Jamie PhillipsArthur F. ThurnauProfessorEECS DepartmentUniversity of Michigan

2305 EECS1301 Beal Avenue

Ann Arbor, MI 48109T 734–764–4157

B jphilli@umich.edu

Education1998 Ph.D. in Electrical Engineering, University of Michigan, Ann Arbor, MI.

Thesis: Self-Assembled In(Al,Ga)As/Ga(Al)As Quantum Dots for Intersubband Detectors1996 M.S. in Electrical Engineering, University of Michigan, Ann Arbor, MI.1994 B.S. in Electrical Engineering, University of Michigan, Ann Arbor, MI.

Professional Experience2014-present Arthur F. Thurnau Professor, Dept. of Electrical Engineering and Computer

Science, University of Michigan, Ann Arbor, MI.2019-present Director, Lurie Nanofabrication Facility, University of Michigan, Ann Arbor, MI.2013-2019 Associate Chair of Undergraduate Affairs, Electrical and Computer Engineer-

ing Division, University of Michigan, Ann Arbor, MI.2013-2014 Professor, Dept. of Electrical Engineering and Computer Science, University of

Michigan, Ann Arbor, MI.2008-2013 Associate Professor, Dept. of Electrical Engineering and Computer Science,

University of Michigan, Ann Arbor, MI.2002-2008 Assistant Professor, Dept. of Electrical Engineering and Computer Science,

University of Michigan, Ann Arbor, MI.1999-2001 Research Scientist, Rockwell Science Center, Thousand Oaks, CA.1998-1999 Postdoctoral Researcher, Sandia National Laboratories, Albuquerque, NM.

Honors and Awards2019 Staff-Faculty Partnership Award, College of Engineering, University of Michigan.2017 IEEE Transactions on Education Theodore E. Batchman Best Paper Award,

IEEE Education Society.2014 Arthur F. Thurnau Professorship, University of Michigan.2011 University Undergraduate Teaching Award, University of Michigan.2007 Young Faculty Award, DARPA/MTO.2007 Outstanding Achievement Award, EECS Department, University of Michigan.

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2003 CAREER Award, National Science Foundation.1999 Paul Rappaport Award, IEEE Electron Devices Society.1997 Best Student Paper, North American Conference on Molecular Beam Epitaxy.

External Professional Service2019-present ABET Program Evaluator.2018-2019 Electronic Materials Conference, Past Chair.2016-2017 Electronic Materials Conference, General Chair.2014-2015 Electronic Materials Conference, ProgramChair.

2011-present Journal of Electronic Materials, Associate Editor.2014 International Workshop on ZnO and Related Materials, Program Chair.

2011-2013 Electronic Materials Conference, Secretary.2011-2013 Device Research Conference, Program Committee.2010-2012 AVS Michigan Chapter, Executive Committee.

2011 MRS Fall Meeting, Co-Organizer.2006-2011 Electronic Materials Conference, Program Committee.2005-2010 J. Electronic Materials, Assoc. Editor, Special Issue III-Nitrides, SiC, and ZnO.

2008 International Workshop on ZnO and Related Materials, Program Committee.2007-2008 American Vacuum Society EMPD, Executive Committee.

University Service2019-present Lurie Nanofabrication Facility, Director.2019-present ECE Strategic Planning Committee, Member.2015-2019 ABET Coordinator, EE Program.2013-2019 ECE Division, Associate Chair of Undergraduate Affairs.2016-2018 ECE Undergraduate Curriculum Innovation Committee, Chair.2011-2018 ECE Undergraduate Academics Committee, Chair.2013-2016 ECE Undergraduate Recruiting and Activities Committee, Chair.2013-2017 College of Engineering Curriculum Committee, Member.2011-2017 Lurie Nanofabrication Facility Council, Member.2011-2013 ECE Executive Committee, Member.2008-2011 EECS Alumni Society, President.2006-2011 ECE Graduate Committee, Member.2003-2011 College of Engineering Manufacturing Council, Member.2002-2007 EECS Undergraduate Office, Academic Advisor.2002-2007 Michigan Nanofabrication Facility Operations Committee, Member.

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Professional Membership{ Institute for Electrical and Electronics Engineers (IEEE) Senior Member{ Materials Research Society{ American Society for Engineering Education{ Eta Kappa Nu (Electrical and computer engineering honor society of the IEEE){ Phi Kappa Phi (Collegiate honor society){ Tau Beta Pi, Eminent Engineer (Engineering honor society)

Laboratory Expertise{ III-V, II-VI, and oxide material deposition by MBE, MOCVD, PLD{ Materials characterization by XRD, SEM, TEM, AFM, Hall effect, C-V, DLTS, P-E,photoconductive decay, photoluminescence, ellipsometry, reflectance, FTIR, UV-Vis

{ Device fabrication processes: photolithography, wet chemistry, CVD, RIE, contacts{ Electrical, optical, and electro-optic device characterization{ Device/circuit modeling using Sentaurus Device, Medici, SPICE, Matlab

Courses TaughtENGR 100, Introduction to Engineering.EECS 200, Electrical Engineering Systems Design.EECS 215, Introduction to Circuits.EECS 320, Introduction to Semiconductor Devices.EECS 421, Properties of Transistors.EECS 429, Semiconductor Optoelectronic Devices.EECS 529, Semiconductor Lasers and LEDs.EECS 598, Solar Cell Device Physics.ECE Camp Electrify, Sense It (Week long high school summer camp).

Doctoral Graduates2019 Justin Easley, Carrier Transport in Auger-Suppressed Infrared Detector Materials.2015 Alan Teran, Spectrum-Dependent Photovoltaic Energy Harvesting.2014 Chihyu Chen, ZnTeO and Oxygen Doped II-VI Ternary Alloys for Intermediate Band

Solar Cells.2014 Justin Foley, Subwavelength Dielectric Grating-based Broadband Reflectors and Nar-

rowband Transmission Filters.2013 Jinyoung Hwang, Engineered type-II heterostructure for high efficiency solar cell

application.2012 Jeff Siddiqui, Investigation of Electrical Instabilities and Interface Change in ZnO

Thin Film Transistors.

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2012 Anne Itsuno, Bandgap-Engineered HgCdTe Infrared Detector Structures for ReducedCooling Requirements.

2010 Willie Bowen, Thin Film Electronics Based on ZnO and ZnO/MgZnO Heterojunc-tions.

2010 Albert Shihchun Lin, Modeling of Solar Cell Efficiency Improvement Using OpticalGratings and Intermediate Absorption Band.

2009 Emine Çağin, Integration of Functional Oxides With the Semiconductor Zinc Oxide.2009 Weiming Wang, Intermediate Band Solar Cells Based on ZnTe:O.2009 Pierre Emelie, HgCdTe Auger-suppressed infrared detectors under non-equilibrium

operation.2006 Ding-Yuan Chen, Ferroelectric thin films for microwave and photonics applications.2006 Kaveh Moazzami, Characterization of optoelectronic properties of HgCdTe and ZnO

II-VI semiconductors for infrared and ultraviolet detector applications.

Current Graduate Students2015-present Minhyung Ahn, Ultrafast Laser Irradiation of Wide Bandgap Semiconductors.2016-present Michael Barrow, Guided Mode Resonance for Infrared Narrowband Transmission

Filters.2019-present Armando Gil, Type-II Superlattices for SWIR Detection.2019-present Rebecca Lentz, Type-II Superlattices for SWIR Detection.2016-present Hannah Masten, Gallium Oxide Materials and Devices for Power Electronics.2014-present Eun Seong Moon, Photovoltaic Energy Harvesting For Low-Power Wireless Sensors.

Masters Students2015-2018 Martin Scherr, Infrared Spectral Filters Based on Subwavelength Dielectric Gratings.2012-2014 Connor Field, Quantum Dots for Next Generation Solar Cells.2010-2012 Adrian Bayraktaroglu, Ferroelectric and semiconducting oxide thin films.2010-2012 Bor-Chau Juang, Electronic structure and optical properties of type-II quantym dots.2002-2005 Tim Murphy, Epitaxial growth and doping of ZnO by molecular beam epitaxy.

Undergraduate Students2019 Arynn Gallegos, Infrared Optoelectronics for Biosensing, SROP Program.2015 Cristina Guillen, Parylene Infiltration in GaAs Nanowires, NNIN REU Program.2015 Marshall Versteeg, Femtosecond Laser-Induced Doping of SiC, UM Energy Institute

UROP Program.2015 Nick Folz, Infrared Absorption in Glucose.2015 Ian Raber, Indoor Photovoltaic Characterization, RISE Program.

2014-2015 Joeson Wong, Photovoltaic Energy Harvesting from Indoor Lighting.2013 Arthur Bowman, Infrared Filtering Via Sub-Wavelength Gratings for Hyperspectral

Imaging.

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2013 Jiazhen Zheng, Photoluminescence of ZnTeO.2013 Kevin Nguy, Photoluminescence of Wide Bandgap II-VI Materials.2012 Amy Chiang, Admittance spectroscopy of solar cell materials.2012 Katherine Nygren, Infrared sub-wavelength gratings for infrared detectors.2011 Connor Field, Chemical Bath Deposition of ZnS Thin Films.

2010-2011 Tanya Das, Modeling of HgCdTe infrared detectors and integrated optical elements.2010 Scott Bakkila, Ferroelectric thin films for reconfigurable RF electronics in next gen-

eration wireless communications, NNIN REU Program.2010 Michael Tulman, Modeling of integrated optical elements for infrared imaging .2009 Du Nguyen, Atomic layer deposition of high-k dielectrics for thin film transistors ,

NNIN REU Program.2008 Michael McCormick, Modeling of wire grid polarizers and Fabry-Perot cavities for

infrared detection .2007 David Maxwell, Pulsed laser deposition of vanadium oxide thin films .

2005-2006 Pak-Yuen Chan, Pulsed laser deposition of ZnO.2006 George Cramer, ZnO thin film transistors, NNIN REU Program.2005 Vinay Alexander, Pulsed laser deposition of thin film ferroelectrics.2005 Song Liang Chua, Electronic characterization of ZnO thin films .

2004-2005 William Luong, Pulsed laser deposition of ferroelectric thin films for tunable mi-crowave capacitors.

2004 Nicole Staszkiewicz, ZnO nanowires, NNIN REU Program.2003-2004 Jeremy Tolbert, Capacitance-voltage measurements for material characterization.

2003 Nafisa Muzzafar, Thin film Mach-Zendher interferometers.2003-2004 Sameer Walavalkar, Epitaxial growth simulation, bandstructure calculation.

2002 DaHan Liao, Optical properties of HgCdTe.

Sponsored Projects4/2019-1/2021 Air Force subcontract from Princeton Infrared Technologies, PI, Modeling and

Development of Optimized 2.1um Detection MQW Material.1/2019-5/2019 Air Force subcontract from Princeton Infrared Technologies, PI, Multi Quantum

Well Avalanche Photodiodes for 2.04um Detection.3/2019-9/2019 OSD subcontract from Princeton Infrared Technologies, PI, High Resolution

SWIR E-O Seeker.1/2019-5/2019 MDA subcontract from Princeton Infrared Technologies, PI, Avalanche Photo-

diode Design for Low Earth Orbit LADAR System.9/2018-8/2020 DSTL/MoD, co-PI, Ultra-Miniature Imager Technical Demonstrator.6/2018-5/2021 NSF, co-PI, Design and growth of high entropy oxides with tailored ionic dynamics

for memory and computing applications.6/2018-5/2020 NIH, co-PI, A 100um Scale Single Unit Neural Recording Probe Using IR-Based

Powering and Communication.

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11/2017-4/2018 Air Force subcontract from Princeton Infrared Technologies, PI, Focal PlaneArray for Coherent LADAR.

9/2016-8/2019 Lloyd’s Register Foundation, PI, Ultrafast Nanostructuring of Wide Bandgap SiCfor Electronics in Harsh Environments.

10/2016-3/2018 DSTL/MoD, co-PI, Highly Size Constrained Logging Sensor Development.9/2016-8/2018 NSF subcontract from Cubeworks, PI, Millimeter-Scale Wireless Sensor Node for

Intracranial Pressure Monitoring.11/2015-10/2018

MDA, PI, Narrow-Band Spectral Filtering via Silicon Subwavelength Dielectric Grat-ings.

6/2014-5/2018 NSF, NIH, co-PI, SCH: INT: Wireless Implantable Electronic Biosensors for TumorMonitoring.

4/2014-3/2016 DSTL/MoD, co-PI, Architectural design Study for M3 MM Scale Computing GPSLogger .

2/2012-1/2013 Toyota, PI, Highly Mismatched Alloys with Intermediate Band for High-EfficiencySolar Energy Conversion.

8/2010-7/2015 NSF, PI, Materials World Network: Intermediate Band Semiconductor Materials forHigh Efficiency Solar Energy Conversion.

2/2011-12/2011 ARO subcontract from EPIR Technologies, PI, High Operating Temperature De-tectors and Subwavelength Gratings.

2/2011-12/2011 ARO subcontract from EPIR Technologies, PI, 8, Sub-Wavelength Gratings forInfrared Spectroscopy.

7/2010-6/2012 KAUST, co-PI, Energy Efficient Photonic and Spintronic Devices.1/2010-6/2010 NASA subcontract from EPIR Technologies, PI, Passively-Cooled Hyperspectral

Infrared Detectors.9/2009-8/2012 NSF, co-PI, Novel RF/Microwave Switchable Filters Based on Electrostrictive Reso-

nance in Ferroelectric Thin Films.8/2009-7/2014 DOE, co-PI, EFRC: Center for Solar and Thermal Energy Conversion (CSTEC).6/2008-12/2009 CRLT, PI, Investigating Student Learning (ISL) Grant.3/2008-8/2011 ACS-PRF, PI, Intermediate-band optoelectronic transitions in ZnTeO for high-

efficiency solar energy.10/2008-9/2010 ARO, subcontract from EPIR Technologies, PI, Advanced High Operating Tem-

perature Midwave Infrared Detectors.1/2008-12/2008 EPIR Technologies, PI, Approaches for high-performance LWIR detectors based on

HgCdTe/Si.1/2008-6/2008 MDA, subcontract from EPIR Technologies, PI, High Operating Temperature

HgCdTe Detectors for Interceptor Seekers.7/2007-6/2008 DARPA, PI, Oxide Electronics for Integrated Microsystems and Displays.1/2006-4/2006 ARO, subcontract from EPIR Technologies, PI, Development of low stress ohmic

contacts to HgCdTe.9/2005-7/2006 DARPA, subcontract from EPIR Technologies, PI, Modeling of Infrared Detectors

for High-Speed Room Temperature Imaging.

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4/2004-3/2008 DARPA, co-PI, Center for Optoelectronic Nanostructured Semiconductor Technolo-gies (CONSRT).

9/2004-8/2007 AFOSR, co-PI, Ultraviolet Electrically Injected Light Sources With Epitaxial ZnO-Based Heterojunctions.

1/2004-12/2004 Rackham, PI, Epitaxial Growth of CdZnO/MgZnO Heterostructures and Nanostruc-tures.

9/2003-8/2004 OVPR, PI, Characterization of ZnO Point Defects and Schottky Diodes.2/2003-1/2008 NSF, PI, CAREER: Ferroelectric Heterostructure Integration With GaAs Optoelec-

tronic Devices.5/2002-1/2005 ONR, PI, Infrared Focal Plane Array Material Science Project - Optical Properties of

HgCdTe.

PublicationsBooks

[1] W. H. Hayt, J. E. Kemmerly, J. D. Phillips, and S. M. Durbin. Engineering Circuit Analysis,9th Edition (McGraw-Hill, 2019).

Book Chapters[1] J. Phillips, W. Bowen, E. Cagin, and W. Wang. “Electronic and Optoelectronic Devices Based

on Semiconducting Zinc Oxide”. Comprehensive Semiconductor Science and Technology,edited by P. Bhattacharya, R. Fornari, and H. Kamimura, volume 6, 101–127 (Elsevier, 2011).

[2] J. Phillips, A. Stiff-Roberts, and P. Bhattacharya. “Quantum Dot Infrared Detectors”. Hand-book of Semiconductor Nanostructures and Nanodevices, edited by A. A. Balandin and K. L.Wang, volume 4, 195–215 (American Scientific Publishers, 2006).

[3] J. Phillips, A. Stiff-Roberts, and P. Bhattacharya. “Quantum Dot Infrared Photodetector”.Encyclopedia of Nanoscience and Nanotechnology, edited by H. Nalwa, 131–141 (AmericanScientific Publishers, 2004).

Patents[1] J. Foley, J. D. Phillips, and S. Young. “Narrowband transmission filter”. US9945666B2

(2018).

Journal Articles (peer-reviewed archival journals)[1] M. Ahn, A. Sarracino, A. Ansari, B. Torralva, S. Yalisove, and J. Phillips. “Surface morphology

and straight crack generation of ultrafast laser irradiated beta-Ga2O3”. Journal of AppliedPhysics, 125(22), 223,104 (2019).

[2] J. Easley, C. R. Martin, M. H. Ettenberg, and J. Phillips. “InGaAs/GaAsSb Type II Superlat-tices for SWIR Detection”. Journal of Electronic Materials, https://doi.org/10.1007/s11,664–019–07,441–x (2019).

[3] H. N. Masten, J. D. Phillips, and R. L. Peterson. “Ternary Alloy Rare-Earth Scandateas Dielectric for b-Ga2O3 MOS Structures”. IEEE Transactions on Electron Devices, doi:10.1109/TED.2019.2911237 (2019).

[4] E. Moon, I. Lee, D. Blaauw, and J. D. Phillips. “High-efficiency photovoltaic modules ona chip for millimeter-scale energy harvesting”. Progress in Photovoltaics: Research andApplications, doi:10.1002/pip.3132 (2019).

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[5] M. Ahn, R. Cahyadi, J. Wendorf, W. Bowen, B. Torralva, S. Yalisove, and J. Phillips. “Lowdamage electrical modification of 4H-SiC via ultrafast laser irradiation”. Journal of AppliedPhysics, 123(14), 145,106 (2018).

[6] M. Barrow, M. Scherr, and J. Phillips. “Influence of Subwavelength Grating Asymmetry onLong-Wavelength Infrared Transmittance Filters”. IEEE Photonics Journal, 10(6), 2700,808(2018).

[7] J. Easley, E. Arkun, B. Cui, M. Carmody, L. Peng, M. Grayson, and J. Phillips. “Analysis ofCarrier Transport in n-Type Hg1-xCdxTe with Ultra-Low Doping Concentration”. Journal ofElectronic Materials, 47(10), 5699–5704 (2018).

[8] J. Easley, E. Arkun, M. Carmody, and J. Phillips. “Variable-Field Hall Effect Analysis ofHgCdTe Epilayers with Very Low Doping Density”. Journal of Electronic Materials, 46(9),5479–5483 (2017).

[9] E. Moon, D. Blaauw, and J. Phillips. “Infrared Energy Harvesting in Millimeter-Scale GaAsPhotovoltaics”. IEEE Transactions on Electron Devices, 64(11), 4554 – 4560 (2017).

[10] E. Moon, D. Blaauw, and J. D. Phillips. “Small-Area Si Photovoltaics for Low-Flux InfraredEnergy Harvesting”. IEEE Transactions on Electron Devices, 64(1), 15–20 (2017).

[11] E. Moon, D. Blaauw, and J. D. Phillips. “Subcutaneous Photovoltaic Infrared Energy Harvest-ing for Bio-implantable Devices”. IEEE Transactions on Electron Devices, 64(5), 2432–2437(2017).

[12] I. Ramiro, E. Antolin, H. Jinyoung, A. Teran, A. J. Martin, P. G. Linares, J. Millunchick,J. Phillips, A. Marti, and A. Luque. “Three-bandgap absolute quantum efficiency inGaSb/GaAs quantum dot intermediate band solar cells”. IEEE Journal of Photovoltaics,7(2), 508–12 (2017).

[13] I. Ramiro, J. Villa, C. Tablero, E. Antolin, A. Luque, A. Marti, J. Hwang, J. Phillips, A. J.Martin, and J. Millunchick. “Analysis of the intermediate-band absorption properties of type-IIGaSb/GaAs quantum-dot photovoltaics”. Physical Review B, 96(12), 125,422 (2017).

[14] M. Scherr, M. Barrow, and J. Phillips. “Long-wavelength infrared transmission filters viatwo-step subwavelength dielectric gratings”. Optics Letters, 42(3), 518–521 (2017).

[15] M. DeJarld, A. Teran, M. Luengo-Kovac, L. Yan, E. Moon, S. Beck, C. Guillen, V. Sih,J. Phillips, and J. Mirecki Millunchick. “The effect of doping on low temperature growthof high quality GaAs nanowires on polycrystalline films”. Nanotechnology, 27(49), 495,605(2016).

[16] J. Foley, S. Daly, C. Lenaway, and J. Phillips. “Investigating Student Motivation and Per-formance in Electrical Engineering and its Subdisciplines”. IEEE Trans. Education, 59(4),241–247 (2016).

[17] I. Ramiro, E. Antolín, J. Hwang, A. Teran, A. J. Martin, P. G. Linares, J. Millunchick,J. Phillips, A. Martí, and A. Luque. “Three-Bandgap Absolute Quantum Efficiency inGaSb/GaAs Quantum Dot Intermediate Band Solar Cells”. IEEE Journal of Photovoltaics,7(2), 508–512 (2016).

[18] S. Sengupta, T. Templeman, C. Chen, E. Moon, M. Shandalov, V. Ezersky, J. Phillips, andY. Golan. “Chemical epitaxy and interfacial reactivity in solution deposited PbS on ZnTe”.Journal of Materials Chemistry C, 4(10), 1996–2002 (2016).

[19] A. S. Teran, E. Moon, W. Lim, G. Kim, I. Lee, D. Blaauw, and J. D. Phillips. “Energy Harvest-ing for GaAs Photovoltaics Under Low-Flux Indoor Lighting Conditions”. IEEE Transactionson Electron Devices, 63(7), 2820–2825 (2016).

[20] J. Foley and J. Phillips. “Normal incidence narrowband transmission filtering capabilitiesusing symmetry protected modes of a dielectric grating”. Optics Letters, 40(11), 2637–2640(2015).

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[21] A. Teran, J. Wong, W. Lim, G. Kim, Y. Lee, D. Blaauw, and J. Phillips. “AlGaAs Photo-voltaics for Indoor Energy Harvesting in mm-Scale Wireless Sensor Nodes”. IEEE Transactionson Electron Devices, 62(7), 2170–2175 (2015).

[22] A. S. Teran, C. Chen, E. Lopez, P. G. Linares, I. Artacho, A. Marti, A. Luque, and J. D. Phillips.“Heterojunction Band Offset Limitations on Open-Circuit Voltage in p-ZnT-ZnSe Solar Cells”.IEEE J. Photovoltaics, 5(3), 874–877 (2015). doi:10.1109/JPHOTOV.2015.2411057.

[23] M. J. Abere, C. Chen, D. R. Rittman, M. Kang, R. S. Goldman, J. D. Phillips, B. Torralva,and S. M. Yalisove. “Nanodot formation induced by femtosecond laser irradiation”. AppliedPhysics Letters, 105(16), 163,103 (2014).

[24] E. Antolin, C. Chen, I. Ramiro, J. Foley, E. Lopez, I. Artacho, J. Hwang, A. Teran, E. Hernan-dez, C. Tablero, A. Marti, J. D. Phillips, and A. Luque. “Intermediate Band to ConductionBand Optical Absorption in ZnTeO”. IEEE Journal of Photovoltaics, 4(4), 1091–1094 (2014).

[25] C. Chen, J. Zheng, K. Nguy, F. Naab, and J. Phillips. “Distinguishing Optical Behavior ofOxygen States and Native Deep Level Emission in ZnTe”. Journal of Electronic Materials,43(4), 879–883 (2014).

[26] J. M. Foley, S. M. Young, and J. D. Phillips. “Symmetry-protected mode coupling near normalincidence for narrow-band transmission filtering in a dielectric grating”. Physical Review B,89(16), 165,111 (2014).

[27] J. Hwang, K. Lee, A. Teran, S. Forrest, J. D. Phillips, A. J. Martin, and J. Millunchick.“Multiphoton Sub-Band-Gap Photoconductivity and Critical Transition Temperature in Type-II GaSb Quantum-Dot Intermediate-Band Solar Cells”. Physical Review Applied, 1(5), 051,003(2014).

[28] E. Plis, S. Myers, D. Ramirez, E. P. Smith, D. Rhiger, C. Chen, J. D. Phillips, and S. Krishna.“Dual color longwave InAs/GaSb type-II strained layer superlattice detectors”. Infrared Phys.Techn., (0) (2014). doi:http://dx.doi.org/10.1016/j.infrared.2014.09.027.

[29] S. A. Sis, S. Lee, V. Lee, A. K. Bayraktaroglu, J. D. Phillips, and A. Mortazawi. “Intrinsicallyswitchable, high-Q ferroelectricon-silicon composite film bulk acoustic resonators”. Ultrason-ics, Ferroelectrics and Frequency Control, IEEE Transactions on, 61(2), 231–238 (2014).

[30] L. Zhou, C. Chen, H. Jia, C. Ling, D. Banerjee, J. Phillips, and Y. Wang. “Oxygen Incorpo-ration in ZnTeO Alloys via Molecular Beam Epitaxy”. Journal of Electronic Materials, 43(4),889–893 (2014). doi:10.1007/s11664-013-2960-x.

[31] L. Zhou, C. Chen, H. Jia, C. Ling, D. Banerjee, J. Phillips, and Y. Wang. “Oxygen Incorpo-ration in ZnTeO Alloys via Molecular Beam Epitaxy”. Journal of Electronic Materials, 43(4),889–893 (2014).

[32] C. Chen, S. J. Kim, X. Pan, and J. D. Phillips. “Epitaxial growth of ZnTe on GaSb (100)using in situ ZnCl2 surface clean”. J. Vac. Sci. Technol. B, 31(3), 03C118 (2013).

[33] H. Chi, C. Chen, J. D. Phillips, and C. Uher. “Transport properties of ZnTe:N thin films”.Applied Physics Letters, 103, 042,108 (2013).

[34] J. Foley, S. Young, and J. Phillips. “Narrowband Mid-Infrared Transmission Filtering of aSingle Layer Dielectric Grating”. Applied Physics Letters, 103(8), 071,107 (2013).

[35] V. Lee, S. A. Sis, J. D. Phillips, and A. Mortazawi. “Intrinsically Switchable FerroelectricContour Mode Resonators”. Microwave Theory and Techniques, IEEE Transactions on, 61(8),2806–2813 (2013).

[36] A. Lin and J. D. Phillips. “Resolving Spectral Overlap Issue of Intermediate Band SolarCells using Non-uniform Subbandgap State Filling”. Progress in Photovoltaics: Research andApplications, DOI: 10.1002/pip.2358 (2013).

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[37] A. J. Martin, J. Hwang, E. Marquis, E. P. Smakman, T. W. Saucer, G. V. Rodriguez,A. Hunter, V. Sih, P. M. Koenraad, J. D. Phillips, and J. Mirecki Millunchick. “The disinti-gration of GaSb/GaAs nanostructures upon capping”. Applied Physics Letters, 102, 113,103(2013).

[38] A. Chen, H. Zhou, Z. Bi, Y. Zhu, Z. Luo, A. Bayraktaroglu, J. Phillips, E.-M. Choi, J. L.MacManus-Driscoll, S. J. Pennycook, J. Narayan, Q. Jia, X. Zhang, and H. Wang. “A NewClass of Room-Temperature Multiferroic Thin Films with Bismuth-Based Supercell Structure”.Advanced Materials, DOI: 10.1002/adma.201203051 (2012).

[39] A. Das, J. Heo, A. Bayraktaroglu, J. Phillips, W. Guo, T. K. Ng, B. Ooi, and P. Bhattacharya.“Room temperature strong coupling effects in a single ZnO nanowire microcavity”. OpticsExpress, 20(11), 11,830–11,837 (2012).

[40] J. Foley, A. Itsuno, T. Das, S. Velicu, and J. Phillips. “Broadband Long-Wavelength InfraredSi/SiO2 Subwavelength Grating Reflector”. Optics Letters, 111(9), 1523–1525 (2012).

[41] J. Hwang, A. J. Martin, J. M. Millunchick, and J. D. Phillips. “Thermal emission in type-II GaSb/GaAs quantum dots and prospects for intermediate band solar energy conversion”.Journal of Applied Physics, 111(8), 074,514 (2012).

[42] A. M. Itsuno, J. D. Phillips, and S. Velicu. “Design of an Auger-suppressed unipolar HgCdTeNBvN photodetector”. Journal of Electronic Materials, 41(10), 2886–2892 (2012).

[43] A. M. Itsuno, J. D. Phillips, and S. Velicu. “Mid-Wave Infrared HgCdTe nBn Photodetector”.Applied Physics Letters, 100(17), 161,102 (2012).

[44] S. J. Kim, B. C. Juang, W. Wang, J. R. Jokisaari, C. Chen, J. D. Phillips, and X. Pan.“Evolution of self-assembled Type-II ZnTe/ZnSe nanostructures: Structural and electronicproperties”. Journal of Applied Physics, 111(9), 093,524 (2012).

[45] J. Siddiqui, J. Phillips, K. Leedy, and B. Bayraktaroglu. “Illumination instabilities inZnO/HfO2 thin film transistors and influence of grain boundary charge”. Journal of Ma-terials Research, 27, 2199–2204 (2012).

[46] J. J. Siddiqui, J. D. Phillips, K. Leedy, and B. Bayraktaroglu. “Bias-Temperature-StressCharacteristics of ZnO/HfO2 Thin Film Transistors”. IEEE Transactions on Electron Devices,59(5), 1488–1493 (2012).

[47] J. Hwang and J. Phillips. “Band Structure of Strain-Balanced GaAsBi/GaAsN Superlatticeson GaAs”. Phys. Rev. B, 83(19), 195,327 (2011).

[48] A. Itsuno, J. D. Phillips, and S. Velicu. “Design and modeling of HgCdTe n-B-n detectors”.Journal of Electronic Materials, 40(8), 1624–1629 (2011).

[49] A. M. Itsuno, J. D. Phillips, and S. Velicu. “Predicted performance improvement of Auger-suppressed HgCdTe photodiodes and p-n heterojunction detectors”. IEEE Transactions onElectron Devices, 58(2), 501–507 (2011).

[50] J. Siddiqui, J. Phillips, B. Bayraktaroglu, and K. Leedy. “Electronic properties of interfacestates in HfO2/ZnO thin films”. IEEE Electron Device Letters, 32(12), 1713–1715 (2011).

[51] W. Wang, J. D. Phillips, S. J. Kim, and X. Pan. “ZnO/ZnSe/ZnTe Heterojunctions forZnTe-Based Solar Cells”. Journal of Electronic Materials, 40(8), 1674–1678 (2011).

[52] W. Weiming, Y. Jun, Z. Xin, and J. Phillips. “Intermediate-band solar cells based on dilutealloys and quantum dots”. Frontiers of Optoelectronics in China, 4, 2–11 (2011).

[53] A. M. Itsuno, P. Y. Emelie, J. D. Phillips, S. Velicu, C. H. Grein, and P. Wijewarnasuriya.“Arsenic diffusion study in HgCdTe for low p-type doping in Auger suppressed photodiodes”.Journal of Electronic Materials, 39(7), 945–950 (2010).

[54] S. Velicu, C. H. Grein, P. Y. Emelie, A. Itsuno, J. D. Phillips, and P. Wijewarnasuriya. “MWIRand LWIR HgCdTe Infrared Detectors Operated with Reduced Cooling Requirements”. Journalof Electronic Materials, 39(7), 873–881 (2010).

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[55] W. E. Bowen, W. Wang, and J. D. Phillips. “Complementary Thin-Film Electronics Basedon n-channel ZnO and p-channel ZnTe”. IEEE Electron Device Letters, 30(12), 1314–1316(2009).

[56] P. Y. Emelie, J. D. Phillips, S. Velicu, and P. Wijewarnasuriya. “Parameter extraction ofHgCdTe infrared photodiodes exhibiting Auger supression”. J. Phys. D, 42, 234,003 (2009).

[57] A. Lin and J. Phillips. “Drift-Diffusion Model for Intermediate-Band Solar Cell”. IEEETransactions on Electron Devices, 56(12), 3168–3174 (2009).

[58] A. Lin and J. Phillips. “Model for Intermediate Band Solar Cells Incorporating Carrier Trans-port and Recombination and Application to ZnTeO”. Journal of Applied Physics, 105, 064,512(2009).

[59] W. Wang, W. Bowen, S. Lin, S. Spanninga, and J. Phillips. “Optical Characteristics of ZnTeOThin Films Synthesized by Pulsed Laser Deposition and Molecular Beam Epitaxy”. Journalof Electronic Materials, 38(1), 119–125 (2009).

[60] W. Wang, A. Lin, and J. Phillips. “Intermediate-Band Photovoltaic Solar Cell Based onZnTe:O”. Applied Physics Letters, 95, 011,103 (2009).

[61] W. Wang, A. Lin, J. D. Phillips, and W. Metzger. “Generation and recombination rates atZnTe:O intermediate band states”. Applied Physics Letters, 95, 261,107 (2009).

[62] X. Zhu, V. Lee, J. Phillips, and A. Mortazawi. “An Intrinsically Switchable FBAR Filter Basedon Barium Titanate Thin Films”. IEEE Microwave and Wireless Component Letters, 19(6),359–361 (2009).

[63] W. Bowen, W. Wang, E. Cagin, and J. D. Phillips. “Quantum confinement and carrierlocalization effects in ZnO/MgxZn1-xO Wells”. Journal of Electronic Materials, 37(5), 749–754 (2008).

[64] E. Cagin, J. Yang, W. Wang, J. D. Phillips, S. K. Hong, J. W. Lee, and J. Y. Lee. “Growthand structural properties of m-plane ZnO on MgO (001) by molecular beam epitaxy”. AppliedPhysics Letters, 92, 233,505 (2008).

[65] P. Y. Emelie, S. Velicu, C. H. Grein, J. D. Phillips, P. Wijewarnasuriya, and N. K. Dhar.“Modeling of LWIR HgCdTe Auger-Suppressed Infrared Photodiodes Under Non-EquilibriumOperation”. Journal of Electronic Materials, 37(9), 1362–1368 (2008).

[66] A. Lin and J. Phillips. “Optimization of random diffraction gratings in thin film solar cellsusing genetic algorithms”. Solar Energy Materials and Solar Cells, 92, 1689–1696 (2008).

[67] W. Wang, S. Lin, and J. Phillips. “Electrical characteristics and photoresponse of ZnO/ZnTeheterojunction diodes”. Journal of Electronic Materials, 37(8), 1044–1048 (2008).

[68] E. Cagin, D. Chen, J. Siddiqui, and J. D. Phillips. “Hysteretic Metal-Ferroelectric-Semiconductor Capacitors Based on PZT/ZnO Heterostructures”. J. Phys. D, 40, 2430–2434(2007).

[69] P. Y. Emelie, J. D. Phillips, C. Fulk, J. Garland, and S. Sivananthan. “Electrical Characteristicsof PEDOT:PSS Organic Contacts to HgCdTe”. J. Electron. Mater., 36(8), 841–845 (2007).

[70] P. Y. Emelie, J. D. Phillips, S. Velicu, and C. H. Grein. “Modeling and Design Considerationsof HgCdTe Infrared Detectors Under Non-Equilibrium Operation”. J. Electron. Mater., 36(8),846–851 (2007).

[71] J. S. Fu, X. A. Zhu, J. D. Phillips, and A. Mortazawi. “Improving Linearity of Ferroelectric-Based Microwave Tunable Circuits”. IEEE Trans. Microwave Theory and Techniques, 55(2),354–360 (2007).

[72] D. Chen and J. D. Phillips. “Analysis and design optimization of electrooptic interferometricmodulators for microphotonics applications”. IEEE J. Lightwave Technology, 24(6), 2340–2346 (2006).

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[73] D. Chen and J. D. Phillips. “Electric field dependence of piezoelectric coefficient in ferroelec-tric thin films”. J. Electroceramics, 17, 613–617 (2006).

[74] P. Y. Emelie, J. D. Phillips, B. Buller, and U. D. Venkateswaran. “Free carrier absorptionand lattice vibrational modes in bulk ZnO”. Journal of Electronic Materials, 35(4), 525–529(2006).

[75] K. Moazzami, T. E. Murphy, J. D. Phillips, M. Cheung, and A. N. Cartwright. “Sub-bandgapphotoconductivity in ZnO epilayers and extraction of trap density spectra”. Semicond. Sci.Technol., 21, 717–723 (2006).

[76] T. E. Murphy, K. Moazzami, and J. D. Phillips. “Trap related photoconductivity in ZnOepilayers”. Journal of Electronic Materials, 35(4), 543–549 (2006).

[77] J. Siddiqui, E. Cagin, D. Chen, and J. D. Phillips. “ZnO Thin Film Transistors with Poly-crystalline (Ba,Sr)TiO3 Gate Insulators”. Appl. Phys. Lett., 88, 212,903 (2006).

[78] D. Chen, T. E. Murphy, and J. D. Phillips. “Properties Of Ferroelectric Pb(Zr,Ti)O3 ThinFilms On ZnO/Al2O3 (0001) Epilayers”. Thin Solid Films, 491, 301–304 (2005).

[79] D. Chen and J. D. Phillips. “Extraction of Electro-Optic Coefficient in Thin-Film Lin-ear Electro-Optic Mach-Zehnder Interferometers with Non-Periodic Intensity-Voltage OutputCharacteristics”. Optical Engineering, 44(3), 034,601 (2005).

[80] K. Moazzami, J. Phillips, D. Lee, S. Krishnamurthy, G. Benoit, Y. Fink, and T. Tiwald.“Detailed Study Of Above Bandgap Optical Absorption In MBE HgCdTe”. J. Electron.Mater., 34(6), 773–778 (2005).

[81] T. E. Murphy, J. O. Blaszczak, K. Moazzami, W. E. Bowen, and J. D. Phillips. “PropertiesOf Electrical Contacts On Bulk And Epitaxial n-Type ZnO”. J. Electron. Mater., 34(4),389–394 (2005).

[82] T. E. Murphy, D. Y. Chen, E. Cagin, and J. D. Phillips. “Electronic Properties Of ZnOEpilayers Grown On C-Plane Sapphire By Plasma-Assisted Molecular Beam Epitaxy”. J. Vac.Sci. Technol. B, 23(3), 1277–1280 (2005).

[83] T. E. Murphy, D. Y. Chen, and J. D. Phillips. “Growth And Electronic Properties Of ZnOEpilayers By Plasma-Assisted Molecular Beam Epitaxy”. J. Electron. Mater., 34(6), 699–703(2005).

[84] S. Chakrabarti, S. Fathpour, K. Moazzami, J. Phillips, Y. Lei, N. Browning, and P. Bhat-tacharya. “Pulsed Laser Annealing of Self-Organized InAs/GaAs Quantum Dots”. Journal ofElectronic Materials, 33(4), L5–8 (2004).

[85] D. Chen, T. E. Murphy, S. Chakrabarti, and J. D. Phillips. “Optical Waveguiding In Ba-TiO3/MgO/AlxOy/GaAs Heterostructures”. Applied Physics Letters, 85(22), 5206–5208(2004).

[86] K. Moazzami, J. Phillips, D. Lee, D. Edwall, M. Carmody, E. Piquette, M. Zandian, andJ. Arias. “Optical Absorption Model for MBE HgCdTe and Application to Infrared DetectorPhoto Response”. J. Electron. Mater., 33(6), 701–708 (2004).

[87] K. Moazzami, J. Phillips, D. Lee, D. Edwall, M. Carmody, E. Piquette, M. Zandian, andJ. Arias. “Optical absorption studies of HgCdTe epitaxial layers for improved infrared detectormodeling”. phys. Stat. Sol. (c), 1(4), 662–665 (2004).

[88] T. E. Murphy, D. Chen, and J. D. Phillips. “Electronic Properties Of Ferroelectric Ba-TiO3/MgO Capacitors On GaAs”. Applied Physics Letters, 85(15), 3208–3210 (2004).

[89] T. E. Murphy, S. Walavalkar, and J. D. Phillips. “Epitaxial growth and surface modeling ofZnO on c-plane Al2O3”. Applied Physics Letters, 85(26), 6338–6340 (2004).

[90] M. Carmody, D. Lee, M. Zandian, J. Phillips, and J. Arias. “Threading and Misfit-DislocationMotion in Molecular-Beam-Epitaxy-Grown HgCdTe Epilayers”. J. Electron. Mater., 32(7),710–716 (2003).

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[91] B. Kochman, A. D. Stiff-Roberts, S. Chakrabarti, J. D. Phillips, S. Krishna, J. Singh, andP. Bhattacharya. “Absorption, Carrier Lifetime, and Gain in InAs-GaAs Quantum-Dot InfraredPhotodetectors”. IEEE Journal of Quantum Electronics, 39(3), 459–467 (2003).

[92] K. Moazzami, D. Liao, J. D. Phillips, D. L. Lee, M. Carmody, M. Zandian, and D. Edwall.“Optical Absorption Properties of HgCdTe Epilayers with Uniform Composition”. J. Electron.Mater., 32(7), 646–650 (2003).

[93] J. D. Phillips, K. Moazzami, J. Kim, D. D. Edwall, D. L. Lee, and J. M. Arias. “Uniformityof optical absorption in HgCdTe epilayer measured by infrared spectromicroscopy”. AppliedPhysics Letters, 83(18), 3701–3703 (2003).

[94] K. Kim, J. Urayama, T. Norris, J. Singh, J. Phillips, and P. Bhattacharya. “Gain dynamicsand ultrafast spectral hole burning in In(Ga)As self-organized quantum dots”. Applied PhysicsLetters, 81, 670–2 (2002).

[95] S. Krishna, A. D. Stiff-Roberts, J. D. Phillips, P. Bhattacharya, and S. W. Kennerly. “Features- Hot Dot Detectors - Infrared quantum dot intersubband photodetectors are a promisingtechnology for multiwavelength IR detection”. IEEE circuits and devices, 18(1), 14 (11pages) (2002).

[96] J. Phillips. “Evaluation of the fundamental properties of quantum dot infrared detectors”.Journal of Applied Physics, 91(7), 4590–4594 (2002).

[97] J. Phillips, D. Edwall, and D. Lee. “Control Of Very-Long-Wavelength Infrared HgCdTeDetector Cutoff Wavelength”. Journal of Electronic Materials, 31(7), 664–668 (2002).

[98] B. Shin, B. Lita, R. S. Goldman, J. Phillips, and P. Bhattacharya. “Lateral indium-indium paircorrelations within the wetting layers of buried InAs/GaAs quantum dots”. Applied PhysicsLetters, 81, 1423–25 (2002).

[99] P. Wijewarnasuriya, M. Zandian, J. Phillips, D. Edwall, R. Dewames, G. Hildebrandt, J. Bajaj,J. Arias, A. D’Souza, and F. Moore. “Advances in Large-Area Hg1-xCdxTe PhotovoltaicDetectors for Remote-Sensing Applications”. Journal of Electronic Materials, 31(7), 726–31(2002).

[100] P. Bhattacharya, S. Krishna, J. Phillips, P. J. McCann, and K. Namjou. “Carrier-dynamics inself-organized quantum dots and their application to long-wavelength sources and detectors”.Journal of Crystal Growth, 227(228), 27–35 (2001).

[101] D. Edwall, J. Phillips, D. Lee, and J. Arias. “Composition control of long wavelength MBEHgCdTe using in-situ spectroscopic ellipsometry”. Journal of Electronic Materials, 30(6),643–6 (2001).

[102] J. Phillips, D. Edwall, D. Lee, and J. Arias. “Growth of HgCdTe for long-wavelength infrareddetectors using automated control from spectroscopic ellipsometry measurements”. J. Vac.Sci. Technol. B, 19(4), 1580–4 (2001).

[103] R. M. Biefeld and J. D. Phillips. “Growth of InSb on GaAs using InAlSb buffer layers”. Journalof Crystal Growth, 209(4), 567–71 (2000).

[104] R. M. Biefeld, J. D. Phillips, and S. R. Kurtz. “Exploring new active regions for type I InAsSbstrained-layer lasers”. Journal of Electronic Materials, 29(1), 91–3 (2000).

[105] R. M. Biefeld, J. D. Phillips, and S. R. Kurtz. “InAsSb/InPSb strained-layer superlatticegrowth using metal-organic chemical vapor deposition”. Journal of Crystal Growth, 211(1-4),400–4 (2000).

[106] B. Lita, R. S. Goldman, J. D. Phillips, and P. K. Bhattacharya. “Interdiffusion, segregation,and dissolution in InAs/GaAs quantum dot superlattices”. Surface Review and Letters, 7(5-6),539–45 (2000).

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[107] P. Bhattacharya, K. Kamath, J. Phillips, and D. Klotzkin. “Self-organized growth ofIn(Ga)As/GaAs quantum dots and their opto-electronic device applications”. Bulletin ofMaterials Science, 22(3), 519–29 (1999).

[108] P. Bhattacharya, K. K. Kamath, J. Singh, D. Klotzkin, J. Phillips, H. T. Jiang, N. Chervela,T. B. Norris, T. Sosnowski, J. Laskar, and M. R. Murty. “In(Ga)As/GaAs self-organizedquantum dot lasers: DC and small-signal modulation properties”. IEEE Transactions onElectron Devices, 46(5), 871–83 (1999).

[109] D. Klotzkin, J. Phillips, H. Jiang, J. Singh, and P. Bhattacharya. “Electron intersubband en-ergy level spacing in self-organized In0.4Ga0.6As/GaAs quantum dot lasers from temperature-dependent modulation measurements”. J. Vac. Sci. Technol. B, 17(3), 1276–80 (1999).

[110] K. K. Linder, J. Phillips, O. Qasaimeh, P. Bhattacharya, and J. C. Jiang. “In(Ga)As/GaAsself-organized quantum dot light emitters grown on silicon substrates”. Journal of CrystalGrowth, 201(202), 1186–9 (1999).

[111] K. K. Linder, J. Phillips, O. Qasaimeh, X. F. Liu, S. Krishna, and P. Bhattacharya. “Growthand electroluminescent properties of self-organized In0.4Ga0.6As/GaAs quantum dots grownon silicon”. J. Vac. Sci. Technol. B, 17(3), 1116–19 (1999).

[112] K. K. Linder, J. Phillips, O. Qasaimeh, X. F. Liu, S. Krishna, P. Bhattacharya, and J. C.Jiang. “Self-organized In0.4Ga0.6As quantum-dot lasers grown on Si substrates”. AppliedPhysics Letters, 74(10), 1355–7 (1999).

[113] B. Lita, R. S. Goldman, J. D. Phillips, and P. K. Bhattacharya. “Interdiffusion and surfacesegregation in stacked self-assembled InAs/GaAs quantum dots”. Applied Physics Letters,75(18), 2797–9 (1999).

[114] B. Lita, R. S. Goldman, J. D. Phillips, and P. K. Bhattacharya. “Nanometer-scale studiesof vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots”.Applied Physics Letters, 74(19), 2824–6 (1999).

[115] J. Phillips, P. Bhattacharya, S. W. Kennerly, D. W. Beekman, and M. Dutta. “Self-assembledInAs-GaAs quantum-dot intersubband detectors”. IEEE Journal of Quantum Electronics,35(6), 936–43 (1999).

[116] J. Phillips, P. Bhattacharya, and U. Venkateswaran. “Pressure-induced energy level cross-ings and narrowing of photoluminescence linewidth in self-assembled InAlAs/AlGaAs quantumdots”. Applied Physics Letters, 74(11), 1549–51 (1999).

[117] J. Phillips, K. Kamath, P. Bhattacharya, and U. Venkateswaran. “Temperature-dependentphotoluminescence of In 0.5Al0.5As/Al0.25Ga0.75As self-organized quantum dots”. Journalof Applied Physics, 85(5), 2997–9 (1999).

[118] J. D. Phillips, P. K. Bhattacharya, and U. D. Venkateswaran. “Photoluminescence studieson self-organized InAlAs/AlGaAs quantum dots under pressure”. Physica Status Solidi B,211(1), 85–9 (1999).

[119] O. Qasaimeh, W. D. Zhou, J. Phillips, S. Krishna, P. Bhattacharya, and M. Dutta. “Bistabilityand self-pulsation in quantum-dot lasers with intracavity quantum-dot saturable absorbers”.Applied Physics Letters, 74(12), 1654–6 (1999).

[120] Z. Weidong, O. Qasaimeh, J. Phillips, S. Krishna, and P. Bhattacharya. “Bias-controlled wave-length switching in coupled-cavity In0.4Ga0.6As/GaAs self-organized quantum dot lasers”.Applied Physics Letters, 74(6), 783–5 (1999).

[121] J. Phillips, K. Kamath, and P. Bhattacharya. “Far-infrared photoconductivity in self-organizedInAs quantum dots”. Applied Physics Letters, 72(16), 2020–2 (1998).

[122] J. Phillips, K. Kamath, T. Brock, and P. Bhattacharya. “Characteristics of InAs/AlGaAs self-organized quantum dot modulation doped field effect transistors”. Applied Physics Letters,72(26), 3509–11 (1998).

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[123] J. Phillips, K. Kamath, X. Zhou, N. Chervela, and P. Bhattacharya. “Intersubband absorptionand photoluminescence in Si-doped self-organized InAs/Ga(Al)As quantum dots”. J. Vac. Sci.Technol. B, 16(3), 1343–6 (1998).

[124] O. Qasaimeh, K. Kamath, P. Bhattacharya, and J. Phillips. “Linear and quadratic electro-opticcoefficients of self-organized In0.4Ga0.6As/GaAs quantum dots”. Applied Physics Letters,72(11), 1275–7 (1998).

[125] K. Kamath, P. Bhattacharya, and J. Phillips. “Room temperature luminescence from self-organized InxGa1-xAs/GaAs (0.35<x<0.45) quantum dots with high size uniformity”. Journalof Crystal Growth, 175, 175–1762 (1997).

[126] K. Kamath, J. Phillips, H. Jiang, J. Singh, and P. Bhattacharya. “Small-signal modulationand differential gain of single-mode self-organized In0.4Ga0.6As/GaAs quantum dot lasers”.Applied Physics Letters, 70(22), 2952–3 (1997).

[127] J. Phillips, K. Kamath, X. Zhou, N. Chervela, and P. Bhattacharya. “Photoluminescenceand far-infrared absorption in Si-doped self-organized InAs quantum dots”. Applied PhysicsLetters, 71(15), 2079–81 (1997).

[128] P. F. Baude, M. A. Haase, G. M. Haugen, K. K. Law, T. J. Miller, K. Smekalin, J. Phillips, andP. Bhattacharya. “Conduction band offsets in CdZnSe/ZnSSe single quantum wells measuredby deep level transient spectroscopy”. Applied Physics Letters, 68(25), 3591–3593 (1996).

[129] K. Kamath, P. Bhattacharya, T. Sosnowski, T. Norris, and J. Phillips. “Room-temperatureoperation of In0.4Ga0.6As/GaAs self-organised quantum dot lasers”. Electronics Letters,32(15), 1374–5 (1996).

[130] K. Kamath, J. Phillips, J. Singh, and P. Bhattacharya. “Large blueshift in the photolumines-cence of pseudomorphic InGaAs/GaAs quantum wells grown in patterned (100) GaAs groovesand ridges with vertical sidewalls”. J. Vac. Sci. Technol. B, 14(3), 2312–14 (1996).

[131] J. Phillips, K. Kamath, J. Singh, and P. Bhattacharya. “Adatom migration effects duringmolecular beam epitaxial growth of InGaAs/GaAs quantum wells on patterned substrates withvertical sidewalls: blue shift in luminescence spectra”. Applied Physics Letters, 68(8), 1120–2(1996).

Conference Presentations and Proceedings[1] M. Barrow and J. Phillips. “Mid-Wave Infrared Filtering via Subwavelength Dielectric Zero-

Contrast Gratings”. Electronic Materials Conference (Ann Arbor, MI, 2019).

[2] J. Easley, M. Ettenberg, C. Martin, and J. Phillips. “Prospects of InGaAs/GaAsSb Lattice-Matched to InP for Extended Range SWIR Detection”. Electronic Materials Conference (AnnArbor, MI, 2019).

[3] I. Lee, E. Moon, Y. Kim, J. Phillips, and D. Blaauw. “A 10mm3 Light-Dose Sensing IoT2System with 35-to-339nW 10-to-300klx Light-Dose-to-Digital Converter”. 2019 Symposiumon VLSI Technology (2019).

[4] H. Masten, J. Phillips, and R. Peterson. “Deep Depletion and Hole Generation in b-Ga2O3MOS Capacitors”. Electronic Materials Conference (Ann Arbor, MI USA, 2019).

[5] E. Moon, M. Barrow, I. Lee, D. Blaauw, and J. Phillips. “GaAs Dual Junction Photovoltaicmodules for Bio-implantable Devices”. Electronic Materials Conference (Ann Arbor, MI,2019).

[6] R. Peterson, M. H. Lee, H. Masten, and J. Phillips. “Interfacial defects in Ga2O3”. 30th In-ternational Conference on Defects in Semiconductors (Seattle, Washington, 2019). (Invited).

[7] M. Ahn, A. Sarracino, A. Ansari, B. Torralva, S. Yalisove, and J. Phillips. “Surface Mor-phology and Thermal Cleavages of Ultrafast Laser irradiated b-Ga2O3”. Electronic MaterialsConference (Santa Barbara, CA, 2018).

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[8] J. Easley, J. Phillips, and M. Ettenberg. “InGaAs/GaAsSb Type II Superlattices for SWIRApplications”. US Workshop on the Physics and Chemistry of II-VI Materials (Pasadena, CA,2018).

[9] I. Lee, G. Kim, E. Moon, S. Jeong, D. Kim, J. Phillips, and D. Blaauw. “179 lux EnergyAutonomous Fully Encapsulated 17-mm3 Sensor Node with Initial Charge Delay Circuit forBattery Protection”. Symposia on VLSI Technology and Circuits (2018).

[10] H. Masten, J. Phillips, and R. Peterson. “Gallium oxide MOSCAPs with low Dit usingyttrium-scandium oxide high-k dielectric”. US Workshop on Gallium Oxide (Columbus, OH,2018).

[11] H. Masten, J. Phillips, and R. Peterson. “Ternary Alloy Rare Earth Scandate as Dielectric forbeta-Ga2O3 MOS Structures”. Electronic Materials Conference (Santa Barbara, CA, 2018).

[12] E. Moon, D. Blaauw, and J. Phillips. “Monolithic Photovoltaic Modules on a Chip formm-Scale Wireless Sensor Systems”. Electronic Materials Conference (Santa Barbara, CA,2018).

[13] J. D. Phillips, C. J. Finelli, K. Najafi, and L. R. Lattuca. “WIP: Reinventing the UndergraduateEE Curriculum to Address Tomorrow’s Cross-Disciplinary Global Challenges”. ASEE AnnualConference and Exposition (Salt Lake City, UT, 2018).

[14] M. Barrow, M. Scherr, and J. Phillips. “Leaky Mode Coupling in Asymmetric SubwavelengthDielectric Gratings”. IEEE Photonics Conference (Orlando, Florida, 2017).

[15] J. Easley, E. Arkun, M. Carmody, and J. Phillips. “Carrier Transport Measurements onLow-Doped Hg1-xCdxTe”. Electronic Materials Conference (South Bend, Indiana, 2017).

[16] J. Easley, E. Arkun, M. Carmody, and J. Phillips. “Low Temperature Carrier TransportMeasurements on Low Doped Hg1-xCdxTe”. U.S. Workshop on the Physics and Chemistryof II-VI Materials (Chicago, Illinois, 2017).

[17] H. Masten, J. Phillips, and R. Peterson. “Photo-assisted capacitance-voltage characterizationof interface states in SiO2//beta-Ga2O3 (010) MOS capacitors”. International Workshop onGallium Oxide and Related Materials (Parma, Italy, 2017).

[18] E. Moon, D. Blaauw, and J. Phillips. “Photovoltaic Infrared Energy Harvesting for Bio-Implantable Devices”. Electronic Materials Conference (South Bend, Indiana, 2017).

[19] J. Phillips, M. Barrow, and M. Scherr. “Long-Wave Infrared Filtering in SubwavelengthDielectric Gratings”. IEEE Photonics Conference (Orlando, Florida, 2017). (INVITED).

[20] M. Ahn, R. Cahyadi, J. Wendorf, M. Versteeg, E. Moon, W. Bowen, B. Torralva, S. Yalisove,and J. Phillips. “Localized Room-Temperature Structural and Electronic Modifications of SiCvia Ultrafast Laser Irradiation”. Electronic Materials Conference (Newark, Delaware, 2016).

[21] R. Cahyadi, M. Ahn, J. Wendorf, Su, J. Phillips, B. Torralva, and S. Yalisove. “Can UltrafastLaser Irradiation Improve Doping of SiC?The Role of Gaseous Environment, Temperature,Fluence, and Number of Pulses on Damage Threshold and Electrical Conductivity”. MaterialsResearch Society Fall Meeting (Boston, MA, 2016).

[22] J. Easley, E. Arkun, M. Carmody, and J. Phillips. “Variable Field Hall Effect Measurementson Low Doped Hg1-xCdxTe”. U.S. Workshop on the Physics and Chemistry of II-VI Materials(Baltimore, MD, 2016).

[23] I. Lee, W. Lim, A. Teran, J. Phillips, D. Sylvester, and D. Blaauw. “A >78% Efficient LightHarvester over 100-to-100klux with Reconfigurable PV-Cell Network and MPPT Circuit”.International Solid State Circuits Conference (San Francisco, CA, 2016).

[24] E. Moon, A. Teran, I. Lee, D. Blaauw, and J. Phillips. “Low-flux Photovoltaic Harvestingfor mm-scale Wireless Sensor Systems”. Electronic Materials Conference (Newark, Delaware,2016).

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[25] M. Scherr, M. Barrow, and J. Phillips. “Narrowband Infrared Transmission Filters via Asym-metric Subwavelength Dielectric Gratings”. IEEE Photonics Conference (Waikoloa, HI, 2016).

[26] M. Dejarld, A. Teran, S. Beck, J. Phillips, and J. Millunchick. “Low Temperature III-VNanowire Growth on Metal and Oxide Substrates”. Electronic Materials Conference (Colum-bus, OH, 2015).

[27] E. Moon and J. Phillips. “Silicon Photovoltaics for Infrared Energy Harvising in mm-ScaleSystems”. Electronic Materials Conference (Columbus, OH, 2015).

[28] J. Occena, R. Field, A. Teran, T. Jen, C. Kurdak, J. Phillips, and R. S. Goldman. “ElectricalCharacterization of GaAsN and GaAsBi Single-Quantum-Well Diodes”. APS March Meeting(San Antonio, TX, 2015).

[29] A. Teran, J. Wong, W. Lim, G. Kim, Y. Lee, D. Blaauw, and J. Phillips. “AlGaAs Pho-tovoltaics for Indoor Energy Harvesting”. Electronic Materials Conference (Columbus, OH,2015).

[30] C. Chen and J. Phillips. “Optical and Structural Properties of ZnSeTeO”. Electronic MaterialsConference (Santa Barbara, CA, 2014).

[31] C. Chen, A. Teran, and J. Phillips. “Dilute II-VI-O Alloys: Band Anti-Crossing Behaviorand Application to Energy Conversion Devices”. International Workshop on ZnO and RelatedMaterials (Niagara Falls, Canada, 2014).

[32] J. Foley, S. Young, and J. Phillips. “Transmission Filters Based on Suspended Silicon HighIndex-contrast Gratings”. SPIE Photonics West (San Francisco, CA, 2014).

[33] J. Phillips. “Intermediate Band Solar Energy Conversion in ZnTeO and Type-II GaSb/GaAsQuantum Dots”. Next Generation Solar Photovoltaics Canada (Montreal, Canada, 2014).(INVITED).

[34] E. Plis, M. N. Kutty, S. Myers, S. Krishna, C. Chen, and J. D. Phillips. “Passivation of long-wave infrared InAs/GaSb superlattice detectors with epitaxially grown ZnTe”. Proc. SPIE9070, Infrared Technology and Applications XL (Baltimore, Maryland, 2014).

[35] A. Teran, M. Dejarld, J. Hwang, W. Lim, J. Wong, D. Blaauw, Y. Lee, J. Millunchick, andJ. Phillips. “Indoor Photovoltaic Energy Harvesting for mm-Scale Systems”. Device ResearchConference (Santa Barbara, CA, 2014). (INVITED).

[36] A. Teran, M. Dejarld, W. Lim, Y. Lee, D. Blaauw, J. Millunchick, and J. Phillips. “EnergyHarvesting with III-V Photovolatics for Miniature Systems”. Electronic Materials Conference(Santa Barbara, CA, 2014).

[37] C. Chen, S. Kim, X. Pan, and J. Phillips. “ZnTeO Epitaxial Layers on GaSb with OutstandingStructural Properties”. Electronic Materials Conference (South Bend, Indiana, 2013).

[38] C. Chen, A. Teran, E. Antolin, I. Ramiro, E. Lopez, E. Hernandez, I. Artacho, C. Tablero,A. Marti, A. Luque, and J. Phillips. “Intermediate Band Solar Energy Conversion in ZnTeO”.39th IEEE Photovoltaic Specialists Conference (Tampa, FL, 2013).

[39] J. Foley and J. Phillips. “Long-Wavelength Infrared Filters Based on Suspended-Silicon High-Index Contrast Gratings”. Electronic Materials Conference (South Bend, Indiana, 2013).

[40] J. Foley and J. Phillips. “Suspended Si/Air High Contrast Subwavelength Gratings for Long-Wavelength Infrared Reflectors”. SPIE Photonics West (San Francisco, California, 2013).

[41] J. Hwang, A. J. Martin, K. Lee, S. Forrest, J. Millunchick, and J. Phillips. “Preserving Voltageand Long Wavelength Photoresponse in GaSb/GaAs Quantum Dot Solar Cells”. 39th IEEEPhotovoltaic Specialists Conference (Tampa, FL, 2013).

[42] A. Teran, C. Chen, and J. Phillips. “Heterojunction n-ZnSe/p-ZnTe Solar Cells”. ElectronicMaterials Conference (South Bend, Indiana, 2013).

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[43] L. Zhou, C. Ling, D. Banerjee, H. Jia, C. Chen, and J. Phillips. “Towards the Understanding ofOxygen Placement in ZnTe:O Alloys”. Electronic Materials Conference (South Bend, Indiana,2013).

[44] E. Antolin, I. Ramiro, E. Lopez, E. Hernandez, I. Artacho, C. Tablero, A. Marti, A. Luque,C. Chen, J. Foley, and J. D. Phillips. “Intermediate band to conduction band optical absorptionin ZnTeO”. 38th IEEE Photovoltaic Specialists Conference (Austin, Texas, 2012). (INVITED).

[45] C. Chen, J. Foley, and J. Phillips. “Growth and optoelectronic properties of ZnTe with dilutenitrogen”. Electronic Materials Conference (Pennsylvania State University, 2012).

[46] C. Chen, S. Kim, X. Pan, and J. Phillips. “Dilute oxygen incorporation in ZnTe by plasma-assisted molecular beam epitaxy”. North American Conference on Molecular Beam Epitaxy(Stone Mountain Park, Georgia, 2012).

[47] J. M. Foley, J. D. Phillips, A. Itsuno, T. Das, and S. Velicu. “High index-contrast subwave-length gratings in the long-wavelength infrared”. Electronic Materials Conference (Pennsyl-vania State University, 2012).

[48] J. Hwang, A. J. Martin, E. Antolin, J. M. Millunchick, and J. Phillips. “Intermediate bandsolar energy conversion in quantum dots with type-II band alignment”. European MaterialsResearch Society Spring Meeting (Strasbourg, France, 2012).

[49] J. Hwang, A. J. Martin, A. Teran, and J. Millunchick. “Electronic and optical characteristicsof type-II GaSb/GaAs quantum dots for intermediate band solar energy conversion”. MaterialsResearch Society Fall Meeting (Boston, Massachusetts, 2012).

[50] A. M. Itsuno, J. D. Phillips, and S. Velicu. “Unipolar Barrier-Integrated HgCdTe InfraredDetectors”. Device Research Conference (Penn State University, 2012).

[51] A. Lin and J. Phillips. “Decoupling spectral overlap of intermediate band solar cells usinglow-high state filling”. 38th IEEE Photovoltaic Specialists Conference (Austin, Texas, 2012).

[52] A. J. Martin, J. Hwang, T. Saucer, G. V. Rodriguez, E. Marquis, V. Sih, J. D. Phillips,and J. Millunchick. “Analysis of the three-dimensional structure and optical and electronicproperties of type-II GaSb/GaAs quantum dots”. International Conference on the Physics ofSemiconductors (Zurich, Switzerland, 2012).

[53] J. Phillips, C. Chen, J. Hwang, A. Teran, V. Stoica, and R. Clarke. “ZnTeO Highly-Mismatched Alloys”. Materials Research Society Fall Meeting (Boston, Massachusetts, 2012).(INVITED).

[54] J. Phillips, C. Chen, W. Wang, V. Stoica, R. Clarke, E. Antolin, E. Lopez, I. Ramiro, E. Her-nandez, I. Artacho, A. Marti, and A. Luque. “Intermediate band solar energy conversion inZnTe:O”. European Materials Research Society Spring Meeting (Strasbourg, France, 2012).(INVITED).

[55] J. Siddiqui, J. Phillips, K. Leedy, and B. Bayraktaroglu. “Illumination Induced Charge Trans-port in ZnO Thin Film Transistors”. Materials Research Society Fall Meeting (Boston,Massachusetts, 2012).

[56] J. J. Siddiqui, J. D. Phillips, K. Leedy, and B. Bayraktaroglu. “Illumination Instability Analysisof ZnO Thin Film Transistors with HfO2 Gate Dielectrics”. Device Research Conference (PennState University, 2012).

[57] S. A. Sis, V. Lee, J. D. Phillips, and A. Mortazawi. “A DC voltage dependent switchableacoustically coupled BAW filter based on BST-on-silicon composite structure”. 2012 IEEEMTT-S International Microwave Symposium, IMS 2012, June 17, 2012 - June 22, 2012, IEEEMTT-S International Microwave Symposium Digest (Montreal, QC, Canada, 2012).

[58] S. A. Sis, V. Lee, J. D. Phillips, and A. Mortazawi. “Intrinsically switchable thin filmferroelectric resonators”. 2012 IEEE MTT-S International Microwave Symposium, IMS 2012,

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June 17, 2012 - June 22, 2012, IEEE MTT-S International Microwave Symposium Digest(Montreal, QC, Canada, 2012).

[59] A. Bayraktaroglu, M. Zhang, P. Bhattacharya, and J. Phillips. “Piezoresponse Force Mi-croscopy of InGaN/GaN Quantum Dots”. Electronic Materials Conference (Santa Barbara,CA, 2011).

[60] C. Chen, B. Juang, J. Hwang, S. Kim, X. Pan, and J. Phillips. “Type-II ZnTe/ZnSe Quan-tum Dots for Intermediate Band Solar Energy Conversion”. AVS 58th Annual InternationalSymposium and Exhibition (Nashville, Tennessee, 2011).

[61] J. Hwang, A. J. Martin, J. Millunchick, and J. D. Phillips. “Admittance Spectroscopy ofHole States in GaSb/GaAs Quantum Dots with Type-II Band Alignment”. Materials ResearchSociety Fall Meeting (Boston, Massachusetts, 2011).

[62] A. Itsuno, J. D. Phillips, and S. Velicu. “Experimental Progress on HgCdTe LWIR UnipolarnBn Device”. 15th International Conference on II-VI Compounds (Mayan Riviera, Mexico,2011).

[63] A. Itsuno, J. D. Phillips, and S. Velicu. “MBE Grown HgCdTe MWIR and LWIR nBn Devices”.U.S. Workshop on the Physics and Chemistry of II-VI Materials (Chicago, Illinois, 2011).

[64] B. Juang, W. Wang, and J. Phillips. “Photoluminescence and thermal carrier activation intype-II ZnTe/ZnSe quantum dots”. Electronic Materials Conference (Santa Barbara, Califor-nia, 2011).

[65] Y. Khan, Y. Zhang, M. Amin, T. K. Ng, J. Phillips, H. Bagci, and B. Ooi. “ZnO Nanorodsfor Simultaneous Light Trapping and Transparent Electrode Application in Solar Cells”. 2011IEEE Photonics Society Annual Meeting (Arlington, Virginia, 2011).

[66] M. N. Kutty, E. Plis, S. Smolev, N. Gautam, M. Naydenkov, S. Myers, R. Dawson, W. Wang,J. Phillips, and S. Krishna. “Improved Performance of Long-Wave Infrared InAs/GaSbStrained Layer Superlattices Detectors by Novel ZnTe Passivation”. Electronic MaterialsConference (Santa Barbara, CA, 2011).

[67] A. J. Martin, T. Saucer, J. Lee, J. Hwang, S. Kim, X. Pan, J. Phillips, V. Sih, and J. Mil-lunchick. “Multi-layer GaSb/GaAs Quantum Dot Structures for Photovoltaics”. MaterialsResearch Society Fall Meeting (Boston, Massachusetts, 2011).

[68] J. Siddiqui, J. Phillips, K. Leedy, and B. Bayraktaroglu. “Bias Temperature Stress Analysis ofZnO Thin Film Transistors with HfO2 Gate Dielectrics”. Device Research Conference (SantaBarbara, CA, 2011).

[69] J. Siddiqui, J. Phillips, K. Leedy, and B. Bayraktaroglu. “Bias-Temperature-Stress Studyof Oxide Thin Film Transistor Device Stability”. Materials Research Society Fall Meeting(Boston, Massachusetts, 2011).

[70] J. Siddiqui, J. Phillips, K. Leedy, and B. Bayraktaroglu. “Interface charge in ZnO/HfO2heterostructures”. Electronic Materials Conference (Santa Barbara, CA, 2011).

[71] A. Itsuno, T. Das, J. Phillips, and S. Velicu. “Beyond the HgCdTe P-N Junction: AlternativeBandgap-Engineered Detector Structures”. U.S. Workshop on the Physics and Chemistry ofII-VI Materials (New Orleans, Louisiana, 2010).

[72] J. Siddiqui, D. Nguyen, J. Phillips, K. Leedy, and B. Bayraktaroglu. “Study of CV andAdmittance Characteristics of ALD High-K dielectric ZnO Capacitors”. Electronic MaterialsConference (South Bend, Indiana, 2010).

[73] S. Velicu, C. H. Grein, P. Y. Emelie, A. Itsuno, J. D. Phillips, and P. Wijewarnasuriya. “Non-cryogenic operation of HgCdTe infrared detectors”. Quantum Sensing and NanophotonicDevices VII (San Francisco, California, 2010).

[74] W. Wang and J. Phillips. “ZnO/ZnSe/ZnTe Heterojunctions for ZnTe:O Solar Cells”. U.S.Workshop on the Physics and Chemistry of II-VI Materials (New Orleans, Louisiana, 2010).

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[75] W. Wang and J. Phillips. “ZnO/ZnTeO/ZnTe Heterojunctions for Intermediate State SolarCells”. Electronic Materials Conference (South Bend, Indiana, 2010).

[76] W. Wang and J. D. Phillips. “Intermediate Band Solar Energy Conversion in ZnTe:O andZnTe/ZnSe”. Photovoltaic Materials and Manufacturing Issues (Denver, CO, 2010).

[77] W. Bowen, W. Wang, and J. Phillips. “Complementary Thin Film Electronics Based onZnO/ZnTe”. Device Research Conference (University Park, PA, 2009).

[78] E. Cagin and J. Phillips. “ZnO/LiNbO3 Heterojunctions: A Candidate System for Multifunc-tional Oxides”. AVS Annual Symposium (San Jose, CA, 2009).

[79] A. Itsuno, P. Emelie, J. Phillips, S. Velicu, C. H. Grein, and P. Wijewarnasuriya. “ArsenicDiffusion Study in HgCdTe for Low P-Type Doping in Auger-Suppressed Photodiodes”. U.S.Workshop on the Physics and Chemistry of II-VI Materials (Chicago, IL, 2009).

[80] A. Lin, W. Wang, and J. Phillips. “Material and Device Requirements for Intermediate-BandSolar Cells”. Electronic Materials Conference (University Park, PA, 2009).

[81] J. Phillips. “Wide bandgap II-VI thin films for display electronics and solar cells”. AVS SpringSymposium, Michigan Chapter (Lansing, Michigan, 2009). (INVITED).

[82] W. Wang, A. Lin, J. Phillips, and W. Metzger. “Carrier Generation and RecombinationProcesses in ZnTeO for Intermediate Band Solar Cells”. AVS Annual Symposium (San Jose,CA, 2009).

[83] W. Wang, A. Lin, J. Phillips, and W. Metzger. “Carrier Generation and RecombinationProcesses in ZnTeO for Intermediate Band Solar Cells”. U.S. Workshop on the Physics andChemistry of II-VI Materials (Chicago, IL, 2009).

[84] X. Zhu, V. Lee, J. Phillips, and A. Mortazawi. “Switchable contour mode acoustic wave res-onators based on barium titanate thin films”. International Microwave Symposium, MicrowaveTheory and Techniques Society (Boston, MA, 2009).

[85] W. Bowen, E. Cagin, P. Emelie, and J. Phillips. “Current Saturation Characteristics of ZnOThin-Film Transistors”. U.S. Workshop on the Physics and Chemistry of II-VI Materials (LasVegas, Nevada, 2008).

[86] W. Bowen, E. Cagin, P. Emelie, and J. Phillips. “Current Saturation Characteristics ofZnO Thin-Film Transistors”. Fifth International Workshop on ZnO and Related Materials(Ypsilanti, Michigan, 2008).

[87] W. Bowen, E. Cagin, and J. Phillips. “ZnO Thin-Film Transistors for Transparent Displays”.Society for Information Display Vehicles and Photons (Dearborn, Michigan, 2008).

[88] W. Bowen, W. Wang, E. Cagin, and J. Phillips. “Zinc Oxide Thin Film Channels for ThinFilm Transistors with Large On/Off Current Ratio”. Electronic Materials Conference (SantaBarbara, California, 2008).

[89] P. Emelie, J. Phillips, S. Velicu, C. H. Grein, and P. Wijewarnasuriya. “Arsenic DiffusionStudy in HgCdTe for Low P-Type Doping in Auger-Suppressed Photodiodes”. U.S. Workshopon the Physics and Chemistry of II-VI Materials (Las Vegas, Nevada, 2008).

[90] J. Fu, X. A. Zhu, J. D. Phillips, and A. Mortazawi. “A Ferroelectric-Based Impedance Tunerfor Adaptive Matching Applications”. IEEE MTT-S International Microwave Symposium(2008).

[91] J. Phillips. “ZnTe/ZnO II-VI Solar Cells”. International Optoelectronics Symposium (Chicago,IL, 2008). (INVITED).

[92] S. Velicu, C. H. Grein, M. Carmody, P. Dreiske, D. Rafol, P. Emelie, J. Phillips, P. Wijewar-nasuriya, N. Dhar, and A. D’Souza. “HgCdTe Detectors Under Non-Equilibrium Conditionsfor Operation Under Non-Cryogenic Temperatures”. Quantum Structures for Non-CryogenicInfrared Imaging, NATO SET-137 (Las Vegas, NV, 2008).

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[93] W. Wang, S. Lin, and J. Phillips. “Intermediate-Band Solar Cells Based on ZnTeO”. U.S.Workshop on the Physics and Chemistry of II-VI Materials (2008).

[94] W. Wang, S. Lin, and J. Phillips. “Optical Absorption Properties of ZnTe:O and Applicationto Solar Cells”. Electronic Materials Conference (Santa Barbara, California, 2008).

[95] W. Bowen and J. Phillips. “Growth and Optical Characterization of ZnO/MgZnO QuantumWells”. U.S. Workshop on the Physics and Chemistry of II-VI Materials (Baltimore, Maryland,2007).

[96] W. Bowen, W. Wang, E. Cagin, and J. Phillips. “Optical and Structural Characterizationof ZnO/MgxZn1-xO Quantum Wells Synthesized by Pulsed Laser Deposition”. ElectronicMaterials Conference (South Bend, Indiana, 2007).

[97] P. Emelie, S. Velicu, C. H. Grein, J. Phillips, P. Wijewarnasuriya, and N. Dhar. “Modeling ofLWIR HgCdTe Infrared Detectors Under Non-Equilibrium Operation”. U.S. Workshop on thePhysics and Chemistry of II-VI Materials (Baltimore, Maryland, 2007).

[98] J. Phillips. “ZnO: Candidate Material for Ultra-Low Loss Optical Waveguides?” DARPAUltra-Low Loss Waveguide Workshop (Arlington, VA, 2007). (INVITED).

[99] W. Wang, W. Bowen, S. Lin, S. Spanninga, and J. Phillips. “Pulsed laser deposition ofZnOxTe1-x thin films and application to p+-Si/ZnOTe/n-ZnO heterojunction diodes”. Ma-terials Research Society Fall Meeting (Boston, Massachusetts, 2007).

[100] W. Wang, W. Bowen, and J. Phillips. “Mixed anion ZnOTe thin films by pulsed laserdeposition”. American Vacuum Society 54th International Symposium (Seattle, Washington,2007).

[101] X. Zhu, J. D. Phillips, and A. Mortazawi. “A DC Voltage Dependent Switchable Thin FilmBulk Wave Acoustic Resonator Using Ferroelectric Thin Film”. IEEE MTT-S InternationalMicrowave Symposium (Honolulu, Hawaii, 2007).

[102] E. Cagin, D. Chen, J. Siddiqui, and J. D. Phillips. “Metal-Ferroelectric-Semiconductor Ca-pacitors Based on PZT/ZnO Heterostructures”. Electronic Materials Conference (UniversityPark, PA, 2006).

[103] E. Cagin, J. Siddiqui, W. Wang, and J. Phillips. “ZnO/Ferroelectric Thin Film Heterostruc-ture Capacitors and Thin Film Transistors”. 4th International Workshop on ZnO (Giessen,Germany, 2006).

[104] E. Cagin, W. Wang, J. Yang, and J. Phillips. “Epitaxial Growth of m-Plane (10-10) WurtziteZnO on Cubic (001) MgO Substrates”. 4th International Workshop on ZnO (Giessen, Ger-many, 2006).

[105] E. Cagin, J. Yang, J. D. Phillips, and P. K. Bhattacharya. “Growth of ZnO on Cubic Substratesby Molecular Beam Epitaxy”. Electronic Materials Conference (University Park, PA, 2006).

[106] P. Y. Emelie, E. Cagin, J. Siddiqui, J. D. Phillips, C. Fulk, J. Garland, and S. Sivananthan.“Electrical Characteristics of PEDOT:PSS Organic Contacts to HgCdTe”. U.S. Workshop onthe Physics and Chemistry of II-VI Materials (Newport, CA, 2006).

[107] P. Y. Emelie, J. D. Phillips, S. Velicu, and C. H. Grein. “Modeling and Design Considerationsof HgCdTe Infrared Detectors Under Non-Equilibrium Operation”. U.S. Workshop on thePhysics and Chemistry of II-VI Materials (Newport, CA, 2006).

[108] J. S. Fu, X. Zhu, D. Chen, J. D. Phillips, and A. Mortazawi. “A Linearity ImprovementTechnique for Thin-Film Barium Strontium Titanate Capacitors”. IEEE MTT-S InternationalMicrowave Symposium (San Francisco, California, 2006).

[109] J. Phillips. “Semiconducting and ferroelectric oxide materials for optoelectronics”. Nano-Optoelectronic Workshop and Summer School of Advances in Photonics (Berkeley, CA, 2006).(INVITED).

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[110] W. Wang, E. Cagin, W. Bowen, and J. Phillips. “In-Situ Arsenic Doping of ZnO Grown onGaN/Sapphire and ZnO Substrates by Molecular Beam Epitaxy”. Materials Research SocietyFall Meeting (Boston, MA, 2006).

[111] E. Cagin, J. Siddiqui, D. Chen, S. Chua, V. Alexander, and J. Phillips. “Electrical propertiesof ferroelectric/ZnO heterojunctions”. Materials Research Society Fall Meeting (Boston,Massachusetts, 2005).

[112] D. Chen and J. Phillips. “Electric field dependence of piezoelectric coefficient in ferroelectricthin films”. International Conference on Electroceramics (Seoul, Korea, 2005).

[113] D. Chen and J. Phillips. “Hysteretic electro-optic response in ferroelectric thin films”. Proc.SPIE (2005).

[114] P. Emelie, K. Moazzami, J. Phillips, B. Buller, and U. Venkateswaran. “Infrared AbsorptionCharacteristics Of Bulk ZnO And Relationship To Electronic Properties”. 47th ElectronicMaterials Conference (Santa Barbara, California, 2005).

[115] K. Moazzami, T. Murphy, and J. Phillips. “Photoconductive Behavior of ZnO for BelowBandedge Excitation”. 47th Electronic Materials Conference (Santa Barbara, California,2005).

[116] T. Murphy and J. Phillips. “Preparing for an Academic Career Through Team Teaching as aGraduate Student”. 2005 ASEE Annual Conference and Exposition (Portland, Oregon, 2005).

[117] J. Phillips. “Epitaxial Growth and Optoelectronic Properties of ZnO”. Nano-OptoelectronicsWorkshop (University of California, Berkeley, 2005).

[118] J. Phillips and T. Murphy. “Mentoring Graduate Students In Engineering Education ThroughTeam Teaching”. 2005 ASEE Annual Conference and Exposition (Portland, Oregon, 2005).

[119] J. Siddiqui, E. Cagin, P. Shea, J. Phillips, and J. Kanicki. “Incorporation of perovskite oxidesinto gate insulator of zinc oxide TFTs”. Materials Research Society Fall Meeting (Boston,Massachusetts, 2005).

[120] X. Zhu, D. Chen, Z. Jin, J. D. Phillips, and A. Mortazawi. “Characterization of Thin FilmBST Tunable Capacitors Using A Simple Two Port Measurement Technique”. IEEE MTT-SInternational Microwave Symposium (2005).

[121] D. Beloin-St. Pierre, B. Buller, U. Venkateswaran, D. Chen, T. E. Murphy, and J. D. Phillips.“Temperature and Pressure Dependence of the Raman Modes in Barium Titanate Films”.Annual APS March Meeting 2004 (Montreal, Quebec, Canada, 2004).

[122] M. Cheung, A. N. Cartwright, T. E. Murphy, J. D. Phillips, and W. E. Bowen. “Time-resolvedspectroscopy of ZnO thin films grown by Pulsed Laser Deposition”. 2004 Materials ResearchSociety Fall Meeting (Boston, Massachussetts, 2004).

[123] K. Moazzami, T. E. Murphy, and J. D. Phillips. “Transient Properties Of ZnO/Al2O3Photoconductors”. 2004 Materials Research Society Fall Meeting (Boston, Massachussetts,2004).

[124] K. Moazzami, J. D. Phillips, D. Lee, S. Krishnamurthy, G. Benoit, and Y. Fink. “DetailedStudy Of Above Bandgap Optical Absorption In MBE HgCdTe”. U.S. Workshop on thePhysics and Chemistry of II-VI Materials (Chicago, Illinois, 2004).

[125] T. Murphy, K. Moazzami, J. Phillips, M. Cheung, and A. N. Cartwright. “Time-ResolvedOptoelectronic Properties Of ZnO Epilayers”. 3rd International Conference on ZnO andRelated Materials (Sendai, Japan, 2004).

[126] T. E. Murphy, W. E. Bowen, J. O. Blaszczak, K. Moazzami, and J. D. Phillips. “Ohmicand blocking contacts to n-type ZnO (0001) epitaxial and bulk material”. 46th ElectronicMaterials Conference (South Bend, Indiana, 2004).

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[127] T. E. Murphy, D. Chen, and J. D. Phillips. “Growth and Electronic Properties of ZnOEpilayers By Plasma-Assisted Molecular Beam Epitaxy”. U.S. Workshop on the Physics andChemistry of II-VI Materials (Chicago, Illinois, 2004).

[128] T. E. Murphy, K. Moazzami, D. Chen, and J. D. Phillips. “Electronic Properties Of ZnOEpilayers Grown On C-Plane Sapphire By Plasma-Assisted Molecular Beam Epitaxy”. NorthAmerican Conference on Molecular Beam Epitaxy (Banff, Alberta, Canada, 2004).

[129] J. D. Phillips. “Optical Properties Of HgCdTe And Relationship To Infrared Detector Appli-cations”. The 4th International Symposium on Quantum Functional Systems (Seoul, Korea,2004). (INVITED).

[130] S. Chakrabarti, K. Moazzami, S. Fathpour, P. K. Bhattacharya, J. D. Phillips, Y. Lei, andN. Browning. “Pulsed Laser Annealing of Self-Organized InAs/GaAs Quantum Dots”. 45thElectronic Materials Conference (Salt Lake City, Utah, 2003).

[131] D. Chen, T. E. Murphy, and J. D. Phillips. “Deposition Of BaTiO3 Thin Films And MgOBuffer Layers On Patterned GaAs Substrates for Integrated Optics Applications”. 2003 Ma-terials Research Society Fall Meeting (Boston, MA, 2003).

[132] K. Moazzami, J. Phillips, D. Lee, D. Edwall, M. Carmody, E. Piquette, M. Zandian, andJ. Arias. “Optical Absorption Model for MBE HgCdTe and Application to Infrared DetectorPhoto Response”. U. S. Workshop On The Physics And Chemistry Of II-VI Materials (NewOrleans, Louisiana, 2003).

[133] K. Moazzami, J. Phillips, D. Lee, D. Edwall, M. Carmody, E. Piquette, M. Zandian, andJ. Arias. “Optical Absorption Studies Of HgCdTe Epitaxial Layers For Improved InfraredDetector Modeling”. 11th International Conference on II-VI Compounds (Niagara Falls, NewYork, 2003).

[134] T. E. Murphy, D. Chen, and J. D. Phillips. “Integration of BaTiO3 Ferroelectric Thin FilmsWith GaAs for Functional Devices”. IEEE 15th Biennial University/Government/IndustryMicroelectronics Symposium (Boise, Idaho, 2003).

[135] T. E. Murphy, D. Chen, and J. D. Phillips. “Integration of BaTiO3 Ferroelectric Thin Filmswith GaAs Using MgO and AlxOy Buffer Layers”. 45th Electronic Materials Conference (SaltLake City, Utah, 2003).

[136] M. Carmody, D. Lee, M. Zandian, J. Arias, and J. Phillips. “Threading and Misfit DislocationMotion in MBE Grown HgCdTe Epi-layers”. Military Sensing Symposium Specialty Group OnMaterials (2002).

[137] M. Carmody, D. Lee, M. Zandian, J. Phillips, and J. Arias. “Misfit Dislocation FormationAnd Motion In HgCdTe Cap Layers”. U.S. Workshop On The Physics And Chemistry Of II-VIMaterials (San Diego, CA, 2002).

[138] K. Moazzami, D. Liao, J. Phillips, D. Lee, M. Carmody, M. Zandian, and D. Edwall. “OpticalAbsorption Properties Of HgCdTe Epilayers With Uniform Composition”. U.S. Workshop OnThe Physics And Chemistry Of II-VI Materials (San Diego, CA, 2002).

[139] J. Phillips. “Evaluation of Performance Limitations in Quantum Dot Infrared Detectors”.Electronic Materials Conference (Santa Barbara, CA, 2002).

[140] J. Phillips, D. Chen, Z. Zhang, and P. Pronko. “Properties of ferroelectric materials depositedon semiconductors by ultrafast pulsed laser deposition”. ONR Workshop On Ferroelectric-Semiconductor Interfaces (Kona, Hawaii, 2002).

[141] D. Edwall, J. Phillips, E. Piquette, M. Zandian, and J. Arias. “HgCdTe MBE At Rockwell”.Military Sensing Symposia Specialty Group On Infrared Materials (Tysons Corner, Virginia,2001).

[142] D. Lee, H. Sankur, R. Bailey, W. McLevige, D. Edwall, J. Phillips, J. Chow, G. Hildebrandt,and W. Tennant. “High-performance VLWIR microlensed FPAs”. Military Sensing SymposiaSpecialty Group On Infrared Materials (Tysons Corner, Virginia, 2001).

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[143] J. Phillips, D. Edwall, and D. Lee. “Control of VLWIR detector cutoff wavelength”. U.S.Workshop On The Physics And Chemistry Of II-VI Materials (Orlando, Florida, USA, 2001).

[144] J. Phillips, D. Edwall, D. Lee, and J. Arias. “Control of composition and detector cutofffor long-wavelength HgCdTe grown by molecular beam epitaxy”. Military Sensing SymposiaSpecialty Group On Infrared Materials (Tysons Corner, Virginia, 2001).

[145] P. Wijewarnasuriya, M. Zandian, J. Phillips, D. Edwall, R. DeWames, G. Hildebrandt, J. Bajaj,J. Arias, A. D’Souza, and F. Moore. “Advances in large area HgCdTe photovoltaic detectorsfor remote sensing applications”. SPIE International Symposium on Optical Science andTechnology (San Diego, California, 2001).

[146] P. Wijewarnasuriya, M. Zandian, J. Phillips, D. Edwall, G. Hildebrandt, J. Bajaj, J. Arias,A. D’Souza, and F. Moore. “Advances in larger area HgCdTe photovoltaic detectors for remotesensing applications”. U.S. Workshop On The Physics And Chemistry Of II-VI Materials(Orlando, Florida, 2001).

[147] P. Bhattacharya, S. Krishna, J. Phillips, P. J. McCann, and K. Namjou. “Carrier dynamicsin self-organized quantum dots and their applications to long-wavelength sources and detec-tors”. XIth International Conference on Molecular Beam Epitaxy (Beijing, China, 2000).(INVITED).

[148] P. Bhattacharya, S. Krishna, J. D. Phillips, D. Klotzkin, and P. J. McCann. “Quantumdot carrier dynamics and far-infrared devices”. Photonics Taiwan (Taipei, Taiwan, 2000).(INVITED).

[149] P. Bhattacharya, S. Krishna, D. Zhu, J. Phillips, D. Klotzkin, O. Qasaimeh, W. Zhou,J. Singh, P. J. McCann, and K. Namjou. “Optoelectronic device applications of self-organizedIn(Ga,Al)As/Ga(Al)As quantum dots”. Materials Research Society Spring Meeting (2000).(INVITED).

[150] D. Edwall, J. Phillips, D. Lee, and J. Arias. “Composition control of long wavelengthMBE HgCdTe using in situ spectroscopic ellipsometry”. U.S. Workshop on the Physicsand Chemistry of II-VI Materials (Albuquerque, New Mexico, 2000).

[151] J. Phillips, D. Edwall, D. Lee, and J. Arias. “Growth of HgCdTe for long-wavelength infrareddetectors using automated control from spectroscopic ellipsometry measurements”. 19thNorth American Conference On Molecular Beam Epitaxy (Tempe, Arizona, 2000).

[152] P. Bhattacharya, J. Phillips, S. Krishna, O. Qasaimeh, and W. Zhou. “Carrier dynamics andultrafast photonic device application of self-organized quantum dots”. Femtosecond Scienceand Technology Conference (Chiba, Japan, 1999). (INVITED).

[153] R. M. Biefeld, S. R. Kurtz, and J. Phillips. “Exploring New Active Regions for Type I InAsSbStrained-Layer Lasers”. 9th Biennial Workshop On Organometallic Vapor Phase Epitaxy(Ponte Vedra Beach, Florida, 1999).

[154] R. M. Biefeld, J. Phillips, and S. R. Kurtz. “InAsSb/InPSb Strained-Layer SuperlatticeGrowth Using Metal-Organic Chemical Vapor Deposition”. 11th American Conference OnCrystal Growth and Epitaxy (Tucson, Arizona, 1999).

[155] R. M. Biefeld and J. D. Phillips. “Growth of InSb on GaAs substrates using InAlSb buffersfor magnetic field sensor applications”. Materials Research Society Fall Meeting, edited byM. O. Manasreh, B. J. H. Stadler, I. Ferguson, and Y. H. Zhang (Boston, Massachussetts,1999). (INVITED).

[156] R. M. Biefeld, J. D. Phillips, and S. R. Kurtz. “The growth of InAsSb/InAs/InPSb/InAs mid-infrared emitters by metal-organic chemical vapor deposition”. Materials Research SocietyFall Meeting, edited by M. O. Manasreh, B. J. H. Stadler, I. Ferguson, and Y. H. Zhang(Boston, Massachussetts, 1999).

[157] S. Krishna, J. Phillips, P. Bhattacharya, and S. Kennerly. “Self-organized quantum dotintersubband detectors: Carrier dynamics and performance characteristics”. Gordon Research

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Conference on Thin films and crystal growth mechanisms (Plymouth, New Hampshire, 1999).(INVITED).

[158] J. Phillips, D. Klotzkin, O. Qasaimeh, W. Zhou, and P. Bhattacharya. “High-speed modula-tion of quantum-dot lasers”. IEEE/LEOS Summer Topical Meeting (San Diego, California,1999). (INVITED).

[159] P. Bhattacharya, K. Kamath, J. Phillips, and D. Klotzkin. “Self-organized growth ofIn(Ga)As/GaAs quantum dots and their device applications”. International Electron Devicesand Materials Symposium (Taiwan, 1998).

[160] P. Bhattacharya, K. Kamath, J. Phillips, and D. Klotzkin. “Self-organized growth ofIn(Ga)As/GaAs quantum dots and their opto-electronic device applications”. InternationalUnion of Materials Research Societies Conference (Bangalore, India, 1998).

[161] P. K. Bhattacharya, Z. Xiangkun, K. Kamath, D. Klotzkin, J. Phillips, C. Caneau, and R. Bhat.“High-speed quantum well and quantum dot lasers”. Proceedings of the SPIE The Interna-tional Society for Optical Engineering, 3547, 350–60 (1998).

[162] D. Klotzkin, J. Phillips, H. Jiang, J. Singh, and P. Bhattacharya. “Electron intersubband en-ergy level spacing in self-organized In0.4Ga0.6As/GaAs quantum dot lasers from temperature-dependent modulation measurements”. 17th North American Conference on Molecular BeamEpitaxy (State College, Pennsylvania, 1998).

[163] K. K. Linder, J. Phillips, S. Krishna, Z. Mouffak, and P. Bhattacharya. “Growth and electro-luminescent properties of self-organized In0.4Ga0.6As/GaAs quantum dots grown on silicon”.17th North American Conference on Molecular Beam Epitaxy (State College, Pennsylvania,1998).

[164] K. K. Linder, J. Phillips, S. Krishna, O. Qasaimeh, and P. Bhattacharya. “Growth and prop-erties of self-organized In/sub 0.4/Ga/sub 0.6/As-GaAs quantum dot light emitting diodeson silicon substrates”. IEEE LEOS Annual Meeting (Orlando, Florida, 1998).

[165] K. K. Linder, J. Phillips, O. Qasaimeh, and P. Bhattacharya. “In(Ga)As/GaAs self-organizedquantum dot light emitters grown on silicon substrates”. Tenth International Conference onMolecular Beam Epitaxy (Cannes, France, 1998).

[166] B. Lita, R. S. Goldman, J. Phillips, and P. Bhattacharya. “Nanometer-scale studies of verticalorganization and evolution of stacked self-assembled InAs/GaAs quantum dots”. MaterialsResearch Society Fall Meeting (Boston, Massachussetts, 1998).

[167] J. Phillips, P. Bhattacharya, and D. Klotzkin. “Self-assembled In(Ga)As/Ga(Al)As quantumdots: High speed lasers and novel quantum dot detectors and transistors”. SemiconductorScience And Technology Conference (La Jolla, California, 1998). (INVITED).

[168] J. Phillips, K. Kamath, and P. Bhattacharya. “InAs/GaAs self-organized quantum dot far-infrared detectors”. Conference On Lasers And Electro-Optics (San Francisco, California,1998).

[169] J. Phillips, K. Kamath, K. T. Brock, and P. Bhattacharya. “Room temperature self-organizedquantum dot transistors”. Device Research Conference (Charlottesville, Virginia, 1998).

[170] J. D. Phillips, P. K. Bhattacharya, and U. D. Venkateswaran. “Photoluminescence studies onself-organized InAlAs/AlGaAs quantum dots under pressure”. Eighth International Conferenceon High Pressure Semiconductor Physics (Thessaloniki, Greece, 1998).

[171] K. Kamath, H. Jiang, D. Klotzkin, J. Phillips, T. Sosnowski, T. Norris, J. Singh, and P. Bhat-tacharya. “Strain tensor, electronic spectra and carrier dynamics in In(Ga)As/GaAs self-assembled quantum dots”. IEEE International Symposium on Compound Semiconductors,edited by M. Melloch and M. A. Reed (Santa Barbara, California, 1997).

[172] D. Klotzkin, K. Kamath, T. Sosnowksi, J. Phillips, T. Norris, and P. Bhattacharya. “Mod-ulation properties and the phonon bottleneck in self-organized single and multilayer In/sub

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0.4/Ga/sub 0.6/As/GaAs quantum dot room temperature lasers”. IEEE Cornell UniversityConference (Ithaca, New York, 1997).

[173] J. Phillips, K. Kamath, X. Zhou, N. Chervela, and P. Bhattacharya. “Intersubband absorptionand photoluminescence in Si-doped self-organized InAs/Ga(Al)As quantum dots”. 16th NorthAmerican Conference on Molecular Beam Epitaxy (Ann Arbor, Michigan, 1997).

[174] K. Kamath, J. Phillips, T. Sosnovski, X. Zhang, T. Norris, and P. Bhattacharya. “Roomtemperature operation of MBE self-organized InGaAs quantum dot lasers”. IEEE InternationalSemiconductor Laser Conference (Haifa, Israel, 1996).

[175] J. Phillips, K. Kamath, T. Sosnowski, T. Norris, and P. Bhattacharya. “Room temperatureluminescence and 1 mu m junction laser operation of In/sub x/Ga/sub 1-x/As/GaAs quantumdot lasers”. IEEE LEOS Annual Meeting (Boston, Massachussets, 1996).

[176] K. Kamath, J. Phillips, J. Singh, and P. Bhattacharya. “Large blueshift in the photolumines-cence of pseudomorphic InGaAs/GaAs quantum wells grown in patterned (100) GaAs groovesand ridges with vertical sidewalls”. 15th North American Conference on Molecular BeamEpitaxy (College Park, Maryland, 1995).

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