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Compound Semiconductor Devices and Circuits Committee

Giovanni GhioneCSDCTC Chair

EDS 2012 Mid-Year AdCom Meeting June 2-3Leuven, Belgium

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The committee

Giovanni Ghione Politecnico di TorinoSupriyo Bandyopadhyay Virginia Commonwealth Univ.Kevin Chen Hong Kong Univ. Of Science & TechnologyAlbert Chin National Chiao Tung University Suman Datta Pennsylvania State UniversityShadi A. Dayeh Los Alamos National LaboratoryLorenzo Faraone University of Western AustraliaGaudenzio Meneghesso University of PadovaRebecca J. Nikolic Lawrence Livermore National LibraryFan Ren University of FloridaMicheal Schlechtweg Fraunhofer Institute IAF

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What we do….

Regular meetingsConference review in the CS areaProposal for journal special issuesKeynote papers in the ED Society NewslettersAnything else?

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Special T-ED issue on GaN Electronic Devices

Guest Editors: Kevin J. Chen, Hong Kong University Of Science and

Technology, Hong KongTakashi Egawa, Nagoya Institute of Technology, Nagoya,

JapanGiovanni Ghione, Politecnico di Torino, ItalyGaudenzio Meneghesso, University of Padova, ItalyTomás Palacios, Massachusetts Institute of Technology,

Cambridge, USARuediger Quay, Fraunhofer, IAF, Germany

Paper Submission Deadline: April 30, 2013 Scheduled Publication Date: October, 2013

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Topics

Technology and materials: Development of bulk GaN wafers and homoepitaxial devices, Si-compatible GaN transistor technology, GaN on SiC technology, self-aligned GaN transistors, GaN-based E-D mixed-signal technologies, non-polar and N-Polar GaN, alternative alloys to AlGaN/GaN (e.g. InAlN/GaN, InAlGaN/GaN, InGaN channels), Heterogeneous integration of GaN and Si devices.Devices: High frequency GaN devices, GaN-based RF MMICs, GaN-based power switching devices, GaN RF switches, resonators and filters; sensors and actuators;Applications: High efficiency, high speed power switching applications of GaN-based devices; RF wave applications of GaN-based devices, including power, high-efficiency, high-gain and low-noise amplifiers, RF switches, mixers, oscillators, integrated circuits; mixed-signal applications.Modeling, simulation, reliability and characterization: Characterization and reliability of GaN devices, physics-based simulation of GaN –based alloys and devices, thermal management of GaN-based devices and circuits, circuit modeling of GaN-based active and passive IC devices, compact modeling of GaN transistors.

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Thanks!