the state-of-the-art and future trend of power...

© Fuji Electric Co., Ltd. All rights reserved. 1

The State-of-The-Art and Future Trend of Power Semiconductor Devices

7 Nov. 2015Dr. T. Fujihira（藤平（藤平（藤平（藤平龍彦）龍彦）龍彦）龍彦）

Fuji Electric Co., Ltd（富士電機）（富士電機）（富士電機）（富士電機）

CPSSC 2015, Shenzhen


� Introduction

� SiC and GaN

� RC-IGBT

� 7th Generation IGBT

� RB-IGBT

� Conclusions

Outline


Worl

d P

opula

tion (

Bill

ions)

Worl

d P

opula

tion (

Bill

ions)

Worl

d P

opula

tion (

Bill

ions)

Worl

d P

opula

tion (

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ions)

Worl

d G

DP

(B

illio

ns 2

005 U

SD

)W

orl

d G

DP

(B

illio

ns 2

005 U

SD

)W

orl

d G

DP

(B

illio

ns 2

005 U

SD

)W

orl

d G

DP

(B

illio

ns 2

005 U

SD

)YearYearYearYear YearYearYearYear

Source: World Population Prospects: The 2012 RevisionSource: World Population Prospects: The 2012 RevisionSource: World Population Prospects: The 2012 RevisionSource: World Population Prospects: The 2012 Revision

Population Division of the Department of EconomicPopulation Division of the Department of EconomicPopulation Division of the Department of EconomicPopulation Division of the Department of Economic

and Social Affairs of the United Nations Secretariatand Social Affairs of the United Nations Secretariatand Social Affairs of the United Nations Secretariatand Social Affairs of the United Nations Secretariat

Source: International Energy Outlook 2014, Reference case,Source: International Energy Outlook 2014, Reference case,Source: International Energy Outlook 2014, Reference case,Source: International Energy Outlook 2014, Reference case,

U.S. Energy Information AdministrationU.S. Energy Information AdministrationU.S. Energy Information AdministrationU.S. Energy Information Administration

Red line: IEO2014 history & projectionRed line: IEO2014 history & projectionRed line: IEO2014 history & projectionRed line: IEO2014 history & projection

Dashed line: linear fittingDashed line: linear fittingDashed line: linear fittingDashed line: linear fitting

What will come?

� Population grows 1.5 timesPopulation grows 1.5 timesPopulation grows 1.5 timesPopulation grows 1.5 times � GDP grows 6 timesGDP grows 6 timesGDP grows 6 timesGDP grows 6 times


Worl

d P

rim

ary

Energ

y C

onsum

ption

Worl

d P

rim

ary

Energ

y C

onsum

ption

Worl

d P

rim

ary

Energ

y C

onsum

ption

Worl

d P

rim

ary

Energ

y C

onsum

ption

(Quadri

llion B

tu)

(Quadri

llion B

tu)

(Quadri

llion B

tu)

(Quadri

llion B

tu)

YearYearYearYear

Red line: IEO2013 history & projectionRed line: IEO2013 history & projectionRed line: IEO2013 history & projectionRed line: IEO2013 history & projection

Dashed line: linear fittingDashed line: linear fittingDashed line: linear fittingDashed line: linear fitting

Source: International Energy Outlook 2013, Reference case,Source: International Energy Outlook 2013, Reference case,Source: International Energy Outlook 2013, Reference case,Source: International Energy Outlook 2013, Reference case,

U.S. Energy Information AdministrationU.S. Energy Information AdministrationU.S. Energy Information AdministrationU.S. Energy Information Administration

Source: IPCC 5Source: IPCC 5Source: IPCC 5Source: IPCC 5thththth Assessment ReportAssessment ReportAssessment ReportAssessment Report

Climate Change 2014 Synthesis Report, 2015Climate Change 2014 Synthesis Report, 2015Climate Change 2014 Synthesis Report, 2015Climate Change 2014 Synthesis Report, 2015

Figure SPM.6.Figure SPM.6.Figure SPM.6.Figure SPM.6.

Energy/Resources and Climate Change

� Energy consumption 3 timesEnergy consumption 3 timesEnergy consumption 3 timesEnergy consumption 3 times � Temperature +1 to +3 degreeTemperature +1 to +3 degreeTemperature +1 to +3 degreeTemperature +1 to +3 degree

� Sea level +0.4 to +0.8 mSea level +0.4 to +0.8 mSea level +0.4 to +0.8 mSea level +0.4 to +0.8 m


� Switch from fossil to renewable energiessolar, wind, storage, etc.

� Increase efficiency of power conversion,generation, transmission, distribution, etc.

� Reduce consumption, increase reuse and recycleof limited natural resourcesincluding Cu and Iron in PE systems

to establish a sustainable society

What we should do

as power electronic R&D or Industries


� Introduction

� SiC and GaN

� RC-IGBT


� RB-IGBT

� Conclusions


Latest Performance of SiC MOSFET


0.1

1

10

100

1000

100 1000 10000 100000

■Panasonic（GaN-HEMT）

◆Avogy（GaN-vertical-PNDi）

◇Avogy（GaN-vertical-FET）

○Hitachi-metal（GaN-vertical-PNDi）

●Sumitomo（GaN-vertical SBD）

▲Toyota Gosei(GaN-vertical-FET）

All data are from published papers.

No mass-produced product in the

market.

BV [V]

Ron

Ron

Ron

Ron-- -- A

[mΩ

A[m

ΩA[m

ΩA[m

Ω････cm2]

cm2]

cm2]

cm2]

Latest Performance of GaN Devices

© Fuji Electric Co., Ltd. All rights reserved.

Fuji Electric Co., Ltd.

690V stack inverterVVVF inverter

- Tokyo Metro Co., Ltd. -

TOSHIBA Co.

200/400V

general purpose inverter

VVVF inverter for next gen.

Shinkansen


Auxiliary power supply

- Tokyo Metro Co., Ltd. -

Mitsubishi Electric Co.

Applications of Hybrid-SiC Power Modules

9


Toyota Motor Co.

Test vehicle and power control units VVVF inverter

- Odakyu Electric Railway Co., Ltd. -

Mitsubishi Electric Co.


1MW PV inverter

Residential PV inverter

Fukushima SiC Applied Engineering Inc.

320kV high voltage pulse generator

Using SiC discrete MOSFET

Applications of All-SiC Power Modules

10


Yaskawa Electric. Co. applied GaN-HEMT to residential PV inverter

・high efficiency 96.5%⇒98.2%

・40% size down

Toshiba Lighting & Technology Co.

GaN-HEMT applied to power supply of LED

Applications of GaN HEMT


[Calc. condition]

fc=2 ~16kHz,Vcc=600V, Io=1/2rated, λ=1.0, fo=50Hz, cosΦ=0.9

-19%

-61%-48%-33%

Decreasing rate of All-SiC against Si

Loss Comparison IGBT/Hybrid-SiC/All-SiC

1200V Device


[Calc. condition]

fc=2 ~16kHz, Vcc=900V, Io=1/2rated, λ=1.0, fo=50Hz, cosΦ=0.9

-48%

-73%-68%

-59%



1700V Device


[Calc. condition]

fc=2 ~16kHz, Vcc=1800V, Io=1/2rated, λ=1.0, fo=50Hz, cosΦ=0.9

-73%

-84%-82%

-79%



3300V Device


Next-Gen. Converter-Inverter Using SiChttp://jr-central.co.jp/news/release/_pdf/000027199.pdf


690VAC Drive, Hybrid-SiC Module Installed

More Information Available on Fuji website http://www.fujielectric.com/products/ac_drives_lv/frenic-vg/products/features/

1700V/400A 2in11700V/400A 2in11700V/400A 2in11700V/400A 2in1


All-SiC Module ExampleSiC MOSFET Module installed to 1MW 3-phase PV inverter

98.8% Efficiency 20% smaller footprint, lighter weight, less mechanical materialsProduct Release Aug. 2014


All-SiC Example - 20kW 3-Phase PV Inverter

1/4 Inverter Size

1/8 Power Stack Size

1200V-100A All-SiC

Module Installed97.6

97.8

98.0

98.2

98.4

98.6

98.8

99.0

99.2

0 10 20 30 40 50

周波数 [kHz]

効率

[%]

SiSiSiSi----IGBT PV InverterIGBT PV InverterIGBT PV InverterIGBT PV Inverter

AllAllAllAll----SiCSiCSiCSiC PV InverterPV InverterPV InverterPV Inverter

fc (kHz)fc (kHz)fc (kHz)fc (kHz)

Eff

icie

ncy (

%)

Eff

icie

ncy (

%)

Eff

icie

ncy (

%)

Eff

icie

ncy (

%)

Power Conversion Efficiency

99% efficiency even at high carrier frequency1/8 power stack size and 1/2 device loss

1/2 Device Loss

Compared to Si IGBT


Silicon / Hybrid-SiC / All-SiC

C

E

G

Si-IGBT+Si-FWD(conventional)

Si-IGBT+SiC-SBD(started)

SiC-MOS+SiC-SBD(coming)

C

E

G G

D

S

IGBT Hybrid-SiC All-SiC

Loss 1 2/3 1/2Material 1 2/3 1/2

orfc 1 2 4LC 1 1/4 1/16


Hybrid-SiC Module Line-up Plan


� Introduction

� SiC and GaN

� RC-IGBT


� RB-IGBT

� Conclusions


New Reverse-Conducting IGBT (1200V) with Revolutionary Compact Package,K.Takahashi et.al, PCIM Europe 2014.

RC-IGBT - Device Structure


RC-IGBT - Eoff vs VON / Err vs VF


RC-IGBT – Application Impact


flange

inlet

outlet

Next Gen. high power module for EV/HEV

【【【【Features】】】】System ：：：：750V/800A 6in1Device ：：：：1G RC-IGBTAluminum direct cooling fin with jacketTj(op) ：：：：Operation Temp. 175℃℃℃℃ guaranteedDimension ：：：：162mm××××116mm××××24mm

【【【【Application example】】】】

Motor Output ：：：：80-150kWVDCmax ：：：：450VIACpeak ：：：：460ArmsCarrier freq. ：：：：6kHz

Application of RC-IGBT


Trend and Forecast of Power Densityof Automotive IGBT Module

Output Power density [kVA/L] = Max. continuous output power [kVA] / Module volume [L]

0

200

400

600

800

1995 2000 2005 2010 2015 2020

Outp

ut

Pow

er

density [

kVA

/L]

Industry

1st.GenCu indirectWater-cooling

2st.GenCu directWater-cooling

1st.GenAl directWater-cooling

2st.GenAl directWater-cooling

3st.GenAl directWater-coolingM651,M652

14 in 1 Module

14 in 1 2nd Gen.Module

M653

4th.Gen

6th.Gen

Automotive


� Introduction

� SiC and GaN

� RC-IGBT


� RB-IGBT

� Conclusions


Technical Overview of 1200V IGBT

N-drift

P+collector

Collector

Gate Emitter

PN+

4th Gen.(S-Series)Y1998

N-drift

P+collector

Collector

Gate

Emitter

PN+

N-field-stop

5th Gen.(U-Series)Y2002

N-drift

Collector

Gate

Emitter

P

N+

6th Gen.(V-series)Y2007

N+field-stop

P+collector

7th Gen.(X-series)

N-drift

Collector

Gate

Emitter

PN+

N+field-stop

P+collector

Collector

3rd Gen.(N-Series)Y1995

N+buffer

N-drift

P+substrate

Gate Emitter

PN+

Trench gate + Field-stopFine surface pattern Thinner drift layer


Improvement

Tj=150°C

Achievement of 7G IGBT 1200V

Reduced Vce(sat) Reduced Eoff and Vspike Reduced loss

Tj=150 deg. C


3rd Gen.(JA-Series)

Y1994

5th Gen.(U-Series)

Y2002

6th Gen.(V-series)

Y2007

Anode

Cathode

Anode

Cathode

Anode

Cathode

7th Gen.(X-series)

Anode

Cathode

Technical Overview of 1200V FWD

Optimized lifetime controlThinner drift layer

30


Tj=150°C

9% reductionat dv/dt=10kV/us.

Achievement of 7G FWD 1200V

Reduced Vf Soft recovery Reduced Eon+Err

Reverse recovery dv/dt: Tj=R.T., VCC=600V, IC=10A (1/10x Inom), VGE=+15/-15V.Switching conditions: Tj=150°C, VCC=600V, IC=100A (1x Inom), VGE=+15V/-15V.


Cross-section of solder(under chips) after dTjpower cycling test(at the same cycles).

Cracks

New solder

Conventional solder Lessdeterioration

Achievement of 7G IGBT Package

175 degree C operation is assured


Inverter drive conditions: VDC=600V, IO=35Arms, fO=50Hz,fC=4, 8kHz, cosφ=+0.9, modulation rate=1.0, Rg=reverse

recovery dv/dt 10kV/us, Ta=40°C, Rth(f-a)/leg=0.60°C/W,Loss characteristics are at Tj=150°C

Impact of 7G IGBT ModuleReduced loss and reduced Tj or increased output

with smaller package

33


7G IGBT Module X-Series Line-up Plan


� Introduction

� SiC and GaN

� RC-IGBT


� RB-IGBT

� Conclusions


RB-IGBT Installed T-3level IGBT Module

12in1 IGBT Module

(1200V/100A)

4in1 IGBT Module

(1200V/300A)

12in1 IGBT Module

(1200V/100A)

4in1 IGBT Module

(1200V/300A)

T1T1T1T1

T2T2T2T2T4T4T4T4

T3T3T3T3

PPPP

UUUU

NNNN

CCCC

MMMM

T1Gu

T2Gu

T3Ew

P

M

N

U

V

W

T1Gv T1Gw

T2Gv T2Gw

T1/T4Eu T1/T4Ev T1/T4Ew

T2Eu T2Ev T2Ew

T3Eu

T3Ev

T3Gu

T3Gv

T3Gw

T4Gu

T4Gv

T4Gw

TH1 TH2

AT-NPC : Advanced T-type NPC (Neutral-Point-Clamed)

Already available in market


500kVA 3phase-UPS Using RB-IGBT

Conventional

2-level

T-Type

With RB-IGBT installed

FUJI UPS 7000HX-T3500kVA

η=97.1%η=95.1%

S. Takizawa et al., Proceedings of PCIM Europe 2012 pp. 296-302

Peak efficiency improved by 2 pointVolume and weight cut down to 2/3 of 2-level


� Introduction

� SiC and GaN

� RC-IGBT


� RB-IGBT

� Conclusions


Comparison of SiC and Si-IGBTPower Density

Loss or fc Material Chip Inverter

IGBT+FWD 1 1 1 1 1

Next gen. 0.9 1.2 0.9-0.7 1.5 1.1-1.5

RB-IGBT 0.9 1.2 0.9-0.7 1.5 1.1-1.5

AT-NPC 2/3 2 2/3 3/4* 1.5

RC-IGBT 1 1.5 0.9-0.8 1.3 1.3

Hybrid-SiC 2/3 2 2/3 1.5 1.5

All-SiC 1/2 4 1/2 2 2

*because of the increased number of switches


Power Density: Power Rating (Voltage x Current) / Total Chip AreaLoss: Estimated Total Power Dissipation in 400VAC General Purpose Inverter

Trend and Forecast of Power Density and Lossof Power Device Chips

1200V chip or chip set


1G

2010

600V,1200V,1700V

2030

2G

1G

1G 2G 3G

All-SiC ModuleAll-SiC Module

RB-IGBT ModuleRB-IGBT Module

RC-IGBT ModuleRC-IGBT Module

Hy-SiC ModuleHy-SiC Module

SJ-MOSFETSJ-MOSFET

6G

4G

2G 3G 4G 5G

IGBT ModuleIGBT Module

Trench MOSFET(LV)Trench MOSFET(LV)

Year of Products

1G 2GSiC MOSFETSiC MOSFET 3G

SiC SBDSiC SBD 1G 2G 3G

2020

2G

1G 2G

7G

3G

1G 2G

2015 2025

3G

3G

3G

8G

Power Semiconductor Device Technology


Power Module Packaging Technologies

7G-IGBTSiC-Hybrid

Si IGBT trend(50A-1200V)

SiC device

Junction max temperature 125oC 150oC 175oC 200oC

1990 1995 2000 2010 20152005 2020

L seriesN series

S series

U series

V series

Die

foot

prin

t siz

e (a

.u.)

［L

serie

s=10

0］

100

10

80

60

40

20

Si Limit

New packagefor SiC device

175oC – Improve tech today, 200oC – Evolutional new package1990 1995 2000 2010 20152005 2020


Thank you!


7G IGBT Lineup Plan (650V)

44


Expanding Product Range of AT-NPC IGBT


1MW 3-phase PV Inverter Using RB-IGBTPeak efficiency measured is as high as 98.5%

K.Fujii et.al.,"1-MW Solar Power Inverters using new Three-level IGBT Modules connected in parallel," in Proc. PCIM Asia 2012, pp.81-86


SiC Updates – 16kV IGBT

Low Vf and highly reliable 16 kV ultrahigh voltage SiC flip-type n-channel implantation and epitaxial IGBT, Yonezawa, Y.et al, IEDM2013Dynamic Characteristics of Large Current Capacity Module using 16-kV Ultrahigh Voltage SiC Flip-Type n-channel IE-IGBT , Mizushima T, ISPSD2014


� 7G-IGBTs and RC-IGBTsas “The Next Generation Silicon Power Devices”

� RB-IGBT and AT-NPC for η=98.5%+

� SiC-SBD/Si-IGBT for η=98.8%+reducing cost & size of LC and mechanicalor 1.5XIout

� SiC-MOSFET/SBD for η=99.0%+and reducing cost & size of LC and mechanicalor 2XIout

the state-of-the-art and future trend of power...

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