toru tsuboyama (kek) 4 july 2008superb.kek.jp/inaug/slide/joint/tsuboyama.pdftoru tsuboyama (kek) 4...
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Toru Tsuboyama (KEK)4 July 2008
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Leader: Y. Arai (KEK)Activity started as one of KEK detector R&D projects in 2005. Three multi-project wafers have been submitted (2005, 2006 and 2007) to OKI 0.15/0.20 μm SOI CMOS.
Multiple-Project Wafer: KEK, Jaxa, Hawaii, FNAL and LBL.Submission 2005/2006/2007
Contents1. Introduction2. SOI structure3. Radiation hardness4. Test of pixel sensor prototypes
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The charge induced by radiation in the silicon wafer is processed by CMOS circuit above the buried oxide (BOX).
Process 0.15μm Fully-Depleted SOI CMOS process, 1 Poly, 5 Metal layers (OKI Electric Industry Co. Ltd.).
SOI wafer Wafer Diameter: 150 mmφ, Top Si : Cz, ~18 Ω-cm, p-type, ~40 nm thick Buried Oxide: 200 nm thickHandle wafer: Cz、700 Ω-cm (n-type), 650 μm thick (SOITEC)
Backside Thinned to 350 μm, and plated with Al (200 nm).
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Improvement is done by modifying design and process parameters
The guard ring structureAvoid square corners
Implantation voltage.The higher the implantation voltage, the deeper the implant depth.Then the maximum electric field is decreased.
4
FY05 FY06ST
FY06HE
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Irradiation to proton beam and 60Co γray.Up to 4.7M Gy (470 Mrad)!
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5.8x1014
5.5x1015
・VOUT・RESET
100us/div
6.4x1013
6
Irradiation to Proton beam
– Response of INTPIXEL sensor to reset pulse is measured as a function of proton flux (70 MeV).
– Flux 6.4x1013 , 5.8x1014 ,5.5x1015 neq/cm2
– Response were confirmed up to 5.8x1014 neq/cm2
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Irradiation to γ
Non-irrad 596 kGy
Vrst [V] Vrst [V]
ActiveBelow threshold
SaturatedWith back-side voltage correction, the pixel circuit functions after 60 Mrad irradiation.
Back Bias
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Positive charge is accumulated in oxide layer after irradiation.
The accumulated charge changes the characteristics of the transistors.
Can be restored by adjusting the voltage of the substrate silicon.
Back-gate voltage Correction
source draingate
BuriedOxide
Si- substrate
Backgate
+++++
+++
未照射
0 -10 -20 -30
(陽子線照射時)
Vgs[V]
I d [A
]
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9 9
INTPIX2005---- 32x32 (0.15 μm)2006---- 128x128 (0.15 μm)2007---- 128x128 (0.20 μm)
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INTPIX2 Pixel
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20x20 um2
p-n junction
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2008.4.24 Y.Arai(KEK) @DTP Review 11 11
128x128 cells5x5 mm2 chip
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2008.4.24 Y.Arai(KEK) @DTP Review 12
Compound Operational Board InterfaceDeveloped by Hawaii groupFADC-FPGA-USB interface
COBI
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USB
FPGA
INTPIX
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Periodical readout and reset is necessaryEvaluation of the pixel structure.Response to pulsed laser and MIP particles was confirmed.
Cluster energy distributionWith 90Sr β source
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A prototype pixel sensor for the Belle SVD upgrade was submitted in Dec 2007.
Continuous sampling + comparator + digital pipeline.Implemented in 60x60 μm2 cell.More room to shrink the pixel size.
Trigger Latency
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p-n junctions
Analog
Flip-flops
Register Comparator
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Prototype 48x48 calls5x5 mm2 chip
4 8 x 4 8 pixels
60umx
60um
DOUT[1 5 :0]
RowAddressDecoder
BiasVrefs
RA[5:0]ENRD
Reset
Vths
XTrigAll
ClearTrigger
YTrig[1 1:0]
YTrigAll
XTrig[1 1:0]
CA[5:0]Column Address Decoder
CIO[4 :0]
Write
OR4
OR4
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Submission 2005/2006 2007Technology profile 0.15 μm 0.2 μmWafer Diameter 6 inches 8 inches
Core (I/O) Voltage 1.0V (1.8V) 1.8V (1.8/3.3V)
Gate Length 0.14 μm 0.2 μm
Gate Oxide Thickness 2.5/5 nm 4.5/7 nm
BOX Thickness 200 nm 200 nm
Ioff <100 pA/μm <0.1 pA/μm