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The top documents of tung-ming-pan
ChemInform Abstract: High Quality Ultrathin CoTiO3 High-k Gate Dielectrics
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Physical and electrical characteristics of a high-k Yb2O3 gate dielectric
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Structural properties and electrical characteristics of high-k Dy2O3 gate dielectrics
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Structural properties and electrical characteristics of high-k Tm2Ti2O7 gate dielectrics
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Effects of oxygen content and postdeposition annealing on the physical and electrical properties of thin Sm2O3 gate dielectrics
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Structural and electrical properties of thin Ho2O3 gate dielectrics
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Physical and Electrical Properties of Dy2O3 and Dy2TiO5 Metal Oxide–High-κ Oxide–Silicon-Type Nonvolatile Memory Devices
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Structural properties and sensing characteristics of high-k Ho2O3 sensing film-based electrolyte–insulator–semiconductor
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Structural and electrical characteristics of a high-k Lu2O3 charge trapping layer for nonvolatile memory application
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Label-free detection of uric acid using a disposable poly-N-isopropylacrylamide as an encapsulating enzyme material based on high-κ Eu2Ti2O7 electrolyte–insulator–semiconductor
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Effect of postdeposition annealing on the structural and electrical properties of thin Dy2TiO5 dielectrics
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Characterization of ultrathin oxynitride (18-21 A) gate dielectrics by NH3 nitridation and N2O RTA treatment
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High-Performance High- SONOS-Type Flash Memory
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Effects of Plasma Treatment on the Electrical Characteristics of Poly-Silicon TFTs Using a Gate Dielectric
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Switching Behavior in Rare-Earth Films Fabricated in Full Room Temperature
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