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T15-5 STEM cross section InGaAs FET on Insulator (a), S/D region (b) and channel and gate oxide (c). Paper T15-5, “InGaAs-on-Insulator MOSFET Featuring Scaled Logic Devices and Record RF Performance” C.B. Zota, et al., IBM, Fraunhofer IAF.

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Page 1: vlsisymposium.org€¦ · Web viewT15-5 STEM cross section InGaAs FET on Insulator (a), S/D region (b) and channel and gate oxide (c). Paper T15-5, “ InGaAs-on-Insulator MOSFET

T15-5 STEM cross section InGaAs FET on Insulator (a), S/D region (b) and channel and gate oxide (c).

Paper T15-5, “InGaAs-on-Insulator MOSFET Featuring Scaled Logic Devices and Record RF Performance” C.B. Zota, et al., IBM, Fraunhofer IAF.

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