9th international photovoltaic science and engineering … · 2007. 3. 16. · kyocera corp. site...

TECHNICAL DIGEST

9th International Photovoltaic Science and EngineeringConference

Nov. 11-15/1996

MIYAZAKI, JAPANSEAGAIA Convention Complex

World Convention Center Summit

Organized by9th International PVSEC Organizing Committee

Sponsored byThe Japan Society of Applied PhysicsThe Institute of Electrical Engineers of JapanNagoya Industrial Science Research Institute

Co-sponsored byCommission of EC, Photovoltaic DivisionThe Chemical Society of JapanThe Electrochemical Society of JapanThe Institute of Electrical and Electronics Engineers, Inc., U.S.A.The Institute of Electronics, Information and Communication EngineersThe Japan Society for Aeronautical and Space SciencesJapanese Section of International Solar Energy SocietyJapan Solar Energy Society

Supported byAgency of Industrial Science and TechnologyJapan Automobile Manufacturers Association, Inc.Japan Photovoltaic Energy AssociationKyushu Bureau of International Trade and IndustryNational Space Development Agency of JapanNew Energy and Industrial Technology Development Organization (NEDO)New Energy Foundation (NEF)Miyazaki Chamber of CommerceMiyazaki CityMiyazaki PrefectureOptoelectronic Industry and Technology Development AssociationPhotovoltaic Power Generation Technology Research AssociationScience Council of JapanSolar System Development AssociationTakachiho-choThe Federation of Electric Power CompaniesThe Japan Electrical Manufacturers' Association

Program & Contents

Chairman's Message,

Foreword „...___

Awards . . . . . . . . . • . • • . • • • . . . • . . . . . .

. Makoto Konagai

— Tadashi Saitoh

International PVSEC-9 Committees

Acknowledgement ._.„.„...„....„._.„

Timetable ~..~»

Monday, 9:00-10:00

iii

v

vii

xi

.. xiii

- xiv

Tenzui

Tuesday, 11:15-12:35 Tenran

OPENING CEREMONY

Chairpersons : M. Prince T. SaitohTokyo Univ. ofAgri. and Tech

Opening RemarksM. Konagai, General Chairperson

Tokyo Inst. of Technology

Welcome Address

PVSEC Award PresentationM. Yamaguchi, Chairperson of Award Committee

Toyota Technological Inst.

PVSEC Award AddressY. Hamakawa

Ritsumeikan University

Tuesday, 10:00-11:00 Tenzui

OPENING SESSION

Chairpersons : M. Prince T. SaitohTokyo Univ. ofAgri. and Tech

OS-1 Japanese Policy for Introduction of RenewableInvited Energy Toward the Century of New Energy : the(10:00) Japanese Effort 1

Y. AdachiAIST, MTTI, Japan

OS-2 The Role of the Federal Government inInvited Technology Development.................... „._.. 3(10:20) J. Rannels

DOE, USA

OS-3 Industrial Development and Market PromotionInvited of Photovoltaics in Europe................. ...... 7(10:40) W. Palz

EU, Belgium

- - - Coffee Break - - -

Session A-I National Project -1

Chairpersons : C. ChungYonsei Univ.

S. WakamatsuPVTEC

A-I-lInvited(11:15)

A-I-2Invited(11:35)

A-I-3Invited(11:55)

A-I-4Invited(12:15)

The Progress of R&D on PV Technology in the"New Sunshine Program" ._.__._. _.__._._«._.- 11K. MiyazawaAIST, MITI, Japan

Status & Perspective of Photovoltaics in Korea

J. SongKorea Inst. of Energy Research, Korea

Market promotes R&D of PV in China ...P. YuTianjin Inst. of Power Sources, P.R.China

.15

19

Photovoltaic Applications in Thailand : TwentyYears of Planning and Experiences . 23K. KirtikaraKing Mongkut's Inst. of Tech. Thonburi, Thailand


Session A-II National Project - II

Chairpersons : R. KishoreNational PhysicalLab.

M. TakahashiShikoku Res. Inst.

A-II-1(14:00)

A-II-2Invited(14:15)

A-II-3Invited(14:35)

Flat-Plate Solar Array (FSA) ProjectImportant Technology Transfer Success ......W.T. CallaghanCalifornia Inst. of Tech., USA

An»27

The Photovoltaic Programme in India; anOverview 29E.V.R. SastryMinistry of Non-Coven. Energy Sources, India

Research and Development Programs inIndonesia ._......._.„_..................................................... 33W.W. Wenas, M. BarmawiInstitute Tech. of Bandung, Indonesia

A-II-4 Withdrawn

A-II-5 Long Term Evaluation of New TechnologyInvited Photovoltaic Modules ._.-~~_._ _...~~._ 41(14:55) B. Hawkins, I.J. Muirhead

Telstra Research Labs., Australia

xv

A-II-6 The New PV-Programme in the Netherlands(15:15) "The Success of Technology and Market

Clusters" - — 45J.T.N. Kimman, E.W. ter Horst, L.A. Verhoef,E.H. LysenNOVEM, The Netherlands


Tuesday, 11:15-12:35 Tengyoku


Session A-III PV Modules and BOS Components

Chairpersons

A-III-1(16:05)

A-III-2(16:20)

A-III-3(16:35)

A-III-4(16:50)

A-III-5(17:05)

A-III-6(17:20)

A-III-7(17:35)

A-III-8(17:50)

C. VerhoeveEnergieonderzoekCentrumNetherlands

T. KichimiKyocera Corp.

Site Dependence of the Energy Collection of PVModules 47K. BucherFraunhofer-Inst. for Solar Energy Systems,Germany

An Evaluation on the Life Cycle of PhotovoltaicEnergy System Considering Production Energyof Off-Grade Silicon 49K. Kato, A. Murata, K. SakutaElectrotechnical Lab., Japan

Improvement of Performance in Redox FlowBatteries for PV Systems 51I. Tsuda, K. Nozaki, K. Sakuta, K. Kurokawa*Electrotechnical Lab., Japan•Tokyo Univ. of Agri. and Tech., Japan

Integrated Circuits Offer Ideal Protection ofAccumulators - 53P. Adelmann, S. Uhlmann*Steca GmbH, Germany•Uhlmann GmbH, Germany

Application of Photovoltaics to Para RubberPlantation in Thailand 55D. Kruangam, B. Ratwises, S. Thainoi,S. PanyakeowChulalongkorn Univ., Thailand

Smart Array Power Controllers: New DC PVSystem Design Element 57B.E. O'MaraUniv. of New South Wales, Australia

A New Protective Method for Grid ConnectedDispersed PV Systems to Detect Short CircuitFault in Distribution Line 59H. Kobayashi, K. TakigawaCentral Research Inst. of Electric Power Ind., Japan

A Photovoltaic System with Power FactorCorrection and UJ*.S Facility UtilizingDSP56001 61S. Kim, G. Yu*, J. Song*Kongju National Univ., Korea•Korea Inst. of Energy and Resources, Korea

Session B-I High-Efficiency Single-Si Solar Cells andApplications

Chairpersons S. PanyakeowChulalongkornUniv.

S. MuramatsuHitachi, Ltd.

B-I-l(11:15)

B-I-2(11:30)

Single Crystalline Silicon Solar Cell with pp+

Heterojunction of c-Si Substrate and uc-Si:HFilm 63M. Nishida, D. Shindo, Y. Komatsu, S. Okamoto,M. Kaneiwa, T. NammoriSharp Corp., Japan

Pilot Production of High Efficiency PERLSilicon Solar Cells for the World SolarChallenge Solar Car Race 65J. Zhao, A. Wang, D.M. Roche, S.R. Wenham,M.A. GreenUniv. ofNew South Wales, Australia

B-I-3(11:45)

B-I-4Invited(12:00)

B-I-5(12:20)

Solar Cells(MESC).

with Mesh Structured Emitter67

S.W. Glunz, W. WettlingFraunhofer-Inst. for Solar Energy Systems,Germany

Integrated High-Concentration PV; Near-TermAlternative for Low Cost Large-Scale SolarElectric Power 69V. Garboushian, D. Roubideaux, S. YoonAmonix, Inc., USA

Thermal Process Optimization by Bulk LifetimeMonitoring and Fabrication of High-Efficiencyc-Si Solar Cells 73T. Uematsu, S. Muramatsu, K. Tsutsui, H. Ohtsuka,Y. Nagata*, M, Sakamoto**, T. WarabisakoHitachi, Ltd., Japan•Hitachi Device Eng. Co. Ltd., Japan••Hitachi ULSI Eng. Co. Ltd., Japan

Tuesday, 14:00-18:10 Tengyoku

Session B-II Symposium B"Perspectives of High-Efficiency Poly-SiSolar Cells"

Chairpersons : R.MertensIMEC

A. RohatgiGeorgia Inst. ofTech.

H. WatanabeKyocera Corp.

K. KanekoSumitomo SiTiXCorp.

B-II-1 Recent Progress in Electromagnetic Casting forInvited Polycrystalline Silicon Ingots 75(14:00) R. Kawamura, K. Sasatani, T. Onizuka, K. Kaneko

Sumitomo SiTiX Corp., Japan

B-II-2 Production of Low Cost Si Sheets by Continuous(14:20) Casting Method 79

T. Moritani, Y. Hatanaka, I. HideDaido Hoxan Inc., Japan

xvi

B-II-3(14:35)

B-II-4(14:50)

B-II-5Invited(15:05)



B-II-8(16:20)


B-II-10(16:55)

B-II-11(17:10)

Crucible-Free Continuous Growth ofMulticrystalline Silicon Ingots Applying Opticaland RF Heating 81A. Eyer, F. Haas, A. Rauber, H. Riemann^,H. Schilling^Fraunhofer-Inst. for Solar Energy Systems,Germany*Institut fllrKristallztlchtung, Germany

Thin Silicon String Ribbon 83R.L. Wallace, J.I. Hanoka, A. Rohatgi*, G. Crotty*Evergreen Solar, Inc., USA•Georgia Inst. of Tech., USA

Design, Fabrication, and Analysis of Greaterthan 18% Efficient Multicrystalline SiliconCells 85A. Rohatgi, S. NarasimhaGeorgia Inst. of Tech., USA

Overview of Solar Cell Technologies and Resultson Multicrystalline Silicon Substrates 89J. Nijs, S. Sivoththaman, J. Szlufcik, K.D. Clercq,F. Duerinckx, E.V. Kerschaever, R. Einhaus,J. Poortmans, T. Vermeulen, R. MertensIMEC, Belgium

Surface and Bulk Passivated Large AreaMulticrystalline Silicon Solar Cells 93

B-II-12(17:25)

K. Fukui, K. Okada, Y. Inomata, H. Takahashi,S. Fujii, Y. Fukawa, K. ShirasawaKyocera Corp., Japan


Towards High EfficiencySilicon Solar Cells

Multicrystalline97

R. Schindler, H. Lautenschlager, F. Lutz,C. Schetter, W. WettlingFraunhofer-Inst. for Solar Energy Systems,Germany

Development of Low Cost ProductionTechnologies for Polycrystalline Silicon SolarCells 99T. Machida, A. Miyazawa, Y. Yokosawa,H. Nakaya, S. Tanaka, T. Nunoi, H. Kumada,M. Murakami, T. TomitaSharp Corp., Japan

Stability andin Different

103

An Experimental Study onCharacteristics of HydrogenMulticrystalline Silicon MaterialH.E.A. ElgameL J. Poortmans^,R. Mertens^, P. Fa th" , M. Goetz+

Cairo Univ., Egypt•IMEC, Belgium••Univ. ofKonstanz, Germany^Univ. of Neuchatel, Switzerland

Effect of Texture on Efficiency and Yield ofMulti-Crystalline Silicon Solar Cells andModules 105R.A. Steeman, J.A. Eikelboom, W.C. Sinke,P-P. Michiels, B. van Straaten^,R.J.C. van Zolingen4

Netherlands Energy Research Foundation ECN,The Netherlands•R&S Renew. Energy Systems, The Netherlands

Progress in a Novel High ThroughputMechanical Texturization Technology for HighlyEfficient Multicrystalline Silicon Solar Cells

107

B-II-13(17:40)

B-II-14(17:55)

P. Fath, C. Borst, C. Zechner, E. Bucher, G. Willeke,S. Narayanan4

Univ. ofKonstanz, Germany•Solarex Corp., USA

Surface Texturing of Large AreaMulticrystalline Silicon Solar Cells UsingReactive Ion Etching Method ~ 109Y. Inomata, K. Fukui, K. ShirasawaKyocera Corp., Japan

Self-Aligned Selective Emitter Plasma-Etchbackand Passivation Process for Screen-PrintedSilicon Solar Cells 111D.S. Ruby, C.B. Fleddermann*, M. Roy**,S.Narayanan**Sandia National Labs., USA•Univ. of New Mexico, USA••Solarex Corp., USA

Tuesday, 11:15-12:30 Tenyo

Session C-I CdTe Thin Film Solar Cells

Chairpersons R.C. PowelSolar Cells, Inc.

A. YamadaTokyo Inst. of Tech.

C-I-l 15.1 % Highly Efficient Thin Film CdS/CdTe(11:15) Solar Cell 113

S. Kumazawa, S. Shibutani, T. Nishino,T. Aramoto, H. Higuchi, T. Arita, A. Hanafusa,K. Omura, M. Murozono, H. Takakura*Matsushita Battery Ind. Co., Ltd., Japan•Ritsumeikan Univ., Japan

C-I-2 Interfacial Mixed-Crystal Layer in CdS/CdTe(11:30) Heterostructure Elucidated by Electroref lectance

Spectroscopy ™_._™_._™~.™.».-._._.™_.™..™. 115T. Toyama, T. Yamamoto, H. OkamotoOsaka Univ., Japan

C-I-3 Development of Thin-Film CdTe PhotovoltaicsInvited 117(11:45) R.C. Powell, R.A. Sasala, G. Dorer, H. McMaster

Solar Cells, Inc., USA

C-I-4 Improving Junction Formation Procedure for(12:15) Low Temperature Deposited CdS/CdTe Solar

Cells 121T. Takamoto, T. Agui, H. Kurita, M. OhmoriJapan Energy Corp., Japan

xvn

Tuesday, 14:00-18:00

Session C-II Symposium E"High Efficiency CIS-Based Thin FilmSolar Cells and Modules"

Tcnyo Wednesday, 8:00-9:00 Tenran

Chairpersons

C-II-0(14:00)

C-II-1Invited(14:05)




C-II-5(16:30)

C-II-6(16:50)

C-II-7(17:10)

C-II-8(17:30)

H.W. SchockUniversity ofStuttgart

T. NakadaAoyama GakuinUniv.

Introductory TalkT. NakadaAoyama Gakuin Univ., Japan

Towards Efficient CIGS Thin Film PhotovoltaicModules 123H.W. Schock, R. Herberholz, V. Nadenau,T. Walter, B. Dimmler^Univ. of Stuttgart, Germany•Center fcr Solar Energy and Hydrogen Research,Germany

Issues on the Chalcopyrite/Defect ChalcopyriteJunction Model for High EfficiencyCu(In,Ga)Sez Solar Cells 127M.A. Confreres, H. Wiesner, J. Tuttle,K. Ramanathan, R. NoufiNational Renewable Energy Lab., USA

Microstructural Characterization ofEfficiency Cu(In,Ga)Sez Solar CellsT. WadaMatsushita Electric Ind. Co., Ltd., Japan

High

- - - Coffee Break

High Efficiency CIGSCoevaporation Method ~_~L. StoltUppsala Univ., Sweden

Solar Cells by,135

Improved Compositional Flexibility forCu(In,Ga)Se2-Based Thin Film Solar Cells bySodium Control Technique ,_™-_™™_____ 139T. Nakada, H. Ohbo, M. Fukuda, A. KuniokaAoyama Gakuin Univ., Japan

Improved Performance of Cu(InGa)Sea Thin-Film Solar Cells Using Evaporated Cd-FreeBuffer Layers ™™__~™____™™. 141Y. Ohtake, T. Okamoto, A. Yamada, M Konagai,K. SaitohTokyo Inst. of Tech., Japan•Teikyo Univ. of Sci. and Tech., Japan

Fabrication of Graded Band-Gap Cu(InGa)SeiThin-Film Mini-Modules with a Zh(O3,OH)iBuffer Layer ._.-.- _™-._._~. 143K. Kushiya, I. Sugiyama, M. Tachiyuki, T. Kase,Y. Nagoya, D. Okumura, M. Sato, O. Yamase,H. TakeshitaShowa Shell Sekiyu K.K., Japan

Discussion and SummaryT. WadaMatsushita Electric Ind. Co., Ltd., Japan

Session PL-I Plenary Lecture -1

Chairpersons : M.A. Green S. KondoUniv. of New South NEDOWales

PL-I-1Invited(8:00)

PL-I-2Invited(8:20)

PL-I-3Invited(8:40)

Current Status and Perspectives of AmorphousSi Thin Film Solar Cells 145M. KonagaiTokyo Inst. of Tech., Japan

Prospects for CIS-Based149

Status andPhotovoltaics .R.R.GaySiemens Solar Ind., USA

High-Efficiency Si Solar Cell Development atFraunhofer-ISE and in Germany .-••........ 153W. WettlingFraunhofer-Inst. for Solar Energy Systems,Germany

Wednesday, 9:15-10:50 Tenran

Session A-IV System Evaluation

Chairpersons T. NordmannTNC ConsultingAG

K. KurokawaTokyo Univ. ofAgri. and Tech.

A-IV-1Invited(9:15)

A-IV-2(9:35)

The.157

PV System Measurements and MonitoringEuropean Experience •„.„..... .......... ~m-G. BlaesserJoint Research Centre, Italy

Practical Values of Various Parameters for PVSystem Design .„_.„_„ 161T. Oshiro, H. Nakamura, M Imataki, K. Sakuta^,K. Kurokawa"Japan Quality Assurance Org., Japan•Electrotechnical Lab., Japan••Tokyo Univ. of Agri. and Tech., Japan

A-IV-3(9:50)

A-FV-4(10:05)

to Utilities forof Increased

163

The Value of PhotovoltaicsMitigation of the RiskEnvironmental RegulationJ. OppenheimRenewable Energy Tech. Analysis, USA

Case Studies of Large-Scale PV SystemsDistributed around Desert Area of the World

165K. Kurokawa, T. Takashima*, T. Hirasawa**,T. Kichimi**^, T.Imura"", T.Nishioka+,H. Iitsuka^.N.Tashiro^Tokyo Univ. of Agri. and Tech., Japan•Electrotechnical Lab., Japan••Kandenko Co., Ltd., Japan•••Kyocera Corp., Japan••••Fuji Electric Co., Ltd., Japan4Tokyu Construction Co. Ltd., Japan^VTEC, Japan+++NEDO, Japan

xviii

A-IV-5 An Analysis of Time-Dependent Spatial(10:20) Distribution of Output Power from Very Many

PV Power Systems Installed on a Nation-WideScale in Japan ...... .__.......- .............—167A. Murata, K. OtaniElectrotechnical Lab., Japan

A-IV-6 Long-Term Scenarios for the Integration of(10:35) Photovoltaics into the Global Energy System

169B. SerensenRoskilde Univ., Denmark


Wednesday, 13:30-17:40 Tenran

Session A-V Symposium A"Modern Module Technologies andAdvanced Concepts"

Chairpersons

A-V-0(13:30)

A-V-lInvited(13:35)

A-V-2(13:55)

A-V-3(14:10)

A-V-4(14:25)

A-V-5(14:40)

R.G. LittleSpire Corp.

B. SorensenRoskilde Univ.

H. KobayashiCentral Res. Inst. ofElectric Power Ind.

A. KitamuraKansai ElectricPower Co., Inc.

Introductory TalkK. KurokawaTokyo Univ. of Agri. and Tech.. Japan

Photovoltaic Building and InfrastructureIntegration - the European Experience ofImprovement in Technology and Economics

171T. NordmannTNC Consulting AG, Switzerland

Technical Characteristics and Benefits of theAdvent of the Headrick Solar-Voltaic DomePower Station 175E.M. Smith, M. ArchSolar Development Cooperative, USA

Exchangeable PV Shingle 177T. Yagiura, M. Morizane, K. Murata,K. Uchihashi, S. Tsuda, S. Nakano, T. Ito^,S. Omoto^, Y. YamashhV, H. Yamakawa^,T. Fujiwara^Sanyo Electric Co., Ltd., Japan•Kubota Corp., Japan

Performance of PV Glass Curtain Wall UsingColor Solar Cells on Building 179T. Nii, S. Ide, K. Tazawa, T. Harada,N. Ishikawa^, M. Kanai^, I. Hide+, T. Ito^*,T.Nagai**, T.YoshidaShowa Shell Sekiyu K.K., Japan•Daido Hoxan Inc., Japan••Kajima Corp., Japan

Development of Photovoltaic Module Integratedwith Roofing Materials II (Heat Insulated PVRoof Panel Method) 181K. Hayashi, T. Hatsukaiwa, T. Yamawaki,K. Nishimura, Y. Matsumura, S. MizukamiKaneka Corp., Japan

A-V-6(14:55)

A-V-7(15:10)

A-V-8Invited(15:40)

A-V-9(16:00)

A-V-10(16:15)

A-V-l 1Invited(16:30)

A-V-12(16:50)

A-V-13Invited(17:05)

A-V-14(17:25)

A FlexibleApplications

PV Module for Residential_.. 183

M. Horiguchi, M. Tanda, S. Kato, Y. Watanuki,T. Yoshida, T. Hama, Y. Ichikawa, H. Sakai,N. Sakai*, J. Kurihara, O. Ishikawa^Fuji Electric Corp. R&D, Ltd., Japan•Misawa Homes Co., Ltd., Japan

Development of Photovoltaic Modules Integratedwith a Metal Curtain Wall 185M. Yoshino, T. Mori, M. Mori, M. Takahashi,S. Yoshida, K. Shirasawa4

YKK Corp., Japan•Kyocera Corp., Japan


Reliability Testing of AC-Module Inverters

C.W.G. Verhoeve, W.C. SinkeNetherlands Energy Research Foundation,The Netherlands

,187

Conceptual ConsiderationsComposed of AC Modules .

on PV Systems191

K. Kurokawa, K. Kamisako, T. ShimizuTokyo Univ. of Agri. and Tech., Japan

A Development of AC Module System forFlexible and Low Cost PV Installation 193K. Takigawa, H. KobayashiCentral Research Inst. of Electric Power Ind., Japan

Low Cost Solar Module ManufacturingR.G. Little, MJ. Nowlan, G. DarkazalliSpire Corp., USA

,195

Preparation and Properties of an ExperimentalStatic Concentrator with a New Three-Dimensional Lens for Low-Cost Modules ~~ 199K. Yoshioka, K. Nakamura, S. Goma, T. SaitohTokyo Univ. of Agri. and Tech., Japan

Recycling of PV Modules 201M. PaltersonBP Solar International, U.K.

Module Recycling for Saving Resources andManufacturing Cost ._„„..... ........... 205K. Sakuta, A. Murata, K. KatoElectrotechnical Lab., Japan

Wednesday, 9:15-10:50 Tengyoku

Session B-III Advanced Cell and Process Technologiesfor Crystalline-Si Solar Cells

Chairpersons W. WettlingFraunhofer Ins. forSolare EnergySystems

H. MatsunamiKyoto Univ.

B-III-1Invited(9:15)

Low Cost Photovoltaic Roof Tile . .207S.R. Wenham, S. Bowden, M. Dickinson,R. Largent, N. Shaw, C.B. Honsberg, M.A. Green,P.R. Smith^Univ. ofNew South Wales, Australia•Dussek Campbell Pty. Ltd., Australia

xix

B-III-2 Effect of Boron Getter ing on Minority-Carrier(9:35) Quality for FZ and CZ Si Substrates 211

N. Ohe, K. Tsutsui*, T. Warabisako*, T. SaitohTokyo Univ. of Agri. and Tech., Japan•Hitachi, Ltd., Japan

B-III-3 Control of uc-Si/c-Si Interface Layer Structure(9:50) for Surface Passivation of Si Solar Cells 213

S. Muramatsu, T. Uematsu, Y. Nagata*, H. Ohtsuka,T. WarabisakoHitachi, Ltd., Japan*Hitachi Device* Eng. Ltd., Japan

B-III-4 Recent Insight Gained on Electroless Plating of(10:05) Double Sided Buried Contact Silicon Solar

Cells 215A.U. Ebong, D.S. Kim, S.H. Lee, E.C. ChoSamsung Advanced Inst. of Tech., Korea

B-III-5 Process Development of Amorphous-(10:20) Silicon/Crystalline Silicon Solar Cells 217

F. Roca, G. Sinno, G. Di Francia, P. Prosini,G. Fameli, P. Grillo, A. Citarella, F. Pascarella,D. Delia SalaENEA - Centra Ricerche Fotovoltaiche, Italy

B-III-6 Self-Aligned Locally-Diffused Emitter (SALDE)(10:35) Silicon Solar Cell 219

J. Salami, A. Shibata, D. Meier, E. Kochka,S. Yamanaka, P. Davis, J. Easoz, T. Abe*,K. Kinoshita*Ebara Solar Inc., USA*Ebara Research Co., Japan


B-IV-4(14:15)

Wednesday, 13:30-17:15 Tengyoku

Session B-IV Thin-Film Polycrystalline Si Solar Cells- Process Technologies and Devices -

Chairpersons J.NijsIMEC

A.M. BarnettAstroPower, Inc.

T. WarabisakoHitachi, Ltd.

T. IshiharaMitsubishi ElectricCorp.

B-IV-1(13:30)

Characterization of Thin Film Silicon Formedby High-Speed Zone-Melting RecrystallizationProcess 221H. Naomoto, S. Hamamoto, A. Takami,S. Arimoto, T. IshiharaMistsubishi Electric Corp., Japan

B-IV-2(13:45)

Crystalline SiliconSolar Cells

on Glass for Thin Film.223

B-IV-3(14:00)

J.H. Werner, P. LOlgen, J. Kuhnle, R. Plieninger,M. Wolf, B. Winter, R. Brendel, R.B. BergmannMax-Planck-Institut fllr FestkOrperforschung,Germany

Impurity Doping in Polycrystalline Si Depositedon Foreign Substrates by Plasma Enhanced CVDtowards Thin Film Solar Cells 225T. Fuyuki, H. Kohara, H. MatsunamiKyoto Univ., Japan

B-IV-5(14:30)

B-IV-6(14:45)

B-IV-7(15:00)

B-IV-8(15:30)

B-IV-9(15:45)

Hot Wire CVD: A One-Step Process to ObtainThin Film Polycrystalline Silicon at a LowTemperature on Cheap Substrates .„„.____._ 227J.K. Rath, M. Galetto, C.H.M. van der Werf,K.F. Feenstra, H. Meiling, M.W.M. van Cleef,R.E.I. SchroppUtrecht Univ., The Netherlands

Study on Cat-CVD Poly-Si Films for Solar CellApplication ~««_ . ...... «~.~ _™ 229R. Iiduka, A. Heya, H. MatsumuraJapan Advanced Inst. of Sci. and Tech., Japan

Properties of Polycrystalline Silicon Thin FilmsGrown by Two-Step-̂ Growth on Glass 231Y. Miyamoto, D. He, A. Miida, I. ShimizuTokyo Inst. of Tech., Japan

Growth of Poly-Crystalline Si and SiGe Layerson Glassy Substrates from Metallic Solution

i 233M.Konuma***, G. Cristiani*, A. Gutjahr*,I. Silier*, F. Banhart**, E. Bauser**Max-Planck-Institut fllr FestkOrperforschung,Germany**Max-Planck-Institut fllr Metallforshung,Germany

— Coffee Break —

Optical Modeling of Thin Silicon Solar Cells -Implications on the Device Design — _~ 235B.L. Sopori, J. MadjdpourNational Renewable Energy Lab., USA

Silicon Thin-Film Solar Cells on InsulatingIntermediate Layers _.„.. ._„„.„____ 237

B-IV-10(16:00)

B-IV-11(16:15)

B-IV-12(16:30)

B-IV-13(16:45)

B-IV-14(17:00)

C. Hebling, S.W. Glunz, C. Schetter, J. Knobloch,A. RauberFraunhofer-Inst. for Solar Energy Systems,Germany

Quantum Efficiency Analysis of HydrogenatedThin Film Crystalline Si Solar Cells on Ribbons

239K. Said, T. Vermeulen, J. Poortmans, J. Nij sIMEC, Belgium

15.6% Efficient Polycrystalline Silicon Film™Solar Cells 241H.E.A. Elgamel, A.M. Barnett*Cairo Univ., Egypt* AstroPower Inc., USA

Poly Crystalline Silicon Solar Cells Using thePlasma Spray Method 243T. Mishima, S. Itoh, G. Matuda, M. Yamamoto,K. Yamamoto, H. Kiyama, T. YokoyamaDaido Hoxan Inc., Japan

Thickness Dependence on the Performances forBelow 10um Thin Film Poly-Si Solar CellFabricated by Low Temperature Process _— 245A. Nakajima, T. Suzuki, M. Yoshimi, K. YamamotoKaneka Corp., Japan

675-cm2 Silicon-Film™ Solar CellsD.H. Ford, A.M. Barnett, J.C. Checchi,S.R. Collins, R.B. Hall, C.L. Kendall,S.M. Lampo, J.A. RandAstroPower, Inc., USA

.247

xx

Wednesday, 9:15-11:00

Session C-III CuInSi Thin Films and Devices

Chairpersons : A. Jager-Waldau K. ItoHahn-Meitner-Inst. Shinshu Univ.

C-III-1 Growth and Characterization of CuInS2 Films(9:15) Grown by RF Ion Plating 249

K. Kondo, S. Nakamura, H. Sano, H. Hirasawa,K. Sato*Stanley Electric Co., Ltd., Japan•Tokyo Univ. of Agri. and Tech., Japan

C-III-2 Epitaxial n-Si/p-CuInSi Heterojunction Devices(9:30) 2 51

H. Metzner, Th. Hahn, Chr. Schmiga, J.-H. Bremer,D. Borchert^, W.R. Fahrner^, M. SeibtUniv. Gflttingen, Germany•Fern Univ. Hagen, Germany

C-III-3 CuInS2 Thin Films Solar Cells Fabricated by(9:45) Sulfurization of Oxide Precursors 253

T. Negami, Y. Hashimoto, M. Nishitani, T. WadaMatsushita Electric Ind. Co., Ltd., Japan

C-III-4 Properties of CuInS2 Thin Films Grown by a(10:00) Two Step Process without H2S 255

R. Klenk, Ch. Kaufinann, M. Saad, I. Hengel,V. Dieterle, U. Blieske, K. Ellmer, J. Klaer,S. Fiechter, A. Jager-Waldau, M.Ch. Lux-SteinerHahn-Meitner-Institut Berlin, Germany

C-III-5 CuInS2 Thin Film Solar Cells Fabricated by(10:15) Controlled Sodium Incorporation 257

T. Watanabe, H. Nakazawa, M. Matsui, H. Ohbo^,T.Nakada^Asahi Chemical Ind. Co., Ltd., Japan•Aoyama Gakuin Univ., Japan

C-III-6 A Study on Photovoltaic Characteristics of(10:30) CuInSj /CdS Solar Cell 259

G.-C. Park, J. Lee, H.-D. Chung, C.-D. Kim,H.-R. Park, W.-J. Jeong4, W.-S. Jung" , K.-S. LeeMokpo National Univ., Korea•Hanlyo Sanup Univ., Korea••Poly Technic Univ., Korea

C-III-7 Over 10% Efficient CuInSz Solar Cell by(10:45) Sulfurization 261

T. Nakabayashi, T. Miyazawa, Y. Hashimoto,K.ItoShinshu Univ., Japan


Tenyo Wednesday, 13:30-17:45 Tengyoku

Session C-IV Symposium C"Approaches for Low-Cost Fabricationof a-Si Solar Cells"

Chairpersons

C-IV-1Invited(13:30)







S. GuhaUnited Solar SystemCorp.

S. TsudaSanyo Electric Co.,Ltd.

A Plasma Physics Approach to Increasing theGrowth Rate of High-Quality a-Si for Solar CellFabrication 263G. Ganguly, A. MatsudaElectrotechnical Lab., Japan

Potential of VHF-Plasmas for Low-CostProduction of a-Si:H Solar Cells 267A. Shah, U. Kroll, H. Keppner, J. Meier, P. Torres,D. FischerUniv. of Neuchatel, Switzerland

C-IV-3 Strategic Study on Fabrication Process of a-Si:HInvited by Chemical Reaction 271(14:30) I. Shimizu

Tokyo Inst. of Tech., Japan

Interfaces in a-Si:H Solar Cell Structures — 275H. WagnerInstitut fllr Schicht- und Ionentechnik,-Photovoltaik-, Germany


Commercialization of Amorphous SiliconBased Multijunction Modules : R&D Issues

279R.R. Arya, D.E. Carlson, L. Yang, L.F. Chen,F. Willing, K. Raj an, K. Jansen, J. Newton,R. RomeroSolarex Corp., USA

Advances in Amorphous Silicon Alloy Cell andModule Technology 283S. Guha, J. Yang, A. Banerjee, T. Glatfelter,S. SugiyamaUnited Solar Systems Corp., USA

Advanced Fabrication Technologies ofIntegrated-Type Structure for a-Si Solar Cells

287S. Kiyama, S. Nakano, Y. Domoto, H. Hirano,H. Tarui, K. Wakisaka, M. Tanaka, S. Tsuda,S. NakanoSanyo Electric Co., Ltd., Japan

Development of Process Technologies forPlastic-Film Substrate Solar Cells 291T. Yoshida, S. Fujikake, S. Kato, M. Tanda,K. Tabuchi, A. Takano, Y. Ichikawa, H. SakaiFuji Electric Corp. R&D, Ltd., Japan

xxi

Wednesday, 11:00-12:30 Tenju

Session P-I-D Poster Session -1

Fundamentals -1

P-I-D-1 ESTI Scan Facility , .295R. Bisconti, R.A. Kous#, M. Lundqvist,H.A. OssenbrinkEuropean Solar Test Installation, Italy•Enschede Polytechnic, The Netherlands

P-I-D-2 The Fraunhofer ISE PV Charts: Assessment ofPV Device Performance 297K. Bttcher, S. KunzelmannFraunhofer Inst. for Solar Energy Systems, Germany

P-I-D-4 Intercomparison of Irradiance MeasurementsBased on WRR and ETL Irradiance Scales

299R. Shimokawa, I. Saito, Y. Miyake^, H. Ikeda*,F. Nagamine", S. I g a r i "Electrotechnical Lab., Japan•EKO Instruments Trading Co., Ltd., Japan••JQA Inst., Japan

.301P-I-D-5 Capacitance Effects in High Efficiency Cells

G. Friesen^, H.A. OssenbrinkEuropean Solar Test Installation, Italy•Grantholder Univ., Germany

Crystalline Si Solar Cells and Materials -1

P-I-D-6 Optical Modelling of Silicon Cells in SphericalShape 303R. Bisconti, H.A. OssenbrinkEuropean Solar Test Installation, Italy

P-I-D-8 Purification of Metallurgical Grade Silicon byElectron Beam Melting 305K. Hanazawa, N. Yuge, Y. Sakaguchi,H. Terashima, F. ArataniKawasaki Steel Corp., Japan

P-I-D-9 The Simulation Analyses of the Thermal Stressin an Electromagnetic Casting System __._— 307K. Sasatani, R. Kawamura, T. Onizuka, K. KanekoSumitomo SiTiX Corp., Japan

P-I-D-10 Characterization and Crystalline Properties ofthe Electromagnetic Casting (EMC) Ingots

309T. Onizuka, R. Kawamura, K. Sasatani, K. KanekoSumitomo SiTiX Corp., Japan

P-I-D-ll An Increase in the Photo voltage by KCNTreatments for <ITO / Silicon Oxide /Polycrystalline n-Si> Solar Cells 311S. Tachibana^, Y. Nakato^, K. Yoneda" ,H. Kobayashi**•Osaka Univ., Japan••Matsushita Electronics Corp., Japan^Research Development Corp., Japan

P-I-D-12 MIS Inversion Layer Solar Cells Made from Off-Grade Silicon 313G. LihuiShanghai Jiao Tong Univ., P.R. China

P-I-D-13 Buried Contact Silicon Solar Cell withMechanical Grooving ._.„-„.-__-..—.-.-._~_.315Z. Yuwen, L. Zhongming, M. Chundong,L. Zhiming, Y. Zhongyao, L. Kun, Y. Yuan,C. Zhiyun, H. ShaoqiBeijing Solar Energy Research Inst., P.R. China

P-I-D-14 Advanced Buried Contact Solar Cell Structure317

Y.H. Cho, A.U. Ebong, D.S. Kim, E.C. Cho,S.H. LeeSamsung Advanced Inst. of Tech., Korea

P-I-D-15 Voc-Limits of High Efficiency mc-Si Solar CellsInvestigated by the Mini Solar Cell (MSC)Method 319R. Baldner, S.W. Glunz, R. Schindler, W. Warta,W. WettlingFraunhofer Inst. for Solar Energy Systems, Germany

P-I-D-16 Calibration of A MO Reference SolarUsing Direct Normal Terrestrial Sunlight .Y. Yiqiang, Z. Lingru, MZ.ChengChina Academy of Space Tech., P.R. China

Cells- 3 2 1

P-I-D-17 Optimization of Dual n and p Back Side ContactCost Effective Silicon Solar Cells Using HspiceCircuit Modelling 323M.Y. Ghannam, R.P. Mertens*, J.F. Nijs*,R.Van Overstraeten*Kuwait Univ., Kuwait•IMEC, Belgium

P-I-D-18 The a-Si:H/Po!y-Si Heterojunction Solar Cells325

J. Yi, S.-S. KimSung Kyun Kwan Univ., Korea

P-I-D-19 Phosphorus Gettering in DCM MulticrystallineSilicon Wafers 327A. Fukatsu, T. Saitoh, I. Hide*Tokyo Univ. of Agri. and Tech., Japan•Daido Hoxan Inc., Japan

P-I-D-20 Optimization of Surface Passivation for HighEfficiency Silicon Solar Cell 329D.S. Kim, A.U. Ebong, S.H. Lee, E.C. Cho,Y.H. ChoSamsung Advanced Inst. of Tech., Korea

P-I-D-21 A Performance Simulation for SimplifiedBackside-Contact Silicon Solar Cells Using aNovel Two Dimensional Simulator Executed onPersonal Computers ........ ™_-™_~.~™~~~~331K. Matsukuma, T. Miyamoto, H. Yazu, K. MoritaKumamoto Inst. of Tech., Japan

P-I-D-22 Correspondence among PL Measurement, MBICMeasurement and Defect Delineation inPolycrystalline Cast-Si Solar Cells 333R. Shimokawa, M. Tajima*, M. Warashina*,Y. Kashiwagi**, H. KawanamiElectrotechnical Lab., Japan•Inst. of Space and Astronautical Sci., Japan••Tonen Corp. R&D Lab., Japan

P-I-D-23 Spectral CharacteristicsHeterostructures ....... .........

of a-Si:H/c-Si335

S. Gall, R. Hirschauer, M. Kolter*, D. BraunigHahn-Meitner-Institut Berlin, Germany•Forschungszentrum Jtllich, Germany

xxn

Amorphous Si Solar Cells and Materials -1

P-I-D-25 Optimal Optical Design of Thin Film Solar Cells337

F. Zhu*. P. Jennings, J. Cornish, G. Hefter,K. LuczakMurdoch Univ., Australia• Am-Si Pty Ltd., Australia

P-I-D-26 Optical Designs of Single and Tandem StructureAmorphous Silicon Solar Cells „_._„-_.__.„_. 339P. Stulik, J. SinghNorthern Territory Univ., Australia

P-I-D-27 Influence of Interfaces on the Stability of a-SiTandem Solar Cells 341XGeng*. Z.Yu***, Z.Wang*, Z.Sun*, W. Xu*•Nankai Univ., P.R. China**Tianjin Transport Eng. College, P.R. China

P-I-D-28 Amorphous / Mkrocrystalline Silicon TandemSolar Cells Prepared by Triode PECVD 343L. Xianbo, S. Shuran, Y. Feng, P. Guangqin,M. Zhixun, K. Gaunglin, Z Yuwen*, H. Shaoqi*,L. Zhongming*Chinese Academy of Sci., P.R. China•Beijing Solar Energy Research Inst., P.R. China

P-I-D-29 Light - and Current - Induced Degradation inAmorphous Silicon Solar Cells : A ComparativeStudy 345A. Dasgupta,N. Palit, S. Ray, A.K. BaruaIndian Association for the Cultivation of Sci., India

P-I-D-30 Development of Large Area Amorphous SiliconSolar Cells for Space 347G.J. Vendura, Jr., M.A. KruerTWR Space and Tech. Div., USA

P-I-D-31 Effect of Reverse Bias Annealing on LightInduced Defects in a-Si:H p-i-n Solar Cells

349V. Dutta, R.V.R. MurthyIndian Inst. of Tech., India

P-I-D-32 Charge Carrier Transport in n-i-p and p-i-n a-Si/c-Si Heterojunction Solar Cells 351J. Furlan, F. Smole, P. Popovic, M. TopicUniv. of Ljubljana, Slovenia

P-I-D-33 Experimental Model and Long-Term Predictionof Conversion Efficiency a-Si Solar Cells 353K. Takahisa, T. Kojima, K. Nakamura, T. Koyanagi,T. YanagisawaElectrotechnical Lab., Japan

P-I-D-34 Requisites for the Development of Efficient,Highly Stable Amorphous Silicon Solar Cells_..™-._.^._._._™™_.«™._._._™._™.m_._.«._ 3 5 5C. Beneking, B. Rech, M. Kolter, W. Appenzeller,H. WagnerResearch Center Juelich, Germany

P-I-D-35 Nucleation and Growth of Textured Al-DopedZnO Films for a-Si:H- Solar Cells Analysed byHigh Resolution SEM 357O. Kluth, C. Beneking, B. Rech, W. Appenzeller,H. Wagner, R. Waser*, S. HoffinannResearch Center Juelich, Germany•Univ. of Aachen, Germany

P-I-D-37 Sensitivity Study of a-Si:H Solar Cell ModelParameters ™«.»._«™.m_™. .........—................ 359J.A. Willemen, M. Zeman, J.W. MetselaarDelft Univ. of Tech., The Netherlands

P-I-D-38 New Concept Cycled Illumination andTemperature Accelerated Degradation TestMethod for Thin-Film PV Cells 361S. Igari, J.Nose, A. Nakano, K. Takahisa*,A. Matsuda*JQA Inst., Japan•Electrotechnical Lab., Japan

P-I-D-39 Role of Buffer Layer at the p/i Interface on theStabilized Efficiency of a-Si Solar Cells 363B. Samanta, A.K. BaruaIndian Association for the Cultivation of Sci., India

P-I-D-40 Highly Conductive Undoped ZnO Films Preparedby Pyrosol Method from Zinc Acetate andMethanol Solutions 365C.H. Lee, K.S. Lim, J. Song*, K.H. Yoon*Korea Advanced Inst. of Sci. and Tech., Korea•Korea Inst. of Energy Research, Korea

P-I-D-41 Alternative Deposition and Hydrogen Treatmentof Undoped ZnO Film Using Photo-MOCVD

367S.J. Baik, W.Y. Cho, C.H. Lee, K.S. LimKorea Advanced Inst. of Sci. and Tech., Korea

P-I-D-42 Etching and Passivation Effects on a-Si:H SolarCell Characteristics by Hydrogen TreatmentUsing Mercury-Sensitized Photo-CVD Method

369J.H. J a n g * " , K.S. Lim*•Korea Advanced Inst. of Sci. and Tech., Korea••Samsung Electronics Co., Ltd., Korea

Reduction of371

P-I-D-43 Novel Approaches to the CostSilicon Thin-Film Solar CellsB. Crone, A. Payne, S. WagnerPrinceton Univ., USA

P-I-D-44 High Stabilized Efficiency Amorphous SiliconSolar Cells Using Deuterium Dilution Method._™.~~. ............. ...... __.. _™.373K. Dairiki, S. Suzuki, A. Yamada, M. KonagaiTokyo Inst. of Tech., Japan

P-I-D-45 Photo Atomic Layer Deposition of TransparentConductive ZnO Films 375K. Saito, Y. Watanabe, K. Takahashi, T. Matsuzawa,B. Sang^, M. Konagai*Teikyo Univ. of Sci. and Tech., Japan•Tokyo Inst. of Tech., Japan

P-I-D-46 Novel Light Trapping Schemes Involving PlanarJunctions and Diffuse Rear Reflectors for ThinFilm Silicon Based Solar Cells 377K. Winz, CM. Fortmann^, Th. Eickhoff,H. Wagner, H. Fujiwara", I. Shimizu t#

Research Center Jttlich GmbH, Germany•State Univ. of New York at Stony Brook, USA••Tokyo Inst. of Tech., Japan

xxm

CIS Materials and Cells - I

P-I-D-47 Influence of Annealing Temperature on theProperties of Cu(In,Ga)Se2 Thin Films byThermal Crystallization in Se Vapour 379T. Yamaguchi, Y. Yamamoto*, T. Tanaka",N. Tanahashi", A. Yoshida**Wakayama College of Tech., Japan•Fukui College of Tech., Japan••Toyohashi Univ. of Tech., Japan

P-I-D-48 Preparation of CuInSe2 Thin Films with LargeGrain by Excimer Laser Ablation .. 381A. Yoshida, N. Tanahashi, T. Tanaka, Y. Demizu,Y. Yamamoto^, T. Yamaguchi"Toyohashi Univ. of Tech., Japan•Fukui College of Tech., Japan••Wakayama College of Tech., Japan

P-I-D-49 Characterization of Cu(In,Ga)2Se3.s Thin FilmsPrepared by RF Sputtering from Cu(In,Ga)Se2with Na2Se 383T. Tanaka, N. Tanahashi, Y. Yamamoto^,T. Yamaguchi", A. YoshidaToyohashi Univ. of Tech., Japan•Fukui College of Tech., Japan••Wakayama College of Tech., Japan

P-I-D-57 Effect of Ionization of Individual Cluster Beamon Film Qualities in ICB Deposition of CuInSei-Based Multinary Compounds ._„.„_~.____._~. 397Y. Yanase, K. Iida, Y. Kikuchi, T. Shimizu,T. Ishibashi, K. SatoTokyo Univ. of Agri. and Tech., Japan

P-I-D-58 Preparation of CuInSe2 Thin Films by Metal-Organic Decomposition Method Using MetalNaphthenates 399S. Ando, Y. Asahi, S. Okamura#, T. TsukamotoSci. Univ. of Tokyo, Japan•Sci. Univ. of Tokyo in Yamaguchi, Japan

P-I-D-59 Characterizations of Prepared CuInSei ThinFilms by Pulsed Laser Ablation Method 401S. Ando, Y. Saino, S. Endo, T. TsukamotoSci. Univ. of Tokyo, Japan

m-V and Space Cells-I

P-I-D-60

P-I-D-61

of Sprayed385

P-I-D-50 Preparation and PropertiesCuGat.sIne.sSeiThin FilmsK.T.R. Reddy, RB.V. ChalapathySri Venkateswara Univ., India

P-I-D-51 Composition Control of Electrodeposited Cu-In-Se Layers for Thin Film CuInSei Preparation

387S. Nakamura, S. Sugawanr*, A. Hashimoto^,A. Yamamoto*Tsuyama National College of Tech., Japan•Fukui Univ., Japan

P-I-D-52 Study of One Step Electrodeposition Conditionfor Preparation of CuIn(Se,S)2 Thin Films 389S. Kuranouchi, T. NakazawaNagano National College of Tech., Japan

P-I-D-53 Deposition of InSe and Ga2Te3 BinaryCompounds Thin Films by Close-SpacedSublimation (CSS) and Close-Spaced VapourTransport (CSVT) 391A. Mostavan, N.R. Jauhari*, R. A d i " , H. Sudijo*,F. Guastavino+

Inst. Teknologi Bandung, Indonesia•Lembaga Ilmu Pengetahun Indonesia, Indonesia••Univ. Indonesia, Indonesia*Univ. Montpellier U, France

Improvement of GaAsiuPu/Si Tandem SolarCell 403N. Kaneyama, T. Soga, T. Jimbo, M. UmenoNagoya Inst. of Tech., Japan

Characterization and Fabrication of InGaP/SiTwo-Terminal Tandem Solar Cells 405S. Mori, T. Egawa, J. Dong+, K. Matsumoto^,T. Soga, T. Jimbo, M. UmenoNagoya Inst. of Tech., Japan•Nippon Sanso Corp., Japan

P-I-D-62 High Efficiency MonolithicGaAs/Si Tandem Solar Cells ._

Three-Terminal407

P-I-D-54 Preparation of CuIn(SxSei-x)2Sulfurization and Selenization _

Thin Films by393

T. Shiraishi, T. Soga, T. Egawa, T. Jimbo, M. UmenoNagoya Inst. of Tech., Japan

P-I-D-63 Deep Level Transient Spectroscopy Analysis ofRadiation Damage to Silicon Solar Cells 409SJ. Taylor, M. Yamaguchi, K. Ando4 ,T. Yamaguchi4, S.Matsuda", O .Kawasak i"Toyota Tech. Inst, Japan*Tottori Univ., Japan"NASDA, Japan

P-I-D-64 Large Area, Radiation Resistant, 12.5% BOL,InP/Si Solar Cells 411R.J. Walters*, SJL Messenger", H.L. Cotal*,G.P. Summers^, E.A. Burke**, S.J. Wojtczuk",H.B. Serreze^•U.S. Naval Research Lab., USA"SFA, Inc., USA^ n i v . of Maryland Baltimore Country, USA^Spire Corp., USA

P-I-D-65 Annealing of Electron-Irradiated SingleJunction InGaP/GaAs Solar Cells 413

T. Ohashi, K. Inakoshi, Y. Hashimoto, K. ItoShinshu Univ., Japan

P-I-D-55 Electrical Properties of CuInSe2 Films Preparedby Evaporation of CaiSe and IniS* 395S.C. Park, S.H. Kwon, J.S. Song+, B.T. AhnKorea Advanced Inst. of Sci. and Tech., Korea•Korea Inst. of Energy Research, Korea

P-I-D-66

C. Vargas-Aburto, R.M. Uribe, D. Brinker*,D.A. Scheiman**, M. Yamaguchi"1"Kent State Univ., USA*NASA Lewis Research Center, USA"NYMA, Inc., USAToyota Tech. Inst., Japan

Linear PV Receivers for Space ConcentratorModules 415V.M Andreev, I.V. Kochnev, V. M. Lantratov,V.R. Larionov, V.D. Rumyantsev, M. Z. ShvartsRussian Academy of Sci., Russia

xxiv

P-I-D-67 Dislocation Density and Diffusion Lengths inHeteroepitaxial InP/Si Solar Cells 417R.K. Jain, D.J. FloodNASA Lewis Research Center, USA

P-I-D-68 AlGaAs/GaAs LPE Grown Concentrator SolarCells 419V.M Andreev, V.P. Khvostikov, E.V. Paleeva,M.Z. ShvartsRussian Academy of Sci., Russia

P-I-D-69 Electrical Analysis of Low Energy Argon IonBombarded InP 421M.M.A. NabyTanta Univ., Egypt

CdTe Materials and Processes

P-I-D-70 An In-Situ Method for CdCh Treatment on CdTeThin Films 423P.D. Paulson, V. DuttaIndian Inst. of Tech., India

P-I-D-71 Transparent ITO-CdTe Contacts for Thin FilmCdS-CdTe Solar Cells 425J.H. Chao, A. Turner, J.C. McClure, G.B. Lush,V.P. SinghThe Univ. of Texas at El Paso, USA

P-I-D-72 Transparent Sputtered Indium Tin OxideContacts to Solution Grown Cadmium SulfideFilms 427R. Santiesteban, J.C. McClure, V.P. SinghThe Univ. of Texas at El Paso, USA

P-I-D-73 Growth Kinetics and Structural Characterizationof Polycrystalline CdTe Films Grown by Hot-Wall Vacuum Evaporation 429S. Seto, S. Yamada, K. Suzuki*Ishikawa National College of Tech., Japan•Hokkaido Inst. of Tech., Japan

P-I-D-74 Effect of Cu2Te-Au Contact to CdTe Film onPhotovoltaic Properties of CdS/CdTe Solar Cell

431H. Uda, S. Ikegami, H. SonomuraKinki Univ., Japan

P-I-D-75 Raman and PhotoluminescenceCharacterizations of ZhiCdi-xS Layers Depositedby the Electrochemical Deposition 433M. Ichimura, T. Furukawa, K. Shirai, F. GotoNagoya Inst. of Tech., Japan

P-I-D-76 Defect Reduction in Electrochem ically DepositedCdS Thin Films by Annealing in O2 435F. Goto, K. Shirai, M. IchimuraNagoya Inst. of Tech., Japan

P-I-D-77 Fabrication and Characterization of CdS andZnS Thin Films Made by Close SpacedSublimation (CSS) and Close-Spaced VaporTransport (CSVT) 437R. Adi, A. Mostavan*, N.R. Jauhari",F. Guastavino+

Univ. Indonesia, Indonesia•Institut Teknologi Bandung, Indonesia••Lembaga Ilmu Pengetahuan Indonesia, IndonesiaiJniv. Montpellier IL France

P-I-D-78 Thin Film CdS/CdTe Solar Cells Prepared byElectrodeposition Using Low Cost Materials

439F.J. Alvarez, N. Di Lalla, A. LamagnaNational Atomic Energy Commission, Argentina

P-I-D-79 Influence of Substrate on Performance of n-CdSeo.7Teo.3 Thin FUm/PolysulphidePhotoelectrochemical Solar Cells 441V. Damodara Das, L. DamodareIndian Inst. of Tech., India

P-I-D-80 Enhancement of Grain Size in CdS FilmsPrepared by Chemical Bath Deposition andCdCh Treatment 443S.C. Park, J.S. Song*, B.T. AhnKorea Advanced Inst. of Sci. and Tech., Korea•Korea Inst. of Energy Research, Korea

P-I-D-81 Photovoltaic Properties of CdTe Solar CellsFabricated by Close-Spaced Sublimation withScreen-Printed CdTe Sources 445G.Y. Chung, B.W. Han, B.T. AhnKorea Advanced Inst. of Sci. and Tech., Korea

P-I-D-82 Thermal Stress Measurements on Heat-TreatedCdTe Thin films 447D. Kim, B. Qi*, D.L. Williamson*, J.U. Tremy*Korea Univ., Korea•Colorado School of Mines, USA

PV Modules and BOS Components

P-I-D-83

P-I-D-84

The Behavior of Highly ConcentratedPolycrystalline Solar Cell in Hot Desert Climate.-.^_^.«^™.__^-™. 449M.A. Mosalam Shaltout, M.M. SabryNational Research Inst. of Astronomy andGeophysics, Egypt

The Experience on Compound ParabolicConcentrator for Photovoltaic —~~ 451A. Mostavan, R. Muhida, M.F.A. FaruqyInst. of Tech. Bandung, Indonesia

P-I-D-86 Thermal Recovery Effect on Light-InducedDegradation of Amorphous Silicon SolarModule under Sunlight 455T. Yamawaki, S. Mizukami, A. Yamazaki*,H. Takahashi*Kaneka Corp., Japan•Nara National College of Tech., Japan

P-I-D-87 Prediction of Seasonal and Long TermPhotovoltaic Module Performance from FieldTest Data 457I. Muirhead, B. HawkinsTelstra Research Lab., Australia

P-I-D-88 Development of a-Si Photovoltaic ModulesIntegrated with Roofing Material 459K. Hayashi, M. Kondo, H. Nishio, S. Kurata,A. Takenaka, A. Ishikawa, K. Nishimura,H. Yamagishi, S. Mizukami, T. Yamawaki,Y. Matsumura, T. Hatsukaiwa, Y. TawadaKaneka Corp., Japan

XXV

P-I-D-89 Annual Exergy Evaluation on Photovoltaic-Thermal Hybrid Collector 461T. Fujisawa, T. TaniSci. Univ. of Tokyo, Japan

P-I-D-91 A New Design and Properties of a ThreeDimensional Lens for Non-Tracking PV Module

463K. Nakamura, K. Yoshioka, S. Goma, T. SaitohTokyo Univ. of Agri. and Tech., Japan

P-I-D-92 A Study on the Control of Grid-ConnectedPhotovoltaic Inverter Using Variable Hysteresis-Band Current Controller ._™_™_.™_~_~__._ 465Y.-O. Choi, S.-Y. Jeong, G.-B. Cho, H.-L. Baek,S.-K. Kim*, G.-J. Y u " , J.-S. Song**Chosun Univ., Korea*Kongju National Univ., Korea"Korea Inst. of Energy Research, Korea

.467P-I-D-93 Multi Solar System ,A. ElazariSolar, Israel

P-I-D-94 Solar Multimodule for Electrical and Hot WaterSupply for Residentially Building 469V.Nikiforov, A.R. Elazari*Choromagen, R&D Dept, Israel*Solar, Israel

P-I-D-95 Secular Degradation of Crystalline PhotovoltaicModules 471K. Machida, T. Yamazaki, T. Hirasawa*Tokyo Electric Power Co., Japan•Kandenko Co., Ltd., Japan

P-I-D-96 Analysis of MPPT Characteristics inPhotovoltaic Power System . — 473T. Kawamura, K. Harada, Y. Ishihara, T. Todaka,T. Oshiro*, H. Nakamura*, M. Imataki*Doshisha Univ., Japan* Japan Quality Assurance Org., Japan

P-I-D-97 Digital Firing andPhotovoltaic Inverter „

Digital Control of a™475

S.H. El-Hemawi, Y.A.G. Atia, M.I. KamePElectronics Research Inst, Egypt•Benha Higher Inst. of Tech., Egypt

P-I-D-98 Output Stability of Various PV Modules by Long-Term Exposure Test at JQA 477S. Igari, J. Nose, A. Nakano,T. Shigekuni,H. TerashimaJQA Inst., Japan

P-I-D-99 Solar Battery Power Take-Off Extremal System479

S.M. Karabanov, V.V. Simkin^Gelion Ltd, Russia•Ryazan State Radio Eng. Academy, Russia

National Project

P-I-D-100 Electrification of Nine Villages in India by SolarPhotovoltaics -A Case Study 481P.C. Sarma, M.K. Chaudhury, D. BaruahAssam Sci. Tech. and Environment Council, India

P-I-D-101 Development of Photovoltaics in PolandS.M. Pietruszko, G. WisniewskPWarsaw Univ. of Tech., Poland•Inst. for Building, Mechanization andElectrification of Agri., Poland

P-I-D-102 Management Problems of RuralApplications : West Bengal Experience —D.K. BasuGovt. of West Bengal, India

483

SPV.485

P-I-D-103 Potential of Solar Home-Lighting System inRural Western India 487J.N. Malaviya, S.P. RanabeMitcon Ltd., India

P I-D-104 UNIDO'S Programme for the Promotion ofSolar Energy Technologies 489A. BromleyUNJDO, Austria

P-I-D-105 Assessment and Application of PhotovoltaicHybrid Systems in Indonesia 491S. Trihadi, Z. UdinUPT LSDE-BPP Teknologi, Indonesia

Thursday, 8:00-9:55 Tenran

Session A-VI System Applications

Chairpersons G. BlaesserJoint ResearchCentre

T.TaniSci. Univ. of Tokyo

A-VI-1Invited(8:00)

A-VI-2Invited(8:20)

A-VI-3(8:40)

A-VI-4(8:55)

A-VI-5(9:10)

Experiences in Field Test Program of Japan

K. Konno, Y. FujisawaNEDO, Japan

.493

Performance Evaluation of EGAT's PV GridConected Program —._—......—•.....••........-—„ 497C. JivacateElectricity Generating Authority of Thailand,Thailand

Evaluation of Electric Motor and GasolineEngine Hybrid Car Using Solar Cells 501K. Sasaki, M. Yokota, H. Nagayoshi, K. KamisakoTokyo Univ. of Agri. and Tech., Japan

Fundamental Study on Photovoltaic / Fuel CellPower Hybrid System (Characteristic of SystemApplied Hydrogen Absorbing Alloys) 503N. Sekiguchi, T. TaniSci. Univ. of Tokyo, Japan

Experimental Study for Solar HydrogenProduction by Photovoltaic Near Cairo, Egypt

505M.A. Shaltout, F.F.G. Areed*, A.E. Ghettas,H.K. ElminirNational Research Inst. of Astronomy andGeophysics, Egypt•Mansoura Univ., Egypt

A-VI-6(9:25)

Research on EngineeringEffective PV Installation

Method for Cost.507

K. Takigawa, R. Kashima, Y. UchiyamaCentral Research Inst. of Electric Power Ind., Japan

XXVI

A-VI-7 The Results on High Frequency Electric Noise(9:40) Radiation (Demonstration Test Results at

Rokko Test Center) 509A. Kitamura, H. Matsuda, S. Tomita#,K. Takigawa^, H. Kobayashi^The Kansai Electric Power Co., Inc., Japan•Central Research Inst. of Electric Power Ind.,Japan


Thursday, 8:00-9:25 Tengyoku

Thursday, 10:10-11:55 Tenran

Session A-VII Fundamentals and New Approach

Chairpersons : J.H. Werner T. NagatomoMax-Planck-Inst. fllr Shibaura Inst. ofFestkOrperforschung Tech.

A-VII-1(10:10)

A-VII-2(10:25)

A-VII-3(10:40)

A-VII-4(10:55)

A-VII-5(11:10)

A-VII-6(11:25)

A-VII-7(11:40)

Minority Carrier ControlledPhotoelectrochemical Solar Cells Having an n-SiElectrode Modified with Ultra fine PlatinumParticles 511S. Yae, J. Jia^, M. Fujitani, Y. NakatoOsaka Univ., Japan•Inst. of Photographic Chemistry, P.R. China

from Camphoric513

Photovoltaic Solar CellCarbon - A Natural Source.K. Murali Krishna, T. Soga, K. Mukhopadhyay*,M. Sharon*, M. UmenoNagoya Inst. of Tech., Japan•Indian Inst. of Tech., India

Application of Rare EarthPhotovoltaic Precursors ._._.„.„

Complexes for515

K. Kawano, K. Arai, H. Yatnada, N. Hashimoto,R. NakataThe Univ. of Electro-Communications, Japan

Voltage and Current Loss in SemiconductorSolar Cells from MCV and Simultaneous IVMeasurements ._._._-._„._„__„„.__._._„.„ 517N.D. Sinh, F. SpieB, K. Kliefoth, W. FtlsselHahn-Meitner-Inst. Berlin, Germany

Quantum Efficiency of Silicon Solar Cells atLow Temperatures -.„.„.-_.__.„.„.„._-._._.„„... 519M. Wolf, R. Brendel, J.H. WernerMax-Planck-Institut fllr Festkfirperforschung,Germany

IQE1D - A Computer Program for RoutineQuantum Efficiency Analysis ........ .—..521R. Brendel, R. PlieningerMax-Planck-Institut fllr Festkftrperforschung,Germany

Local Current - Voltage Curves MeasuredThermally (LIVT): A New Technique ofCharacterizing PV Cells 523I.E. Konovalov, O. Breitenstein^, K. Iwig4

Shevchenko Univ. in Kiev, Ukraine•Max Planck Inst. ofMicrostructure Physics,Germany

Session B-V Super High-Efficiency III-V Cells

Chairpersons : S. MinKorea Inst. Sci.Tech.

M. YamaguchiToyota Tech. Inst.

B-V-lInvited(8:00)

B-V-2(8:20)

Efficiency InGaP/GaAs TandemHighCellsM. Ohmori, T. Takamoto, E. Ikeda, H. KuritaJapan Energy Corp., Japan

Solar..525

Process Damage Free Thin-Film GaAs SolarCells by Epitaxial Liftoff with GalnP WindowLayer 529

B-V-3(8:35)

B-V-4(8:50)

B-V-5Invited(9:05)

Y. Yazawa, J. Minemura, K. Tamura, S. Watahiki,T. Kitatani, T. WarabisakoHitachi, Ltd., Japan

Characteristics of GaAs Solar Cells on GeSubstrate with a Preliminary Grown Thin Layerof AIGaAs 531K. Takahashi, S. Yamada, T. Unno, S. KumaHitachi Cable, Ltd., Japan

Over 27% Efficiency GaAs/InGaAsMechanically Stacked Solar Cell 533H. Matsubara, T. Tanabe, A. Moto, Y. Mine,S. TakagishiSumitomo Electric Ind., Ltd., Japan

GalnP/GaAs Multijunction Solar Cells forTerrestrial and Space Applications .™~_ — 535J.M. Olson, D.J. Friedman, S.R. Kurtz,K.A. BertnessNational Renewable Energy Lab., USA


Session B-VI III-V Cells

Chairpersons : C. VerieCNRS

Y. YazawaHitachi, Ltd.

B-VI-1Invited(9:30)

B-VI-2(9:50)

Modeling of III-V Photovoltaic,„„.„ 539

B-VI-3(10:05)

NumericalDeveices .....J.L. Gray, R.J. SchwartzPurdue Univ., USA

Performance and Parameter Analysis ofTandem Solar Cells Using Measurements atMultiple Spectral Conditions 543R. Adelhelm, K. BtlcherFraunhofer-Inst. for Solar Energy Systems,Germany

Improvement of Conversion Efficiency byInAlAs Window Layers for p+n InP Solar Cells

545T. Ueda, M. Mohri, S. Gotoh, H. Kakinuma,M. AkiyamaOld Electric Ind. Co., Ltd., Japan


xxvn


Session B-VII III-V Materials

Chairpersons B. SchwartzPurdue Univ.

H. KawanamiElectrotechnicalLab.

B-VII-1 Heteroepitaxia! Technologies on Si for High-Invited Efficiency Solar Cells 547(10:35) M. Umeno

Nagoya Inst. of Tech., Japan

B-VII-2 The Application of Quantum Well Solar Cells to(10:55) Thermophotovoltaics 551

P. Griffin, I. Ballard, K. Barnham, J. Nelson,A. ZachariouImperial Collage, U.K.

B-VII-3 Characterization of GaAs Tunnel Junction with(11:10) a Heavily Carbon-Doped p+-Layer Fabricated by

Metalorganic Molecular Beam Epitaxy 553J.-H. Oh, M. KonagaiTokyo Inst. of Tech., Japan

B-VII-4 Optimal Growth Procedure of GalnP/GaAs(11:25) Heterostructure for High-Efficiency Solar Cells

555T. Kitatani, Y. Yazawa, S. Watahiki, K. Tamura,J. Minemura, T. WarabisakoHitachi, Ltd., Japan

Thursday, 8:00-10:00 Tenyo

Session C-V Amorphous Si Solar Cells and Materials(Materials and S-W Effect)

Chairpersons H. WagnerJuelich ResearchCenter

H. OkamotoOsaka Univ.

C-V-l Effective Conversion Efficiency Enhancement of(8:00) Amorphous Silicon Modules by Operation

Temperature Elevation — . . „ „ . „ . . — 557M. Kondo, H. Nishio, S. Kurata, K. Hayashi,A. Takenaka, A. Ishikawa, K. Nishimura,H. Yamagishi, Y. TawadaKaneka Corp., Japan

C-V-2 More Insights from CPMand PDS: Charged and(8:15) Neutral Defects in a-Si:H 559

F. Siebke*", H. Stiebig*, R. Carius*•Forschungszentrum Julich, Germany••Sanyo Electric Co. Ltd., Japan

C-V-3 Laser Desorption Time of Flight Mass(8:30) Spectrometry as a Novel Characterization

Method of Amorphous Silicon for Solar Cell561

T. Kato, N. Hara*, A. Suzuki, M. Sumiya,M. Kawasaki, A. Matsuda*, H. KoinumaTokyo Inst. of Tech., Japan•Electrotechnical Lab., Japan

C-V-4 A Study on Reversible Photo-Induced Structural(8:45) Change in a-Si:H by Polarized Electroabsorption

563K. Shimizu, T. Shiba, T. Tabuchi, H. OkamotoOsaka Univ., Japan

C-V-5(9:00)

C-V-6(9:15)

C-V-7(9:30)

C-V-8(9:45)

Changes of Infrared Absorption of Si-H byLight Irradiation and Thermal Quenching in a-Si:H 565T. Goto, S. Nonomura, S. Hirata, S. NittaGifu Univ., Japan

Improvement in Photoconductivity of a-Si:C:HFilms bya Combination of Heated Filament andRF Plasma Deposition Technique _.. ._.—_ 567D. Das, S. Chattopadhyay, A.K. BaruaIndian Association for the Cultivation of Sci.,India

Scanning Probe Microscopy and QuantumChemical Studies on the Initial Growth Processof a-Si:H Plasma CVD on Graphite 569K. Nakajima, K. Miyazaki, A. Ohtomo, K. Sato*,H. KoinumaTokyo Inst. of Tech., Japan'Yokohama National Univ., Japan

Growth of Boron-doped ZnO Thin Films byAtomic Layer Deposition 571B. Sang, A. Yamada, M. KonagaiTokyo Inst. of Tech., Japan

- - - Coffee Break - - •

Thursday, 10:15-12:00 Tenyo

Session C-VI Amorphous Si Solar Cells and Materials(Advanced Process)

Chairpersons J.JangKyung Hee Univ.

C-VI-1(10:15)

Amorphous SiliconTempered GlassSandblast Process ~~~

A. MatsudaElectrotechnicalLab.

Solar Cell on TexturedSubstrate Prepared by

573

C-VI-2(10:30)

C-VI-3(10:45)

C-VI-4(11:00)

H. Taniguchi, H. Sannomiya, K. Kajiwara,K. Nomoto, Y. Yamamoto, K. Hiyoshi,H. Kumada, M. Murakami, T. TomitaSharp Corp., Japan

Development of Tempered Glass Substrates withTCO Films for a-Si Solar Cells 575M. Fukawa, K. Sato, T. Tsukamoto, K. Adachi,H. NishimuraAsahi Glass Co., Ltd., Japan

Fabrication of Amorphous Silicon p-i-n SolarCells Using Ion Shower Doping Technique

577B.Y. Moon, J.H. Choi, J.G. Kim, J. Jang, D.W. Kim*,S.S. Bae*, K.S. YoonKyung Hee Univ., Korea•Yukong Ltd., Korea

The Light Induced Degradation of the a-Si:HAlloy Cell Deposited by the Low PressureMicrowave PCVD at High Deposition Rate

579K. Saito, M. Sano, J. Matsuyama, M Higasikawa,K. Ogawa, I. KajitaCanon Corp., Japan

xxvin

C-VI-5 High Efficiency a-Si:H Solar Cells from a Single(11:15) Chamber, Large-Area, Non-UHV, Not Load-

Locked, Industrial Batch-Type PECVD Reactor581

R.E.I. Schropp, J.K. Rath, M.B. von der Linden,M. Zeman*, W. Loyer" , J. HyvSrinen+

Utrecht Univ., The Netherlands*Delft Univ. of Tech., The Netherlands**NAPS France, France"^Microchemistry Ltd., Finland

C-VI-6 Development of High Efficiency a-Si Solar Cell(11:30) Submodule with a Size of 30cm x 40cm _ 583

K. Wakisaka, M. Tanaka, M. Isomurta, H. Haku,S. Kiyama, S. TsudaSanyo Electric Co., Ltd., Japan

C-VI-7 Low Cost Amorphous Silicon Solar Module(11:45) Encapsulated with Liquid Resin 585

M. Kondo, A. Takenaka, A. Ishikawa, S. Kurata,K. Hayashi, H. Nishio, K. Nishimura,H. Yamagishi, Y. TawadaKaneka Corp., Japan

Friday, 8:00-9:30 Tenran

Session A-VIII CIS Cells and Related Materials

Chairpersons M.A. ContrerasNational RenewableEnergy Lab.

T. WadaMatsushita ElectricInd. Co., Ltd.

A-VIII-1 Low Temperature Deposition of CuInSei and(8:00) CuGaSe2 Thin Films by Ionized Cluster Beam

Technique 587K. Sato, Y. Yanase, T. Shimizu, T. Ishibashi,K. Kondo*Tokyo Univ. of Agri. and Tech., Japan•Stanley Electric Co. Ltd., Japan

A-VIII-2 Development of CuInSei Thin Film Solar Cells(8:15) by Encapsulated Selenization 589

K. Sato, T. Kamiya, S. Nakagawa, T. Ikeya,M. IshidaYazaki Corp., Japan

A-VIII-3 A Simple Way to Form CuIn(S,Se)2 Alloys from(8:30) CuInSei Thin Film for High V.c 591

Y.H. Cheng, B.H. Tseng, JJ. Loferski, H.L. HwangNational Tsing Hua Univ., Taiwan

A-VIII-4 Improved Cu(In,Ga)(S,Se)2 Thin Film Solar(8:45) Cells by Surface Sulfurization 593

T. Nakada, H. Ohbo, T. Watanabe*, H. Nakazawa*,M Matsui*, A. KuniokaAoyama Gakuin Univ., Japan•Asahi Chemical Ind. Co., Ltd., Japan

A-VIII-5 A Novel Structure Model for CuInsSes 595(9:00) T. Hanada, A. Yamana, Y. Nakamura, O. Nittono,

T. Wada*Tokyo Inst. of Tech., JapanMatsushita Electric Ind. Co., Ltd., Japan

A-VIII-6 Large Area ZnO Films Optimized for Graded(9:15) Band-Gap Cu(InGa)Se2-Based Thin-Film Mini-

Modules 597N.F. Cooray*, K. Kushiya, A. Fujimaki,I. Sugiyama, T. Miura, D. Okumura, M. Sato,M. Ooshita, O. YamaseShowa Shell Sekiyu K.K., Japan•NEDO, Japan

Friday, 9:45-11:00 Tenran

Session A-IX Characterization of CIS Thin Films andDevices

Chairpersons L. StoltUppsala Univ.

K. SatoTokyo Univ. ofAgri. and Tech.

A-IX-1 Heteroepitaxy of Chemical Bath Deposited CdS(9:45) on Single Crystal CuInSe2/Si Substrates 599

D. Lincot, M. Furlong, M. Froment*,M.C. Bernard*, R. Cortes4, A.N. Tiwar i" ,M.Krejci", H . Z o g g "ENSCP, France*Univ. Pierre et Marie Curie, France"AFIF at Swiss Federal Inst. of Tech., Switzerland

A-IX-2 Electrochemical Profiling of Carrier(10:00) Concentration in Cu(InGa)Se2 Thin Film Solar

Cells 601A. Shimizu, A. Yamada, M. KonagaiTokyo Inst. of Tech., Japan

A-IX-3 Determination of Charge Carrier Collecting(10:15) Regions in Chalcopyrite Heterojunction Solar

Cells by Electron Beam Induced CurrentMeasurements _ ™ . _.„._.___ .__™. 603R. Scheer, M. Wilhelm, H.J. LewerenzHahn Meitner Inst., Germany

A-IX-4 Examination of Blocking Current-Voltage(10:30) Behaviour Through Defect Calcopyrite Layer in

ZnO/CdS/CIGS/Mo Solar Cell 605M Topic, F. Smole, J. FurlanUniv. of Ljubljana, Slovenia

A-IX-5 Effects of Annealing on CuInSe2 Films Grown(10:45) by Molecular Beam Epitaxy 607

S. Niki, I. Kim, P.J. Fons, H. Shibata, A. Yamada,H. Oyanagi, T. Kurafuji*, S. Chichibu*,H. Nakanishi*Electrotechnical Lab., Japan*Sci. Univ. of Tokyo, Japan


XXIX

Friday, 8:00-11:10 Tengyoku

Session B-VIII Symposium D"Space Solar Cells and Systems"

S. MatsudaNASDA

H. TakakuraRitsumeikan Univ.

Chairpersons : D.J. FloodNASA LewisResearch Center

R.J. WaltersU.S. Naval ResearchLab.

B-VIII-0 Introductory Talk(8:00) S. Matsuda

NASDA, Japan

B-VIII-1 GaAs and Tandem Space Solar Cells on GeInvited 609(8:10) P.A. lies, Y.C.M. Yeh, C.L. Chu, F.F. Ho

Tecstar, Applied Solar Div.,USA

B-VIII-2 High Efficiency Silicon Space Solar Cell 613Invited A. Suzuki(8:30) Sharp Corp., Japan

B-VIII-3 An Attempt for Radiation Damage Prediction of(8:50) Space Solar Cells 617

M. Yamaguchi, R.J. Walters*, G.P. Summers*,D.J. Flood", SJ. Taylor, T. Takamoto+,M. Ohmori4,0. Kawasaki*, S. Matsuda^Toyota Tech. Inst., Japan*U.S. Naval Research Lab., USA"NASA Lewis Research Center, USA+Japan Energy Cent. Res. Ctr, Japan^ASDA, Japan

B-VIII-4 Radiation Response of InGaP/GaAs Single and(9:05) Dual-Junction Solar Cells 619

RJ. Walters*, S.R. Messenger**, H.L. Cotal*,G.P. Summers****, P.R. Sharps+,M.L.Timmons+,P. Iles~Y.CM.Yeh~•U.S. Naval Research Lab., USA"SFA, Inc., USA•••Univ. of Maryland Baltimore Country, USAResearch Triangle Inst, USAtecstar, Applied Solar Div., USA

B-VIII-5 High Efficiency A1G a As/Si Tandem Solar Cells(9:20) under Improved Growth Conditions 621

K. Baskar, T. Soga, T. Jimbo, M. UmenoNagoya Inst. of Tech., Japan

- - - Short Break

B-VIII-6 III-V and Thin-Film Photovoltaic TechnologiesInvited for Space Applications ~~~ 623(9:45) C. Hardingham

EEV Ltd., U.K.

B-VIII-7 Accurate On-Orbit Solar Cell Performance(10:05) Using the Environmental Work Bench and

Radiation Damage Models 627S. Bailey, R. Chock, H. CurtisNASA Lewis Research Center, USA

B-VIII-8 Flight Data of Solar Cell Monitor onInvited Engineering Test Satellite-VI and Ground Test(10:20) Data 629

O. Kawasaki, T. Hisamatsu, S. MatsudaNASDA, Japan

XXX

B-VHI-9 Radiation Degradation of Large Fluence(10:40) Irradiated Space Silicon Solar Cells 633

T. Hisamatsu, O. Kawasaki, S. Matsuda, T. Nakao^,Y. Wakow^NASDA, Japan•Advanced Eng. Services Corp., Japan

B-VIII-10 Mechanism for the Anomalous Degradation of(10:55) Si Solar Cells Induced by High Energy Proton

Irradiation 635M. Imaizumi, M. Yamaguchi, S.J. Taylor,S. Matsuda*, O. Kawasaki*, T. Hisamatsu*Toyota Tech. Inst., Japan•NASDA, Japan

--- Coffee Break - - -

Friday, 8:00-9:30 Tenyo

Session C-VII Amorphous Si Solar Cells and Materials(Device physics)

Chairpersons R.E.I. SchroppUtrecht Univ.

Y. IchikawaFuji Electric Corp.R.&D.,Ltd.

C-VII-1 Application of Real Time Spectroscopic(8:00) Ellipsometry for Characterizing the Structure

and Optical Properties of Component Layers ofAmorphous Semiconductor Solar Cells -—~ 637J. Koh, H. Fujiwara, C.R. Wronski, R.W. CollinsThe Pennsylvania State Univ., USA

C-VII-2 Optical Confinement in High-Efficiency a-Si(8:15) Solar Cells with Textured Surfaces 639

Y. Hishikawa, E. Maruyama, S. Yata, M. Tanaka,S. Kiyama, S. TsudaSanyo Electric Co., Ltd., Japan

C-VII-3 The Effects of Charged Defects on Light-(8:30) Induced Changes in a-Si:H Materials and Solar

Cell Structures 641L. Jiao, H. Liu, S. Semoushikina, Y. Lee,C.R. WronskiThe Pennsylvania State Univ., USA

C-VII-4 Light Induced Changes in Hydrogen Diluted a-(8:45) Si:H Materials and Solar Cells: A New

Perspective on Self-Consistent Analysis —~ 643Y. Lee, L. Jiao, H. Liu, Z. Lu, R.W. Collins,C.R. WronskiThe Pennsylvania State Univ., USA

C-VII-5 Deposition of (a-Si:H/a-Ge:H)n Multi-Layer(9:00) Films for Tandem Type Solar Cells 645

M. Sadamoto, H. Tanaka, N. Ishiguro,N. Yanagawa, S. FukudaMitui Toatsu Chemicals, Inc., Japan

C-VII-6 Current Matching in a-Si:H Alloy Tandem Cells(9:15) on Textured Substrates 647

M. Zeman, V.L Kuznetsov, L.L.A. Vosteen,J.A. Willemen, J.W. Metselaar, R.E.I. Schropp^Delft Univ. of Tech. - DIMES, The Netherlands•Utrecht Univ., The Netherlands

Friday, 9:45-11:00 Tenyo

Session C-VIII Amorphous Si Solar Cells and Materials(with Crystalline or Micro-Crystalline)

Chairpersons : C.R. WronskiPennsylvania StateUniv.

S. MiyazakiHiroshima Univ.

C-VIII-1 The Role of Atomic Hydrogen on the Surface(9:45) Reaction during the Deposition of Amorphous

Silicon 649A. Yamada, T. Oshima, M. KonagaiTokyo Inst. of Tech., Japan

C-VIII-2 Controlled Nucleation of Thin Mkrocrystalline(10:00) Layers for the Recombination Junction in a-Si

Stacked Cells 651N. Pellaton Vaucher, B. Rech^, D. Fischer,S. Dubail, M. Goetz, H. Keppner, C. Beneking4,O. Hadjadj", V. Shklover+, A. ShahUniv. of Neuchatel, Switzerland•Research Centre JQlich, Germany"Ecole Polytechnique, France"̂ ETH Zentrum, Switzerland

C-VIII-3 High Efficiency Thin-Film Silicon Solar Cells by(10:15) the "Micromorph" Concept 653

J. Meier, P. Torres, R. Platz, S. Dubail, U. Kroll,J.A. Anna Selvan, N. Pellaton Vaucher, Ch. Hof,D. Fischer, H. Keppner, A. Shah, K.-D. Ufert^Univ. ofNeuchatel, Switzerland•Siemens Solar, Germany

C-VIII-4 Atomic Scale Characterization of a-Si:H/a-(10:30) SiC:H Interface Structures 655

Y. Yoshida, Y. Miyoshi, S. Miyazaki, M. HiroseHiroshima Univ., Japan

C-VIII-5 Preparation of (n) a-Si:H/(p) c-Si Heterojunction(10:45) Solar Cells 657

D. Borchert, G. Grabosch, W.R. FahrnerUniv. of Hagen, Germany


Friday, 11:00-12:30 Tenju

Session P-II-D Poster Session - II

Fundamentals - II

P-H-D-l Structural Dependence on the Photoconductionand Photovoltaic Behavior of Merocyanine Dyes- II 659H.O. Yadav, T. S. Varadarajan, M. Mohanty^,B.N. Pattanaik^, L.N. Patnaik*Univ. Inst. of Chemical Tech., India•Ravenshaw College, India

P-II-D-2 Studyfor Improvement of Solar Cell Efficiencyby Impurity Photovoltaic Effect 661H. Kasai, H. MatsumuraJapan Advanced Inst. of Sci. and Tech., Japan

P-II-D-3 Optoelectrical Properties of SemiconductingCamphoric Carbon »_««..-._..._.—_._-._«.«—. 663K.M. Krishna, T. Soga, K. Mukhopadhyay*,M. Sharon*, M. UmenoNagoya Inst. of Tech., Japan•Indian Inst. of Tech., India

P-II-D-4 Photovoltaic Effect of 5, 10-DihydrophenazineDerivatives / Poly (3-Methylthiophene) OrganicTwo-Layer Diodes 665K. Uehara, K. Matsumoto, A. SugimotoOsaka Prefecture Univ., Japan

P-II-D-5 Application of Azo Compounds to Solar BatteryMaterials —.- . „.„ ™. 667K. Higashino, E. Ishiguro*, T .Nakaya"Aichi College of Tech., Japan*Univ. of the Ryukyus, Japan"Osaka City Univ., Japan

Crystalline Si Solar Cells and Materials - II

P-II-D-6 Determination of Carrier Diffusion Length inSolar Quality Silicon 669A. PatrinTech. Univ. of Koszalin, Poland

P-II-D-8 Ray-Tracing of Arbitrary Surface Textures forLight-Trapping in Thin Silicon Solar Cells

671D. Thorp, S.R. WenhamUniv. of New South Wales, Australia

P-II-D-9 Polycrystalline Silicon Deposited by LPCVD : AStudy of the Optical and Electrical Properties

. 673Y. Laghla, E. ScheidLab. d'Analyse et d'Architecture des Systems,France

P-II-D-10 Optical Properties of Alumina Ceramics as aSubstrate of Thin Film Solar Cells 675M. Tazawa, K. Yoshimura, K. Igarashi, S. TanemuraNational Ind. Research Inst. of Nagoya, Japan

P-II-D-11 Polycrystalline Silicon Thin Films Prepared byRapid Thermal CVD 677Z. Yuwen, L. Zhongming, H. Saoqi, L. Xianbo*,S. Shuran*, D. Lisheng*Beijing Solar Energy Research Inst., P.R. China•Chinese Academy of Sci., P.R. China

P-II-D-12 Improving the Qualityof Polycrystalline SiliconFilm™ Material by High TemperatureAnnealing _~.-~~._.-._~.™.™.-»«—.. 679H.E.A. Elgamel, M.G. Mauk^, A.M. Barnett^Cairo Univ., Egypt•AstroPower Inc., USA

P-II-D-13 Electrical CharacterizationSilicon Solar Cells

of VEST Thin. 6 8 1

R, Plieninger, H. Morikawa^, S. Arimoto^,P. Lolgen, M Wolf, R. Brendel, T. Ishihara^,K. Namba^, J.H. WernerMax-Planck-Institut fllr FestkOrperforschung,Germany•Mitsubishi Electric Corp., Japan

XXXI

P-II-D-14 Recrystallization of Polycrystalline Silicon Filmson Ceramics by Electron Beam „—...— _.— 683T. Takahashi, R. Shimokawa, Y. Matsumoto^,K. Ishii, T. SekigawaElectrotechnical Lab., Japan•Centra de Investigation de Estudios AvanzadosDel. I.P.N., Mexico

P-II-D-15 Characterization of Spray-on Titanium Dioxide(TiOi) Film for Solar Cell Processing 685A.U. Ebong, S.H. Lee, C.B. Honsberg*,S.R.Wenham*Samsung Advanced Inst. of Tech., Korea•Univ. of New South Wales, Australia

P-II-D-16 Surface Passivation at a S1O2 /n+-Layer Interface687

H. Takato, T. SekigawaElectrotechnical Lab, Japan

P-II-D-17 Collection Efficiency in Thin FilmMulticrystalline Silicon Cells 689A.-A.S. Al-Omar, M.Y. GhannamKuwait Univ., Kuwait

P-II-D-18 Electrical Neutralization of B Atoms inEpitaxial Si Films Grown at Very LowTemperature 691K. Abe, A. Yamada, M. KonagaiTokyo Inst. of Tech., Japan

P-II-D-19 Crystallization of Amorphous Silicon by RapidThermal Annealing with the Utilization ofAluminum _„——.„~___.~ —.693W. Ma, T. Hirade, N. Toyozawa, H. Okamoto,Y. Hamakawa*Osaka Univ., Japan•Ritsumeikan Univ., Japan

P-II-D-20 Effect of Hydrogen Radical Annealing forSiNi:H/SiO* Double-Layer Passivation 695H. Nagayoshi, M. JJceda, K. Okushima, T. Saitoh,K. KamisakoTokyo Univ. of Agri. and Tech., Japan

P-II-D-21 Analysis of the Effect of Hydrogen-RadicalAnnealing for S1O2 Passivation 697M. Dceda, H. Nagayoshi, Y. Onozawa, T. Saitoh,K. KamisakoTokyo Univ. of Agri. and Tech., Japan

P-II-D-22 PECVD Grown Silicon Nitride and ScreenPrinted Titanium Oxide as AntireflectionCoating on Silicon Solar Cells 699R. Kishore, S.N. Singh, B.K. DasNational Physical Lab., India

P-II-D-23 Low Surface Recombination of MinorityCarriers at uc-Si/c-Si Interfaces by HydrogenModification 701S. Otsuka, S. Muramatsu^, T. Warabisako^,T. SaitohTokyo Univ. of Agri. and Tech., Japan•Hitachi, Ltd., Japan

P-II-D-24 Characterization of Minority CarrierRecombination at S i d / S i Interface Oxidized atLow Temperature ~~_.-~™.™._._.__~_._._.™.. 703Y. Okamoto, K. Tsutsui*, T. Warabisako*,T. SaitohTokyo Univ. of Agri. and Tech., Japan•Hitachi, Ltd., Japan

P-II-D-26 Improvement of S i d / S i Interface Properties byAnnealing in Wet Atmosphere 705T. Sasaki, M. Satoh, A. Tajima, T. Mohri,T. Sameshima, T. SaitohTokyo Univ. of Agri. and Tech., Japan

Amorphous Si Solar Cells and Materials - II

P-II-D-27 Role of Plasma Deposition Temperature andPost-Deposition Annealing in Fabrication ofHigh Quality a-SiGe:H Alloys 707V I Kuznetsov, M. Zeman, L.L.A. Vosteen,B.S. Girwar, J.W. MetselaarDelft Univ. of Tech., The Netherlands

P-II-D-28 Stability of Hydrogenated Amorphous SiliconFilms Deposited at High Rate 709K. Lin, X. Lin, H. Wang, Y. Yu, W. Shi, M.Q. LiuShantou Univ., P.R. China

P-II-D-29 Electrical Properties of Cl IncorporatedHydrogenated Amorphous Silicon __„_._... 711K.H. Lee, SX. Kim, K.S. Lee, J.H. Choi, C.S. Kim,S.M. Pietruszko^, M. Kostana, J. JangKyung Hee Univ., Korea•Warsaw Univ. of Tech., Poland

P-II-D-30 Low Temperature Growth of MicrocrystallineSilicon by Using SiF* /H2 Plasma 713J.I. Ryu, H.C. Kim, B.Y. Ryu, J. JangKyung Hee Univ., Korea

P-II-D-31 Thermal Equilibration and Photocreation ofNeutral Dangling Bonds in a-Si:H Caused byFloating Bonds 715T. Shimizu, M Kumeda, T.NishinoKanazawa Univ., Japan

P-II-D-32 Comparative Study of Defect States in Light-Soaked and High-Temperature-Annealed a-Si:H

717M. Kumeda, M. Takeda, R. Durny, T. ShimizuKanazawa Univ., Japan

P-II-D-33 A Study of the Effects of Annealing and Out-Gassing of Hydrogenated Amorphous SiliconUsing Infrared Spectroscopy —......—.-.-„—.. 719P.J. Jennings, J.C.L. Cornish, B.W. Clare,G.T. Hefter, D.J. SantjojoMurdoch Univ., Australia

P-II-D-34 Deposition of Microcrystalline Silicon byElectron Beam Excited Plasma 721T. Sasaki, M. Ryoji#, Y. Ichikawa, M. Tohkai^Fuji Electric Corp. R.&D., Ltd., Japan•Kawasaki Heavy Ind., Ltd., Japan

xxxn

P-II-D-35 Application of Current DLTS Technique forStudy of Light Degradation in a-Si:H Solar Ceils

723V. Dutta^, A.R. Rubino, E. TerziniENEA-Centre for PV Research, Itary•Indian Inst. of Tech., India

P-II-D-36 Preparation of p-Microcrystalline Si Films withLowH2 Dilution Ratio from Photo-CVD Methodand Their Application to a-Si Solar Cells 725C.H. Lee, W.Y. Cho, J.H. Jang, K.S. LimKorea Advanced Inst. of Sci. and Tech., Korea

P-II-D-37 Numerical Analysis of the SecondaryPhotocurrent Transient Response in AmorphousSilicon 727P. Popovic, E. Bassanese, F. Smole, J. Furlan,S. Grebner^, R. Schwarz^Univ. of Ljubljana, Slovenia•Tech. Univ. of Munich, Germany

P-II-D-38 Analysis of Degraded a-Si:H p-i-n Solar Cells -The Role of Defect State Capture Cross-Sections

729F. Smole, M. Topic, A. Groznic, P. Popovic,J. FurlanUniv. of Ljubljana, Slovenia

P-II-D-39 Characterization of High-Quality a-SiC:H FilmsPrepared by Hydrogen-Radical CVD Method

731N. Andoh, H. Nagayoshi, T. Kanbashi,K. KamisakoTokyo Univ. of Agri. and Tech., Japan

P-II-D-40 Preparation of Very Stable and Low HydrogenContent Amorphous Silicon Films by Hydrogen-Radical CVD Method 733T. Tsuyuki, H. Nagayoshi, M. Kimura, L.-F. Lo,K. KamisakoTokyo Univ. of Agri. and Tech., Japan

P-II-D-41 Opto-Electrical Properties of a-Si:H Fabricatedfrom SiChm by ECR Hydrogen Plasma 735Y. Yamamoto, M. Hagino, I. ShimizuTokyo Inst. of Tech., Japan

CIS Materials and Cells - I I

P-II-D-42 Control of Valence States bya Codoping Methodin CuInS2 737T. Yamamoto*", H. Katayama-Yoshida^•Osaka Univ., Japan"Asahi Chemical Ind. Co., Ltd., Japan

P-II-D-43 Characterization of Ga-Se and In-Se BasedSemiconductors as Cd-Free Buffer Layer inCu(InGa)Se2 Thin Film Solar Cells 739T. Okamoto, A. Yamada, M. KonagaiTokyo Inst. of Tech., Japan

P-II-D-44 THM Growth and Characterization ofCuGaxIni-xSe2 Solid Solutions 741H. Miyake, T. Haginoya, K. SugiyamaMie Univ., Japan

P-II-D-45 Characterization of CuInS2 Thin Films Preparedby Sputtering from Binary Compounds ™~~ 743Y. Yamamoto, T. Yamaguchi*, T. Tanaka**,N. Tanahashi**, A. Yoshida**Fukui College of Tech, Japan*Wakayama College of Tech., Japan"Toyohashi Univ. of Tech., Japan

P-II-D-46 Preparation and Evaluation of CujZnSnS* ThinFilms by Sulfurization of E-B EvaporatedPrecursors _._. ——~.~ -..«-— 745H. Katagiri, N. Sasaguchi, S. Hando, S. Hoshino,J. Ohashi, T. YokotaNagaoka National College of Tech., Japan

P-II-D-47 Surface Photovoltage Measurement inPolycrystalline Semiconductor : Application toCdTe and CuInSe2 Based Devices 747A.K. Pal, A.B. Maity, J. Dutta, D. Bhattacharyya,S. ChaudhuriIndian Association for the Cultivation of Sci.,India

P-II-D-48 Non-Destructive Optical Technique for theEstimation of Stress in Polycrystalline FilmsDeposited on Absorbing Substrates . -„„._— 749S. Chaudhuri, A.B. Maity, D. Bhattacharyya,A.K. PalIndian Association for the Cultivation of Sci.,India

P-II-D-49 Deep Level Transient SpectroscopyZnO/CdS/CuGaxIm-xSe2 JunctionsW.W. Lam, L.S. Yip, J.E. Greenspan, I. ShihMcGill Univ., Canada

on751

P-II-D-50 Preparation of CuInS2 Films with SufficientSulfur Content and Excellent Morphology by OneStep Electrodeposition —_«~.__._.™ —— 753S. Nakamura, A. Yamamoto*Tsuyama National College of Tech., Japan•Fukui Univ., Japan

P-II-D-51 Analysis of Temperature and IlluminationDependencies of CIS Cell Performance 755M. Nishitani, N. Kohara, T. Negami, T. Wada,S. Igari#, R. Shimokawa"Matsushita Electric Ind. Co., Ltd., Japan•Japan Quality Assurance Org., Japan••Electrotechnical Lab., Japan

P-II-D-52 Chemical Bath Deposition of CdS Buffer Layerfor CIGS Solar Cells 757Y. Hashimoto, N. Kohara, T. Negami, N. Nishitani,T. WadaMatsushita Electric Ind. Co., Ltd., Japan

P-II-D-53 Cadmium Diffusion in CuInSe2 Thin Films

K.V. Reddy, A.P. KumarIndian Inst. of Tech., India

.759

P-II-D-54 Quantum Efficiency and AdmittanceSpectroscopy on Cu(In,Ga)Se2 Solar Cells

761J. Parisi, U. Rau, M. Schmitt, D. HilburgerUniv. of Bayreuth, Germany

xxxni

P-II-D-55 Microstructural Characterization ofHeteroepitaxial CuInSe2 and CuIuSes Layers

763M. Krejci, A.N. Tiwari, H. ZoggAFIF, Switzerland

P-II-D-56 Stability of Cu(In,Ga)Se2 Solar Cells andEvaluation by C-V Characteristics 765T. Kojima, T. Koyanagi, K. Nakamura,T. Yanagisawa, K. Takahisa, M.Nishitani+,T. Wada#

Electrotechnical Lab., Japan•Matsushita Electric Ind. Co., Ltd., Japan

P-II-D-57 CuInS:-Solar Cells with Absorber SequentiallySputtered and Reacted in Sulphur Vapour _.„ 767J. Bruns, J. Klaer, K. Topper, A. Chew-Walter,R. Henninger, R. Scheer, M. Weber, D. BraunigHahn-Meitner-Institut, Germany

P-II-D-58 Electrical Properties of Co evaporated CuInS:Thin Films 769R. Scheer, M. Alt, H.J. LewerenzHahn-Meitner-Institut Germany

P-II-D-59 Superstrate-Type CuInSe2 -Based Thin FilmSolar Cells by Low-Temperature Process UsingSodium Compounds ~~ _„_„„ ._„ 771T. Nakada, T. Kume, A. KuniokaAoyama Gakuin Univ., Japan

P-II-D-60 XPS Analysis of CdS/CuInSe: Heterojunctions773

Y. Okano, T. Nakada, A. KuniokaAoyama Gakuin Univ., Japan

P-II-D-62 Investigation of Solid State Pb Doped TiOi SolarCell 775Md. Mosaddeq-ur-Rahman, K.M. Krishna,T. Miki4, T. Soga, K. Igarashi*, S. Tanemura*,M. UmenoNagoya Inst. of Tech., Japan•National Ind. Research Inst. of Nagoya, Japan

ffl-V and Space Cells -II

P-II-D-63 Analysis of Impurity Diffusion from TunnelDiodes and Optimization for Operation inTandem Cells 777M. Okamoto, N. Kojima, S.J. Taylor, M-J. Yang,M. Yamaguchi, K. Takahashi^, T. Unno#

Toyota Tech. Inst., Japan•Hitachi Cable, Ltd., Japan

P-II-D-66 Material and Structural Parameter Dependenciesof Photon Recycling Effects in Conventional n+-pInP Solar Cell 783A. Yamamoto, Md.M. Murshid, M. Kurizuka,M. Ohkubo, A. HashimotoFukui Univ., Japan

P-II-D-67 Heavy Doping Characteristics of InGaP forHigh-Efficiency 2-Terminal Tandem Solar Cell

785K. Nakamura, T. Fuyuki, H. MatsunamiKyoto Univ., Japan

P-II-D-68 Study on GaAs/GaAIAs MQW Structure forPhotovoltaic Applications 787S. Sopitpan, U. Manmontri, S. Thainoi,P. Cheewatas, S. Rattanathammapan, S. PanyakeowChulalongkorn Univ., Thailand

P-II-D-69 Properties of Si, GaAs-on-Ge and GaAs-on-SiSolar Cells under Concentrated Sunlight 789M. Yang, M. Imaizumi, M. Yamaguchi, K. Izumi^,S. Matsunaga"Toyota Tech. Inst., Japan•IDEX, Japan"Aichi Pref. Ind. Tech. Center, Japan

P-II-D-70 Nitrogen Ion Modification to the Surface of InPby Flash Evaporation -~.-.~ 791H. Tanaka, H. Kubota, T. Ohgami, T. Itai, T. Sumita,Y. Honda, M. NagataKumamoto Univ., Japan

P-II-D-71 Improvement of Life Time of Minority Carriersin GaAs Epi-Layer Grown on Ge Substrate

793K. Takahashi, S. Yamada, R. Nakazono,Y. Minagawa, T. Matsuda, T. Unno, S. KumaHitachi Cable, Ltd., Japan

P-II-D-72 Thermal Stability of GaAs Tunnel JunctionsUsing Carbon as a p-Type Dopant 795S. Gotoh, T. Ueda, H. Kakinuma, M. AkiyamaOki Electric Industry Co., Ltd., Japan

P-II-D-73 Improved Uniformity of the Characteristics ofInGaP/GaAs Tandem Solar Cells in a Wafer

797E. Ikeda, T. Takamoto, H. Kurita, M. OhmoriJapan Energy Corp., Japan

.799

P-II-D-64 Optimizing GalliumQuantum Wells asPhotovoltaic Devices _.-_

Arsenide MultipleHigh Performance

779A. Thilagam, J. Singh, P. StulikNorthern Territory Univ., Australia

P-II-D-65 Numerical Analysis of Solar Cells withInGaAs/GaAs Multi-Quantum Wells underConcentrated Sunlight 781H. Ohtsuka, T. Kitatani, Y. Yazawa, T. WarabisakoHitachi, Ltd., Japan

P-II-D-74 GaSb Based Solar CellsS.V. Sorokina, MZ. Shvarts, V I Vasil'evRussian Academy of Sci., Russia

P-II-D-75 GaAs Based Solar Cells with Extremely Thin (2-8nm) Window Layers Fabricated by LowTemperature LPE 801V.P. Khvostikov, A.M. Mintairov,V.D. RumyantsevRussian Academy of Sci., Russia

P-II-D-76 Characterization of Vacuum-Evaporated TinSelenide for Solar Cell Materials 803Y. Tsukino, J. Noguchi, H. Tanamura,T. Nagatomo, O. OmotoShibaura Inst. of Tech., Japan

XXXIV

System Applications and Evaluation

P-II-D-77 Evaluation of Outdoor Performances inAmorphous Silicon and Polycrystalline SiliconPV Modules 805K. Akhmad, A. Kitamura^, F. Yamamoto^,H. Okamoto, H. Takakura", Y. Hamakawa"Osaka Univ., Japan•Kansai Electrical Power Inc., Japan"Ritsumeikan Univ., Japan

P-II-D-80 Evaluation of Equivalent Circuit Parameters ofPV Module and Its Application to Optimizationof PV System 807H. Kitazato, T. Ikegami, Y. Yamagata, K. EbiharaKumamoto Univ., Japan

and Other Off-Grid809

P-II-D-81 European RuralElectrifications .-G. RieschJoint Research Centre, Ispra, Italy

P-II-D-82 Healthy Industrial City in Centuary 21 UsingRenewable Energy Sources ™_._«._~~~.. ~~ 811F.H. FahmyElectronics Research Inst, Egypt

P-II-D-83 A Development of High Accuracy and WideRange Modular PV Array Simulator 813K. Takigawa, H. KobayashiCentral Research Inst. of Electric Power Ind., Japan

P-II-D-84 SPV - Diesel Hybrid Power Systems - A TechnoEconomic Analysis Based on a ProjectImplementation in India ._.„._........... .__. 815M.R. Narayanan, P. Jayakumar, C.V. Nayar*Modern Malleables Ltd., India•Curtin Univ. of Tech., Australia

P-II-D-85 A Study of Estimating the Generated Power onPhotovoltaic Power Generation System 817S. Ishihara, K. Harada, Y. Ishihara, T. TodakaDoshisha Univ., Japan

P-II-D-86 A Simulation of the Introduction of thePhotovoltaic Power Generation System to aPublic Institution - In the Case of TanabeCampus of Doshisha University -.___._»„__„819Y. Endo, K. Harada, Y. Ishihara, T. TodakaDoshisha Univ., Japan

P-II-D-87 Application of Utility Interactive PhotovoltaicPower Generation System for UPS 821S. Nonaka, K. HatadaKinki Univ., Japan

P-II-D-88 Photovoltaic Diesel-Generator Hybrid PowerSystem Sizing 823S.H. El-Hemawi, O. Mahgoub*, M.B. ZahranElectronics Research Inst., Egypt•Cairo Univ., Egypt

P-II-D-89 Remote Monitoring for PV-Diesel Hybrid Systemin Island Electrification in Korea .™_.~™-_.. 825M.-G. Lee, M.-W. Jung, I.-H. Hwang#

Korea Inst. of Energy Research, Korea•Korea Electric Power Research Inst., Korea

P-II-D-90 Study on Areal Solar Irradiance for AnalyzingAreally-Totalized PV Systems 827K. Otani. J. Minowa*, K. Kurokawa*Electrotechnical Lab., Japan•Tokyo Univ. of Agri. and Tech., Japan

P-II-D-92 Novel Application of Amorphous SiliconFlexible Solar Cell as Battery Charger forPersonnel Mobile Telephone 829D. Kruangam, B. Ratwises, T. Sujaridchai,S. PanyakeowChulalongkorn Univ., Thailand

P-II-D-93 ESTI-LOG:PV Plant Monitoring System _.C. Helmke, M. Lundqvist, H.A. OssenbrinkJoint Research Centre, Italy

.831

P-II-D-94 Application of Photovoltaic Systems for RuralElectrification at Remote Islands 833I. Hwang, J. Song#

Korea Electric Power Research Inst., Korea•Korea Inst. of Energy Research, Korea

P-II-D-95 500kW PV Power Plant. .835S.M. Karabanov, A.S. Tyutyunnik, E.V. KomarovGelion Ltd., Russia

P-II-D-96 Effect of Concentration Distribution on Low-Concentration Cell Performance with a NewThree-Dimensional Lens ._ _.__...._„...__.„_ 837S. Goma, K. Yoshioka, T. SaitohTokyo Univ. of Agri. and Tech., Japan

P-II-D-97 Operational Experience with the a-Si PV ElectricVehicle Inductive Charging Facility in SantaMonica California ................. .. ................ 839J.G. Ingersoll, C.A. Perkins^Helios International, Inc., USA•City of Santa Monica, USA

P-II-D-98 AC Side Harmonics Accompanying DC-Injection of Utility-Interactive PV System 841K. Akhmad, H. Okamoto, A. Kitamura*,H. Matsuda*, F. Yamamoto*, T.Miura*,T. Matsuoka*Osaka Univ., Japan*Kansai Electric Power Co., Inc., Japan

P-II-D-99 Analysis of Operating Efficiency forPhotovoltaic System of Remote Islands 843G.-B. Cho, H.-L. Baek, H.-S. Chung, M.-G. Lee*,M.-W. Jung*Chosun Univ., Korea•Korea Inst. of Energy Research, Korea

P4I-D-100 PV-Systems for Water Pumping in Libya.A.S. Kagilik, M.A. AltayefCenter for Solar Energy Studies, Libya

.845

P4I-D-101 The Sizing of Stand-Alone Photovoltaic PowerSystems 847K.O. Alamin, I.F. La-azebiCenter for Solar Energy Studies, Libya

P4I-D-102 On the Assessment of Stability Improvement ofPV / Conventional AC / DC Power System 849F.M. Ghali, M. Said Abdel-Moteleb,H.A. El-KhashabElectronics Research Inst, Egypt

XXXV

P4I-D-103 The Future of Photovoltaics-Telecommunications Integrated System (TIS)^.».~.~~.~~.™-_™.«.-.^-^.»^».»^«»«^.™^_..__.» 851J.H. Frost IIR.A. Energy Co., USA

Friday, 13:30-14:50 Tenran & Tengyoku

Friday, 11:00-12:30 Tenju

Session LN Late News

LN-1

LN-2

LN-3

LN-4

LN-5

LN-6

LN-7

LN-8

LN-9

LN-10

xxx vi

High Rate Deposition of Amorphous andMicrocrystalline Silicon Films by SiHiCh-SiH*-H2 Plasma 853H. Shirai, T. Arai, T. NakamuraSaitama Univ., Japan

Effects of Post-Deposition Treatment on the PL-Spectra and the Hydrogen Content of C11I11S2Absorber Layers ._._.____.„.__„._._„„ ._. 855K. TOpper, J. Krauser, J. Bruns, R. Scheer,A. Weidinger, D. BraunigHahn-Meitner-Institut Germany

Crystal Growth of CuGailm-iSez by HorizontalBridgman Method 857W.W. Lam, I. ShihMcGill Univ., Canada

Growth Mechanism and Characterization ofCu(InAl)Se2byVacum Evaporation 859F. Itoh, O. Saitoh, M. Kita, H. Nagamori, H. OikeGunma Univ., Japan

Temperature Dependence of PhotoacousticSpectra in CuInSe2 Thin Films Grown byMolecular Beam Epitaxy ™_ 861K. Yoshino, T. Shimizu, A. Fukuyama, K. Maeda,P.J. Fons^, A. YamaaV, S. Niki*, T. IkariMiyazaki Univ., Japan•Electrotechnical Lab., Japan

Window Layers for GaInP2 Solar Cells forTandem Space Cell Applications 863R.K. Jain, J. Lammasniemi*, R. Jaakkola*.A. Kazantsev*NASA Lewis Research Center, USA•Tampere Univ. of Tech., Finland

GalnP Single-Junction and GalnP/GaAs Two-Junction Thin-Film Solar Cell Structures byEpitaxial Lift-Off 865Y. Yazawa, K. Tamura, S. Watahiki, T. Kitatani,J. Minemura, T. WarabisakoHitachi, Ltd., Japan

Economic Studies on the Application of Grid-Connected Photovoltaic System in Taiwan _._ 867K.C. Hsu, W.J. ChangInd. Tech. Research Inst, Taiwan

The Use of Photovoltaic Generation System forTelecommunications Power Source „„._„..„_ 869T. Akai, T. Hidaka, M. Yoshida, Y. KawagoeNTT Power and Building Facilities Inc., Japan

Secular Degradation of Crystalline PhotovoltaicModules 871T. Hirasawa, K. Machida^, T. Yamazaki^Kandenko Co., Ltd., Japan•Tokyo Electric Power Co., Japan

Session PL-II Plenary Lecture -11

Chairpersons : H.A. OssenbrinkESTI

M. UmenoNagoya Inst. ofTech.

PL-II-1Invited(13:30)




Advances in Space Photovoltaic Technology

D.J. FloodNASA Lewis Research Center, USA

.873

World Renewable Energy Network (WREN) aMajor Institution for Renewable EnergyPromotion ._™.____™..̂ .-.«.™.~_._~._._™..™._ 877A. SayighDirector General of WREN, U.K.

.881Areal Evolution of PV Systems .__.__,K. KurokawaTokyo Univ. of Agri. and Tech., Japan

Cost Reduction in PV Manufacturing - Impacton Grid-Conected and Building IntegratedMarkets 885P.D. MaycockPV Energy Systems, Inc., USA

Friday, 14:50-15:50 Tenran & Tengyoku

CLOSING SESSION

Chairpersons : J. Song T. FuyukiKorea Inst. of Kyoto Univ.Energy Research

PVSEC Paper Award PresentationT. Saitoh, Program ChairpersonTokyo Univ. of Agri. and Tech.

Summary & Closing RemarksT. Saitoh, Program ChairpersonTokyo Univ. of Agri. and Tech.

9th international photovoltaic science and engineering … · 2007. 3. 16. · kyocera corp. site...

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