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TA31275FN/ TA31275FNG 03-01-23 1 TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA31275FN, TA31275FNG AM/FM RF/IF Detector IC for Low Power Wireless System The TA31275FN is an RF/IF detector IC for AM/FM radio. The IC incorporates an RF amp, 2-level comparator, and local ×8 circuit Features RF frequency: 240 to 450 MHz (multiplication is used) 100 to 450 MHz (multiplication is not used) IF frequency: 10.7 MHz Operating voltage range: 2.4 to 5.5 V Current dissipation: 5.8 mA (FM)/5.4 mA (AM) (except current at oscillator circuit) Current dissipation at BS: 0 μA (typ.) Small package: 24-pin SSOP (0.65 mm pitch) Block Diagram Weight: 0.09 g (typ.) 12 4 3 5 6 7 8 10 11 13 21 22 20 19 18 17 16 15 14 SAW RSSI AM/FM Comparator ×8 RSSI REF AM/FM MIX IN GND1 RF- DEC CHARGE RF- IN DATA GND2 BS IF-IN MIX OUT LoBS V CC1 OSC- IN BPF RF- OUT 23 24 2 1 AF OUT LPF OUT LPF IN Detector QUAD V CC2 IF- DEC V CC - Lo 9

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TA31275FN/ TA31275FNG

03-01-23 1

TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic

TA31275FN, TA31275FNG AM/FM RF/IF Detector IC for Low Power Wireless System

The TA31275FN is an RF/IF detector IC for AM/FM radio. The IC incorporates an RF amp, 2-level comparator, and local ×8

circuit

Features • RF frequency: 240 to 450 MHz (multiplication is used) 100 to 450 MHz (multiplication is not used) • IF frequency: 10.7 MHz • Operating voltage range: 2.4 to 5.5 V • Current dissipation: 5.8 mA (FM)/5.4 mA (AM) (except current at oscillator circuit) • Current dissipation at BS: 0 µA (typ.) • Small package: 24-pin SSOP (0.65 mm pitch)

Block Diagram

Weight: 0.09 g (typ.)

12 4 3 5 6 7 8 10 11

13 21 22 20 19 18 17 16 15 14

SAW

RSSI AM/FM

Comparator

×8

RSSI REF AM/FM MIXIN

GND1 RF-DEC

CHARGE RF- IN

DATAGND2 BSIF-INMIX OUT LoBS VCC1

OSC- IN

BPF

RF-OUT

23 24

21

AF OUT

LPF OUT

LPF IN

Detector

QUAD VCC2IF- DEC

VCC- Lo

9

TA31275FN/ TA31275FNG

03-01-23 2

Pin Description (the values of resistor and capacitor in the internal equivalent circuit are typical.)

Pin No. Pin Name Function Internal Equivalent Circuit

1 OSC IN Local oscillator input pin.

2 VCC-Lo Local’ power supply pin

3 LOBS Lo switch pin.

H: ×8 circuit pin. L: Through pass

4 MIX OUT Mixer output pin.

The output impedance of the pin is typically 330 Ω.

5 VCC1 Power supply pin 1.

6 IF IN IF amp input pin.

7 IF DEC IF amp input pin.

Used as a bias coupling pin.

8 GND2 GND pin 2.

9 BS Battery saving pin.

2 pF1

15 k

Ω

5 kΩ

5 kΩ

15 k

Ω

5 kΩ

70 kΩ 3

245 Ω 4

6 7

170

Ω

170

Ω

3 kΩ

40 kΩ 9

TA31275FN/ TA31275FNG

03-01-23 3

Pin No. Pin Name Function Internal Equivalent Circuit

10 QUAD Phase-shift input terminal for the FSK Demodulator. Connect to the discriminator or LC.

11 VCC2 Power supply pin 2.

12 DATA FM/AM waveform shaping output pin. Open collector output. Connect a pull-up resistor.

13 RF IN RF signal input pin.

14 RF DEC Emitter pin for internal transistor.

16 RF OUT RF amp output pin.

15 CHARGE Control terminal for quick charge circuit. To use the quick charge circuit, attach a capacitor.

17 GND1 GND pin 1.

18 MIX IN Mixer input pin.

19 AM/FM Changeover switch for ASK/FSK.

Hi: AM Lo: FM

10500 Ω

1 kΩ 1 pF

8 kΩ

8 kΩ

2 kΩ 12

16

14

133 kΩ

10 kΩ

100

5 kΩ

500 Ω

15

18

2.4

500

Ω

300 kΩ 19

TA31275FN/ TA31275FNG

03-01-23 4

Pin No. Pin Name Function Internal Equivalent Circuit

20 REF Threshold input terminal for 2-level FM/AM comparator.

21 RSSI RSSI output pin.

22 AFOUT Output terminal for FM demodulator.

23 LPF IN FM/AM LPF input pin.

24 LPF OUT FM/AM LPF output pin.

Equivalent circuits are given to help understand design of the external circuits to be connected. They do not accurately represent the internal circuits.

24

23

20 500 Ω

5.5 kΩ100 kΩ

100 kΩ

DATA

COMP

33 k

Ω

22 30 kΩ

21

30 k

Ω

23

5.5 kΩ

24

500 Ω

TA31275FN/ TA31275FNG

03-01-23 5

Functions 1. Waveform Shaper Circuit (comparator)

The output data (pin 12) are inverted.

2. RSSI Function DC potential corresponding to the input level of IF IN (pin 6) is output to RSSI (pin 21). Output to RSSI

(pin 21) is converted to a voltage by the internal resistance. Thus, connecting external resistance R to pin 21 varies the gradient of the RSSI output as shown below. Note that due to the displacement of temperature coefficients between external resistor R and the internal IC resistor IC resistor, the temperature characteristic of the RSSI output may change. Also, the maximum RSSI value should be VCC − 1 V or less, because AM doesn’t correct movement Filter AMP when voltage of RSSI high.

Figure 1 Figure 2

3. VCC Pin and GND Pin Use the same voltage supply for VCC − Lo (2 pin) and VCC1 (5 pin) and VCC2 (11 pin) (or connect them).

Also, use the same voltage supply source for GND1 (17 pin) and GND2 (8 pin) (or connect them).

4. Local Oscillator Circuit The local oscillator circuit is external-input-only. The device incorporates no transistor for oscillation. Input to pin 1 at a level from 95 to 105dBµV. Adjust the values of constants C107 and C108 shown in the application circuit diagram so that the input

level will become approximately 100dBµV. By switching the Lo switch (LOBS), the frequency set by the external circuit can be used as-is without

using the ×8 circuit.

Lo Switch (LOBS) H L

Local oscillation status ×8 circuit in operation ×8 circuit halted/through pass

5. RF Amp Current Adjustment

The RF amp current dissipation can be regulated by varying resistor R as shown in the figure below. When R = 1 kΩ, the current dissipation is approximately 600 µA.

Figure 3

14

R

RF DEC

IF input level

After R is connected

30 k

Ω

21 R

TA31275FN/ TA31275FNG

03-01-23 6

6. Battery-Saving (BS) Function and Lo Switch LOBS Function The IC incorporates a battery-saving function and a Lo switch function. These function offer the

following selection.

FM Mode (FM/AM pin: L)

BS Pin/LOBS Pin Circuit Status in the IC IC Current Dissipation

(at no signal)

H/H

Circuits in operation: ・×8 circuit ・Mixer ・RF amp ・Comparator ・IF amp ・Detector circuit ・RSSI ・Comparator capacitor charger circuit

5.8 mA (typ.)

H/L ×8 circuit only halted, Frequency set by External circuit can be used as-is. 3.5 mA (typ.)

L/H ×8 circuit only in operation 2.6 mA (typ.)

L/L All circuits 0 mA (typ.)

AM Mode (FM/AM pin: H)

BS Pin/LOBS Pin Circuit Status in the IC IC Current Dissipation

(at no signal)

H/H

Circuits in operation: ・×8 circuit ・Mixer ・RF amp ・Comparator ・IF amp ・RSSI ・Comparator capacitor charger circuit

5.4 mA (typ.)

H/L ×8 circuit only halted, Frequency set by External circuit can be used as-is. 3.1 mA (typ.)

L/H ×8 circuit only in operation 2.6 mA (typ.)

L/L All circuits 0 mA (typ.)

TA31275FN/ TA31275FNG

03-01-23 7

7. RF Amp Gain 2 RF amp gain 2 (Gv (RF) 2) is a reference value calculated as follows. Measure GRF in the following figure. Gv (RF) 2 is calculated as follows:

Gv (RF) 2 = GRF − Gv (MIX)

Figure 4

8. IF Amp Gain The intended value is 75dB.

9. Waveform-Shaping Output Duty Cycle

The specified range of electrical characteristics is only available for single-tone.

10. Local Frequency Range (after multiplying frequency by 8) When the multiplier circuit is used, the local frequency will be in the range 250.7 MHz to 439.3 MHz.

11. Treatment of FM Terminal when Using AM

When using AM, it is not necessary to treat the QUAD pin (pin 10). Leave it open or connected to an FM external circuit. To use the bit rate filter, connect the RSSI pin (pin 21) to the bit rate filter through a resistor. The AF-OUT pin (pin 22) should be left open.

Figure 5 Figure 6

Using AM causes current to flow through the AM/FM pin (pin 19). Ground the AM/FM pin (pin 19) or connect it to the BS pin (pin 9).

R9

R8

AF OUT

RSSI

Bit rate filter for FM

C18

C

17

22 21

27 n

H

1000 pF

4 6

18 16 13

33 n

H

0.01 µF

SG 50dBµV

GRF

6 pF

6 pF

1 kΩ

1000 pF

0.01 µF

2122

R9

AF OUT

RSSI

Bit rate filter for AM

36 kΩ

C18

TA31275FN/ TA31275FNG

03-01-23 8

12. Control Terminal for Quick Charge Circuit (CHARGE) CHARGE (15 pin) is control terminal for quick charge circuit. REF (20 pin) control terminal for quick

charge a given period by time constant of internal resistance and outside capacitance. Enabling the CHARGE pin requires an external capacitor. In normal operation, connect a capacitor having the same capacitance as that of the capacitor connected to the REF pin (pin 20).

If the connected external capacitor (C11) is 0.1 µF, the quick charge time is 7 ms (typically).

13. Bit Rate Filter for FM The current FM bit rate filter is used as a tertiary filter. If the filter is to be used at a rate other than 1200 bps, please change the filter constant.

Quadratic Filter (NRZ)

R10 R9 R8 C20 C19 C18

1200 bps 68 kΩ 68 kΩ 68 kΩ 0.01 µF 560 pF 3300 pF

2400 bps 68 kΩ 68 kΩ 68 kΩ 4700 pF 270 pF 1500 pF

4800 bps 68 kΩ 68 kΩ 68 kΩ 2200 pF 150 pF 680 pF

14. Bit Rate Filter for AM

The current AM bit rate filter is used as a quadratic filter. If the filter is to be used at a rate other than 1200 bps, please change the filter constant.

Quadratic Filter (NRZ) (the bit rate filter time constant takes into account the internal resistance RSSI (30 kΩ))

R R10 C20 C19

1200 bps 36 kΩ 68 kΩ 4700 pF 1500 pF

2400 bps 36 kΩ 68 kΩ 2200 pF 680 pF

4800 bps 36 kΩ 68 kΩ 1000 pF 390 pF

When the filter constants shown below are used, it is not necessary to set the R constant value.

R R10 C20 C19

1200 bps 30 kΩ 6800 pF 2200 pF

2400 bps 30 kΩ 3300 pF 1500 pF

4800 bps 30 kΩ 1800 pF 820 pF

In addition, the current AM bit rate filter can be used as a tertiary filter. If the filter is to be used at a rate other than 1200 bps, please change the filter constant.

TA31275FN/ TA31275FNG

03-01-23 9

Quadratic Filter (NRZ) (the bit rate filter time constant takes into account the internal resistance RSSI (30 kΩ))

R R9 R10 C20 C19 C18

1200 bps 36 kΩ 68 kΩ 68 kΩ 0.01 µF 560 pF 3300 pF

2400 bps 36 kΩ 68 kΩ 68 kΩ 4700 pF 270 pF 1500 pF

4800 bps 36 kΩ 68 kΩ 68 kΩ 2200 pF 150 pF 680 pF

When the filter constants shown below are used, it is not necessary to set the R constant value.

R R9 R10 C20 C19 C18

1200 bps 30 kΩ 30 kΩ 0.033 µF 2200 pF 8200 pF

2400 bps 30 kΩ 30 kΩ 0.015 µF 1000 pF 3900 pF

4800 bps 30 kΩ 30 kΩ 6800 pF 470 pF 1800 pF

For the cutoff frequency of the bit rate filter, specify a sufficiently high value for the bit rate to be used. Specifying a relatively high cutoff frequency for the bit rate filter enables a low capacitor to be used at

the REF pin, therefore making the pulse rise quickly. When AM is used, the internal resistance of RSSI is used. So, take the output resistance into account

when specifying a cutoff frequency.

TA31275FN/ TA31275FNG

03-01-23 10

Cautions for Designing Circuit Board Patterns Observe the following cautions when designing circuit patterns for this product.

Local Oscillator Circuit (pin 1)

Isolate the local oscillator circuit block sufficiently from the RF amp block. Isolate the local oscillator circuit block securely so that its output will not get in the IF input, IF filter, or

mixer input. Do not place the local oscillator circuit block too close to the ceramic filter. Subdivide the ground pattern for the local oscillator circuit block, and connect the subdivisions with thin

lines.

Mixer Output Block (pin 4) to IF Input Block (pin 6) Isolate the input and output patterns of the IF filter securely from each other.

Demodulator Circuit Block (pin 10)

Isolate the demodulator circuit block sufficiently from the IF input block (pin 6). Do not place the LC too close to the IC device.

Data Output Block (pin 12)

Isolate the data output block sufficiently from the IF input block (pin 6). Isolate the output pattern of the data output block from other circuits as much as possible, so any noise from

a stage subsequent to the output will not affect them.

RF Amp Circuit Block (1) Preventing RF amp oscillation

Do not place the patterns connected to pins 13 and 14 too close to each other. Isolate the patterns connected to the input block (pin 13) and output block (pin 16) from each other. Make the RF input signal line relatively thin. Place a relatively wide ground pattern between the RF-IN pin (pin 13) and RF-DEC pin (pin 14). Connect the RF-OUT pin (pin 16) and MIX-IN pin (pin 18) with the shortest possible pattern.

(2) Attaining a sufficient gain

To attain a sufficient RF amp gain, select an optimum value for the input matching circuit block (pin 13) according to the board circuit pattern.

IC Mounting Area

Provide a ground pattern under the IC device, and prepare relatively many through holes.

TA31275FN/ TA31275FNG

03-01-23 11

Maximum Ratings (unless otherwise specified, Ta = 25°C. the voltage is with reference to the ground level.)

Characteristics Symbol Rating Unit

Supply voltage VCC 6 V

Power dissipation PD 780 mW

Operating temperature range Topr −40 to 85 °C

Storage temperature range Tstg −55 to 150 °C

The maximum ratings must not be exceeded at any time. Do not operate the device under conditions outside the above ratings.

Operable Range (unless otherwise specified, Ta = 25°C. the voltage is with reference to the ground level.)

Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit

Operating voltage range VCC 2.4 5.0 5.5 V

RF operating frequency 1 fRF1 When frequency multiplication is used 240 450 MHz

RF operating frequency 2 fRF2 When frequency multiplication is not used 100 450 MHz

Local frequency fLO When frequency multiplication is used (×8) 250.7 439.3 MHz

Operating ranges indicate the conditions for which the device is intended to be functional even with the electrical changes.

Electrical Characteristics (unless otherwise specified: Ta = 25°C, VCC = 5 V, fin (RF) = fin (MIX) = 314.9 MHz, fin (IF) = 10.7 MHz)

Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit

Current dissipation at battery saving Icco 3 BS = “L”, LOBS = “L” 0 5 µA

RF amp gain 1 Gv (RF) 1 1 (5) The input and output impedances are 50 Ω. −9.0 −6.0 −3.0 dB

Mixer conversion gain Gv (MIX) 17 21 25 dB

RSSI output voltage 1 VRSSI1 Vin (IF) = 35dBµVEMF 0.05 0.25 0.45 V

RSSI output voltage 2 VRSSI2 Vin (IF) = 65dBµVEMF 0.8 1.05 1.3 V

RSSI output voltage 3 VRSSI3 Vin (IF) = 100dBµVEMF 1.6 1.95 2.3 V

RSSI output resistance RRSSI 22 30 38 kΩ

Comparator input resistance RCOMP 75 100 125 kΩ

Data output voltage (L level) VDATAL 1 (3) IDATAL = 500 µA 0.4 V

Data output leakage current (H level) IDATAH 1 (4) 2 µA

BS pin H-level input voltage VBSH 2.2 5.5 V

BS pin L-level input voltage VBSL 0 0.2 V

LOBS pin H-level input voltage VLOBSH 2.2 5.5 V

LOBS pin L-level input voltage VLOBSL 0 0.2 V

TA31275FN/ TA31275FNG

03-01-23 12

FM Mode (Ta = 25°C, VCC = 5.0 V, fin (RF) = fin (MIX) = 314.9 MHz, fin (IF) = 10.7 MHz, dev = ±20 kHz, fmod = 600 Hz (single wave))

Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit

Quiescent current consumption (for FM) Iccqfm 2 (1) BS/LOBS/FMAM = “H/H/L”

Fin (Lo) = 40.7 MHz 4.3 5.8 7.3 mA

Demodulated output level Vod Vin (IF) = 80dBµVEMF 30 40 55 mVrms

Waveform shaping duty ratio DRfm 1 (2) Vin (IF) = 80dBµVEMF For single tone 45 50 55 %

AM Mode (Ta = 25°C, VCC = 5.0 V, fin (RF) = fin (MIX) = 314.9 MHz, fin (IF) = 10.7 MHz, AM = 90%, fmod = 600 Hz (square wave))

Characteristics Symbol Test Circuit Test Condition Min Typ. Max Unit

Quiescent current consumption (for AM) Iccqam 2 (2) BS/LOBS/FMAM = “H/H/H”

Fin (Lo) = 40.7 MHz 4.0 5.4 6.8 mA

Reference characteristic data DRam 1 (2) Vin (IF) = 80dBµVEMF For single tone 45 50 55 %

Reference Characteristic Data* Characteristics Symbol Test

Circuit Test Condition Typ. Unit

IF amp input resistance R (IF) IN 330 Ω

RF amp gain 2 Gv (RF) 2 31 dB

RF amp input resistance R (RF) IN 1.2 kΩ

RF amp input capacitance C (RF) IN 2.0 pF

RF amp output capacitance C (RF) OUT 2.0 pF

Mixer input resistance R (MIX) IN 1.5 kΩ

Mixer input capacitance C (MIX) IN 1.5 pF

Mixer output resistance R (MIX) OUT 330 Ω

Mixer intercept point IP3 96 dBµV

*: These characteristic data values are listed just for reference purposes. They are not guaranteed values.

Reference Characteristic Data (FM mode)*

Characteristics Symbol Test Circuit Test Condition Typ. Unit

Limiting sensitivity Vi (LIM) IF input 35 dBµVEMF

Signal-to-noise ratio 1 S/N1 1 (8) Vin (IF) = 40dBµVEMF 40 dB

Signal-to-noise ratio 2 S/N2 1 (8) Vin (IF) = 80dBµVEMF 57 dB

*: These characteristic data values are listed just for reference purposes. They are not guaranteed values.

TA31275FN/ TA31275FNG

03-01-23 13

Typical Test Circuit (FSK)

Test Circuit 1 (1) VRSSI (2) DR

(3) VDATAL (4) IDATAH

23

202.5 V

V

V

3.0 V

12 VCC

I = V/100 × 103

V

100 kΩ

SG

6 21

V

62 Ω

0.01 µF

1000

pF

12 VCC

V

R = 10 kΩ

23

20 2.5 V

V

V

3.0 V

Det

ecto

r

12 4 3 5 6 7 8 10 11

13 21 22 20 19 18 17 16 15 14

RSSI AM/FM

Comparator

×8

RSSI REF AM/FM MIXIN

GND1 RF DEC

CHARGE RF IN

DATA GND2 BSIFIN

MIX OUT LOBS VCC1

OSC IN

100

0.1

µF

0.01

µF

0.01

µF

560

pF

68 k

Ω

68 k

Ω 33

00 p

F 68

1 kΩ

1000

pF

27nH

1 kΩ

VCC

BPF

VCC DATA

R4 C6

C3

VCC

C20

C19

R10

R9

R8

C18

L4

R6

1000

pF R5

C10

C

9 VCC

RF OUT

6 pF

1000 pF

C13

0.01

µF

C12

VCC

VCC

23 24

2 1

C17

C15

0.

1 µF

1000

pF

AF OUT

LPF OUT

LPF IN

Detector

QUAD VCC2IF DEC

R3

4.7

0.1

µF

C14

0.1

µF

C2

0.1

µF

VCC

C22

C11 > =

C15

9

VCC 0.01 µF

0.1

µF

C7

10 µ

F

SG6 12

51 Ω

0.01 µF

100

VCC

TA31275FN/ TA31275FNG

03-01-23 14

(5) Gv (RF) 1 (6) Gv (MIX)

(7) Gv (MIX) vs VLO (8) S/N1, 2

Test Circuit 2

Iccqfm Iccqam

Test Circuit 3

Icco

SG 1 4

51 Ω

0.01 µF

0.01

µF

6 18 SG

51 Ω

1000 pF

SG 13 16

51 Ω

1000 pF

51 k

Ω

1000 pF

SG13 4

51 Ω

1000 pF

0.01

µF

6

SG1 24

51 Ω

0.01 µF

13SG

51 Ω

1000 pF

Buff

8

SG

1 kΩ

VCC

1

2 3 9 5 11

A

17 14

51 Ω

0.01

µF

19

8

1 kΩ

VCC

14

2 5 16

A

17 9

8

SG

1 kΩ

VCC

1

2 3 9 5 11

A

14 1751

Ω

0.01

µF

19

TA31275FN/ TA31275FNG

03-01-23 15

Reference Data (This is characteristics data when it used evaluation boards. This is not guarantee on condition that it is stating except electrical characteristics.)

Quiescent Current Consumption – Supply Voltage Characteristics

Supply voltage VCC (V)

Qui

esce

nt c

urre

nt c

onsu

mpt

ion

IC

C

(mA)

RF Amp Conversion Gain – Supply Voltage Characteristics

Supply voltage VCC (V)

R

F am

p co

nver

sion

gai

n (

dB)

RF Amp Frequency Characteristics

RF IN input frequency f (RF) in (MHz)

R

F am

p co

nver

sion

gai

n (

dB)

VCC = 5 V V (RF) in = 50dBµV <Meas point> RFOUT at spectrum analyzer * Input/output impedance =

50 Ω −10

100

−2

300 500 1000

−7

−5

−3

−4

−6

−8

−9

DEC (R5) = 750 Ω

DEC (R5) = 1 kΩ

Quiescent Current Consumption – Supply Voltage Characteristics FM Mode

Supply voltage VCC (V)

Qui

esce

nt c

urre

nt c

onsu

mpt

ion

I CC

qfm

(m

A)

Quiescent Current Consumption – Supply Voltage Characteristics AM Mode

Supply voltage VCC (V)

Qui

esce

nt c

urre

nt c

onsu

mpt

ion

I CC

qam

(m

A)

S Curve Characteristics (IF IN)

Detuning frequency (kHz)

S

curv

e ou

tput

vol

tage

(V

)

0−600

2.5

−400 −200 200 400 600

0.5

1.5

2

1

VCC = 5 V f (IF) in = 10.7 MHz + ∆f V (IF) in = 50dBµVEMF <Meas point> AFOUT at multi meter

110°C

25°C

−40°C

0

−40°C

110°C

0

2

4

8

6

5

3

1

0 1 2 3 4 5 6

25°C

7

f (Lo) in = 40.7 MHz V (Lo) in = 100dBµVEMF * No switching pin current is

included.

110°C

0

2

4

8

6

5

3

1

0 1 2 3 4 5 6

25°C

−40°C

7

f (Lo) in = 40.7 MHz V (Lo) in = 100dBµVEMF * No switching pin current is

included. −50

1

0

2 3 4 5 6

−25

−15

−5

−10

−20

−30

−35

−45

f (RF) in = 314.9 MHz V (RF) in = 50dBµVEMF <Meas point> RFOUT at spectrum analyzer * Input/output impedance = 50 Ω

110°C

25°C

−40°C

−40

f (Lo) in = 40.7 MHz V (Lo) in = 100dBµV * No switching pin

current is included.

0

2

4

7

6

5

3

1

0

BS

1 2 3 4 5 6

Multiplication only

Multiplication off

AM_ALL

FM_ALL

TA31275FN/ TA31275FNG

03-01-23 16

Reference Data (This is characteristics data when it used evaluation boards. This is not guarantee on condition that it is stating except electrical characteristics.)

VCC = 5 V f (IF) in = 10.7 MHz Dev = ±20 kHz fmod = 600 Hz <Meas point> FILOUT at audio analyzer

−70 −20

10

0 20 60 100 120

−10

−20

−30

−40

−50

40 80

N

S + N

AMR

0

−60

S/N Characteristics (IF input) in the FM Mode

IF IN input level V (IF) in (dBµVEMF)

S

+ N

, N

(dB)

S/N Characteristics (IF input) in the AM Mode

IF IN input level V (IF) in (dBµVEMF)

S

+ N

, N

(dB)

−90−20

10

0 20 60 100 120

−10

−20

−40

−60

−80

40 80

S + N

N

VCC = 5 V f (IF) in = 10.7 MHz AM = 90% fmod = 600 Hz <Meas point> FILOUT at audio analyzer

0

−30

−50

−70

S/N Characteristics (MIX input) in the AM Mode when Multiplication is Used

MIX IN input level V (MIX) in (dBµVEMF)

S

+ N

, N

(dB)

RSSI Output Voltage Characteristics (IF, MIX, and RF inputs)

Input level Vin (dBµVEMF)

RSS

I out

put v

olta

ge

VRSS

I (

V)

RSSI Output Voltage Characteristics (MIX inputs)

MIX IN input level V (MIX) in (dBµVEMF)

R

SSI o

utpu

t vol

tage

VR

SSI

(V)

S/N Characteristics (MIX input) in the AM Mode when Multiplication is Used

MIX IN input level V (MIX) in (dBµVEMF)

S

+ N

, N

(dB)

0 −20

2.5

0 20 60 80 120

0.5

1.5

2

1 f (RF) in = f (MIX) in = 314.9 MHz/VCC = 5 V f (IF) in = 10.7 MHz f (Lo) in = 40.7/304.2 MHzV (Lo) in = 100dBµV <Meas point> RSSI at multi meter

IF IN

MIXIN (multiplication is not used)

MIXIN (multiplication is used)

40 100

RF IN

0−20

2.5

0 20 60 80 120

0.5

1.5

2

1

VCC = 5 V f (MIX) in = 314.9 MHzf (Lo) in = 40.7 MHz V (Lo) in = 100dBµV LOBS = H <Meas point> RSSI at multi meter

−40°C

110°C

40 100

25°C

N

S + N

VCC = 5 V f (MIX) in = 314.9 MHz f (Lo) in = 304.2 MHz V (Lo) in = 100dBµV AM = 90% fmod = 600 Hz (rectangular wave) LOBS = “H” <Meas point> FILOUT at audio analyzer

−90−20

10

0 20 60 100 120

−10

−20

−40

−60

−80

40 80

0

−30

−50

−70

110°C

110°C

−70 −20

10

0 20 60 100 120

−20

−30

−40

−50

40 80

−40°C

0

−60

VCC = 5 V f (MIX) in = 314.9 MHzf (Lo) in = 40.7 MHz f (Lo) in = 100dBµV Dev = ±20 kHz fmod = 600 Hz LOBS = “H” <Meas point> FILOUT at audio analyzer

25°C 110°C

25°C −40°C

25°C−40°C

TA31275FN/ TA31275FNG

03-01-23 17

Reference Data (This is characteristics data when it used evaluation boards. This is not guarantee on condition that it is stating except electrical characteristics.)

−40°C

−25 −600

5

−400 −200 600

0

−5

−10

−15

−20

0 400

VCC = 5 V f (IF) in = 50dBµVEMF f (IF) in = 10.7 MHz + ∆f Dev = ±20 kHz fmod = 600 Hz <Meas point> FILOUT at audio analyzer

110°C

25°C

200

−30 50

30

60 70 90 110 120

20

10

0

−10

−20

80 100

VCC = 5 V f (MIX) in = 314.9 MHz V (MIX) in = 60dBµV f (Lo) in = 40.7 MHz <Meas point> MIXOUT at spectrum analyzer * Terminated with the IF

input impedance

Multiplication is used

Multiplication is not used

−50

−30

−10

30

10

0

−20

−40

1 2 3 4 5 6

20

f (MIX) in = 314.9 MHzV (MIX) = 60dBµV f (Lo) in = 40.7 MHz V (Lo) in = 100dBµV LOBS = “H” <Meas point> MIXOUT at spectrum analyzer * Terminated with the

IF input impedance

110°C

−40°C

25°C

8100

24

300 500 1000

18

22

20

16

12

VCC = 5 V V (MIX) in = 60dBµV V (Lo) in = 100dBµV LOBS = “L” (direct input) <Meas point> MIXOUT at spectrum analyzer * Terminated with the IF

input impedance

110°C

−40°C

25°C

14

10

Mixer Conversion Gain Frequency Characteristics

MIX IN input frequency f (MIX) in (MHz)

M

ixer

con

vers

ion

gain

GV

(M

IX)

(dB

)

Mixer Conversion Gain – Local Input Level Characteristics

Local input level V (Lo) in (dBµV)

M

ixer

con

vers

ion

gain

GV

(M

IX)

(dB

)

Mixer Conversion Gain – Supply Voltage Characteristics

Local input level V (Lo) in (dBµV)

M

ixer

con

vers

ion

gain

GV

(dB

)

Mixer Conversion Gain – Local Input Level Characteristics

Local input level V (Lo) in (dBµV)

M

ixer

con

vers

ion

gain

GV

(M

IX)

(dB

)

−4050

30

60 70 90 110 120

20

10

−10

−20

−30

80 100

VCC = 5 V f (MIX) in = 314.9 MHz V (MIX) in = 60dBµV f (Lo) in = 40.7 MHz LOBS = “H” <Meas point> MIXOUT at spectrum analyzer * Terminated with the

IF input impedance

110°C

25°C

0

−40°C

Detuning Characteristics

Detuning frequency (kHz)

At

tenu

atio

n le

vel

(dB

)

Mixer Intercept Point

040

160

60 80 120

120

80

60

40

20

100

VCC = 5 V f (MIX) in = 314.9 MHz f (Lo) in = 40.7 MHz V (Lo) in = 100dBµV fmod = 600 Hz <Meas point> MIXOUT at spectrum analyzer

Desired waveInterference

wave

140

100

M

ixer

out

put l

evel

V

(MIX

) out

(d

BµV)

TA31275FN/ TA31275FNG

03-01-23 18

Reference Data (This is characteristics data when it used evaluation boards. This is not guarantee on condition that it is stating except electrical characteristics.)

Demodulation Distortion Characteristics

Detuning frequency (IF IN) (kHz)

D

emod

ulat

ion

dist

ortio

n (

dB)

−40 −600

−15

−400 0 400 600

−20

−25

−30

−35

−200 200

VCC = 5 V f (IF) in = 10.7 MHz Vin = 50dBµV Dev = ±20 kHz AM/FM = “L” <Meas point> FILOUT at audio analyzer * The FILOUT output signal

is measured with a noise meter after amplified.

Supply voltage VCC (V)

Wav

efor

m s

hapi

ng o

utpu

t dut

y ra

tio

DR

(%

)

Waveform Shaping Duty Ratio – Supply Voltage Characteristics FM Mode

Supply voltage VCC (V)

D

emod

ulat

ion

outp

ut

(mVr

ms)

Demodulation Output – Supply Voltage Characteristics (FM)

110°C

34 1

54

2 3 5 6

50

46

42

40

4

f (IF) in = 10.7 MHz V (IF) in = 50dBµVEMFDev = ±20 kHz fmod = 600 Hz <Meas point> DATA at oscilloscope

36

44

48

52

−40°C 25°C

38

110°C

01

45

2 3 5 6

35

25

15

10

4

f (IF) in = 10.7 MHz V (IF) in = 50dBµVEMF Dev = ±20 kHz fmod = 600 Hz <Meas point> FILOUT at audio analyzer

5

20

30

40

25°C

−40°C

TA31275FN/ TA31275FNG

03-01-23 19

Reference Data (with a broadband ceramic filter (280 k) used)

12-dB SINAD Sensitivity Characteristics –FM Modulation

12-dB SINAD sensitivity – Supply Voltage Characteristics

S/N and AMR RF Input Characteristics (Dev = ±20 k)

FM modulation Dev (kHz)

Supply voltage VCC (V)

RF IN input level V (RF) in (dBµVEMF)

12-d

B SI

NAD

sen

sitiv

ity

( dBµ

VEM

F)

12

-dB

SIN

AD s

ensi

tivity

(d

BµVE

MF)

S

+ N

, AM

R

(dB)

0 20 40 80 10060 −7

2

0

−2

−4

−5

VCC = 5 V f (RF) in = 314.9 MHzfmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBµV LOBS = “H” No SAW filter <Meas point> FILOUT at audio analyzer

−6

−3

−1

1

Sensitivity Detuning Characteristics (AM and FM modulation)

RF IN input frequency f (RF) in (MHz)

12

-dB

SIN

AD s

ensi

tivity

(d

BµVE

MF)

S/N and AMR RF Input Characteristics (Dev = ±40 k)

RF IN input level V (RF) in (dBµVEMF)

S

+ N

, AM

R

(dB)

S Curve – Supply Voltage Characteristics

RF IN input frequency f (RF) in (MHz)

AF

OU

T pi

n vo

ltage

(V

)

30dBµVMF

0314.4

2.5

314.55 314.7 315 315.15 315.45

0.5

1.5

2

1

VCC = 5 V fmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBµV LOBS = “H” No SAW filter <Meas point> FILOUT at multi meter

0dBµVMF

314.85 315.3

40dBµVMF

20dBµVMF

10dBµVMF

−1.5

3

2

1

0

−0.5

VCC = 5 V Dev = ±20 kHz fmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBµV LOBS = “H” No SAW filter <Meas point> FILOUT at audio analyzer

−1

0.5

1.5

2.5

1 2 3 5 6 4

−70 −20

10

0 20 60 100 120

−10

−20

−30

−40

−50

40 80

N

S + N

AMR

0

−60

VCC = 5 V f (RF) in = 314.9 MHz fmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBµV LOBS = “H” No SAW filter <Meas point> FILOUT at audio analyzer

−70−20

10

0 20 60 100 120

−10

−20

−30

−40

−50

40 80

N

S + N

AMR

0

−60

VCC = 5 V f (RF) in = 314.9 MHz fmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBµV LOBS = “H” No SAW filter <Meas point> FILOUT at audio analyzer

Dev = ±80 k

Dev = ±20 k

−10314.6

10

314.7 314.8 314.9 315 315.2

0

4

8

6

2

−2

−4

−8

AM

VCC = 5 V f (RF) in = 314.9 MHz fmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBµV LOBS = “H” No SAW filter <Meas point> FILOUT at audio analyzer

315.1

−6

Dev = ±40 k

Dev = ±60 k

TA31275FN/ TA31275FNG

03-01-23 20

Reference Data (with a broadband ceramic filter (280 k) used)

Reference Data (with a narrowband ceramic filter (150 k) used)

−5 1.5 4.5 5.5

−2

−2.5

−3.5

−4.5

2.5

−1

−0.5

−1.5

−3

−4

3.5

VCC = 5 V f (RF) in = 314.9 MHz Dev = ±20 kHz fmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBµV LOBS = “H” No SAW filter <Meas point> FILOUT at audio analyzer

0

Demodulation Output – Supply Voltage Characteristics

Waveform Shaping Output Duty Ratio – Supply Voltage Characteristics

12-dB SINAD Sensitivity – FM Modulation Characteristics

12-dB SINAD Sensitivity – Frequency Characteristics (AM and FM)

12-dB SINAD Sensitivity – Supply Voltage Characteristics

S Curve – Supply Voltage Characteristics

Supply voltage VCC (V)

Supply voltage VCC (V)

FM modulation (kHz) RF IN input frequency f (RF) in (MHz)

Supply voltage VCC (V)

RF IN input frequency f (RF) in (MHz)

Wav

efor

m s

hapi

ng o

utpu

t dut

y ra

tio

DR

(%

)

D

emod

ulat

ion

outp

ut

Vod

(m

Vrm

s)

12

-dB

SIN

AD s

ensi

tivity

(d

BµVE

MF)

12

-dB

SIN

AD s

ensi

tivity

( d

BµVE

MF)

AF

OU

T pi

n vo

ltage

(V

)

12

-dB

SIN

AD s

ensi

tivity

(d

BµVE

MF)

0 1

140

2 3 5 6

100

80

60

40

4

Dev = ±20 kHz

120

20

Dev = ±40 kHz

Dev = ±60 kHz

VCC = 5 V f (RF) in = 314.9 MHzfmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBµV LOBS = “H” No SAW filter <Meas point> FILOUT at mult meter

400

60

1 3 5 6

56

52

48

46

4

VCC = 5 V f (RF) in = 314.9 MHz fmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBµV LOBS = “H” No SAW filter <Meas point> DATA at oscilloscope

42

50

54

58

Dev = ±40 k44

2

Dev = ±20 k

−7 0

−1

1 3 5 6

−3

−5

4

VCC = 5 V f (RF) in = 314.9 MHz fmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBµV LOBS = “H” SAW FILTER No SAW filter

−4

−2

−6

2 −10

314.7

10

314.75 314.8 315 315.1

2

0

−4

−8

314.9

6

Dev = ±40 kHz

Dev = ±20 kHz AM

8

4

−2

−6

314.85 314.95 315.05

VCC = 5 V f (RF) in = 314.9 MHzfmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBµVLOBS = “H” SAW FILTER No SAW filter <Meas point> FILOUT at audio analyzer

30dBµVEMF

40dBµVEMF

0314.4

2.5

314.55 314.7 315 315.15 315.45

0.5

1.5

2

1

VCC = 5 V fmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBµV LOBS = “H” No SAW filter <Meas point> FILOUT at multi meter

50dBµVEMF

314.85 315.3

20dBµVEMF

10dBµVEMF

0dBµVEMF

TA31275FN/ TA31275FNG

03-01-23 21

Reference Data (with a narrowband ceramic filter (150 k) used)

S/N and AMR RF Input Characteristics (Dev = ±20 k)

S/N and AMR RF Input Characteristics (Dev = ±40 k)

Waveform Shaping Output Duty Ratio – Supply Voltage Characteristics

RF IN input level V (RF) in (dBµVEMF) RF IN input level V (RF) in (dBµVEMF)

S +

N, N

, AM

R

(dB)

S

+ N

, N, A

MR

(d

B)

Wav

efor

m s

hapi

ng o

utpu

t dut

y ra

tio

DR

(%

)

Supply voltage VCC (V)

AMR

−70−20

10

0 20 60 100 120

−10

−20

−30

−40

−50

40 80

N

S + N0

−60

VCC = 5 V f (RF) in = 314.9 MHz fmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBµV LOBS = “H” No SAW filter <Meas point> FILOUT at audio analyzer

AMR

−60 −20

10

0 20 60 100 120

−10

−20

−30

−40

−50

40 80

N

S + N 0

VCC = 5 V f (RF) in = 314.9 MHz fmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBµV LOBS = “H” No SAW filter <Meas point> FILOUT at audio analyzer

Dev = ±20

40 1

60

2 3 4 5 6

50

54

58

56

52

48

46

42

VCC = 5 V f (RF) in = 314.9 MHzV (RF) in = 20dBµV fmod = 600 Hz f (Lo) in = 40.7 MHz V (Lo) in = 100dBµV LOBS = “H” No SAW filter <Meas point> DATA at oscilloscope

Dev = ±40

44

TA31275FN/ TA31275FNG

03-01-23 22

Application Circuit (FSK)

CF: SFELA10M7FA00-B0 (Murata Mfg. Co., Ltd.)--broadband (280 k)

SFELA10M7JAA0-B0 (Murata Mfg. Co., Ltd.)--narrowband (150 k) LC: P-5DJ (Sumida Corporation)

VCC

0.01

µF 10 pF

120

3.6

33 k

Ω

10 µ

F

10 p

F

R10

0

56 p

F

C10

9

C107

R10

1

47 p

F

C10

3

C10

8

C10

6 C10

1

C10

0

R10

2

0.1

µF

X1

1243 5 6 7 8 10 11

132122 20 19 18 17 16 15 14

SAW

RSSIAM/FM

Comparator

×8

RSSI REF AM/FM MIXIN

GND1 RF DEC

CHARGE RFIN

DATAGND2 BSIFIN

MIXOUTLOBS VCC1

OSCIN

100

0.1

µF

0.01

µF

0.01

µF

560

pF

68 k

Ω

68 k

Ω

33

00 p

F 68

1 kΩ

33 n

H

1000

pF

27 n

H

1 kΩ

VCCBPF

VCCDATA

R4 C6

C3

VCC

C20

C19

R10

R9

R8

C18

L4

R6

1000

pF R5

C10

C

9

6 pF

RF IN

VCC

RF OUT

6 pF

1000 pF

C13

0.01

µF

C12

VCC

VCC

2324

21

C17

C15

0.

1 µF

1000

pF

AF OUT

LPFOUT

LPFIN

Detector

QUAD VCC2IF DEC

C2

0.1

µF

VCC

VCCLo

C22

C8

L5

C11 > =

C15

40.7

MH

z

9

VCC

0.1

µF

C7

Det

ecto

r R

3 4.7

0.1

µF

C5

TA31275FN/ TA31275FNG

03-01-23 23

Application Circuit (ASK)

CF: SFELA10M7FA00-B0 (Murata Mfg. Co., Ltd.)--broadband (280 k)

SFELA10M7JAA0-B0 (Murata Mfg. Co., Ltd.)--narrowband (150 k)

VCC

0.01

µF

40.7

MH

z

10 pF

120

3.6

33 k

Ω

10 µ

F

10 p

F

R10

0

56 p

F

C10

9

C107

R10

1

47 p

F

C10

3

C10

8

C10

6

C10

1

C10

0

0.1

µF

X1

1243 5 6 7 8 9 10 11

132122 20 19 18 17 16 15 14

SAW

RSSIAM/FM

Comparator

×8

RSSI REF

AM/FM

MIXIN

GND1 RF DEC

CHARGE RF IN

DATAGND2 BSIFIN

MIXOUTLOBS VCC1

OSCIN

100

0.1

µF

0.01

µF

0.01

µF

560

pF

68 k

Ω

3300

pF

1 kΩ

33 n

H

1000

pF

27 n

H

1 kΩ

VCCBPF

VCCDATA

R4 C6

C3

VCC

C20

C19

R10

C18

L4

R6

R5

C10

C

9

6 pF

RF IN

VCC

RF OUT

6 pF

1000 pF

C13

0.01

µF

C12

VCC

2324

2

C15

0.1

µF

AF OUT

LPFOUT

LPFIN

Detector

QUAD VCC2IF DEC

C7

10 µ

F

C2

0.1

µF

VCC

VCC

VCC Lo

C8

L5

C11

( > = C

15)

R9

68 kΩ 36 kΩ

0.1

µF To pin 9

To pin 19

1

M

i

TA31275FN/ TA31275FNG

03-01-23 24

Package Dimensions

Weight: 0.09 g (typ.)

TA31275FN/ TA31275FNG

03-01-23 25

• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..

• The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk.

• The products described in this document are subject to the foreign exchange and foreign trade laws.

• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.

• The information contained herein is subject to change without notice.

000707EBA RESTRICTIONS ON PRODUCT USE