trf3705 300-mhz to 4-ghz quadrature modulator datasheet

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TRF3705SLWS223B –AUGUST 2011–REVISED NOVEMBER 2015

TRF3705 300-MHz to 4-GHz Quadrature Modulator1 Features 3 Description

The TRF3705 is a low-noise direct quadrature1• High Linearity:

modulator, capable of converting complex modulated– Output IP3: 30 dBm at 1850 MHz signals from baseband or IF directly up to RF. The• Low Output Noise Floor: –160 dBm/Hz TRF3705 is a high-performance, superior-linearity

device that is ideal to up-convert to RF frequencies of• 78-dBc Single-Carrier WCDMA ACPR300 MHz (Note: appropriate matching network isat –10-dBm Channel Powerrequired for optimal performance at 300 MHz)• Unadjusted Carrier Suppression: –40 dBm through 4 GHz. The modulator is implemented as a

• Unadjusted Sideband Suppression: –45 dBc double-balanced mixer.• Single Supply: 3.3-V Operation The RF output block consists of a differential-to-• 1-bit Gain Step Control single-ended converter that is capable of driving a

single-ended 50-Ω load. The TRF3705 requires a• Fast Power-Up/Power-Down0.25-V common-mode voltage for optimum linearityperformance. The TRF3705 also provides a fast2 Applicationspower-down pin that can be used to reduce power

• Cellular Base Station Transmitter dissipation in TDD applications.• CDMA: IS95, UMTS, CDMA2000, TD-SCDMA The TRF3705 is available in an RGE-24 VQFN• LTE (Long Term Evolution) package.• TDMA: GSM, EDGE/UWC-136

Device Information(1)• Multicarrier GSM (MC-GSM)

PART NUMBER PACKAGE BODY SIZE (NOM)• Wireless MAN Wideband TransceiversTRF3705 VQFN (24) 4.00 mm x 4.00 mm

(1) For all available packages, see the orderable addendum atthe end of the data sheet.

Block Diagram

1

An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,intellectual property matters and other important disclaimers. PRODUCTION DATA.

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TRF3705SLWS223B –AUGUST 2011–REVISED NOVEMBER 2015 www.ti.com

Table of Contents7.1 Overview ................................................................. 221 Features .................................................................. 17.2 Functional Block Diagram ....................................... 222 Applications ........................................................... 17.3 Feature Description................................................. 223 Description ............................................................. 17.4 Device Functional Modes........................................ 224 Revision History..................................................... 2

8 Application and Implementation ........................ 235 Pin Configuration and Functions ......................... 38.1 Application Information .......................................... 236 Specifications......................................................... 48.2 Typical Application .................................................. 236.1 Absolute Maximum Ratings ..................................... 4

9 Power Supply Recommendations ...................... 296.2 ESD Ratings.............................................................. 410 Layout................................................................... 306.3 Recommended Operating Conditions....................... 4

10.1 Layout Guidelines ................................................. 306.4 Thermal Information .................................................. 410.2 Layout Example .................................................... 306.5 Electrical Characteristics: General ............................ 5

11 Device and Documentation Support ................. 316.6 Electrical Characteristics........................................... 611.1 Device Support .................................................... 316.7 Typical Characteristics: Single-Tone Baseband ..... 1011.2 Community Resources.......................................... 326.8 Typical Characteristics: Two-Tone Baseband ........ 1211.3 Trademarks ........................................................... 326.9 Typical Characteristics: Two-Tone Baseband, Mid-

Band Calibration ...................................................... 16 11.4 Glossary ................................................................ 326.10 Typical Characteristics: No Baseband .................. 18 12 Mechanical, Packaging, and Orderable6.11 Typical Characteristics: Two-Tone Baseband ...... 19 Information ........................................................... 32

7 Detailed Description ............................................ 22

4 Revision HistoryNOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision A (October 2011) to Revision B Page

• Added the ESD table, Detailed Description, Application and Implementation, Device and Documentation Support,Mechanical, Packaging, and Orderable Information............................................................................................................... 1

• Added Note 1 to Figure 65 ................................................................................................................................................... 23• Changed the X-axis label of Figure 75 From: Frequency (MHz) To: LO Power (dBm) ....................................................... 28• Changed Figure 77............................................................................................................................................................... 32

Changes from Original (August 2011) to Revision A Page

• Changed the device From: Preview To: Production............................................................................................................... 1

2 Submit Documentation Feedback Copyright © 2011–2015, Texas Instruments Incorporated

Product Folder Links: TRF3705


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PD

GND

LOP

LOM

GND

GC

VCC

GND

RFOUT

GND

GND

GND

Thermal Pad

VC

CG

ND

GN

DG

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BB

IMB

BQ

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IPB

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TRF3705www.ti.com SLWS223B –AUGUST 2011–REVISED NOVEMBER 2015

5 Pin Configuration and Functions

RGE Package24 Pin VQFN

Top View

Pin FunctionsPIN

I/O DESCRIPTIONNO. NAME1 PD I Power-down digital input (high = device off)2 GND I Ground3 LOP I Local oscillator input4 LOM I Local oscillator input5 GND I Ground6 GC I Gain control digital input (high = high gain)7 GND — Ground or leave unconnected8 GND I Ground9 BBQM I In-quadrature input10 BBQP I In-quadrature input11 GND I Ground12 GND I Ground13 GND I Ground14 GND I Ground15 GND I Ground16 RFOUT O RF output17 GND I Ground18 VCC I Power supply19 GND I Ground20 GND I Ground21 BBIP I In-phase input22 BBIM I In-phase input23 GND I Ground24 VCC I Power supply

Copyright © 2011–2015, Texas Instruments Incorporated Submit Documentation Feedback 3



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6 Specifications

6.1 Absolute Maximum Ratings (1)

Over operating free-air temperature range (unless otherwise noted).MIN MAX UNIT

Supply voltage range (2) –0.3 6 VDigital I/O voltage range –0.3 VCC + 0.5 VOperating virtual junction temperature range, TJ –40 150 °COperating ambient temperature range, TA –40 85 °CStorage temperature range, Tstg –65 150 °C

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratingsonly, and functional operation of the device at these or any other conditions beyond those indicated under recommended operatingconditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) All voltage values are with respect to network ground terminal.

6.2 ESD RatingsVALUE UNIT

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001 (1) ±4000V(ESD) Electrostatic discharge VCharged-device model (CDM), per JEDEC specification JESD22- ±250C101 (2)

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. .(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating ConditionsOver operating free-air temperature range (unless otherwise noted).

MIN NOM MAX UNITVCC Power-supply voltage 3.15 3.3 3.6 V

6.4 Thermal InformationTRF3705

THERMAL METRIC (1) RGE (VQFN) UNIT24 PINS

RθJA Junction-to-ambient thermal resistance 38.4 °C/WRθJC(top) Junction-to-case (top) thermal resistance 42.5 °C/WRθJB Junction-to-board thermal resistance 16.6 °C/WψJT Junction-to-top characterization parameter 0.9 °C/WψJB Junction-to-board characterization parameter 16.6 °C/WRθJC(bot) Junction-to-case (bottom) thermal resistance 6.6 °C/W

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics applicationreport, SPRA953.




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6.5 Electrical Characteristics: GeneralOver recommended operating conditions; at power supply = 3.3 V and TA = +25°C, unless otherwise noted.

PARAMETERS TEST CONDITIONS MIN TYP MAX UNIT

DC PARAMETERS

TA = +25°C, device on (PD = low) 306 mAICC Total supply current

TA = +25°C, device off (PD = high) 35 μA

LO INPUT

LO low frequency 300 MHz

fLO LO high frequency 4000 MHz

LO input power –10 0 +15 dBm

BASEBAND INPUTS

I and Q input dc common-modeVCM 0.25 0.5 Vvoltage

BW 1-dB input frequency bandwidth 1000 MHz

Resistance 8 kΩZI Input impedance

Parallel capacitance 4.6 pF

POWER ON/OFF

Turn on time PD = low to 90% final output power 0.2 μs

Turn off time PD = high to initial output power –30 dB 0.2 μs

DIGITAL INTERFACE

VIH PD high-level input voltage 2 V

VIL PD low-level input voltage 0.8 V




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6.6 Electrical CharacteristicsOver recommended operating conditions; at power supply = 3.3 V, TA = +25°C, VCM = 0.25 V; LO Power = 0 dBm, single-ended (LOP); GC set low, VIN BB = 1.0 VPP (diff) in quadrature, and fBB = 5.5 MHz, standard broadband output matchingcircuit, unless otherwise noted.


fLO = 400 MHz

Output RMS voltage over input I (or Q) RMS –4.7 dBvoltage, GC set lowG Voltage gain

Output RMS voltage over input I (or Q) RMS –1.9 dBvoltage, GC set high

GC set low –0.7 dBmPOUT Output power

GC set high 2.1 dBm

GC set low 8.5 dBmP1dB Output compression point

GC set high 9.1 dBm

fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low 26 dBmIP3 Output IP3

fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high 25.4 dBm

Measured at fLO + (fBB1± fBB2), GC set low 60.2 dBmIP2 Output IP2

Measured at fLO + (fBB1± fBB2), GC set high 61.9 dBm

SBS Unadjusted sideband suppression –57.4 dBc

Measured at LO frequency –51.6 dBm

CF Unadjusted carrier feedthrough Measured at 2 x LO –50 dBm

Measured at 3 x LO –49 dBm

Output noise floor DC only to BB inputs; 10-MHz offset from LO –166.7 dBm/Hz

Measured with ±1-MHz tone at 0.5 VPP eachHD2BB Baseband harmonics –67 dBcat fLO ±(2 x fBB)


fLO = 750 MHz

Output RMS voltage over input I (or Q) RMS 0.2 dBvoltage, GC set lowG Voltage gain

Output RMS voltage over input I (or Q) RMS 3.0 dBvoltage, GC set high

GC set low 4.2 dBmPOUT Output power

GC set high 7 dBm


GC set high 13.9 dBm

fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low 31.5 dBmIP3 Output IP3







Measured at 3 x LO –53.5 dBm







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Electrical Characteristics (continued)Over recommended operating conditions; at power supply = 3.3 V, TA = +25°C, VCM = 0.25 V; LO Power = 0 dBm, single-ended (LOP); GC set low, VIN BB = 1.0 VPP (diff) in quadrature, and fBB = 5.5 MHz, standard broadband output matchingcircuit, unless otherwise noted.


fLO = 900 MHz




GC set high 7.1 dBm














fLO = 1840 MHz




GC set high 6.5 dBm






Measured at fLO + (fBB1± fBB2), GC set high 62 dBm











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fLO = 2140 MHz




GC set high 6.9 dBm














fLO = 2600 MHz


Output RMS voltage over input I (or Q) RMS 2 dBvoltage, GC set high


GC set high 5.6 dBm



fBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set low 28 dBmIP3 Output IP3

FfBB1 = 4.5 MHz; fBB2 = 5.5 MHz; GC set high 27.2 dBm



SBS Unadjusted sideband suppression –52.9 dBm










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fLO = 3500 MHz

Output RMS voltage over input I (or Q) RMS –1 dBvoltage, GC set lowG Voltage gain


GC set low 3 dBmPOUT Output power

GC set high 5.8 dBm







SBS Unadjusted sideband suppression –45.2 dBm










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VCC = 3.15 VVCC = 3.30 VVCC = 3.45 V

G003


6.7 Typical Characteristics: Single-Tone BasebandVCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 5.5 MHz; baseband I/Q amplitude = 1-VPP differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless otherwise noted.

Figure 1. Output Power vs LO Frequency (fLO) and Figure 2. Output Power vs LO Frequency (fLO) and SupplyTemperature Voltage

Figure 3. Output Power vs LO Frequency (fLO) Over LO Figure 4. Output Power vs LO Frequency (fLO) and GainDrive Level Select Setting

Figure 5. Output Power vs LO Frequency (fLO) and Figure 6. Output Power vs Baseband Voltage at 2140 MHzTemperature at VCM = 0.5 V




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VCM = 0.5 V

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VCC = 3.15 VVCC = 3.30 VVCC = 3.45 V

G007


Typical Characteristics: Single-Tone Baseband (continued)VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 5.5 MHz; baseband I/Q amplitude = 1-VPP differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unless otherwise noted.

Figure 7. P1dB vs LO Frequency (fLO) and Temperature Figure 8. P1dB vs LO Frequency (fLO) and Supply Voltage

Figure 9. P1dB vs LO Frequency (fLO) and LO Drive Level Figure 10. P1dB vs LO Frequency (fLO) and Gain SelectSetting

Figure 11. P1dB vs LO Frequency (fLO) and Temperature AT VCM = 0.5 V




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1012141618202224262830323436

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OIP

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TA = −40°CTA = 25°CTA = 85°C

VCM = 0.5 V

G014

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OIP

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TA = −40°CTA = 25°CTA = 85°C

G016

1012141618202224262830323436

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OIP

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G015

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OIP

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TA = −40°CTA = 25°CTA = 85°C

G011

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OIP

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VCC = 3.15 VVCC = 3.30 VVCC = 3.45 V

G012


6.8 Typical Characteristics: Two-Tone BasebandVCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Qamplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unlessotherwise noted.

Figure 12. OIP3 vs LO Frequency (fLO) and Temperature Figure 13. OIP3 vs LO FRequency (fLO) anD Supply Voltage

Figure 14. OIP3 vs LO Frequency (fLO) and LO Drive Level Figure 15. OIP3 vs LO Frequency (fLO) And Gain SelectSetting

Figure 16. OIP3 vs LO Frequency (fLO) and Temperature AT Figure 17. OIP2 vs LO Frequency (fLO) and TemperatureVCM = 0.5 V




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TA = −40°CTA = 25°CTA = 85°C

G021

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253035404550556065707580859095

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OIP

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OIP

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TA = −40°CTA = 25°CTA = 85°C

VCM = 0.5 V

G019

253035404550556065707580859095

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OIP

2 (d

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VCC = 3.15 VVCC = 3.30 VVCC = 3.45 V

G017

253035404550556065707580859095

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OIP

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G018


Typical Characteristics: Two-Tone Baseband (continued)VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Qamplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unlessotherwise noted.

Figure 18. OIP2 vs LO Frequency (fLO) and Supply Voltage Figure 19. OIP2 vs LO Frequency (fLO) and LO Drive Level

Figure 20. OIP2 vs LO Frequency (fLO) and Gain Select Figure 21. OIP2 vs LO Frequency (fLO) and Temperature ATSetting VCM = 0.5 V

Figure 22. Unadjusted Carrier Feedthrough vs LO Figure 23. Unadjusted Carrier Feedthrough vs LOFrequency (fLO) and Temperature Frequency (fLO) and Supply Voltage




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VCM = 0.5 V

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Adjusted at TA = 25°CDevice Count = 10

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Figure 24. Unadjusted Carrier Feedthrough vs LO Figure 25. Unadjusted Carrier Feedthrough vs LOFrequency (fLO) and LO Drive Level Frequency (fLO) and Gain Select Setting

Figure 26. Unadjusted Carrier Feedthrough vs LO Figure 27. Carrier Feedthrough vs LO Frequency (fLO) andFrequency (fLO) and Temperature at VCM = 0.5 V Temperature After Nulling at 25°C; Multiple Devices

Figure 28. Unadjusted Sideband Suppression vs LO Figure 29. Unadjusted Sideband Suppression vs LOFrequency (fLO) and Temperature Frequency (fLO) and Supply Voltage




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−70−65−60−55−50−45−40−35−30−25−20−15−10

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VCM = 0.5 V

G029

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G028

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G030



Figure 30. Unadjusted Sideband Suppression vs LO Figure 31. Unadjusted Sideband Suppression vs LOFrequency (fLO) and LO Drive Level Frequency (fLO) and Gain Select Setting

Figure 32. Unadjusted sideband Suppression vs LO Frequency (fLO) and Temperature at VCM = 0.5 V




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Adj

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Adjusted at 2600MHz − TA = 25°C

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G041

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dBm

) TA = −40°CTA = 25°CTA = 85°C


G038

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2060 2080 2100 2120 2140 2160 2180 2200 2220Frequency (MHz)

Adj

uste

d C

arrie

r F

eedt

hrou

gh (

dBm

) TA = −40°CTA = 25°CTA = 85°C


G039

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680 700 720 740 760 780 800 820Frequency (MHz)

Adj

uste

d C

arrie

r F

eedt

hrou

gh (

dBm

) TA = −40°CTA = 25°CTA = 85°C


G036

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870 890 910 930 950 970 990 1010Frequency (MHz)

Adj

uste

d C

arrie

r F

eedt

hrou

gh (

dBm

) TA = −40°CTA = 25°CTA = 85°C

Adjusted at 942.5MHz − TA = 25°C

G037


6.9 Typical Characteristics: Two-Tone Baseband, Mid-Band CalibrationVCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Qamplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unlessotherwise noted. Single point adjustment mid-band.

Figure 33. Adjusted Carrier Feedthrough vs LO Frequency Figure 34. Adjusted Carrier Feedthrough vs LO Frequencyand Temperature (750 LTE Band) and Temperature (GSM900 Band)

Figure 35. Adjusted Carrier Feedthrough vs LO Frequency Figure 36. Adjusted carrier Feedthrough vs LO Frequencyand Temperature (PCS Band) and Temperature (UMTS Band)

Figure 37. Adjusted Carrier Feedthrough vs LO Frequency Figure 38. Adjusted Carrier Feedthrough vs LO Frequencyand Temperature (2.6 GHz LTE Band) and Temperature (WiMAX/LTE Band)




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2500 2525 2550 2575 2600 2625 2650 2675 2700Frequency (MHz)

Adj

uste

d S

ideb

and

Sup

pres

sion

(dB

c) TA = −40°CTA = 25°CTA = 85°C


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3400 3425 3450 3475 3500 3525 3550 3575 3600Frequency (MHz)

Adj

uste

d S

ideb

and

Sup

pres

sion

(dB

c) TA = −40°CTA = 25°CTA = 85°C


G047

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1880 1900 1920 1940 1960 1980 2000 2020 2040Frequency (MHz)

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uste

d S

ideb

and

Sup

pres

sion

(dB

c) TA = −40°CTA = 25°CTA = 85°C


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Adj

uste

d S

ideb

and

Sup

pres

sion

(dB

c) TA = −40°CTA = 25°CTA = 85°C


G045

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680 700 720 740 760 780 800 820Frequency (MHz)

Adj

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d S

ideb

and

Sup

pres

sion

(dB

c) TA = −40°CTA = 25°CTA = 85°C


G042

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870 890 910 930 950 970 990 1010Frequency (MHz)

Adj

uste

d S

ideb

and

Sup

pres

sion

(dB

c) TA = −40°CTA = 25°CTA = 85°C

Adjusted at 942.5MHz − TA = 25°C

G043


Typical Characteristics: Two-Tone Baseband, Mid-Band Calibration (continued)VCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Qamplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unlessotherwise noted. Single point adjustment mid-band.

Figure 39. Adjusted Sideband Suppression vs LO Figure 40. Adjusted Sideband Suppression vs LOFrequency and Temperature (750 LTE Band) Frequency and Temperature (GSM900 Band)

Figure 41. Adjusted Sideband Suppression vs LO Figure 42. Adjusted Sideband Suppression vs LOFrequency and Temperature (PCS Band) Frequency and Temperature (UMTS Band)

Figure 43. Adjusted Sideband Suppression vs LO Figure 44. Adjusted Sideband Suppression vs LOFrequency and Temperature (2.6 GHz LTE Band) Frequency and Temperature (WiMAX/LTE Band)




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−144

−25 −20 −15 −10 −5 0 5 10RF Output Power (dBm)

RF

Out

put N

oise

Flo

or (

dBm

/Hz)

LO Freq = 948.5 MHzLO Freq = 1848 MHzLO Freq = 2167 MHz

G034

−170−168−166−164−162−160−158−156−154−152−150−148−146−144−142−140

0 500 1000 1500 2000 2500 3000 3500 4000Frequency (MHz)

RF

Out

put N

oise

Flo

or (

dBm

/Hz)


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−170−168−166−164−162−160−158−156−154−152−150−148−146−144−142−140

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RF

Out

put N

oise

Flo

or (

dBm

/Hz)


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−170−168−166−164−162−160−158−156−154−152−150−148−146−144−142−140

0 500 1000 1500 2000 2500 3000 3500 4000Frequency (MHz)

RF

Out

put N

oise

Flo

or (

dBm

/Hz)

TA = −40°CTA = 25°CTA = 85°C

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−170−168−166−164−162−160−158−156−154−152−150−148−146−144−142−140

0 500 1000 1500 2000 2500 3000 3500 4000Frequency (MHz)

RF

Out

put N

oise

Flo

or (

dBm

/Hz)

VCC = 3.15 VVCC = 3.30 VVCC = 3.45 V

G032


6.10 Typical Characteristics: No BasebandVCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); and input baseband ports terminated in 50 Ω, unlessotherwise noted.

Figure 45. Output noisE vs LO Frequency (fLO) and Figure 46. Output Noise vs LO Frequency (fLO) and SupplyTemperature Voltage

Figure 47. Output Noise vs LO Frequency (fLO) AND LO Figure 48. OUtput Noise vs LO Frequency (fLO) and GainDrive Level Select Setting

Figure 49. Output Noise vs Output Power




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290 295 300 305 310 315 320 325290 295 300 305 310 315 320 3250

5

10

15

20

25

30

35

40

Total Icc (mA)

Dis

trib

utio

n (%

)

Mean =304.2 mAStDev = 5.1TA = 25°C

G064

27.5 28 28.5 29 29.5 30 30.527.5 28 28.5 29 29.5 30 30.50

5

10

15

20

25

30

35

40

45

50

OIP3 (dBm)

Dis

trib

utio

n (%

)

Mean = 28.6 dBmStDev = 0.4

G050

290 295 300 305 310 315 320 325290 295 300 305 310 315 320 3250

5

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15

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45

50

55

60

Total Icc (mA)

Dis

trib

utio

n (%

)

Mean =306.4 mAStDev = 4.4Vcc = 3.3 VTA = 25°C

G065

290 295 300 305 310 315 320 325290 295 300 305 310 315 320 3250

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25

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35

40

Total Icc (mA)

Dis

trib

utio

n (%

)Mean =303.8 mAStDev = 6.9Vcc = 3.3 V

G063

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0

10

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RF

Har

mon

ic (

dBc)

RF 2nd HarmonicRF 3rd HarmonicRF 4th Harmonic

G048

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10

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LO H

arm

onic

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m)

LO 2nd HarmonicLO 3rd HarmonicLO 4th Harmonic

G049


6.11 Typical Characteristics: Two-Tone BasebandVCC = 3.3 V; TA = 25°C; LO = 0 dBm, single-ended drive (LOP); I/Q frequency (fBB) = 4.5 MHz, 5.5 MHz; baseband I/Qamplitude = 0.5-VPP/tone differential sine waves in quadrature with VCM = 0.25 V; and broadband output match, unlessotherwise noted.

Figure 50. RF Harmonics vs LO FRequency (fLO) Figure 51. LO Harmonics vs LO Frequency (fLO)

Figure 52. Nominal Current Consumption Distribution Figure 53. Current Consumption Distribution OverTemperature

Figure 54. Current Consumption Distribution Over VCC Figure 55. OIP3 Distribution at fLO = 2140 MHz




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31.2 31.4 31.6 31.8 32 32.2 32.431.2 31.4 31.6 31.8 32 32.2 32.40

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50

OIP3 (dBm)

Dis

trib

utio

n (%

)


G055

69 69.5 70 70.5 71 71.5 72 72.5 73 73.5 7469 69.5 70 70.5 71 71.5 72 72.5 73 73.5 740

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45

OIP2 (dBm)

Dis

trib

utio

n (%

)


G056

−52 −51 −50 −49 −48 −47 −46 −45 −44 −43 −42 −41−52 −51 −50 −49 −48 −47 −46 −45 −44 −43 −42 −410

5

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15

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25

30

Unadjusted Sideband Suppression (dBc)

Dis

trib

utio

n (%

)

Mean = −45.6 dBcStDev = 1.4

G053

−43 −42 −41 −40 −39 −38 −37 −36−43 −42 −41 −40 −39 −38 −37 −360

5

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15

20

25

30

35

40

45

Unadjusted Carrier Feedthrough (dBm)

Dis

trib

utio

n (%

)Mean = −39.3 dBmStDev = 0.8

G054

62.5 63 63.5 64 64.5 65 65.5 66 66.5 67 67.5 6862.5 63 63.5 64 64.5 65 65.5 66 66.5 67 67.5 680

5

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15

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25

30

OIP2 (dBm)

Dis

trib

utio

n (%

)


G051

12.8 12.9 13 13.1 13.2 13.3 13.4 13.512.8 12.9 13 13.1 13.2 13.3 13.4 13.50

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Dis

trib

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n (%

)


G052



Figure 56. OIP2 Distribution at fLO = 2140 MHz Figure 57. P1dB Distribution at fLO = 2140 MHz, fBB = 5.5MHz

Figure 58. Unadjusted Sideband Suppression DIstribution at Figure 59. Unadjusted Carrier Feedthrough Distribution atfLO = 2140 MHz fLO = 2140 MHz

Figure 60. OIP3 Distribution at fLO = 900 MHz Figure 61. OIP2 Distribution at fLO = 900 MHz




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−85 −80 −75 −70 −65 −60 −55 −50 −45 −40 −35−85 −80 −75 −70 −65 −60 −55 −50 −45 −40 −350

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Dis

trib

utio

n (%

)

Mean = −48.5 dBmStDev = 4.9

G059

12.9 13 13.1 13.2 13.3 13.4 13.5 13.612.9 13 13.1 13.2 13.3 13.4 13.5 13.60

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55

P1dB (dBm)

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trib

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)


G057

−48 −47 −46 −45 −44 −43 −42 −41 −40−48 −47 −46 −45 −44 −43 −42 −41 −400

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Dis

trib

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n (%

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Mean = −43.8 dBcStDev = 0.9

G058



Figure 62. P1dB distribution at fLO = 900 MHz, fBB = 5.5 MHz Figure 63. Unadjusted Sideband Suppression Distribution atfLO = 900 MHz

Figure 64. Unadjusted Carrier Feedthrough Distribution at fLO = 900 MHz




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PD

GND

LOP

LOM

GND

GC

VCC

GND

RFOUT

GND

GND

GND

VC

CG

ND

GN

DG

ND

BB

IMB

BQ

M

BB

IPB

BQ

P

GN

DG

ND

GN

DG

ND

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2

3

4

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6

7 8 9 10

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18

17

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13

24

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19

S0/90


7 Detailed Description

7.1 OverviewTRF3705 is a low-noise direct quadrature modulator with high linearity, capable of converting complex modulatedsignals from baseband or IF directly to RF. With high-performance and superior-linearity , TRF3705 is an idealdevice to up-convert to RF frequencies of 300 MHz through 4 GHz. With appropriate matching network, optimalperformance can be obtained. The modulator is implemented as a double-balanced mixer.

TRF3705 has a RF output block which consists of a differential-to-single-ended converter that is capable ofdirectly driving a single-ended 50-Ω load. The TRF3705 requires a 0.25-V common-mode voltage for optimallinearity performance. With a fast power-down pin, TRF3705 can be used to reduce power dissipation in TDDapplication

7.2 Functional Block Diagram

7.3 Feature Description

7.3.1 Gain Control FeatureTRF3705 has a specific GC pin which is used for gain control. The GC pin is gain control digital input which isinternally pulled down. When driving low or left open, modulator is in low gain mode. With driving high externally,the modulator is in high gain mode. This 1 bit gain step control feature offers a typical 3-dB gain increase in highgain mode. If power optimization is desired, driving this pin low can easily put the modulator into low gain mode.

7.4 Device Functional Modes

7.4.1 Power Down ModeTRF3705 features a PD pin to power down the modulator. The PD pin is internally pulled down. When the power-down digital input pin is driven high, the device is off. This feature provides a fast power-down which can be usedto reduce power dissipation in time division duplexing applications.




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PD

GND

LOP

LOM

GND

GC

VCC

GND

RFOUT

GND

GND

GND

Thermal Pad

VC

CG

ND

GN

DG

ND

BB

IMB

BQ

M

BB

IPB

BQ

P

GN

DG

ND

GN

DG

ND

1

2

3

4

5

6

7 8 9 10

11

12

18

17

16

15

14

13

24

23

22

21

20

19

6.8 pF

0.2 pF

RF

Output

LO

Input

BBI

BBQ

49.9 W

49.9 W 49.9 W

49.9 W 49.9 W


8 Application and Implementation

NOTEInformation in the following applications sections is not part of the TI componentspecification, and TI does not warrant its accuracy or completeness. TI’s customers areresponsible for determining suitability of components for their purposes. Customers shouldvalidate and test their design implementation to confirm system functionality.

8.1 Application InformationTRF3705 is a quadrature modulator for up-converting the in-phase (I) and the quadrature-phase (Q) signals toradio frequency (RF) in the transmit chain. Typically, the device is used between the digital-to-analog converter(DAC) and the RF power amplifier.

8.2 Typical Application

(1) Pin 1 (PD) and Pin 6 (GC) are internally pulled down.

Figure 65. Typical Application Circuit




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Typical Application (continued)8.2.1 Design RequirementsFor this design example, use the parameters shown in Table 1.

Table 1. Pin Termination Requirements and LimitationsNAME PIN NO DESCRIPTION

Base-band in-quadrature input: negative terminal. Input impedance is 8 KΩ//4.6 pF. Optimal linearity isBBQM 9 obtained if VCM is 0.25 V. Normally terminated in 50 ΩBase-band in-quadrature input: positive terminal. Input impedance is 8 KΩ//4.6 pF. Optimal linearity isBBQP 10 obtained if VCM is 0.25 V. Normally terminated in 50 ΩLocal oscillator input: positive terminal. This is preferred port when driving single ended. Normally ACLOP 3 coupled and terminated in 50 ΩLocal oscillator input: negative terminal. When driving LO single-ended, normally AC coupled andLOM 4 terminated in 50 Ω.

RFOUT 16 RF output. Normally using optimal matching circuits to match RF output to 50 Ω. Normally AC coupled.Gain control digital input. Internally pulled down. When driving high, get 3 dB gain increase of RFGC 6 output.

PD 1 Power down digital input. Internally pulled down. When driving high, the modulator is off.3.3-V power supply. Can be tied together and source from a single clean supply. Each pin should beVCC 18,24 properly RF bypassed and decoupled.

8.2.2 Detailed Design Procedure

8.2.2.1 Baseband InputsThe baseband inputs consist of the in-phase signal (I) and the Quadrature-phase signal (Q). The I and Q linesare differential lines that are driven in quadrature. The nominal drive level is 1-VPP differential on each branch.

The baseband lines are nominally biased at 0.25-V common-mode voltage (VCM); however, the device canoperate with a VCM in the range of 0 V to 0.5 V. The baseband input lines are normally terminated in 50 Ω,though it is possible to modify this value if necessary to match to an external filter load impedance requirement.

8.2.2.2 LO InputThe LO inputs can be driven either single-ended or differentially. There is no significant performance differencebetween either option with the exception of the sideband suppression. If driven single-ended, either input can beused, but LOP (pin 3) is recommended for best broadband performance of sideband suppression. When drivingin single-ended configuration, simply ac-couple the unused port and terminate in 50 Ω. The comparison of thesideband suppression performance is shown in Figure 71 for driving the LO single-ended from either pin and fordriving the LO input differentially.

8.2.2.3 RF OutputThe RF output must be ac-coupled and can drive a 50-Ω load. The suggested output match provides the bestbroadband performance across the frequency range of the device. It is possible to modify the output match tooptimize performance within a selected band if needed. The optimized matching circuits are to match the RFoutput impedances to 50 Ω.

Figure 72 shows a slightly better OIP3 performance at the frequency above 1850 MHz with an 0.2-pF matchingcapacitor.




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50 W50 W

50 W50 W

50 W50 W

50 W50 W

DAC348x

TRF3705

S0/90

LO

PD

GND

LOP

LOM

GND

GC

VCC

GND

RFOUT

GND

GND

GND

1

2

3

4

5

6

18

17

16

15

14

13

39 pF

18 pF2.2 pF

RF

Output

LO

Input

49.9 W

180 pF 40 nH


8.2.2.4 350-MHz OperationA different matching circuit, as shown in Figure 66, could also be applied to improve the performance for thefrequency from 300 MHz to 400 MHz.

Figure 66. Matching Components for Operation Centered at 350 MHz

Figure 73 and Figure 74 show a slight improvement in OIP3 performance at frequencies above 1850 MHz withan 0.2-pF matching capacitor.

8.2.2.5 DAC to Modulator Interface NetworkFor optimum linearity and dynamic range, a digital-to-analog converter (DAC) can interface directly with theTRF3705 modulator. It is imperative that the common-mode voltage of the DAC and the modulator basebandinputs be properly maintained. With the proper interface network, the common-mode voltage of the DAC can betranslated to the proper common-mode voltage of the modulator. The TRF3705 common-mode voltage istypically 0.25 V, and is ideally suited to interface with the DAC3482/3484 (DAC348x) family because thecommon-mode voltages of both devices are the same; there is no translation network required. The interfacenetwork is shown in Figure 67.

Figure 67. DAC348x Interface with the TRF3705 Modulator

The DAC348x requires a load resistor of 25 Ω per branch to maintain its optimum voltage swing of 1-VPPdifferential with a 20-mA max current setting. The load of the DAC is separated into two parallel 50-Ω resistorsplaced on the input and output side of the low-pass filter. This configuration provides the proper resistive load tothe DAC while also providing a convenient 50-Ω source and load termination for the filter.




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8.2.2.6 DAC348x with TRF3705 Modulator PerformanceThe combination of the DAC348x driving the TRF3705 modulator yields excellent system parameters suitable forhigh-performance applications. As an example, the following sections illustrate the typical modulated adjacentchannel power ratio (ACPR) for common telecom standards and bands. These measurements were taken on theDAC348x evaluation board.

8.2.2.6.1 WCDMA

The adjacent channel power ratio (ACPR) performance using a single-carrier WCDMA signal in the UMTS bandis shown in Figure 68.

Figure 68. Single-Carrier WCDMA ACPR, IF = 30 MHz, LO Frequency = 2110 MHz

A marginal improvement in OIP3 and output noise performance can be observed by increasing the LO drivepower, resulting in slightly improved ACPR performance. The ACPR performance versus LO drive level is plottedin Figure 75 across common frequencies to illustrate the amount of improvement that is possible.




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8.2.2.6.2 LTE

ACPR performance using a 10 MHz LTE signal in the 700-MHz band is shown in Figure 69.

Figure 69. 10 MHz LTE ACPR, IF = 30 MHz, LO Frequency = 718 MHz

8.2.2.6.3 MC-GSM

ACPR performance using a four-carrier MC-GSM signal in the 1800-MHz band is shown in Figure 70.

Figure 70. Four-Carrier MC-GSM, IF = 30 MHz ACPR, LO Frequency = 1812 MHz




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−81

−80

−79

−78

−77

−76

−75

−5 0 5 10 15

LO Power (dBm)

Ad

jace

nt

Ch

an

ne

l P

ow

er

ratio

(d

Bc)

748 MHz

942.5 MHz

1960 MHz

2140 MHz

2600 MHz

VCM = 0.25 V

VCC = 3.3 V

LO = 0 dBm

GC = Off

G071

−10

−8

−6

−4

−2

0

2

4

200 250 300 350 400 450 500Frequency (MHz)

Out

put P

ower

(dB

m)

TA = −40°CTA = 25°CTA = 85°C

VCM = 0.25 VVCC = 3.3 VLO = 0 dBmGC = Off

G069

10

15

20

25

30

35

40

200 250 300 350 400 450 500Frequency (MHz)

OIP

3 (d

Bm

)

TA = −40°CTA = 25°CTA = 85°C


G070

−60

−50

−40

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−20

−10

0

0 500 1000 1500 2000 2500 3000 3500 4000Frequency (MHz)

Una

djus

ted

SB

S (

dB)

LOP_SELOM_SELO_Diff


G067

10

12

14

16

18

20

22

24

26

28

30

32

34

0 500 1000 1500 2000 2500 3000 3500 4000Frequency (MHz)

OIP

3 (d

Bm

)

With 0.2 pF capWithout 0.2 pF cap


G068


8.2.3 Application Curves

Figure 71. Unadjusted Sideband Suppression (SBS) vs LO Figure 72. OIP3 with and without a Shunt 0.2-pF MatchingDrive Options Capacitor at the RF Port

Figure 73. Output Power with 350-MHz Matching Circuit Figure 74. OIP3 with 350-MHz Matching Circuit

Figure 75. Single-Carrier WCDMA ACPR Performance vs LO Power




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9 Power Supply RecommendationsThe TRF3705 is powered by supplying a nominal 3.3 V to pins 18 and 24. These supplies can be tied togetherand sourced from a single clean supply. Proper RF bypassing should be placed close to each power supply pin.

Ground pin connections should have at least one ground via close to each ground pin to minimize groundinductance. The PowerPAD™ must be tied to ground, preferably with the recommended ground via pattern toprovide a good thermal conduction path to the alternate side of the board and to provide a good RF ground forthe device. (Refer to Layout Guidelines for additional information.)




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2,4

5

1,1

6

2,45

Æ 0,254

1,160,508

0,5

08


10 LayoutPopulated RoHS-compliant evaluation boards are available for testing the TRF3705 as a stand-alone device.Contact your local TI representative for information on ordering these evaluation modules, or see the TRF3705product folder on the TI website. In addition, the TRF3705 can be evaluated with the DAC348x (quad/dual 16-bit,1.25GSPS) EVM driving the baseband inputs through a seamless interface at 0.25V common-mode voltage.

10.1 Layout GuidelinesThe TRF3705 device is fitted with a ground slug on the back of the package that must be soldered to the printedcircuit board (PCB) ground with adequate ground vias to ensure a good thermal and electrical connection. Therecommended via pattern and ground pad dimensions are shown in Figure 76. The recommended via diameteris 10 mils (0.10 in or 0,25 mm). The ground pins of the device can be directly tied to the ground slug pad for alow-inductance path to ground. Additional ground vias may be added if space allows.

Decoupling capacitors at each of the supply pins are strongly recommended. The value of these capacitorsshould be chosen to provide a low-impedance RF path to ground at the frequency of operation. Typically, thevalue of these capacitors is approximately 10 pF or lower.

The device exhibits symmetry with respect to the quadrature input paths. It is recommended that the PCB layoutmaintain this symmetry in order to ensure that the quadrature balance of the device is not impaired. The I/Q inputtraces should be routed as differential pairs and the respective lengths all kept equal to each other. On the RFtraces, maintain proper trace widths to keep the characteristic impedance of the RF traces at a nominal 50 Ω.

10.2 Layout Example

Note: Dimensions are in millimeters (mm).

Figure 76. PCB Ground Via Layout Guide




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11 Device and Documentation Support

11.1 Device Support

11.1.1 Definition of Specifications

11.1.1.1 Carrier FeedthroughThis specification measures the power of the local oscillator component that is present at the output spectrum ofthe modulator. The performance depends on the dc offset balance within the baseband input lines. Ideally, if allof the baseband lines were perfectly matched, the carrier (that is, the LO) would be naturally suppressed;however, small dc offset imbalances within the device allow some of the LO component to feed through to theoutput. This parameter is expressed as an absolute power in dBm, and is independent of the RF output powerand the injected LO input power.

It is possible to adjust the baseband dc offset balance to suppress the output carrier component. Devices suchas the DAC348x DAC family have dc offset adjustment capabilities specifically for this function. The AdjustedCarrier Feedthrough graphs (see Figure 33 through Figure 38) optimize the performance at the center of theband at room temperature. Then, with the adjusted dc offset values held constant, the parameter is measuredover the frequency band and across the temperature extremes. The typical performance plots provide anindication of how well the adjusted carrier suppression can be maintained over frequency and temperature withonly one calibration point.

11.1.1.2 Sideband SuppressionThis specification measures the suppression of the undesired sideband at the output of the modulator relative tothe desired sideband. If the amplitude and phase within the I and Q branch of the modulator were perfectlymatched, the undesired sideband (or image) would be naturally suppressed. Amplitude and phase imbalance inthe I and Q branches result in the increase of the undesired sideband. This parameter is measured in dBcrelative to the desired sideband.

It is possible to adjust the relative amplitude and phase balance within the baseband lines to suppress theunwanted sideband. Devices such as the DAC348x DAC family have amplitude and phase adjustment controlspecifically for this function. The Adjusted Sideband Suppression graphs (refer to Figure 39 through Figure 44)optimize the performance at the center of the band at room temperature. Then, with the adjusted amplitude andphase values held constant, the parameter is measured over the frequency band and across the temperatureextremes. The performance plots provide an indication of how well the adjusted sideband suppression can bemaintained over frequency and temperature with only one calibration point.

11.1.1.3 Output NoiseThe output noise specifies the absolute noise power density that is output from the RFOUT pin (pin 16). Thisparameter is expressed in dBm/Hz. This parameter, in conjunction with the OIP3 specification, indicates thedynamic range of the device. In general, at high output signal levels the performance is limited by the linearity ofthe device; at low output levels, on the other hand, the performance is limited by noise. As a result of the highergain and output power of the TRF3705 compared to earlier devices, it is expected that the noise density isslightly higher as well. With its increased gain and high OIP3 performance, the overall dynamic range of theTRF3705 is maintained at exceptional levels.

11.1.1.4 Definition of TermsA simulated output spectrum with two tones is shown in Figure 77, with definitions of various terms used in thisdata sheet.




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F1=

FBB

1 +LO

F2=

FBB

2 +LO

F3rdL =

2F1-F2

F3rdH =

2F2-F1

F2ndL =

(FBB2 - F

BB1 )+LO

F2ndH =

(FBB

2 +FBB1 )+LO

LOLSB1

=LO

- FBB

1

LSB2

=LO

–FBB2

FBBn = Baseband Frequency

Fn = RF Frequency

F3rdH/L = 3rd

Order Intermodulation Product Frequency (High Side / Low Side)

F2ndH/L= 2nd

Order Intermodulation Product Frequency (High Side / Low Side)

LO = Local Oscillator Frequency

LSBn = Lower Sideband Frequency

Des

ired

Signa

l

Unw

ante

dSideb

and

3rd O

rder

IM

2nd

Ord

erIM

f


Device Support (continued)

Figure 77. Graphical Illustration of Common Terms

11.2 Community ResourcesThe following links connect to TI community resources. Linked contents are provided "AS IS" by the respectivecontributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms ofUse.

TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaborationamong engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and helpsolve problems with fellow engineers.

Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools andcontact information for technical support.

11.3 TrademarksPowerPAD, E2E are trademarks of Texas Instruments.All other trademarks are the property of their respective owners.

11.4 GlossarySLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.

12 Mechanical, Packaging, and Orderable InformationThe following pages include mechanical, packaging, and orderable information. This information is the mostcurrent data available for the designated devices. This data is subject to change without notice and revision ofthis document. For browser-based versions of this data sheet, refer to the left-hand navigation.




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PACKAGE OPTION ADDENDUM

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Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status(1)

Package Type PackageDrawing

Pins PackageQty

Eco Plan(2)

Lead finish/Ball material

(6)

MSL Peak Temp(3)

Op Temp (°C) Device Marking(4/5)

Samples

TRF3705IRGER ACTIVE VQFN RGE 24 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 TRF3705IRGE

TRF3705IRGET ACTIVE VQFN RGE 24 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 TRF3705IRGE

(1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.

(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substancedo not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI mayreference these types of products as "Pb-Free".RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide basedflame retardants must also meet the <=1000ppm threshold requirement.

(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuationof the previous line and the two combined represent the entire Device Marking for that device.

(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to twolines if the finish value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on informationprovided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken andcontinues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

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PACKAGE OPTION ADDENDUM

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Addendum-Page 2

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device PackageType

PackageDrawing

Pins SPQ ReelDiameter

(mm)

ReelWidth

W1 (mm)

A0(mm)

B0(mm)

K0(mm)

P1(mm)

W(mm)

Pin1Quadrant

TRF3705IRGER VQFN RGE 24 3000 330.0 12.4 4.3 4.3 1.5 8.0 12.0 Q2

TRF3705IRGET VQFN RGE 24 250 330.0 12.4 4.3 4.3 1.5 8.0 12.0 Q2

PACKAGE MATERIALS INFORMATION

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Pack Materials-Page 1

*All dimensions are nominal

Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)

TRF3705IRGER VQFN RGE 24 3000 367.0 367.0 38.0

TRF3705IRGET VQFN RGE 24 250 367.0 367.0 38.0

PACKAGE MATERIALS INFORMATION

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Pack Materials-Page 2

GENERIC PACKAGE VIEW

Images above are just a representation of the package family, actual package may vary.Refer to the product data sheet for package details.

RGE 24 VQFN - 1 mm max heightPLASTIC QUAD FLATPACK - NO LEAD

4204104/H

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PACKAGE OUTLINE

C

SEE TERMINALDETAIL

24X 0.30.2

2.45 0.1

24X 0.50.3

1 MAX

(0.2) TYP

0.050.00

20X 0.5

2X2.5

2X 2.5

A 4.13.9

B

4.13.9

0.30.2

0.50.3

VQFN - 1 mm max heightRGE0024BPLASTIC QUAD FLATPACK - NO LEAD

4219013/A 05/2017

PIN 1 INDEX AREA

0.08 C

SEATING PLANE

1

6 13

18

7 12

24 19

(OPTIONAL)PIN 1 ID

0.1 C A B0.05

EXPOSEDTHERMAL PAD

25 SYMM

SYMM

NOTES: 1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing per ASME Y14.5M. 2. This drawing is subject to change without notice. 3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.

SCALE 3.000

DETAILOPTIONAL TERMINAL

TYPICAL

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EXAMPLE BOARD LAYOUT

0.07 MINALL AROUND

0.07 MAXALL AROUND

24X (0.25)

24X (0.6)

( 0.2) TYPVIA

20X (0.5)

(3.8)

(3.8)

( 2.45)

(R0.05)TYP

(0.975) TYP


4219013/A 05/2017

SYMM

1

6

7 12

13

18

1924

SYMM

LAND PATTERN EXAMPLEEXPOSED METAL SHOWN

SCALE:15X

NOTES: (continued) 4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature number SLUA271 (www.ti.com/lit/slua271).5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown on this view. It is recommended that vias under paste be filled, plugged or tented.

25

SOLDER MASKOPENING

METAL UNDERSOLDER MASK

SOLDER MASKDEFINED

EXPOSEDMETAL

METAL

SOLDER MASKOPENING

SOLDER MASK DETAILS

NON SOLDER MASKDEFINED

(PREFERRED)

EXPOSEDMETAL

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EXAMPLE STENCIL DESIGN

24X (0.6)

24X (0.25)

20X (0.5)

(3.8)

(3.8)

4X ( 1.08)

(0.64)TYP

(0.64) TYP

(R0.05) TYP


4219013/A 05/2017

NOTES: (continued) 6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate design recommendations.

25

SYMM

METALTYP

SOLDER PASTE EXAMPLEBASED ON 0.125 mm THICK STENCIL

EXPOSED PAD 25

78% PRINTED SOLDER COVERAGE BY AREA UNDER PACKAGESCALE:20X

SYMM

1

6

7 12

13

18

1924

IMPORTANT NOTICE AND DISCLAIMER

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