam Near Field - Camera/40X Lens
Typical Profiles
Focused HeNe Laser Beam Far Field - Goniometric Radiometer
Far Field/Near Field Measurements ofVCSEL Modes
Near Field
Far Field
7mA 15mA 19mA 24mA 29mA
Near Field Profiles of VCSEL: Increasing Drive Current
VCSEL Near Field Profiles
0
50
100
150
200
250
-6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7
POSITION (microns)
AM
PLIT
UD
E (A
rbitr
ary
Uni
ts)
7mA
15mA
19mA
24mA
29mA
Far Field Profiles of VCSEL: Increasing Drive Current
VCSEL Far Field Profiles
1
10
100
1000
10000
100000
-50 -40 -30 -20 -10 0 10 20 30 40 50
ANGLE (degrees)
AM
PLIT
UD
E (A
rbitr
ary
Uni
ts)
4mA5mA6mA7mA15mA19mA24mA29mA
Near Field 1/e2 Diameter fromGaussian Approximation
• Equation for Diffraction Limited Width:
2
2
/1
/1
4
e
eD
πθλ
=
• Near-Field Diameter Calculated Using MeasuredFar-Field Divergence Angle
“Mode-Field Diameter” of Source
θθθθ
θθθθπλ θ
θ
θ
θ
dI
dIMFD
)cos()(sin)(
)cos()sin()(2)/(
3∫
∫
−
−=
Calculated using Petermann II Integral1,2:
1TIA/EIA Standard for Single-Mode Fiber2Integral Limit Adjusted for Background Scatter
VCSEL Far Field MFD Analysis:Principal Axes
Near Field 1/e2 Diameter from 2D FourierTransform of Far Field
Phase Retrieval Technique:“Error-Reduction” Algorithm*
)](exp[)()](exp[)()(
)]([)](exp[)()(
)](exp[)()(
)]([)](exp[)()(
11
1
xixfxixfx
uxixx
uiuFu
xuiuu
kkk
kkkk
kk
kkkk
g
GFgg
G
gFGG
θθ
θ
φ
φ
′
′′′′
′
==
==
=
==
++
−
*J. R. Fienup, “Phase retrieval algorithms: a comparison,”Applied Optics Vol. 21, No. 15, pp. 2758-2769, Aug. 1982.
•Fourier transform estimate
•Substitute measured modulus
•Inverse Fourier transform
•Apply support constraints
Near Field from Far FieldEdge-Emitting Laser Diode
3D View
2D Fourier Transform Camera Near Field
Near Field from Far FieldVCSEL @ 7 mA
3D View
Near Field Profile from 2D FourierTransform of FF with Phase Retrieval
Near Field Profile from Camera with100X Objective Lens
Near Field from Far FieldVCSEL @ 15 mA
3D View
Near Field Profile from 2D FourierTransform of FF with Phase Retrieval
Near Field Profile from Camera with100X Objective Lens
Near Field from Far FieldVCSEL @ 15 mA
3D View
Near Field Profile from 2D FourierTransform of FF with Phase Retrieval
Near Field Profile from Camera with100X Objective Lens
Near Field from Far FieldVCSEL @ 15 mA
Topographic View
Near Field Profile from Camera with100X Objective Lens
Near Field Profile from 2D FourierTransform of FF with Phase Retrieval
Far Field/Near Field Measurements ofFocused HeNe Laser Beam Spot Size
Lens AxisObjective Lens/CCD Camera XY Slit Profiler
"Times Diffraction Limit" Width (µm) MFD (µm) 1/e2 Width (µm) 1/e2 Width (µm)
1 Horizontal 5.46 5.22 5.52 5.671 Vertical 5.68 5.35 5.93 6.252 Horizontal 6.00 5.64 5.96 6.332 Vertical 5.93 5.65 6.34 6.36
Measurement TechniqueGoniometric Radiometer
Summary of Results
Far Field/Near Field Measurements ofEdge-Emitting Laser Diode
Device Axis Near Field
Camera/100X Lens
" Diffraction Limit" 1/e2 Width (µm)
Mode-Field Diameter* (µm)
2D Fourier Transform
1/e2 Width (µm)1/e2 Width (µm)
Laser Diode "Fast" 1.20 1.12 *(40 deg) 1.10 1.10Laser Diode "Slow" 2.96 3.07 *(16 deg) 3.30 3.20
Measurement TechniqueFar Field
Goniometric Radiometer
Summary of Results
Far Field/Near Field Measurements ofVCSEL for Different Modes
Device Axis Near Field
Camera/100X Lens " Diffraction Limit" Width
(µm)Mode-Field Diameter
(µm)2D Fourier Transform
(µm)D4σ Width
(µm)VCSEL @ 7mA 1 7.86 7.83 7.92 7.87
2 7.71 7.52 7.83 7.60VCSEL @ 15mA 1 3.99 4.34 4.47 8.95
2 4.02 4.35 4.67 9.63
Measurement TechniqueFar Field
Goniometric Radiometer
Summary of Results
Conclusion
Measurements of NF and FF• Focused HeNe, LDs, and VCSELs• NF: Camera/Objective Lens, Slit Profiler• FF: Scanning Goniometric Radiometer
Comparison of Results• NF: 1/e2 , d4σ,• FF: Gaussian, MFD, 2D FFT 1/e2
Favorable Comparison ~5-10%• Tends to Validate Far Field Methods
Further Development Recommended
“Mode-Field Diameter”
θθθθ
θθθθπλ θ
θ
θ
θ
dI
dIMFD
)cos()(sin)(
)cos()sin()(2)/(
3∫
∫
−
−=
Far Field Petermann II Integral:
Far Field/Near FieldVCSEL Mode @ 7mA
Far Field/Near FieldVCSEL Mode @ 15mA
Far Field/Near FieldVCSEL Mode @ 19mA
Far Field/Near FieldVCSEL Mode @ 24mA
Far Field/Near FieldVCSEL Mode @ 29mA